Electronics Fundamentals PDF

electronics fundamentals
circuits, devices, and applications
THOMAS L. FLOYD
DAVID M. BUCHLA
Lesson 2: Transistors and Applications
Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Floyd/Buchla
River, NJ 07458. All Rights Reserved.
Lesson 2
Introduction
A transistor is a semiconductor device that controls current between
two terminals based on the current or voltage at a third terminal.
It is used for amplification or switching of electrical signals.
The basic structure of the bipolar junction transistor, BJT, determines
its operating characteristics.
DC bias is important to the operation of transistors in terms of setting
up proper currents and voltages in a transistor circuit.
Two important parameters are αDC and βDC

Floyd/Buchla
Lesson 2
Bipolar junction transistors (BJTs)
The BJT is a transistor with three regions and two pn

junctions. The regions are named the emitter, the base, and
the collector and each is connected to a lead.
There are two types of Separating the regions
BJTs – npn and pnp. C (Collector) are two junctions. C
Base-Collector
n junction p
B (Base) p B n
n Base-Emitter p
junction
E (Emitter) E

Floyd/Buchla
Lesson 2
Bipolar junction transistors (BJTs)
FIGURE 17–2 Transistor symbols.

Floyd/Buchla
Lesson 2
BJT biasing
For normal operation, the base-emitter junction is forward-

biased and the base collector junction is reverse-biased.
For the pnp

npn transistor, this BC reverse-
biased
condition requires that the base
+
is more negative
positive than
thanthe
theemitter
and the and
emitter collector
the collector
is more is more + pnp
npn +
positive than
negative thanthe
thebase.
base. + BE forward-
biased

Floyd/Buchla
Lesson 2
BJT currents
IE  IC  IB
FIGURE 17–4 Transistor currents.

Floyd/Buchla
Lesson 2
BJT currents
A small base current (IB) is able to control a larger collector

current (IC). Some important current relationships for a BJT
are:
IE  IC  IB IC
I
I C  αDC I E IB
I
Where αDC (dc alpha) = IC/ IE IE
I C  βDC I B
I
Where βDC (dc beta) = IC/ IB

Floyd/Buchla
Lesson 2
Voltage-divider bias
Because the base current is small, the approximation
 R2  is useful for calculating the base voltage.
VB    VCC
 R1  R2 
After calculating VB, you can find
VE by subtracting 0.7 V for VBE.
VE = VB - VBE R1 RC
Next, calculate IE by applying Ohm’s VC
VB
law to RE: V VE
IE  E
RE R2 RE
Then apply the approximation I C  I E
Finally, you can find the collector voltage
from VC  VCC  I C RC VCE  VC  VE
Floyd/Buchla
Lesson 2
Calculate VB, VE, and VC for the circuit.

 R2   6.8 k 
VB   
 CC 
V 15 V = 3.02 V
 R1  R2   27 k + 6.8 k 
+15 V
VE = VB  0.7 V = 2.32 V R1 RC
27 k 2.2 k
V 2.32 V
IE  E   2.32 mA 2N3904
RE 1.0 k
R2 RE
I C  I E  2.32 mA 6.8 k 1.0 k
VC  VCC  I C RC  15 V   2.32 mA  2.2 k   9.90 V

Floyd/Buchla
Lesson 2
Determine VB, VE, VC, VCE, IB, IE, and IC in the given
Figure, The 2N3904 is a general-purpose transistor with a
typical βDC = 200.

Floyd/Buchla
Lesson 2
Collector characteristic curves

The collector characteristic curves are a family of
curves that show how collector current varies with
the collector-emitter IC
voltage for a given IB. IB6
The curves are divided into
IB5
three regions:
The breakdown
active
saturation region region
is after
region IB4
the
is after
saturation
occurs the active
when region.
the region
base- IB3
This
and isisisthe
emitter characterized
and region for by
the base- IB2
operation
rapid increase
collector of class-A
in collector
junctions are
IB1
operation.
current.
both forwardOperation in this
biased.
region may destroy the IB = 0
VCE
transistor. 0

Floyd/Buchla
Lesson 2

Floyd/Buchla
Lesson 2

Draw the family of collector characteristics curves for the
circuit in the given figure for IB = 5 µA to 25 µA in 5 µA
increments. Assume βDC = 100

