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IES Paper-II [Set-B] |EE|

1. The important fact about the collector current is  VD 


ID  IS e VT  1
(A) It is greater than emitter current  
(B) It equal the base current divided by the
Where ID = Diode Current
current gain
IS = Reverse Saturation Current
(C) It is small
VD = Potential applied across the
(D) It approximately equals the emitter
junction
current
KT
Key: (D) VT = thermal voltage
2
Exp: The emitter current of the BJT is given by η = Ideality factor
I E  IC  I B
For a BJT with a large β value, the 3. The thermal voltage VT of a semiconductor
recombination of carriers at the base will be diode at 27°C temperature is nearly
negligibly small. Hence, the base current will (A) 17mV
be IB  IC (B) 20mV
So IE IC (C) 23mV
The collector current is approximately equal (D) 26mV
to the emitter current. Key: (D)
Exp: Thermal voltage,
2. What is Shockley's equation of a KT
VT 
semiconductor diode in the forward bias q
T  27  273  300 kelvin
regions?
1.38 1023  300
(A) ID  IS  e D V 2/ VT
 1 VT 
1.6  1019
 0.0259 volt  26mV.
(B) ID  IS  eVD / VT  1

(C) ID  IS  enVD / VT  1 4. The disadvantages of atypical MOSFET as

(D) ID  IS  eVT / VD  1 compared to BJT is


(A) Increased power-handling levels
where IS is reverse saturation current
(B) Reduced power-handling levels
VD is applied forward-bias voltage across the
(C) Increased voltage-handling levels
diode
(D) Reduced voltage-handling levels
VT is thermal voltage
Key: (D)
n is an ideality factor
Exp: The MOSFETs cannot be used for high
Key: (B)
voltage applications when compared to BJT
Exp: For an abrupt pn junction diode, the diode
due to the following reasons.
current is modelled by William Shockley as

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1
IES Paper-II [Set-B] |EE|

1. High voltage causes damage of gate 6. For most FET configurations and for
insulator of the MOSFET by Electrostatic common-gate configurations, the input
Discharge (ESD). impedances are respectively
2. When the supply voltage VDD (hence (A) High and high

VDS) becomes very high, the MOSFET’s (B) High and low

threshold voltage decreases due to drain (C) Low and low

induced barrier lowering. This causes (D) Low and high

reliability issues. Key: (C)


3. At larger VDS, hot electron effect causes Exp: For a common gate MOSFET amplifier the

electrons to enter inside the gate insulator and input resistance is given by

modifies threshold voltage. Hence the R D  r0


R in 
1  g m r0
MOSFET becomes useless for proper
operation. Neglecting channel length modulation
1
R in 
gm
5. Which one of the following conditions will be
satisfied for an impedance matched system? Thus, the input impedance of the common
(A) The decibel power gain is equal to twice gate amplifier is low provided gm is large and
the decibel voltage gain the output resistance
(B) The decibel power gain is equal to the R out  R D which is also low.
decibel voltage gain
(C) The decibel power gain is half the decibel 7. The dB gain of cascaded systems is simply
voltage gain (A) The square of the dB gains of each stage
(D) The decibel power gain is equal to thrice (B) The sum of the dB gains of each stage
the decibel voltage gain (C) The multiplication of the dB gains of
Key: (A) each stage
Exp: Power gain (dB) (D) The division of the dB gains of each stage
  Vout
2
  Key: (B)

P  Exp: For n-stages of amplifiers
10log  out   10 log  out
R 
 Pin  V2  A net  A1 , A 2 ....A n (for cascaded system)
 in 
 R in    20 log  A net   d B
For impedance matched system R out  R in  20log A1  20 log A 2  ...........  20log A n
 dB gain  dB gain A1
Power gain (dB)
 dBgain A 2  ..............  dB gain of A n
2
V  V 
= 10 log  out   2 10 log  out 
 Vin   Vin 
Power gain (dB) = 2 Voltage gain (dB).

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2
IES Paper-II [Set-B] |EE|

8. The Miller effect input capacitance CMi is dv o


The slew rate, SR 
dt
(A) 1  A 2V  Cf
max

 dv 
 AV  i 
(B) 1  AV  Cf  dt  max

SR 2  106
(C) 1  Cf  AV Av    40
 dvi   0.5 
   6 
(D) 1  Cf2  A V  dt   10  10 
Vo
where Cf = feedback capacitance A V 
Vi 10. A negative feedback amplifier where an input
Key: (B)
current controls an output voltage is called
Exp:
(A) Current amplifier
Miller 's theorem
(B) Transconductance amplifier
ZF
(C) Transresistance amplifier
(D) Voltage amplifier

1 2 Key: (C)

Amp
v1 (A V) v2 Exp: For a transresistance amplifier the input is a
2' current signal and the output is voltage signal.
1'
i in

Transresistance RL V
1 2 is RS amplifier 0
Amp 
z1 (A V) z2

1' 2'

Feed back
Vf Unit

ZF 1 1
Z1   
1  A V 1  A V 1  A V  CFS
11. In emergency lighting system, the component
Cmi  1  A V  CF
used for maintaining the charge on the battery is
(A) LED
9. For an op-amp having a slew rate of 2V/μs, if
(B) Shockley diode
the input signal varies by 0.5V in 10μs, the
(C) Thermistor
maximum closed-loop voltage gain will be
(D) SCR
(A) 50
Key: (C)
(B) 40
Exp: Thermistor is a key component in the
(C) 22
charging systems for Lithium-Ion batteries
(D) 20
used in emergency lighting system. The
Key: (B)
overheating of battery during charging cycle
Exp: Let the input to an amplifier Vi reduces the battery life. So thermistor based
The output Vo  AV Vi temperature sensors are used to sense the

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3
IES Paper-II [Set-B] |EE|

temperature of the battery and accordingly 14. The time delay Δt introduced by a SISO shift
adjust the charging current for extending the register in digital signals is given by
life time of the batteries. 1
(A) N 2 
fc

12. For RC phase shift oscillator using FET, the (B) N2  f c


gain of the amplifier stage must be practically fc
(C)
somewhat greater than N
(A) 27 1
(D) N 
(B) 28 fc
(C) 29 where N is the number of stages
(D) 30 fc is the clock frequency
Key: (C) Key: (D)
Exp: For a RC phase shift oscillator made of Field Exp: Using SISO shift register, we can introduce
Effect Transistor (FET), time delay " t" in digital signals given by
The feedback factor, 1
t  N  T  N 
fc
1
 
1  5   j 6   2 
2
Where, N = Number of stages
1 T = Time period of CLK pulse

RC fc = CLK frequency
For the phase shift of 180 we have Note: The amount of delay can be controlled
 6 by the "fc " or number of ffs in the shift
1
f register. Two options easily can be eliminated
2 6RC
as they doesn't have unit of time.
At that frequency AB  1 makes
1
A  29, and   15. An analog output voltage for the input 1001 to a
29
4 bit D/A converter for all possible inputs
assuming the proportionality factor K=1 will be
13. The time delay in a look-ahead carry adder is
(A) 9
independent of
(A) Number of operands only (B) 6
(C) 3
(B) Propagation delay only
(C) Number of bits in the operand only (D) 1

(D) Bits in the operand, number of operands Key: (A)

and propagation delay Exp: Vo  K  decimal equivalent 


Key: (C)  1   23  1 0  22  0  21  20 1
Exp:The time delay in look ahead carry adder is  1   8  1  9.
independent of number of bits in the operand
only.

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4
IES Paper-II [Set-B] |EE|

16. In microprocessor interface, the concept of Exp: A 2E16 001011102


detecting some error condition such as 'no C 6 C16 01101100
match found' is called ADDC A  C  A
(A) Syntax error 00101110
(B) Semantic error 01101100
(C) Logical error 10011010

(D) Error trapping From the result we can say


Key: (D) S1, Z0, AC1,P 1,Y 0
Exp: In microprocessor a interface the concept of
detecting some error condition such as "no
19. When an information signal is multiplied by
match found" is called Error trapping.
an auxiliary sinusoidal signal to translate its
frequency, the modulation is called
17. The maximum number of input or output
(A) Phase modulation
devices that can be connected to 8085
(B) Frequency modulation
microprocessor are
(C) Amplitude modulation
(A) 8
(D) Quadrature amplitude modulation
(B) 16
Key: (C)
(C) 40
Exp: y  t   m  t  cos c t
(D) 256
m  f  fc   m  f  fc 
Key: (D) y f  
2
Exp: The maximum no. of Input or output device
Given the maximum value of the analog
that can be connected to 8085 microprocessor
sample is to be represented with in 0.1%
is 28 256. accuracy.
With respect to each distinct port address we 
0.1% Am 
can connect a input /output device. 2
2A
 ; L  2n
L
18. The contents of the accumulator and register
So, 2n  1000
C are 2EH and 6CH respectively. The n  log 21000
instruction ADD C is used. The values of AC n  10.5
and P flags are n  11
(A) 0 and 0
(B) 1 and 1 20. The transmission power efficiency for a tone
(C) 0 and 1 modulated signal with modulated index of 0.5
(D) 1 and 0 will be nearly
Key: (B) (A) 6.7%
(B) 11.1%

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5
IES Paper-II [Set-B] |EE|

(C) 16.7% (A) 5,000 Hz


(D) 21.1% (B) 10,000 Hz
Key: (B) (C) 15,000 Hz
(D) 20,000 Hz
2
Exp: Transmission efficiency 
2  2 Key: (A)

Given   0.5 Exp: m  t   2cos 6000 t  4cos 8000 t  6cos10000 t


  
f mi  f2  f3 
 0.5
2

  0.111 3kHz 4kHz 5kHz


2   0.5 
2

They have asked sampling rate using band


  11.1%.
pass consideration.
Hence, we cannot use concept of fs  2f max
21. For practical purposes, the signal to noise ratio
5
for acceptable quality transmission of analog K  2.5  2
3 2
signals and digital signals respectively are
 nearest digit not exceeding 2.5
(A) 10-30 dB and 05-08 dB
2f max 2  5kHz
(B) 40-60 dB and 10-12 dB  fs min    5kHz
K 2
(C) 60-80 dB and 20-24 dB
24. If 'N' signals are multiplexed using PAM band
(D) 70-90 dB and 30-36 dB
limited to f M, the channel bandwidth need not
Key: (B)
be larger than
fM
22. The discrete samples of an analog signal are (A) N.
2
to be uniformly quantized for PCM system. If
(B) N.f M
the maximum value of the analog sample is to
(C) 2N.f M
be represented within 0.1% accuracy, then
minimum number of binary digits required (D) N 2 .f M
will be nearly Key: (B)
(A) 7 Exp: Number of signals = N
(B) 9 RS  bit rate  N.fs
(C) 11 fs  2f m  highest frequency 
(D) 13 Rb
Channel bandwidth 
Key: (C) 2
 Nf m
Minimum bandwidth  Nf m
23. A signal: m  t   2cos 60000 t 
4cos8000t 6 cos10000t 1
Concentration  6.02  1023   8.4
is to be truthfully represented by its samples. 63.5
 7.96  1022 atoms / cm3
The minimum sampling rate using band pass
Voice changes
consideration will be
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6
IES Paper-II [Set-B] |EE|

25. A linear discrete- time system is characterized 28. The complex exponential Fourier represen-
by its response h k  n    n  k  u  n  k  to a tation for the signal
x  t   cos 0 t is
delayed unit sample   n  k  . The system



will be (A) k  k
c e jk0 t
(A) Shift invariant


(B) k 
ck e j0 t
(B) Shift variant


(C) Scale invariant (C) k  k
c e2 jk0 t


(D) Scale variant 
(D) k 
ck e jk0 t
Key: (B)
Key: (D)

26. Consider the analog signal


x a  t   3 cos 100t 29. The continuous LTI system is described by
The minimum sampling rate FS required to dy  t 
 2y  t   x  t 
avoid aliasing will be dt
(A) 100Hz Using the Fourier transform, for
(B) 200Hz x  t   e t u  t  , the output will be

(A)  e t  e2t  u  t 
(C) 300Hz
(D) 400Hz
Key: (A) (B)  et  e2t  u  t 

Exp: x a  t   3cos100f (C) e t


 e2t  u  t 
 fs min  2f max  to avoid aliasing 
(D)  et  e2t  u  t 
 2  50  100Hz.
Key: (C)

27. The response of the system y  n   x  n  to dy  t 


Exp:  2 Yt  Xt
dt
the following input signal
by fourier transform  j  2  Y  j  X  j
 n , 3  n  3 Y  j 
x n   1
0, otherwise 
X  j   j  2 
(A) Is delayed from input If X  t   U  t  , then Y  j
(B) Is exactly same as the input 1 1
 .
(C) Leads the input  j  2   j  1
(D) Varies with signal IFT  Y  t    e  t  e 2t  U  t 
Key: (B)
Exp:As y  n   x  n  , Hence response is exactly 30. The discrete Fourier series representation for

same as the input. the following sequence

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7
IES Paper-II [Set-B] |EE|

n 32. How many bits are required in an A/D


x  n   cos n is
4 converter with a B+1 quantizer to get a signal-
1 j0 n 1  j0 n  to-quantization noise ratio of at least 90 dB
(A) e  e and 0 
2 2 8
for a Gaussian signal with range of  3x ?
1 1 
(B) e j0 n  e2 j0 n and 0  (A) B+1 = 12 bits
2 2 4
1  j0 n 1  j0 n  (B) B+1=14 bits
(C) e  e and 0 
2 2 6 (C) B+1=15 bits
1 j0 n 1 j7 0 n  (D) B+1=16 bits
(D) e  e and 0 
2 2 4 Key: (D)
Key: (A)
Exp: Signal power 2x  variance
 
Exp: x  n   cos  n 
4  2
Noise power 
 12
Discrete fourier series x  m    cke jn0 K
k  Am  P  P 

 2n
From given signal, 0  and
8 Am  p  p   3 x   3 x   6 x
1 1
C1  and C  1  SNR 
S 22n

2 2 Nq 3
1 j. 0 n 1  j0 n 
x n  e  e where 0  .
2 2 8 SNR in (dB)  6n  48dB  90dB
n  16 bits
31. Consideration the discrete-time sequence n  B  1 bit quantizer
 nx 
x  n   cos   When sampled at
 8  33. Let x(n) be a left-sided sequence that is equal
frequency fS  10kHz, then f 0 the frequency 3z 1  2z 2
to zero for n  0. If X  z   ,
of the sampled continuous time signal which 3  z 1  z 2

produced this sequence will at least be then x(0) will be

(A) 625 Hz (A) 0

(B) 575 Hz (B) 2

(C) 525 Hz (C) 3

(D) 475 Hz (D) 4

Key: (A) Key: (B)

2f 0  2f 0
Exp: Digital frequency, W   
fs 8 10k
10k
f0   625Hz
16

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8
IES Paper-II [Set-B] |EE|

3z 1  2z 2 35. If the complex multiply operation takes 1μs,


Exp: x  z   for signal is left sided
3  z 1  z 2 the time taken to compute 1024-point DFT
z  z  3
2 1
2z  3z2 1
 2  5z  .... directly will be nearly
2 1
2z  2z  6 (A) 3.45s
1
5z  6 (B) 2.30s
Signal is left sided so x  0   2. (C) 1.05s
(D) 0.60s
Key: (C)
34. The noise variance 2 at the output of
Exp: Number of complex multiplications required
0.5z
H z  with respect to input will be
z  0.6 Direct computation of FFT is

nearly N2  1024 1024  1048576


(A) 40% Time taken each computation is 1 s
(B) 50% So, T  1.048 sec  1.05 sec
(C) 60%
(D) 70% 36. Consider the following data to design a low
Key: (A) pass filter
Exp: Given 
Cut-off frequency c  ,
0.5z  z  2
H z   0.5  
1  0.6z 1  0.6z  Stop band ripple s  0.002,
 1  Transition bandwidth no larger than 0.1π.
 0.5  1 
 1  0.6z 
Kaiser window parameters β and N
By Inverse z-transform respectively are
h  n   0.5  0.6 
n
(A) 2.99 and 45
(B) 4.99 and 45
No
Let’s take Sx  f  
2 (C) 2.99 and 65
No
Sy  f   H    . (D) 4.99 and 65
2

2
Key: (D)
Noise power at output
Exp: A  20log 5
N 
 o  H  f  df P  0.1102  A  8.7 
2

2 
A 8
No  N 1
 h  n  dx
2
 2.2852b
2 
Using kaiser window
N 0.25 N 25
 o  o A  54, B  4.992
2 1  0.36 2 64
No N  65
 0.39
2
Output power = 40% of input power.

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9
IES Paper-II [Set-B] |EE|

1  sT 1
37. A transfer function G  s   has a phase B.W 
1  sT Gain

 2tan T  , which varies from


1 K
angle of B.W CLTF Gain  OLTF
Hence   K 1 K
0to  180 as ω is increased from 0 to . It B.W OLTF Gain  CLTF 1 K

is the transfer function for


(A) All pass system 39. The system sensitivity of open loop closed
(B) Low pass system loop system are respectively
(C) High pass system 1
(A) 1 and
(D) Band pass system 1  GH
Key: (A) 1
(B) and 1
1  GH
Exp: Gj 1 for all frequency & and phase
1
0o to  180 (C) and 1
GH
Hence it is all pass system. 1
(D) 1 and
GH
38. The open-loop and closed-loop transfer Key: (A)
functions of a system are respectively given by Exp: Sensitivity of open loop system is
K dG
G s  ;  open loop 
j  1 SGG  G 1
K G
1  K  1
G s  ;  closed loop  Sensitivity of closed loop system is
jc  1 1  GH
The ratio of the bandwidth of closed loop to
open loop system is 40. The steady state error of a type-1 system unit

(A) K step input is

(B) (1+K) 1
(A)
(C) 1  K 
2 1  K p 
(B) 0
K2
(D) (C) 
1  K 
1
Key: (B) (D)
Kv
Exp: Gain of OLTF = K
Key: (B)
K
Gain of CLTF= Exp: ess  steadystate error  for unit
1 K
1
Step input 
1  lim G  s  H  S
s 0

If G(S) H(S) is type –1, then

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10
IES Paper-II [Set-B] |EE|

K p  lim G S H  S  43. The lag system of a 'lag-lead compensator' has


s 0

1 one pole and one zero. Then pole and zero are
 ess  0
1  (A) Real and pole is to the left of zero
(B) Real and pole is to the right of zero
41. The direction of the net encirclements of the (C) Imaginary and pole is above zero
origin of Real-Imaginary plane in a Nyquist (D) Imaginary and pole is below zero
plot for the system to be stable is Key: (B)
(A) Clockwise of the origin Exp: Lag lead compensator pole – zero diagram
(B) Counter-Clockwise of the origin location
(C) Left hand side s-plane
(D) Right hand side s-plane
Key: (B)
Exp: If Nyquist contour direction is clockwise,
Lead
then Nyquist plot in counter – clockwise of lag
pole
the origin doesn’t enclose any point inside. right of zero
Hence, system will be stable.
44. A system with characteristic equation
42. A unity negative feedback control system has F  s   s4  6s3  23s2  40s  50
an open-loop transfer function as
will have closed loop poles such that
K  s  1 s  2 
G s  (A) All poles lie in the left half of the s-plane
 s  0.1 s  1 and no pole lies on imaginary axis
The range of values of K for which the closed (B) Two poles lie symmetrically on the
loop system is stable will be imaginary axis of the s-plane
(A) 0  K  0.3 (C) All four poles lie on the imaginary axis of
(B) K  0.3 the s-plane
(C) K  3 (D) All four poles lie in the right half of the s-
(D) K  0.3 plane
Key: (B) Key: (A)
Exp: 1  G  S H S  0  characteristic equation Exp: Characteristic equation
  s  0.1 s  1  k  s  1 s  2   0 s4 6s323s2 40s500
 s 2 1  k   s  3k  0.9    2k  0.1  0 s4 1 23 50
3
For stability coefficient must be positive for s 6 40 0
2
second order system. s 16.33 50 0
s1 21.63 0 0
1  K  0  K  1
s0 50
3K  0.9  0 K  0.3  valid condition
2K  0.10 K  0.05
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11
IES Paper-II [Set-B] |EE|