Floyd/Buchla
Lesson 2

Draw the family of collector characteristics curves for the
circuit in the given figure for IB = 5 µA to 25 µA in 5 µA
increments. Assume βDC = 100
IB IC
I C   DC I B
5 µA 0.5 mA I C  100  5A  0.5mA
10 µA 1.0 mA
15 µA 1.5 mA
20 µA 2.0 mA
25 µA 2.5 mA

Floyd/Buchla
Lesson 2
Load lines
A load line is an IV curve that represents the response of
a circuit that is external to a specified load.
For example, the load line for the
Thevenin circuit can be found by I (mA)
calculating the two end points: the
current with a shorted load, and the
6
output voltage with no load.
Load line
2.0 k 4
+12 V 2
INL
SL =
= 6.0
0 mA mA
VNL
SL =
= 012VV
0 V (V)
0 4 8 12

Floyd/Buchla
Lesson 2
Load lines
The IV response for any load will intersect the load line
and enables you to read the load current and load
voltage directly from the graph.
I (mA)
Read the load current
and load voltage from the graph if IV curve for
a 3.0 k resistor is the load. 6 3.0 k resistor
2.0 k 4
RL = 2 Q-point
+12 V
3.0 k
0 V (V)
0 4 8 12
VL = 7.2 V IL = 2.4 mA
Floyd/Buchla
Lesson 2
Load lines
The load line concept can be extended to a transistor
circuit. For example, if the transistor is connected as a
load, the transistor characteristic
I (mA)
curve and the base current
establish the Q-point.
6
2.0 k
4
+12 V
2
0 V (V)
0 4 8 12

Floyd/Buchla
Lesson 2
Load lines
Load lines can illustrate the operating conditions for a
transistor circuit. Assume the IV curves are as shown:
If you add a transistor load to the last
circuit, the base current will establish I (mA)
For this base current,
the Q-point. Assume the base current the Q-point is:
is represented by the blue line. 6
2.0 k
4
+12 V 2
0 V (V)
0 4 8 12
The load voltage (VCE) and current
(IC) can be read from the graph.
Floyd/Buchla
Lesson 2
Load lines
For the transistor, assume the base current is
established at 10 A by the bias circuit. Show the Q-
point and read the value of VCE and IC. The Q-point is the
IC (mA) intersection of the
2.0 k load line with the
10 A base current.
IB = 25 A
+12 V 6
IB = 20 A
4 IB = 15 A
IB = 10 A
2
IB = 5.0 A
Bias circuit 0 VCE (V)
0 4 8 12
VCE = 7.0 V; IC = 2.4 mA
Floyd/Buchla
Lesson 2
Signal (ac) operation

When a signal is applied to a transistor circuit, the output can have a
larger amplitude because the small base current controls a larger collector
current.
This increase is called amplification
The ratio of the ac collector current (Ic) to the ac base current (Ib) is
designated by βac (the ac beta) of hfe
Ic
 ac 
Ib
FIGURE 17–13 An amplifier with voltage-divider bias with capacitively

coupled input signal. Vin and Vout are with respect to ground.

Floyd/Buchla
Lesson 2
Signal (ac) operation

When a signal is applied to a transistor circuit, the
output can have a larger amplitude because the small
base current controls a larger collector current.
IC (mA)
For the load line and
characteristic curves from the last IB = 25 A
6
example (Q-point shown) assume IB IB = 20 A
varies between 5.0 A and 15 A IB = 15 A
4
due to the input signal. What is the
IB = 10 A
change in the collector current? 2
IB = 5.0 A
The operation along 0 VCE (V)
the load line is shown in red. 0 4 8 12
Reading the collector current, IC varies from 1.2 mA to 3.8 mA.
Floyd/Buchla
Lesson 2
CE amplifier
In a common-emitter amplifier, the input signal is applied
to the base and the output is taken from the collector. The
signal is larger but inverted at the output.
VC
Output coupling
C
RC capacitor
R1 C2
C1
R2 C3 Bypass
Input coupling RE
capacitor capacitor

Floyd/Buchla
Lesson 2
Summary
CE amplifier
The bypass capacitor increases voltage gain. It shorts the signal around
the emitter resistor, RE, in order to increase the voltage gain. To
understand why let us consider the amplifier without the bypass
capacitor as explained the preceding equations.
VC
Output coupling
C
RC capacitor
R1 C2
C1
R2 C3 Bypass
Input coupling RE
capacitor capacitor

Floyd/Buchla
Lesson 2
Formulas
Lowercase italic subscript indicate signal (ac) voltages and signal
(alternating currents)
Av (Voltage gain) = Vout / Vin
Vout = IcRC
The signal voltage at the base is approximately equal to

Vb ≡ Vin ≡ Ie (re + RE)
where re is the internal emitter resistance of the transistor.