No sign changes occurs in the first column of c  t   1  0.2e60t  1.2e10t


RH table. Hence all poles lie in the left half
The expression for the closed loop transfer
of the s-plane and no pole lies on imaginary
function is
axis.
100
(A)
 s  60  s  10 
45. A unity feedback (negative) system has open 600
(B)
loop transfer function  s  60  s  10 
K 60
G s  (C)
s s  2  s  60  s  10 
The closed loop system has a steady-state unit 10
(D)
ramp error of 0.1. The value of gain K should be  s  60  s  10 
(A) 20 Key: (B)
(B) 30 Exp: C  t   1  0.2e60t  1.2e10t
(C) 40 C    1  0  0  1
(D) 50 Now cross check from option, which has final
Key: (A) value 1 that would be correct answer.
Exp: For ramp input From option (B)

A s.600 1 
ess  lim    input 
Kv s 0  s  60  s  10   s 
K K 600
K v  lim s G  s  H  s   .1  s    1.  Hence Bis correct 
s 0 s s  2 2 60  10
1
 ess   0.1  K  20
K/2 48. If it is possible to transfer the system state
x  t 0  to any desired state x(t) in specified
46. Transfer function of discrete time system finite time by a control vector u(t), then the
derived from state model is given by system is said to be
(A) C  zI  A  B  D
1
(A) Completely observable
(B) Completely state controllable
(B) C  zI  A  D  B
1

(C) Random state system


(C) B  zI  A  D  C
1
(D) Steady state controlled system

(D) D  zI  A  B  C
1 Key: (B)
Exp: If it is possible to transfer the system state
Key: (A)
x(to) to any desired state x(t) in specified
Exp: TF  C zI  A B  D
1
finite time by control vector u(t), then the
system is said to be completely state
47. The closed-loop response of a system controllable.
subjected to a unit step input is
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12
IES Paper-II [Set-B] |EE|

49. Consider the following statements regarding (A) 98%


parallel connection of 3-phase transformers: (B) 95%
1. The secondaries of all transformers must (C) 92%
have the same phase sequence. (D) 87%
2. The phase displacement between primary Key: (B and A)
and secondary line voltages must be the Exp: If we go for calculations, we get answer as
same for all transformers which are to be 95%. But according to variation of efficiency
operated in parallel. with respect to load current there will be a
3. The primaries of all transformers must possibility of getting efficiency more than
have the same magnitude of line voltage. 95%. So, in this case option (A) will be the
Which of the above statements are correct ? answer.
  98%
(A) 1, 2 and 3
(B) 1 and 3 only
95%
(C) 1 and 2 only
(D) 2 and 3 only
Key: (A)
Exp: Conditions for parallel operation of 3-phase load
0.6 F.L
transformers:
75%
1. Phase sequence of two transformers must 500  1
FL Upf    0.95
be same. (Hence statement-I is correct) 500  1  Wcu  Wi
2. Phase displacement between primary and Wcu  Wi  26.61 kW

secondary line voltage of the two 300  1


60%FL Upf    0.95
300  1   0.6  Wcu  Wi
2
transformers must be same. (i.e. they
 0.6  Wcu  Wi  15.78 kW
2
must be of the same vector group).
Hence Statement II is correct. 0.36Wcu  Wi  15.78 kW
3. Instantaneous polarities of the two Wcu  Wi  26.31
transformers being connected in parallel 0.36Wcu  Wi  15.78
must be same and must have the same 0.64Wcu  10.53

magnitude of line voltage. Hence 10.53


Wcu   16.45 kW
statement III is also correct. 0.64
Wi  26.31  16.45  9.86 kW

50. A 500 kVA transformer has an efficiency of 375  1


3 
FL  Upf 
375  1   0.75   16.45  9.86
2
95% at full load and also at 60% of full load, 4

The efficiency  of the 375


both at upf.   100  95%
394
transformer at ¾th full load will be nearly

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13
IES Paper-II [Set-B] |EE|

51. What is the condition of retrogressive winding (C) Increasing the flux density under one half
in dc machines? of the pole
(A) Yb  Yf (D) Keeping the direction of rotation of

(B) Yb  Yf generator in the same direction as motor


Key: (B)
(C) Yb  Yf
Exp: The cross-magnetizing effect of the armature
(D) Yb  0.5Yf
reaction can be reduced by making the main
Key: (B)
field ampere-turns larger compared to the
Exp: For retrogressive winding yb  yf armature ampere-turns such that the main
For progressive winding yb  yf field mmf exerts predominant control over the
air-gap flux. This is achieved by introducing
52. What is the useful flux per pole on no load of saturation in the teeth and pole-shoe.
a 250V, 6-pole shunt motor having a wave
connected armature winding with 110 turns, 54. A 500kW, 500V, 10-pole, dc generator has a
armature resistance of 0.2 and armature lap wound armature with 800 conductors. If
current 13.3A at no load speed of 908 rpm? the pole face covers 75% of pole pitch, the
(A) 12.4 mWb number of pole-face conductors in each pole
(B) 22.6 mWb of a compensating winding will be
(C) 24.8 mWb (A) 12
(D) 49.5 mWb (B) 10
Key: (C) (C) 8
Exp: Given, (D) 6
250V  Vt , P  6, z  110  2  220, Key: (D)
R a  0.2 Exp: No. of compensating winding
Ia  13.3A, N NL  908rpm, Z  Pole arc 
Conductor/pole, ZC   ;
A  2  wave windings  PA  Pole pitch 
PNZ Where P  No. of pole,
Ea    250  13.3  0.2 
60A A  No.of parallel path
6    908  220
 800
60  2   0.75  8  0.75  6
   0.02476Wb or 24.8mWb 10  10

53. The cross-magnetizing effect of the armature


reaction can be reduce dby 55. Cogging in an induction motor is caused
(A) Making pole shoes flat faced (A) If the number of stator slots are unequal
(B) Making the main field ampere-turns to number of rotor slots
larger compared to the armature-ampere (B) If the number of stator slots are an
turns integral multiple of rotor slots
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14
IES Paper-II [Set-B] |EE|

(C) If the motor is running at fraction of its Key: (A)


rated speed Exp: Effective armature resistance R a  eff  of a
(D) Due to 5th harmonic synchronous machine is
Key: (B)
Short circuit load loss(3.)

Exp: Cogging is known as Magnetic locking, and 3  ISC
2

magnetic locking occurs if the no. of stator Short circuit load loss(per phase)

 ISC 
2
slots are an integral multiple of rotor slots.

Where ISC  short circuit armature current


56. A 500 hp, 6-pole, 3-phase, 440V, 50Hz
induction motor has a speed of 950 rpm on
58. A 3-phase synchronous motor has 12-poles
full-load. The full load slip and the number of
and operates from 440V, 50 Hz supply. If it
cycles the rotor voltage makes per minute will takes a line current of 100 A at 0.8 power
be respectively factor leading, its speed and torque are nearly
(A) 10% and 150 (A) 500 rpm and 1165 N-m
(B) 10% and 125 (B) 1000 rpm and 2330 N-m
(C) 5% and 150 (C) 500 rpm and 2330 N-m
(D) 5% and 125 (D) 1000 rpm and 1165 N-m
Key: (C) Key: (A)
Exp: Full load slip = Exp: As we know, synchronous motor speed is

Ns  N r 1000  950 always synchronous speed


  0.05  5%
Ns 1000 120  50
NS   500rpm
12
The no. of cycles the rotor voltage
Power input  3  440  100  0.8
makes/minute=
 60968.188W
0.05 50  60  150cycle/minute. P  T  S
P 60968.188  60
T 
57. Effective armature resistance Ra(eff) of a S 2  500
synchronous machine is 1164.4066 N-m  1165N-m

Short circuit load loss  per phase 


(A) 59. Which of the following are the advantages of
Short circuit armature current 
2

using a stepper motor?


Short circuit load loss  per phase  (A) Compatibility with transformers and
(B)
Short circuit armature current  sensors needed for position sensing
Totalshort circuit load loss (B) Compatibility with digital systems and
(C)
Short circuit armature current sensors are not required for position and
Totalshort circuit load loss speed sensing
(D)
Short circuit load current

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15
IES Paper-II [Set-B] |EE|

(C) Resonance effect often exhibited at low The machine losses increases and the
speeds and decreasing torque with temperature of the machine rises.
increasing speed
(D) Easy to operate at high speeds and 61. What are the values of k for which the system
compatible with analog systems of equations
Key: (B)
 3k  8 x  3y  3z  0
Exp: Stepper motors are compatible with digital
3x   3k  8  y  3z  0
system due to discrete control available.
3x  3y   3k  8  z  0

60. The disadvantage of hunting in synchronous has a non-trivial solution?

machines is 2 11 10
(A) k  , ,
(A) Fault occurs in the supply system 3 3 3

(B) Causes sudden change in inertia 2 10 11


(B) k  , ,
(C) Causes large mechanical stresses and 3 3 3
11 11 11
fatigue in the rotor shaft (C) k  , ,
3 3 3
(D) Causes harmonics
2 11 11
Key: (C) (D) k  , ,
3 3 3
The phenomenon of oscillation of the rotor
Key: (D)
about its final equilibrium position is called
3k  8 3 3
Hunting. On the sudden application of load,
Exp: 3 3k  8 3 0
the rotor search for its new equilibrium 3 3 3k  8
position and this process is known as Hunting. 3k  2 3 3
The Hunting process occurs in a synchronous  3k  2 3k  8 3 0
motor as well as in synchronous generators if 3k  2 3 3k  8
an abrupt change in load occurs.
By applying C1  C1  C2  C3 
Effect of Hunting
R 2  R 2  R1; R 3  R 3  R1; we have
The various effects of hunting are as follows:-
It can lead to loss of synchronism. 3k  2 3 3
It can cause variations of the supply voltage  0 3k  11 0 0
0 0 3k  11
producing undesirable lamp flicker.
The possibility of Resonance condition   3k  2   3k  11 3k  11  0
increases. If the frequency of the torque  Expanded along C1 
component becomes equal to that of the   3k  2   0; 3k  11  0; 3k  11  0
2 11 11
transient oscillations of the synchronous k ;k ;k 
3 3 3
machine, resonance may take place.
Large mechanical stresses may develop in the
rotor shaft.
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16
IES Paper-II [Set-B] |EE|

 2  i 3 1  3i  Similarly;
62. If A    then AA* will be  2 y  6  x  1  2   6x 2  2 
2
 5 i 4  2i   
(where, A* is the conjugate transpose of A)  6  x  1  2x   2  6x 2  2
2

(A) Unitary matrix  6x 2  6  12x  2  6x 2  2


(B) Orthogonal matrix Now 3 y  12  x  1  6  12x  6
(C) Hermitian matrix  12x  12  6  12x  6  12
(D) Skew Hermitian matrix  y  12
3

Key: (C)
64. The solution of the differential equation
 2i 5 
2  i 3 1  3i  
Exp: AA*     3 i  x2
d2 y
x
dy
 y  log x is
 5 i 4  2i  2
 1  3i 4  2i 
dx dx

5  9  10 20  2i  (A) y   c1  c2 x  log x  2log x  3



 20  2i 25  1  20 
 24 20  2i 
 
(B) y  c1  c2 x 2 logx  logx  2

46 
,
 20  2i (C) y   c1  c2 x  log x  log x  2
which is Hermitian matrix (D) y   c1  c2 log x  x  log x  2
 A  A 

Key: (D)

63. If y  2x 3  3x 2  3x  10, the value of 3 y Exp:  x 2 D   xD  1 y  log x


will be     1    1 y  z;
 
(where,  is forward differences operator) d
where   and z  log x.
(A) 10 dz

(B) 11     1    1  0
(C) 12  2  2  1  0
(D) 13     1  0    1,1
2

Key: (C)
yC  ez c1  c2 z
Exp: Given y  2x 3  3x 2  3x  10  f  x 
1
yp  z
 y  f  x  1  f  x    2  1
2

  2  x  1  3  x  1  3  x  1  10   y p  1   2  2  
1
3 2
  z
  2x 3  3x 2  3x  10   y p  1   2  2    z   z  2(1)
y  2  x 3  1  3x 2  3x   3  x 2  1  2x   yp  z  2
3x  3  10  2x 3  3x 2  3x  10  y  ez  c1  c2 z   z  2
 2x  2  6x  6x  3x  3
3 2 2
y  x c1  c2 log x   log x  2
6x  3x  7  2x 3  3x 2  3x  10
 6x 2  2

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17
IES Paper-II [Set-B] |EE|

65. The area between the parabolas 4a


 y2 
y2  4ax and x 2  4ay is
 
y0 
2 ay   dy
4a 
  32  3 
 2 a  y   1  y  
2 2
(A) a
3   3  4a  3  
  2 
14 2 
(B) a 4a
3
4 a 1 y0
 4a  2   64a 3 
3
16 2 
(C) a 3  12a
3
17 2 45  16 2
(D) a  a  a
3 3 3
32 16 16
Key: (C)  a2  a2  a2
3 3 3
Exp: Area between the parabolas,
4a 2 ay 4a

 x
66. The volume of the solid surrounded by the
A   dx dy   
2 ay
dx dy  y2
.dy
y  ox 
y2 y 0 4a surface
4a
23 23 23
x 2  4ay x  y z
       1 is
a b c
 4a, 4a  4abc
(A)
35
R abc
(B)
35
 0,0 2abc
(C)
35
abc
(D)
35
y2  4ax
Key: (A)
y2
{y 2  4ax   4a 23 23 23
x x  y z
Exp:        1 …(1)
x2 a b c
x 2  4ay   4a
y 2 2 2
 x 1 3    y 1 3    z 1 3 
y2 x 2 Let               1
   a     b     c  
x y 13

y x
x x
u  u3 ;
3 3
 
a a
yx
13
y y
 y  4ax
2
  v  v3 ;
b b
x 2  4ax 13
z z
  w  w3
 x  x  4a   0  x  0; x  4a c c
y0 y  4a}  dx  3au 2 du
dy  3bv 2 dv
dz  3cw 2 dw
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18
IES Paper-II [Set-B] |EE|

The equation (1) of solid becomes  1 xy 


(B) f  ,   0
u  v  w  1sphere .
2 2 2
 xy z 
1 1 
v   dxdydz   27abc u 2 v 2 w 2dudv dw (C) f   , xyz   0
v x y 
 27abc  u 2 v 2 w 2 du dv dw ..  I   1 1 1 xy 
(D) f    ,   0
x y z z 
By taking spherical coordinates,
Key: (A)
u  r sin  cos , v  r sin  sin ,   r cos 
du dv dw  r 2 sin  dr d d z z
Exp: Let P  ,q
x y
Now (I) becomes
 r 2 sin 2  cos 2 .   x 2 p  y2q   x  y  z …(1)
1  2
 
v  27abc     r 2 sin 2  sin 2 .  dr d d Lagrange’s equations corresponding to
r  0  0  0  2 
 r cos  r sin  
2 2 equation (1) are
1  dx dy dz
v  27abc  r 8dr  2  …(1)
 sin  cos 2  d  x  y z
5
2
x y
r 0  0
2
dx dy 1 1
 sin  cos   d   2   2 dx   2 dy
2
2
 0 x y x y
1
 2  1 1
v  27abc  r 8dr  2   sin 5 .cos 2 d     c1
r 0  0  x y
 2
 1 1
 2  2   sin  cos d     c1 …(2)
2 2

 0  x y
1
 r9  By using Lagrange multipliers
 27  8  abc  
 9 0 z z
, and 1, then (1) becomes
x y
  5  1 5  3 2  1 
 
 7   7  2  7  4  7  6    z z
   dx    dy  1.dz
  2  1 2  1    x y
   z   z 
 4   4  2   2 x 2    y 2    xz  yz
 x   y 
1  4  2 1 11 
 27  8  abc       z  z
 9  7  5  3 1 4  2 2   dx    dy  dz
4abc  x  y
 
35  zx  zy  zx  zy
 z  z
  dx    dy  dz
 x  y
67. The solution of the partial differential 
0
equation
 z  z
z z    dx    dy  dz
x2
 y2   x  y  z is  x  y
x y
1 1 1
 1 1 xy   dx  dy  dz
(A) f   ,   0 x y z
x y z 
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19
IES Paper-II [Set-B] |EE|

 nx  ny  nz  nc 2 n


(C) 2n 1 cos
 By integrating on both sides  6
 nxy  nzc 2 n
(D) 2n 1 sin
 xy  zc 2 6

xy Key: (C)
 c2  …(3)
   
z n n
  2ei  6 
n
Exp: 3 1  3 i
 The required solution of given partial
  2ei  6  ;
n
D.E is
 1 1 xy 
f  u, v   0  f   ,   0; Since polar force of 3  i  2ei  6 and
x y z 
 from  2  and  3  Polar form of 3  i  2ei  6

   
n n
1 1
Where u   ; v 
xy 3 i 3 i
x y z
 2n ei n 6  2n ei  n 6 
2i
2
  n   n  
68. The complex number   is cos  6   isin  6  
 3i      
 2n 
  n   n  
1     cos    isin   
(A)  cos  isin    6   6 
2 4 4
  n    n 
1    2n  2cos     2n 1.cos  
(B)  cos  isin    
6  6 
2 2 2
1
(C)  cos   isin  
2 70. The nature of singularity of function
1  
(D)  cos  isin  1 
2 6 6 f z  at z  is
cos z  sin z 4
Key: (B)
(A) Removable singularity
2  i    2  i  3  i    5  5i 
2 2 2

Exp: 
(B) Isolated singularity
  
  
 3i   9 1   10  (C) Simple pole
25 1 i
 1  i    2i   (D) Essential singularity
2

100 4 2
Key: (C)
i 1  i  2   1 

2i  
2

     e   cos  isin  Exp: Method-I:


 3i  2 2   2  2 2

At z  ; cos z  sinz  0
4
69. If n is a positive integer then, But

    1
n n
1
3 i  3 i is  cos z  sin z  '   sin z  cos z  
2 2
n 2
(A) 2n sin   20
6 2
n 
(B) 2n cos z is a simple zero of  cos z  sin z 
6 4
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20
IES Paper-II [Set-B] |EE|