Floyd/Buchla
Lesson 2
Formulas without the bypass capacitor
Av now can be expressed as

Av = Vout / Vin = IcRC / Ie (re + RE)
Since Ic ≡ Ie, the currents cancel and the gain is the ratio of the resistance.
Av = RC / (re + RE)
If RE is much greater than re, then

Av ≡ RC / RE

Floyd/Buchla
Lesson 2
Formulas with the bypass capacitor

If the bypass capacitor is connected across RE, it effectively shorts the
signal to ground leaving only re in the emitter. Thus the voltage gain of
the CE amplifier with the bypass capacitor shorting RE is:
Av = RC / re
The transistor parameter re is important because it determines the
voltage gain of a CE amplifier in conjunction with RC. A formula for
estimating re is given without derivation in the following equation:
re≡ 25mV / IE

Floyd/Buchla
Lesson 2
Summary
Voltage gain of a CE amplifier
Calculate the voltage gain of the CE amplifier. The dc

conditions were calculated earlier; IE was found to be 2.32 mA.
VCC = +15 V
25 mV 25 mV
re    10.8 
IE 2.32 mA R1 RC C2
2.2 k
V R C1 27 k
Av  out  C 2N3904
Vin re 1.0 F
2.2 F
2.2 k R2
  204 RE C3
10.8  6.8 k 1.0 k 100 F
Sometimes the gain will be shown with a
negative sign to indicate phase inversion.
Floyd/Buchla
Lesson 2
Phase Inversion
The output voltage at the collector is 180 degrees out of phase with
the input voltage at the base. Therefore, the CE amplifier is
characterized by a phase inversion between the input and output. The
inversion is sometimes indicated by a negative voltage gain.
AC Input Resistance Rin ≡ βac Ib re / Ib
The Ib terms cancel, leaving
Rin ≡ βac re
Rin = Vb / Ib
Total Input Resistance of a CE amplifier:
Vb = Iere Rin(tot) = R1║R2║Rin
Rin(tot) = R1║R2║βac re
Ie ≡ βac Ib RC has no effect because of the reverse-biased,
base-collector junction.

Floyd/Buchla
Lesson 2
Current Gain:
The signal current gain of a CE amplifier is
Ai= Ic / Is
Where Is is the source current and is calculated by Vin /
Rin(tot)
Power Gain:
The power gain of a CE amplifier is the product of the voltage gain

and the current gain.
Ap≡ Av Ai

Floyd/Buchla
Lesson 2
Decibel (dB) Measurement
The decibel (dB) is a logarithmic measurement of the ratio of one

voltage to another or one power to another, which can be used to
express the input-to-output relationship .
VOLTAGE RATIO: dB = 20 log (Vout / Vin)
POWER RATIO: dB = 10 log (Pout / Pin)

Floyd/Buchla
Lesson 2
Input resistance of a CE amplifier
The input resistance of a CE amplifier is an ac resistance

that includes the bias resistors and the resistance of the
emitter circuit as seen by the base.
Because IB << IE, the emitter VCC = +15 V
resistance appears to be
R1 RC C2
much larger when viewed 2.2 k
from the base circuit. The C1 27 k
2N3904
factor is (ac+1), which is 1.0 F
approximately equal to ac. 2.2 F
R2 RE C3
Using this approximation, 6.8 k 1.0 k 100 F
Rin(tot) = R1||R2||acre.

Floyd/Buchla
Lesson 2
FIGURE 17–20 Total input resistance.

Floyd/Buchla
Lesson 2
Calculate the input resistance of the CE amplifier. The

transistor is a 2N3904 with an average ac of 200. The value of re
was found previously to be 10.8 . Thus, acre = 2.16 k.
VCC = +15 V
R1 RC C2
Rin(tot) = R1||R2||acre 2.2 k
C1 27 k
= 27 k||6.8 k||2.16 k 2N3904
1.0 F
= 1.55 k 2.2 F
R2 RE C3
Notice that the input resistance of 6.8 k 1.0 k 100 F
this configuration is dependent on
the value of ac, which can vary.

Floyd/Buchla
Lesson 2
CE amplifier
Determine the voltage gain, current gain, and power

gain for the CE amplifier given. DC  ac = 100. Also, express the
voltage and power gains in decibels.