 P  r   n cr p q
r n r
1
Given function f  z  
cos z  sin z n!
 pr q n r
 r! n  r !
 z is a simple pole of f(z);
4 n!
 pr q n r
 r! n  r  n  r  1!
Since at z  ; numerator function  0
4 n!
 p  r n  r   p r q n  r …(1)
Method 2: r! n  r  1!
In case of pole of order ‘1’
p  r  1  n cr1 p r q n  r pq 1
  1 0
lim  z  
  0 
n!
z 
4 4  cos z  sin z  p r q n  r pq 1
 r  1! n   r  1 !
1 1 p
lim  0 
n!
pr q n r  
4  sin z  cos z
z  2  r  1 r! n  r  1! q

 z is a simple pole. q n!
4  p  r  1 r  1  pr q n r
p r! n  r  1!
Similarly in case of pole of order ‘n’;

lim  z  a   f  z   0,
n

z a    From (1) and (2);


Then z = a is a pole of order ‘n’. q
p  r  n  r   p  r  1 r  1
p
n  rp
 p  r  1  .p  r 
71. If X is a discrete random variable that follows
Binomial distribution, then which one of the  r  1 q
following response relations is correct?
nr 72. If the probability that an individual suffers a
(A) P  r  1  Pr
r 1 bad reaction from a certain infection is 0.001,
p what is the probability that out of 2000
(B) P  r  1  P  r 
q individuals, more than 2 individuals will
nr p suffer a bad reaction?
(C) P  r  1  Pr
r 1 q 1 5
(A) 
nr p 2 e2
(D) P  r  1  Pr 5
r 1 q (B) 1.2  2
e
Key: (D) 5
(C) 1  2
e
Exp: From Binomial distribution, we have
5
P  x  r   P  r   nc r p r q n  r
(D) 2
e
P  x  r  1  P  r  1  nc r 1.p r 1 q n  r 1 Key: (C)
n r 1
 ncr 1.p .pq r
q Exp: Let A be the event that an individual suffers a
bad reaction

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21
IES Paper-II [Set-B] |EE|

1 (A) Silver
Given, p  A   0.001 
1000 (B) Tin
Total numbers of individuals = n = 2000 (C) Nickel
1 (D) Aluminium
 np  2000   2  .[Average]
1000 Key: (C)
P  x  2  ?
x  number of individuals 75. The saturation magnetization for Fe3O4 ,
suffer a bad reaction given that each cubic unit cell contains 8Fe2
p  x  2  1  p  x  2  and 16Fe3 ions, where Bohr magneton is
 1   p  0   p 1  p  2   9.274 × 10–24 A.m2 and that the unit cell edge
 from poisson distribution  length is 0.839 nm, will be
  2   (A) 1.25 × 105 A/m
 1  e  1      (B) 5 × 105 A/m
  2!  
(C) 10 × 105 A/m
 4
 1  e 2 1  2      2 (D) 20 × 105 A/m
 2
5 Key: (B)
 1  e 2 .  5   1  2
e Exp: Given data

73. Materials in which the atomic order extends 24


Bohr magnetron  9.27 10 A.m 
2
 
uninterrupted over the entirely of the
Unit cell edge length  0.839 109 m.
specimen; under some circumstances, they
Magnetic moment per Fe2 i on  4 Bohr
may have flat faces and regular geometric magneton.
shapes, are called Number of Fe2 ions per unit cell = 8.
(A) Anisotropy  The saturation magnetization
(B) Crystallography M s  N fe2  4  B
(C) Single crystals 8
  4  9.27  1024
(D) Crystal system  6.839 10  9 3

Key: (C)  5.0  105 A m.

74. Which material possesses the following 76. Consider the following applications of the
properties?
materials:
 Shining white colour with luster
 Bismutch strontium calcium copper oxide
 Soft, malleable and can be drawn into
used as a high temperature
wires
superconductor
 Poor in conductivity and tensile, strength
 Boron carbide used in helicopter and tank
 Used in making alloys with lead and
armour
copper
 Used for fuses and cable sheathing
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22
IES Paper-II [Set-B] |EE|

 Uranium oxide used as fuel in nuclear 78. The temperature at which iron ceases to be
reactors ferromagnetic and becomes paramagnetic is
 Bricks used for construction (A) Curie-Weiss point
The materials used in these applications can (B) Thermo-magnetic point
be classified as (C) Ferro-paramagnetic point
(A) Ceramic (D) Curie point
(B) Constantan Key: (D)
(C) Manganin Exp: The temperature at which Iron ceases to be
(D) Tantalum ferromagnetic and becomes paramagnetic is
Key: (A) curie point.

77. The saturation flux density for Nickel having 79. Fick’s laws refer to
3
density of 8.90 g/cm , atomic number 58.71 (A) Finding whether a semiconductor is n or
and net magnetic moment per atom of 0.6 p type
Bohr magnetons is nearly (B) Diffusion

(A) 0.82 tesla (C) Crystal imperfections


(D) Electrical breakdown
(B) 0.76 tesla
Key: (B)
(C) 0.64 tesla
(D) 0.52 tesla
80. A magnetic field applied perpendicular to the
Key: (C)
direction of motion of a charged particle
Exp: Given,
exerts a force on the particle perpendicular to
Ni(Net magnetic moment per atom) both the magnetic field and the direction of
 0.6 Bohr magnetron. motion of the particle. This phenomenon
24 7
B  9.27 10 A  m , 0  410  M.
2
results in

Density = 8.90 106 g m3  Ni  (A) Flux effect


(B) Hall Effect
 N 8.90  166  6.023  1023
N Ni  Ni A  (C) Magnetic field effect
A Ni 58.71
(D) Field effect
 9.12 10 28
Key: (B)
Ms  0.6 B N Ni  0.6  9.27  1024
 9.12  1028 81. An electric kettle is marked 500W, 230V and
 5.1 105 A m. is found to take 15 minutes to bring 1 kg of
water at 15°C to 100°C. If the specific heat of
Bs  B MS   4107    5.1105   0.64
water is 4200 J/kg/°C, the heat efficiency of
the kettle will be

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23
IES Paper-II [Set-B] |EE|

(A) 87.3% Key: (D)


(B) 83.6% Exp: Silicon carbide used for
(C) 79.3% 1. High temperature heat engines
(D) 75.6% 2. Nuclear fusion reactors
Key: (C) 3. Chemical processing industry
Mass of water  C V  T
Exp: Heat output  4. Aeronautical and space industry
t  in sec  .
T  100  15  85C.
84. The machine used for the preparation of nano
1  4200  85
Heat output 
15  60 particles of alumina is
 396.67J sec.  396.66W (A) Attrition mill
heat output (B) Grinding machine
Heat efficiency     100
heat input (C) Vending machine
396.66
  100  79.33% (D) Welding machine
500
Key: (A)

82. With reference to nano materials, the prefix


85. If the voltage across an element in a circuit is
nano stands for
linearly proportional to the current through it,
(A) Nano centimeter
then it is a
(B) Nanometer
(A) Capacitor
(C) Nano micrometer
(B) Transformer
(D) Nano millimeter
(C) Resistor
Key: (B)
(D) Inductor
Exp: Nanomaterials are characterized by at least 1-
Key: (C)
dimension in the Nanometer range.
Exp: V  IR  only possible resistor 
VR
83. Consider the following applications:
 High temperature heat engines
86. Thevenins’s equivalent circuit consists of
 Nuclear fusion reactors
(A) Current source and series impedance
 Chemical processing industry
(B) Voltage source and series impedance
 Aeronautical and space industry
(C) Voltage source and shunt impedance
Which one of the following materials will be
(D) Current source and shunt impedance
used for these applications?
Key: (B)
(A) Zirconia
Exp:
(B) Alumina  Thevenin's
Vth R th eqivalent
(C) Ceramic circuit
(D) Silicon carbide

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24
IES Paper-II [Set-B] |EE|

87. When the voltage sources are replaced with 90. The impedance of a parallel circuit is
short circuits and current sources are replaced 10  j30   at 1 MHz. The values of circuit
with open circuits, leaving dependent sources
elements will be
in the circuit, the theorem applied is
(A) 10 and 6.4 mH
(A) Superposition
(B) 100 and 4.7 nF
(B) Thevenin
(C) 10 and 4.7 mH
(C) Norton
(D) Millman (D) 100 and 6.4 nF
Key: (B&C) Key: (B)
Exp: Question is ambiguous. As whatever Exp: Given Z  10  j30 
mentioned in the question. it holds good for
thevenin’s as well as Norton’s theorems.
Z R jXC
88. The maximum power is delivered from a
source to a load when the source resistance is
(A) Greater than the held load resistance 1
y ,
(B) Equal to zero z
10  j30 1 1
(C) Less than the load resistance y  
1000 R  jXc
(D) Equal to the load resistance 1000 3
R  100, WC 
10 100
Key: (B) 3
C  4.77nF
Exp: Rs  0 100  106  2

RL R s  should be zero 91. Consider the following statements for a large


Vs to deliver max
power to theload national interconnected grid:
1. Better load frequency control
2. Same total installed capacity can meet
89. A network delivers maximum power to the
lower demands
load resistance when it is
3. Better hydro/thermal/nuclear/ renewable
(A) Greater than Norton’s equivalent
resistance of the network co-ordination and energy conservation

(B) Equal to Thevenin’s equivalent resistance Which of the above statements are correct?
of the network (A) 1 and 3 only
(C) Less than source resistance (B) 1 and 2 only
(D) Less than Norton’s equivalent resistance (C) 2 and 3 only
of the network (D) 1, 2 and 3
Key: (B) Key: (D)
Exp: Condition of maximum power transfer to the Exp: For a large National interconnected grid:
load 1. Requires better load frequency control.
R th  R L
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25
IES Paper-II [Set-B] |EE|