Floyd/Buchla
Lesson 2
CC amplifier (emitter-follower)
In a common-collector amplifier, the input signal is
applied to the base and the output is taken from the
emitter. There is no voltage gain, but there is power gain.
The output voltage is nearly VC
the same as the input; there is C
no phase reversal as in the R1
CE amplifier. C1
The input resistance is larger

R2
than in the equivalent CE RE
amplifier because the emitter
resistor is not bypassed.

Floyd/Buchla
Lesson 2
The voltage gain of a CC amplifier is approximately 1, but

the current gain is always greater than 1.
Voltage Gain Av = IeRE / Ie (re + RE)
Av (Voltage Gain) The gain expression simplifies to:

Av = Vout / Vin
Av = RE / (re + RE)
Vout = IeRE It is important to notice here that the
gain is always less than 1. Because re is
Vin= Ie (re + RE) normally much less than the RE, then a
good approximation is Av = 1

Floyd/Buchla
Lesson 2
AC Input Resistance
The emitter-follower is characterized by a high input resistance, which

makes it a very useful circuit. Because of the very high input
resistance , the emitter follower can be used as a buffer to minimize
loading effects when one circuit is driving another.
Rin = Vb / Ib The Ib terms cancel, leaving
Rin ≡ βac (re + RE)
Vb = Ie (re + RE)
If RE is at least ten times larger than re , then the
input resistance at the base is:
Ie ≡ βac Ib
Rin ≡ βac RE
Rin ≡ βac Ib (re + RE) / Ib
Total Input Resistance of a CC amplifier:
Rin(tot) = R1║R2║Rin
Floyd/Buchla
Lesson 2
Current Gain:
The signal current gain for the emitter-follower is
Ai= Ie / Is
Where Is is the signal current and is calculated by Vin / Rin(tot)
Since Ie = Vout / RE and Is = Vin / Rin(tot) then Ai can also be expressed as
assuming Vout / Vin = 1:
Ai= (Vout / RE )/ (Vin / Rin(tot) ) = Rin(tot) / RE

Power Gain:
The power gain of is the product of the voltage gain and the current gain. For
the emitter-follower, the power gain is approximately equal to the current gain
because the voltage gain is approximately equal to 1.
Ap≡ Ai
Floyd/Buchla
Lesson 2
CC amplifier
Calculate re and Rin(tot) for the CC amplifier. Use  = 200.
 R2   27 k 
VB   
 CC 
V 15 V = 8.26 V
 1
R  R2   22 k + 27 k 
VE  VB  0.7 V = 7.76 V V = +15 V CC
VE 7.76 V
IE    7.76 mA
RE 1.0 k R1
25 mV 25 mV C1 22 k
re    3.2 
IE 7.76 mA 2N3904
Rin(tot) = R1||R2||ac(re+ RE) 10 F R2

27 k RE
= 22 k||27 k|| 200 (1.0 k) = 9.15 k 1.0 k
Because re is small compared to RE, it
has almost no affect on Rin(tot).
Floyd/Buchla
Lesson 2
CC amplifier
Determine the input resistance of the emitter-follower in the given
figure. Also find the voltage gain, current gain and power gain.

Floyd/Buchla
Lesson 2
The BJT as a switch

BJTs are used in switching applications when it is
necessary to provide current drive to a load.
In switching applications, the transistor VCC VCC
is either in cutoff or in saturation.
RC RC
In cutoff, the input voltage is too
small to forward-bias the VOUT
transistor. The output (collector) IIN = 0 0 CC
=V V
voltage will be equal to VCC.
IIN > IC(sat)/DC
When IIN is sufficient to saturate
the transistor, the transistor acts
like a closed switch. The output is
near 0 V.

Floyd/Buchla
Lesson 2
The BJT as a switch
FIGURE 17–30 Ideal switching action of a transistor.

Floyd/Buchla
Lesson 2
The BJT as a switch FIGURE 17–30 Ideal switching action of a

transistor.
Conditions in Cutoff A transistor is in cutoff when the base-emitter junction is not forward biased.
VCE( cutoff )  VCC
Conditions in Saturation When the base-emitter junction is forward-biased and there is enough base
current to produce a maximum collector current, the transistor is saturated. VCC
The minimum value of base current to produce saturation is:
I C ( sat) 
RC
I C ( sat) VRB
I B (min)  VBE )  0.7V VRB  VIN  0.7V RB (max) 
 DC I B (min)
Floyd/Buchla
Lesson 2
The BJT as a switch

(a) For the transistor switching circuit in the given figure, what is
VCE when VIN = 0 V?
(b) What minimum value of IB will saturate this transistor if the
βDC is 200?
(c) Calculate the maximum value of RB when VIN = 5 V.