2. Same total installed capacity can meet


lower demands in large national
r
interconnected grid.
R
3. It is better for hydro/thermal/nuclear /
EM
renewable co-ordination and energy
E Min
conservation. Electric field
strength variation
92. A single-phase transformer is rated 110/440V,
Maximum field strength is given as
2.5 kVA. Leakage reactance measured from
V 33000
the low-tension side is 0.06 . The per unit E max  
rn  R/r  0.5n 4
leakage reactance will be
 47608.93V  47600V.
(A) 0.0062/unit
(B) 0.0124/unit 94. Radio influence voltage (RIV) generated on a
(C) 0.0496/unit transmission line conductor surface is not
(D) 0.1983/unit affected by
Key: (B) (A) System voltage
Exp:The per unit leakage reactance = (B) Corona discharges on the conductors
Actual leakage reactance (C) Rain
Base impedance (D) Nearby radio receivers
0.06 Key: (D)
  0.0124 / unit
110 
2
Exp: Radio influence voltage depends on:
2500 → Operating system voltage
→ Corona discharge
93. A concentric cable has a conductor diameter
→ Surface irregularity
of 1 cm and an insulation thickness of 1.5cm.
→ Atmospheric condition (rain, dust etc)
When the cable is subjected to a test pressure
Hence, option (A), (B) & (C) is not possible.
of 33 kV, the maximum field strength will be
nearly 95. Consider the following properties regarding
(A) 41,000 V insulation for cables:
(B) 43,200 V 1. A low specific resistance
(C) 45,400 V 2. High temperature withstand
(D) 47, 600 V 3. High dielectric strength
Key: (C) Which of the above properties of insulation

Exp: Given are correct while using cables?


(A) 1 and 2 only
r  0.5cm( d  1cm)
R  0.5cm  1.5cm (B) 1 and 3 only

 R  r  thickness of insulation  (C) 2 and 3 only

R  2.0cm (D) 1, 2 and 3


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26
IES Paper-II [Set-B] |EE|

Key: (C) Key: (C)


Exp: The insulation of cables should have high Exp: Vacuum interrupter is used for communication
specific resistance to limit the discharging with the aim of achieving high figure of merit
current. Hence statement 1 is wrong. in HVDC circuit breakers

96. Which one of the following faults occurs


more frequently in a power system? 99. Which of the following buses are used to form
(A) Grounded star-delta bus admittance matrix for load flow analysis?
(B) Double line faults 1. Load bus
(C) LLG faults 2. Generator bus
(D) Single line-to grounded (LG) faults 3. Slack bus
Key: (D) (A) 1 and 2 only
Exp: Frequency of occurrence of various type of (B) 1 and 3 only
faults in decreasing order (C) 2 and 3 only
LG  LL  LLG  LLL
 
(D) 1, 2 and 3
Highest Lowest
occurrence frequency Key: (D)
frequency
Exp: Ybus is constructed using all buses. (i.e. load
97. The maximum permissible time of de- bus, generator bus & slack bus).
energization of the faulty circuit is dependent on
(A) Voltage of the system 100. In a 3-phase, 60 Hz, 500 MVA, 15kV, 32-pole
(B) The number of conductors involved hydroelectric generating unit, the values of
(C) Load carried by the faculty circuit
syn and msyn will be nearly
(D) Fault current and its duration
Key: (D) (A) 754 rad/s and 47.6 rad/s

Exp:The maximum permissible time of de- (B) 377 rad/s and 46.7 rad/s

energization of the faulty circuit is dependent (C) 377 rad/s and 23.6 rad/s

on fault current & its duration (D) 754 rad/s and 23.6 rad/s

Permissible time = f(fault current, duration of Key: (C)

persistency) Exp: Given data, 60Hz, 500MVA, 15KV, 32 pole


hydroelectric generating unit.
98. Which one of the following is used for Wsyn  electrical   2f  2  60
communication with the aim of achieving  120  3.14 377rad/sec
high figure of merit in HVDC circuit Wmsyn  mechanical 
breakers? 2N 2  120  f 4f
  
(A) Oil interrupter 60 60P P
4  60
(B) Air interrupter  23.56 rad/sec
35
(C) Vacuum interrupter
Hence C is correct.
(D) SF6 interrupter
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27
IES Paper-II [Set-B] |EE|

101. The methods adopted for improving the 103. Which one of the following is not required for
steady state stability of power system are power diode?
1. Quick response excitation system (A) High speed operation
2. Higher excitation voltages (B) Fast communication
3. Maximum power transfer by use of series (C) Small recovery time
capacitor or reactor
(D) Low on-state voltage drop
(A) 1 and 2 only
Key: (B)
(B) 1 and 3 only
Exp: For power diode, high speed operation, small
(C) 2 and 3 only
recovery time and low-on state voltage drop
(D) 1, 2 and 3
required but not fast communication
Key: (C)
Exp: Quick response excitation system improves
104. The reverse recovery time of a diode is
transient stability not steady state stability. t rr  3 s and the rate of fall of the diode
 Pmax  Excitation  Statement 2 is correct di
current is  30 A s. The storage charge
1 dt
 Pmax   Statement 3 is
 XL  XC    QRR and the peak inverse current I RR will be
respectively
correct (A) 135C and 90A
(B) 270C and 90A
102. The HVDC system uses
(C) 270C and 60 A
(A) Rectifier station at sending end and
(D) 135C and 60 A
inverter station at receiving end
Key: (A)
(B) Inverter station at sending as well as at
 di 
the receiving end Exp: I RR    .t rr   30A   106  3 106  90A
 dt 
(C) Rectifier station at sending end as well as
1 di 2 1
at the receiving end Stored charge  Q rr  t rr   30  9
2 dt 2
(D) Inverter station at sending end and 15  9 135c
rectifier station at receiving end Hence (A) is correct.
Key: (A)
HVDC link
Exp: 105. The ig  Vg characteristics of a thyristor is a

straight line passing through origin with a


gradient of 2.5 103. If Pg  0.015 watt, the
AC AC
value of gate voltage will be nearly
AC to DC DC to AC (A) 5.0V
Rectifier required Inverter required (B) 6.1V
at sending end at receiving end
(C) 7.5V
(D) 8.5V

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28
IES Paper-II [Set-B] |EE|

Key: (B) 2. Full bridge uses 4-power switches instead


Exp: Given of 2, as in the double bridge.
Vg 3. Output power of a full bridge is twice that
 2.5  103 , or Vg  2500I g
Ig of a half bridge with the same input
Pg  Vg Ig   2500Ig  Ig2 voltage and current.
Which of the above statements are correct?
0.015 0.015
Ig2   Ig   2.449  10-3 /m (A) 1, 2 and 3
2500 2500
 Vg  2500  2.449  103 (B) 1 and 2 only

 6.123V  gate voltage  (C) 1 and 3 only


(D) 2 and 3 only
Key: (D)
106. A single-phase 220V, 1kW heater is
connected to half wave controlled rectifier and
108. A single-phase fully controlled bridge
is fed from a 220V, 50 Hz ac supply. When
converter is connected with RLE load where
the firing angle   90, the power absorbed
R  5, L  4 mH and E  50 V. This converter
by the heater will be nearly
(A) 1000W circuit is supplied form 220 V, 50 Hz ac

(B) 750W supply. When the firing angle is 60°, the

(C) 500W average value of the load current will be

(D) 250 W, nearly


(A) 12.2A
Key: (D)
Exp: Heater rating 1kW at 220V (B) 9.8A
(C) 6.4 A
V2 220  220 22  22
R     (D) 4.2 A
P 1000 10
Key: (B)
Power delivered to the load
2
Exp: Assuming load current is constant
1  V  
1/ 2

  M     for   90  2Vm


cos   E
R  2  2  Vo  E
  Io   
2 R R
 220 2   1/ 2 
    2  220  2
 2  2   220  220  2   cos 60  50
     9.806A
R 4R 2 5
220  220  10 1000
   250W
4  22  22 4 109. Consider the following statements regarding
ac drives:
107. When we compare the half bridge converter 1. For the same kW rating, ac motors are
and full bridge converter 20% to 40% light weight as compared to
1. The maximum collector current of a full dc motors.
bridge is only double that of the half 2. The ac motors are more expensive as
bridge. compared to same kW rating dc motors.

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29
IES Paper-II [Set-B] |EE|

3. The ac motors have low maintenance as 2. SMPS has high ripple in output voltage
compared to dc motors. and its regulation is poor.
Which of the above statements are correct? 3. The output voltage of SMPS is less sensitive
(A) 1 and 2 only with respect to input voltage variation.
(B) 2 and 3 only Which of the above statements are correct?
(C) 1 and 3 only
(A) 1 and 3 only
(D) 1, 2 and 3
(B) 2 and 3 only
Key: (C)
(C) 1 and 2 only
Exp: The ac motors are less expensive as
(D) 1, 2 and 3
compared to same kw rating dc motors.
Key: (D)
Hence statement 2 is wrong.
Exp: 1. SMPS generates both the electromagnetic
110. A 3-phase induction motor drives a blower and radio frequency interference due to
where load torque is directly proportional to high switching frequency.
speed squared. If the motor operates at 1450 2. The SMPS has higher output ripple and
rpm, the maximum current in terms of rated its regulation is worse.
current will be nearly 3. SMPS also cause harmonic distortion.
(A) 2.2 Hence statement 1, 2 and 3 are correct.
(B) 3.4 Statements 1 and 2 are drawbacks of SMPS.
(C) 4.6
Statement 3 is advantage of SMPS
(D) 6.8
Key: (A)
112. Consider the following features with respect
Exp: For N  1450 rpm,
to the flyback converters:
1500  1450
s  S  0.033
1500 1. It is used mostly in application below
100W.
The slip at which T2 is maximum for
2. It is widely used for high-output voltage.
blower type load  TL  2  is S 
1
3 3. It has low cost and is simple.
1 2 Which of the above statements are correct?