Floyd/Buchla
Lesson 2
The FET
The field-effect transistor (FET) is a voltage controlled
device where gate voltage controls drain current. There
are two types of FETs – the JFET and the MOSFET.
JFETs have a conductive channel D (Drain) D
with a source and drain connection
on the ends. Channel current is
n p
controlled by the gate voltage.
G (Gate) p p G n n
The gate is always operated with
reverse bias on the pn junction formed
between the gate and the channel. As
S (Source) S
the reverse bias is increased, the
n-channel JFET p-channel JFET
channel current decreases.

Floyd/Buchla
Lesson 2
FIGURE 17–33 Effects of VGG on channel width and drain current
The FET (VGG = VGS).

Floyd/Buchla
Lesson 2
The FET FIGURE 17–34 JFET schematic symbols.

Floyd/Buchla
Lesson 2
The FET: MOSFET

The MOSFET (Metal Oxide Semiconductor FET)
differs from the JFET in that it has an insulated gate
instead of a pn junction between the gate and channel.
Like JFETs, MOSFETs have a conductive channel with the
source and drain connections on it. D (Drain) D
Channel current is
controlled by the gate n p
voltage. The required gate G (Gate) p G n
voltage depends on the type
Substrate
of MOSFET. Channel
S (Source) S
n-channel p-channel
MOSFET MOSFET
Floyd/Buchla
Lesson 2
The FET: MOSFET
FIGURE 17–35 Representation of the basic structure of D-MOSFETs.

Floyd/Buchla
Lesson 2
The FET: MOSFET

In addition to the channel designation, MOSFETs are subdivided
into two types – depletion mode (D-mode) or enhancement mode
(E-mode).
The D-MOSFET has a
physical channel which
can be enhanced or
depleted with bias. For this
reason, the D-MOSFET
can be operated with either
negative bias (D-mode) or
positive bias (E-mode).
FIGURE 17–36 Operation of n-channel D-MOSFET.

Floyd/Buchla
Lesson 2
The FET: MOSFET
FIGURE 17–37 D-MOSFET schematic symbols.

Floyd/Buchla
Lesson 2
The FET: MOSFET

The E-mode MOSFET has no physical channel. It can only be operated
with positive bias (E-mode). Positive bias induces a channel and enables
conduction as shown here with a p-channel device.
D D
n n
G G p
p
n n
S S
induced channel
E-MOSFET E-MOSFET with bias
FIGURE 17–38 E-MOSFET construction and
operation.

Floyd/Buchla
Lesson 2
The FET: MOSFET
FIGURE 17–39 E-MOSFET schematic symbols.

Floyd/Buchla
Lesson 2
JFET biasing
JFETs are depletion mode devices – they must be
operated such that the gate-source junction is reverse
biased. +VDD VDD
The simplest way to bias a JFET is
to use a small resistor is in series RD RD
with the source and a high value
resistor from the gate to ground. VG = 0 V VG = 0 V
The voltage drop across the source +VS V S
resistor essentially reverse biases RG RS RG RS
the gate-source junction.
Because of the reverse-biased n-channel p-channel
junction, there is almost no
current in RG. Thus, VG = 0 V.
Floyd/Buchla
Lesson 2
JFET biasing
For the n-channel JFET, the gate-to-

source voltage is VGS  VG  VS  0V  I D RS
VGS   I D RS
For the p-channel JFET, the gate-to-

source voltage is VGS   I D RS
The drain voltage with respect to ground

is V  V  I R
D DD D D
Since VS=IDRS, the drain-to-source FIGURE 17–40 Self-biased JFETs (IS = ID in

all FETs).
voltage is V  V  I R  R 
DS DD D D S

Floyd/Buchla
Lesson 2
JFET biasing
Find VDS and VGS in the JFET circuit below, given that ID =
5mA

Floyd/Buchla
Lesson 2
D-MOSFET biasing
D-MOSFETs can be operated in either depletion mode
or in enhancement-mode. For this reason, they can be
biased with various bias circuits. +VDD
The simplest bias method for a D- RD