I 2 max 3 3
 (A) 1, 2 and 3
I 2  rated  0.033  1  0.033
(B) 1 and 2 only
  I 2 max  2.2I 2rated
(C) 1 and 3 only
(D) 2 and 3 only
111. Consider the following statements:
Key: (C)
1. SMPS generates both the electromagnetic
Exp: Flyback converters → low power rating
and radio frequency interference due to
→ low voltage rating
high switching frequency.
Hence statement 2 is wrong → Low cost and
simple

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30
IES Paper-II [Set-B] |EE|

113. Consider the following statements regarding Directions:


the function of dc-dc converter in a dc motor: Each of the next 6 (10) items consists of
1. It acts as a regenerative brake. two statements, one labelled as the 'Statement
2. It controls the speed of motor. (I)' and the other as 'Statement (II)’.
3. It controls the armature voltage of a dc You are to examine these two statements
motor. carefully and select the answers to these items
Which of the above statements are correct? using the codes given below:
(A) 1 and 2 only Codes:
(B) 1 and 3 only (A) Both, Statement (I) and Statement (II)
(C) 2 and 3 only are individually true and Statement (II)
(D) 1, 2 and 3 is the correct explanation of Statement (I)
Key: (D) (B) Both Statement (I) and Statement (II)
Exp: DC-DC converter can be used for are individually true but Statement (II)
regenerative braking is not the correct explanation of
Statement (I)
speed control of motor
(C) Statement (I) is true but Statement (II) is
Control of armature voltage false
(D) Statement (I) is false but Statement (II) is
114. The power supplies which are used true
extensively in industrial applications are
required to meet 115. Statement I: Soft iron does not retain
1. Isolation between the source and the load magnetism permanently.
2. High conversion efficiency Statement II: Soft iron has no retentivity.
3. Low power density for reduction of size Key: (C)
and weight Exp: Soft magnetic materials can be easily magnetized
4. Controlled direction of power flow and demagnetized. Soft magnetic material follow
Which of the above specifications are correct? rapid switching of magnetization to the applied
(A) 1, 2 and 3 only AC field. It has low retentivity & coercivity.
(B) 1, 3 and 4 only Hence statement II is incorrect.
(C) 1, 2 and 4 only
(D) 2, 3 and 4 only 116. Statement I: Reaction turbines are generally
Key: (C) used for sites with high head and low flow.
Exp: Statement 3 is wrong. High power density Statement II: Kaplan and Francis turbines are
for reduction of size and weight. reaction turbines.

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31
IES Paper-II [Set-B] |EE|

Key: (D) transformers core, whereas, hard magnetic


Exp: Reaction turbines are generally used for sites materials both metallic and ceramic are used
low head and high flow. Hence statement I is for making permanent magnets.
correct. Statement II: Magnetic materials, both
metallic and ceramic are classified as soft or
117. Statement I: One can formulate problems hard according to the magnetic hysteresis loop
more efficiently in a high-level language and being narrow or broad.
need not have a precise knowledge of the Key: (A)
architecture of the computer. Exp: Soft-magnetic material: These materials can
Statement II: High level languages permit be easily magnetized and demagnetized and
programmers to describe tasks in a form follow rapid switching of magnetization to the
which is problem oriented than computer applied AC field. The hysteresis loop is
oriented. narrow and hence used in transformer core.
Key: (A) Example fe  Ni alloy
ferrites etc.
118. Statement I: Sign magnitude representation Hard magnetic material: These materials
is generally used in implementing the integer are difficult to demagnetize. They retain their
portion of the ALU. magnetization even after the removal of field.
Statement II: In sign magnitude representation These are also known as permanent magnet
there are two representations of 0. material.
Key: (D) Hence statement-I is correct & statement-II is
correct explanation.
119. Statement I: When a non-linear resistor, in
series with a linear resistor, both being non- 121. The defining equations for V1 and V2
inductive, is connected to a voltage source, analyzing a two-port network in terms of its
the current in the circuit cannot be determined impedance parameters are respectively
by using ohm’s law. (A) Z12 I1  Z12 I2 and Z21I1  Z21I2
Statement II: If the current-voltage
(B) Z11I1  Z12 I12 and Z21I1  Z22 I2
characteristic of the non-linear resistor is
(C) Z21I1  Z21I2 and Z12 I1  Z12 I2
known, the current-voltage characteristic of
the series circuit can be obtained by graphical (D) Z12 I1  Z12 I2and Z22 I1  Z22 I2

solutions. Key: (B)


Key: (B) Exp: Impedance parameters equation, written as
V1  Z11I1  Z12 I2 ... 1
120. Statement I: Soft magnetic materials, both V2  Z21I1  Z22 I2 ...  2 
metallic and ceramic are used for making Hence (B)

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32
IES Paper-II [Set-B] |EE|

122. A filter that allows high and low frequencies 500  103
Exp: I L   400.937A
to pass but attenuates any signal with a 3  1000  0.8  0.9
frequency between two corner frequencies is a IL  in alternator   401A
(A) Notch filter IL 401
IM    231.5A
(B) Band pass filter 3 3
IL
(C) Band stop filter
(D) Multiband filter
IM.L
Key: (C) IL
Exp:
stop band
gain
Henceit is IL
Band stop filter
125. Consider the following statements:
f f 1. Mutual inductance describes the voltage
low pass high pass induced at the ends of a coil due to the
magnetic field generated by a second coil.
123. When a number of two-port networks are 2. The dot convention allows a sign to be

cascaded then assigned to the voltage induced due to

(A) z-parameters are added up mutual inductance term.


(B) y-parameters are added up 3. The coupling coefficient is given by
(C) h-parameters are multiplied M
k ..
(D) ABCD-parameters are multiplied L1  L2

Key: (D) Which of the above statements are correct?


Exp: For cascaded Network, (ABCD) – parameters (A) 1, 2 and 3
are multiplied. (B) 1 and 3 only
(C) 1 and 2 only
124. A 3-phase star-connected 1000 volt alternator (D) 2 and 3 only
supplies power to a 500 kW delta-connected Key: (C)
induction motor. If the motor power factor is Exp: Statement 3 is wrong
0.8 lagging and its efficiency 0.9, then the Coupling coefficient is given by
current in each alternator and motor phase M
K
respectively are nearly L1L2
(A) 321 A and 231.5A
(B) 401 A and 231.5 A 126. Consider the following statements:
(C) 321 A and 185.4 A 1. The rules for series and parallel
(D) 401 A and 185.4 A combinations of capacitors are opposite
Key: (B) to those for resistors.
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33
IES Paper-II [Set-B] |EE|

2. The rules for series and parallel Exp:


combinations of inductors are same as
those for resistors. swamping resistance
R sh made by mangamin
3. An inductor is a short circuit to dc becauseits temperature
coefficient is low
currents.
Which of the above statements are correct? ammeter

(A) 1 and 2 only


(B) 1 and 3 only 129. In a PMMC instrument, the swamping resistor
(C) 2 and 3 only is used to
(D) 1, 2 and 3 (A) Increase the damping of the instrument
Key: (D) (B) Reduce the current within safe limits
(C) Compensate for temperature variations
127. The standard resistor is a coil of wire of some (D) Increase the full-scale sensitivity
alloy having the properties of Key: (C)
(A) Low electrical resistivity and high
temperature coefficient of resistance 130. A moving coil ammeter has a fixed shunt of
(B) High electrical resistivity and high 0.02 . With a coil resistance of R  1000
temperature coefficient of resistance and a potential difference of 500 mV across it,
(C) Low electrical resistivity and low full scale deflection is obtained. The current
temperature coefficient of resistance through the moving coil to give full scale
(D) High electrical resistivity and low deflection will be
temperature coefficient of resistance (A) 25A
Key: (D) (B) 0.5 102 A
Exp:Standard resistor must have high electrical
(C) 0.25 103 A
resistivity and low temperature coefficient.
(D) 0.5 103 A
Key: (D)
128. Which one of the following material is used
Exp: Given data,
for the swamping resistance of moving coil
R sh 0.02, R m 1000, and V500mV.
instruments?
I Ifsd
(A) Carbon Ish
(B) Manganin R sh Rm 500mv

(C) Silver
Current through the moving coil to give full
(D) Brass
scale deflection =
Key: (B)

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34
IES Paper-II [Set-B] |EE|

500  103 I m2
 0.5  103 A.
1000
Current through the shunt R Se 2180
250
500  103
=  25A.
0.02 R m 369

131. A moving iron instrument has full scale 250


Now  I m2   98.07mA
current of 100 mA. It is converted into a 250 369  2180
I I
V voltmeter by using a series resistance made %Error  m2 m1
I m1
of a material having negligible resistance

 98.07  100   100   1.93%
temperature coefficient. The meter has a
100
resistance of 320  at 20°C. After carrying a
Hence (B) is correct
steady current of 100mA for a long time, the
resistance of the coil increases to 369  due to 132. There will be serious errors if power factor of
self heating. When a voltage of 250V is non-sinusoidal waveform is measured by
applied continuously, the error due to self- electrodynamometer power factor meter. This
heating will be nearly is true for
(A) –1.1% (A) Single-phase meters alone
(B) –1.9% (B) 3-phase meters only
(C) –2.5% (C) Both Single-phase meters and 3-phase
(D) –3.3% meters
Key: (B) (D) 3-Phase meters with balanced loads
Exp: Total resistance Key: (A)
250
 R se  R m    2500 Exp: The electrodynamometer type 3 phase power
100 103
factor meter, the meter gives indications
 R se  2500  R m  2500  320  2180.
which are independent of waveform and
After carrying a steady current of 100mA, frequency of supply because the currents in
meter resistance has changed to 369Ω. the two moving coils are equally affected by
 R se  R m  2180  369  2549 any change of frequency.
100mA
However, in single phase power factor meter,
I m1
the instrument is used at the frequency for
R Se
250V which it is designed. Otherwise, it gives
serious error as the reactance of the choke coil
R m 320
will change at different frequency.

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35
IES Paper-II [Set-B] |EE|

133. The ramp type digital voltmeter can measure (C) Allows the horizontal sweep to start prior
accurately with to vertical deflection
(A) A positive going ramp voltage only (D) Delays the generation of sweep voltage
(B) A negative or positive going linear ramp Key: (C)

voltage Exp: Vertical delay live in CRO allows the


horizontal sweep to start prior to vertical
(C) A negative going ramp voltage only
deflection.
(D) An asymptotic ramp voltage only
Key: (B)
136. A 0-150 V voltmeter has a guaranteed
Exp: The ramp type digital voltmeter can measure
accuracy of 1% full scale reading. The voltage
accurately with negative & positive going
measured by this instrument is 83 V. The
linear ramp voltage. limiting error will be nearly
(A) 1.2%
134. The self-capacitance of a coil is measured by (B) 1.8%
the resonating capacitor. The measurement (C) 2.4%
gives the value of tuning capacitor as (D) 3.2%
C1  460 pF at a frequency, f1  2MHz. The Key: (B)
second measurement at f 2  4 MHz yields a %GA  fullscale
Exp: % LE 
new value of tuning capacitor, C2  100 pF. Reading of instrument
%1  150
The distributed capacitance Cd will be   1.8%
83
(A) 10 pF
(B) 20 pF 137. The variations in the measured quantity due to
(C) 30 pF sensitivity of transducer to any plane other
(D) 40 pF than the require plane is
Key: (B) (A) Cross sensitivity
Exp: Given data, (B) Sensitivity
C1  460pf , f1  2mHz, f 2  4mHz (C) Interference
f
C2  100pf , n  2  2. (D) Distributed sensitivity
f1
Key: (A)
C  n 2 C2 460  4  100 60
Cd  1 2    20pf Exp: Sometimes situation may occur where the
n 1 4 1 3
equipment is very sensitive to the plane
perpendicular to the required plane and we
135. Vertical delay line in CRO
have to abandon that equipment due to
(A) Gives proper time for thermionic
erroneous result. The variation in the
emission of electrons
measured quantity due to sensitivity of
(B) Delays the signal voltage by 200 ns
transducer to any plane other than the required
plane is called cross-sensitivity.

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36
IES Paper-II [Set-B] |EE|

138. A resistance strain gauge with a gauge factor 140. The decimal equivalent of binary number
of 2 is fastened to a steel member subjected to 1001.101 is
a stress of 1050 kg cm2 . The modulus of (A) 9.750
(B) 9.625
elasticity of steel is 2.1106 kg cm2 . The
(C) 10.750
change in resistance R of the strain gauge
(D) 10.625
element due to the applied stress will be
Key: (B)
(A) 0.1%
Exp: Given binary number = 1001.101
(B) 0.2%
 1  23  0  22  0  21 1  20  .
(C) 0.3%
(D) 0.4% 1 2 1
 0  22 1 23 
1 1
Key: (A)   8  1 .   
2 8
Exp: Given data, G f  2
 9. 0.5  0.125   9.625  10
Stress  1050kg / cm 2 ,
141. Convert decimal 41.6875 into equivalent
R
ysteel  2.1 10 kg/cm ,
6
 ? (in %)
2
binary:
R
R / R R  (A) 100101.1011
Gf    100  100  G f 
 /  R  (B) 100101.1101
1
 100  2   1050  0.1% (C) 101001.1011
2.1 106
(D) 101001.1101
Key: (C)
139. In which one of the following classes of
computers, is the relationship between
Exp: 2 41 1  4110  1010012
2 20 0
architecture and organization very close?
2 10 0
(A) Microcomputers 2 5 1
(B) Mini computers 2 2 0
(C) Mainframe computers 1
(D) Super computers 0.6875  2  1.375  1
Key: (A) 0.0.375  2  0.75  0
Exp: Computer organization is about what the 0.75  2  1.5 1
different functional units of computer are and 0.5  2  1 1
how they are corrected with each other.  0.687510  10112
Computer architecture is about details how Hence  41.687510  101001.10112
each unit is implemented. Micro computer are
simple small computer where everything is
142. The Central Processing Unit (CPU) consists of
implemented on a single board.
(A) ALU and Control unit only
(B) ALU, Control unit and Registers only
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37
IES Paper-II [Set-B] |EE|

(C) ALU, Control unit and system bus only Key: (B)
(D) ALU, Control unit, Registers and Internal Exp: Seek Time: Seek time is the time required to
bus move the disk arm to the required track. It
Key: (D) turns out that this is a difficult quantity to pin
Exp: CPU is consists of Arithmetic logic unit, down. The seek time consists of two key
Control unit, General purpose registers, flag components: the initial startup time, and the
registers and Internal bus correcting all units. time taken to traverse the tracks that have to
be crossed once the access arm is up to speed.
143. When enough total memory space exists to Unfortunately, the traversal time is not a
satisfy a request, but it is not contiguous, then linear function of the number of tracks, but
this problem is known as includes a settling time (time after positioning
(A) Internal Fragmentation the head over the target track until track
(B) External Fragmentation identification is confirmed).
(C) Overlays Rotational Delay: half of the one rotation
(D) Partitioning time.
Transfer Time: The transfer time to or
Key: (B)
from the disk depends on the rotation speed
Exp: When enough total memory space exists to of the disk in the following fashion:
satisfy a request, but it is not contiguous, then b
T
this problem is known as external rN
Where
fragmentation. When requested memory is
T  transfer time
less than a single page size then this problem
b  number of bytes to be transferred
is known as internal fragmentation.
N = number of bytes on a track
r = rotation speed, in revolution per second
144. The total average read or write time Ttotal is Thus the total average access time can be
expressed as
1 b
(A) Ts  
2r N
1 b 1 b
(B) Ts   Ta  Ts  
2r rN 2r rN
Ts b
(C) 
rN N Where TS is the average seek time. Note
b that on a zoned drive, the number of bytes
(D) Ts  2r 
rN per track is variable , complicating the
where, calculation.
Ts  average seek time
145. If a cache has 64-byte cache lines, how long
b  number of bytes to be transferred
does it take to fetch a cache line if the main
N = number of bytes on a track
memory takes 20 cycles to respond to each
r  rotation speed, in revolutions per second

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38
IES Paper-II [Set-B] |EE|

memory request and returns 2 bytes of data in 4. More susceptible to physical shock and
response to each request? vibration
(A) 980 cycles (A) 2 and 3 only
(B) 640 cycles (B) 2 and 4 only
(C) 320 cycles (C) 1 and 3 only
(D) 160 cycles (D) 1 and 4 only
Key: (B) Key: (C)
Exp: The main memory takes 20 cycles to respond Exp: SSD can be thought of as an oversized and
to each memory request and returns 2 bytes of more sophisticated version of the humble USB
data. memory stick. Like a memory stick, there are no
The number of request to access 64-bytes of moving parts to an SSD. Rather, information is
64 stored in microchips. Conversely, a hard disk
the cache is =  32
2 drive uses a mechanical arm with a read/write
Each request takes 20 cycles hence 32 request head to move around and read information from
will take = 32  20  640 cycles the right location on a storage platter. That’s
leads to high performance and lower access
146. Which of the following statements are correct time.
about SRAM?
1. It provides faster access as compared to 148. The decimal value of signed binary number
DRAM. 11101000 expressed in 1’s complement is
2. It is cheaper than DRAM. (A) -223
3. It is more expensive than DRAM. (B) -184
4. It has higher bit density than DRAM. (C) -104
(A) 1 and 4 only. (D) -23
(B) 1 and 3 only. Key: (D)
(C) 1, 3 and 4 only Exp: Given
(D) 2 and 4 only 11101000
Key: (B)
0 0 010111  1'  Complement of
.
given binary number
147. Features of solid state drives (SSDs) are 
1. High-performance in input/output  2310  Magnitude.
MSB of given Binary number is 1 hence it
operations per second
is –Ve number  2310.
2. More power consumption than
comparable size HDDs
3. Lower access times and latency rates

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39
IES Paper-II [Set-B] |EE|

149. The memory management function of virtual Key: (D)


memory includes Exp: Implied Addressing Mode: Implied
1. Space allocation Addressing Mode also known as "Implicit"
2. Program relocation or "Inherent" addressing mode is the
3. Program execution addressing mode in which, no
4. Code sharing operand(register or memory location or data)
(A) 1, 2 and 3 only is specified in the instruction.
(B) 1, 2 and 4 only The Complement Accumulator (CMA)
(C) 1, 3 and 4 only instruction provides a 1's complement of the
(D) 2, 3 and 4 only 8 bits in the A register, i.e the 1's are set to 0's
Key: (B) and the 0's are set to 1's. No operand is
Exp:Memory management unit responsible for supplied.
memory allocation, relocation of a RET instruction issued within the called

program if required and if there exists a procedure to resume execution flow at the
instruction following the call. The optional
memory shared between two processes.
numeric (16- or 32-bit) parameter to ret
150. Which of the following instructions of 8085 specifies the number of stack bytes or words
are the examples of implied addressing? to be released after the return address is
1. CMA popped from the stack.
2. IN byte IN byte: In this instruction we need to provide
3. RET address of the Input/output unit from where
(A) 1, 2 and 3 input is taken hence not an implied address.
(B) 1 and 2 only
(C) 2 and 3 only
(D) 1 and 3 only

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40

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