MOSFET is called zero bias. In this
method, the source is connected directly
VG = 0 V
to ground and the gate is connected to
ground through a high value resistor.
RG
Only n-channel D-MOSFETs
are available, so this is the
only type shown. n-channel D-MOSFET
with zero bias

Floyd/Buchla
Lesson 2
D-MOSFET biasing FIGURE 17–42 A zero-biased D-MOSFET.
Recall that depletion/enhancement

MOSFETs can be operated with either
positive or negative values of VGS.
A simple bias method, called zero bias, is
to set VGS = 0 V so that an ac signal at the
gate varies the gate-to-source voltage
above and below this bias point.
Since VGS = 0 V, ID = IDSS as indicated.
IDSS is defined as the drain current when
VGS = 0 V.
The drain-to-source voltage is expressed
as V  V  I R
DS DD DSS D

Floyd/Buchla
Lesson 2
D-MOSFET biasing
Determine the drain-to-source voltage in the circuit of the
given figure. The MOSFET data sheet give VGS(off) = -8 V and
IDSS = 12 mA

Floyd/Buchla
Lesson 2
E-MOSFET biasing
E-MOSFETs can use bias circuits similar to BJTs but
larger value resistors are normally selected because of
the very high input resistance. +VDD +V DD
The bias voltage is normally RD

set to make the gate more RD
R1
positive than the source by an RG
amount exceeding VGS(th).
R2
Drain-feedback bias Voltage-divider bias

Floyd/Buchla
Lesson 2
E-MOSFET biasing
FIGURE 17–44 E-MOSFET biasing arrangements.
Recall that enhancement-only MOSFETs

must have a VGS greater than the
threshold value VGS(th) .
In either bias arrangement, the purpose is
to make the gate voltage more positive
than the source by an amount exceeding
VGS(th) .
In the drain-feedback circuit, there is
negligible gate current and, therefore, no
voltage drop across RG . As a result,
VGS = VDS.
Equation for the voltage-divider bias is  R2 
VGS   VDD VDS  VDD  I D RD
given by  1
R  R2 

Floyd/Buchla
Lesson 2
E-MOSFET biasing
Determine the amount of drain current in the given figure. The
MOSFET has a VGS(th) of 3 V.

Floyd/Buchla
Lesson 2
Selected Key Terms
Bipolar A transistor with three doped semiconductor
junction regions separated by two pn junctions.
transistor
(BJT) An amplifier that conducts for the entire input
cycle and produces an output signal that is a
Class A replica of the input signal in terms of its
amplifier waveshape.
The state of a transistor in which the output

current is maximum and further increases of
Saturation the input variable have no effect on the output.

Floyd/Buchla
Lesson 2
Selected Key Terms
Cutoff The non-conducting state of a transistor.
Q-point The dc operating (bias) point of an amplifier.
Amplification The process of producing a larger voltage,

current or power using a smaller input signal
as a pattern.
Common- A BJT amplifier configuration in which the

emitter (CE) emitter is the common terminal.
Class B An amplifier that conducts for half the input

amplifier cycle.
Floyd/Buchla
Lesson 2
Selected Key Terms
Junction field- A type of FET that operates with a reverse-
effect transistor biased junction to control current in a channel.
(JFET)
MOSFET Metal-oxide semiconductor field-effect
transistor.
Depletion mode The condition in a FET when the channel is

depleted of majority carriers.
Enhancement The condition in a FET when the channel has

mode an abundance of majority carriers.

Floyd/Buchla
Lesson 2
Quiz
1. The Thevenin circuit shown has a load line that crosses

the y-axis at
a. +10 V. 5.0 k
b. +5 V.
+10 V
c. 2 mA.
d. the origin.

Floyd/Buchla
Lesson 2
Quiz
1. The Thevenin circuit shown has a load line that crosses

the y-axis at
a. +10 V. 5.0 k
b. +5 V.
+10 V
c. 2 mA.
d. the origin.

Floyd/Buchla
Lesson 2
Quiz
2. In a common-emitter amplifier, the output ac signal will

normally
a. have greater voltage than the input.
b. have greater power than the input.
c. be inverted.
d. all of the above.

Floyd/Buchla
Lesson 2
Quiz
2. In a common-emitter amplifier, the output ac signal will

normally
c. be inverted.

Floyd/Buchla
Lesson 2
Quiz
3. In a common-collector amplifier, the output ac signal

will normally
c. be inverted.
d. have all of the above.

Floyd/Buchla
Lesson 2
Quiz
3. In a common-collector amplifier, the output ac signal

will normally
c. be inverted.
d. have all of the above.

Floyd/Buchla
Lesson 2
Quiz
4. The type of amplifier shown is a

a. common-collector.
b. common-emitter. VC
C
c. common-drain.
R1
C1
d. none of the above.
R2
RE

Floyd/Buchla
Lesson 2
Quiz
4. The type of amplifier shown is a

a. common-collector.
b. common-emitter. VC
C
c. common-drain.
R1
C1
R2
RE

Floyd/Buchla
Lesson 2
Quiz
5. A major advantage of FET amplifiers over BJT amplifiers

is that generally they have
a. higher gain.
b. greater linearity.
c. higher input resistance.

Floyd/Buchla
Lesson 2
Quiz
5. A major advantage of FET amplifiers over BJT amplifiers

is that generally they have
a. higher gain.
b. greater linearity.
c. higher input resistance.

Floyd/Buchla
Lesson 2
Quiz
6. A type of field effect transistor that can operate in either

depletion or enhancement mode is an
a. D-MOSFET.
b. E-MOSFET.
c. JFET.

Floyd/Buchla
Lesson 2
Quiz
6. A type of field effect transistor that can operate in either

depletion or enhancement mode is an
a. D-MOSFET.
b. E-MOSFET.
c. JFET.

Floyd/Buchla
Lesson 2
Quiz
8. A transistor circuit shown is a

a. D-MOSFET with voltage-divider bias.
+VDD
b. E-MOSFET with voltage-divider bias.
c. D-MOSFETwith self-bias.
RD
d. E-MOSFET with self bias. R1
R2

Floyd/Buchla
Lesson 2
Quiz
8. A transistor circuit shown is a

a. D-MOSFET with voltage-divider bias.
+VDD
b. E-MOSFET with voltage-divider bias.
c. D-MOSFETwith self-bias.
RD
d. E-MOSFET with self bias. R1
R2

Floyd/Buchla
Lesson 2
Quiz
10. If you were troubleshooting the circuit shown here,

you would expect the gate voltage to be
a. more positive than the drain voltage. +VDD
b. more positive than the source voltage.

c. equal to zero volts. RD
R1
d. equal to +VDD
R2

Floyd/Buchla
Lesson 2
Quiz
10. If you were troubleshooting the circuit shown here,

you would expect the gate voltage to be
a. more positive than the drain voltage. +VDD
b. more positive than the source voltage.

c. equal to zero volts. RD
R1
d. equal to +VDD
R2

Floyd/Buchla

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electronics fundamentals

circuits, devices, and applications

Lesson 2: Transistors and Applications

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Bipolar junction transistors (BJTs)

The BJT is a transistor with three regions and two pn

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Bipolar junction transistors (BJTs)

FIGURE 17–2 Transistor symbols.

For normal operation, the base-emitter junction is forward-

For the pnp

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

FIGURE 17–4 Transistor currents.

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

A small base current (IB) is able to control a larger collector

Where βDC (dc beta) = IC/ IB

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Calculate VB, VE, and VC for the circuit.

VC  VCC  I C RC  15 V   2.32 mA  2.2 k   9.90 V

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Collector characteristic curves

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Collector characteristic curves

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Collector characteristic curves

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Collector characteristic curves

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Signal (ac) operation

FIGURE 17–13 An amplifier with voltage-divider bias with capacitively

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Signal (ac) operation

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Av (Voltage gain) = Vout / Vin

The signal voltage at the base is approximately equal to

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Formulas without the bypass capacitor

Av now can be expressed as

If RE is much greater than re, then

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Formulas with the bypass capacitor

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Calculate the voltage gain of the CE amplifier. The dc

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

The power gain of a CE amplifier is the product of the voltage gain

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

The decibel (dB) is a logarithmic measurement of the ratio of one

VOLTAGE RATIO: dB = 20 log (Vout / Vin)

POWER RATIO: dB = 10 log (Pout / Pin)

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Input resistance of a CE amplifier

The input resistance of a CE amplifier is an ac resistance

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Input resistance of a CE amplifier

FIGURE 17–20 Total input resistance.

Electronics Fundamentals 8th edition © 2010 Pearson Education, Upper Saddle

Input resistance of a CE amplifier

Calculate the input resistance of the CE amplifier. The