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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY • Dynamic dV/dt rating
VDS (V) -200 • Repetitive avalanche rated Available
RDS(on) max. () VGS = -10 V 0.80 • P-channel
Qg max. (nC) 29 • Fast switching Available
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
S ruggedized device design, low on-resistance and
D D
G cost-effectiveness.
P-Channel MOSFET
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
IRF9630PbF
Lead (Pb)-free
SiHF9630-E3
IRF9630
SnPb
SiHF9630
- 7.0 V
- 6.0 V 2.0
(Normalized)
- 5.5 V
- 5.0 V
- 4.5 V 1.5
Bottom - 4.5 V
100
1.0
0.5
20 µs Pulse Width
TC = 25 °C
10-1 0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91084_01 - VDS, Drain-to-Source Voltage (V) 91084_04 TJ, Junction Temperature (°C)
1200
VGS = 0 V, f = 1 MHz
VGS Ciss = Cgs + Cgd, Cds Shorted
Top - 15 V 1000 Crss = Cgd
101 - 10 V Coss = Cds + Cgd
Capacitance (pF)
- 8.0 V
- ID, Drain Current (A)
800
- 7.0 V Ciss
- 6.0 V
- 5.5 V - 4.5 V 600
- 5.0 V
Bottom - 4.5 V
100 400
Coss
200
Crss
20 µs Pulse Width
0
TC = 150 °C
10-1 100 101
10-1 100 101
91084_05 - VDS, Drain-to-Source Voltage (V)
91084_02 - VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = - 6.5 A
- VGS, Gate-to-Source Voltage (V)
VDS = - 160 V
16
- ID, Drain Current (A)
100
4
20 µs Pulse Width For test circuit
VDS = - 50 V see figure 13
0
4 5 6 7 8 9 10 0 5 10 15 20 25 30
91084_03 - VGS, Gate-to-Source Voltage (V) 91084_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
7.0
- ISD, Reverse Drain Current (A)
101 6.0
100 3.0
2.0
1.0
VGS = 0 V
10-1 0.0
0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150
91084_07 - VSD, Source-to-Drain Voltage (V) 91084_09 TC, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
103 VDS
Operation in this area limited
5
by RDS(on)
2
VGS
D.U.T.
- ID, Drain Current (A)
102 RG
+
5 - VDD
2
10 µs
- 10 V
10 100 µs
Pulse width ≤ 1 µs
5
Duty factor ≤ 0.1 %
1 ms
2
10
Thermal Response (ZthJC)
1 D = 0.5
0.2 PDM
0.1
0.1 0.05 t1
0.02 t2
0.01 Single Pulse Notes:
(Thermal Response) 1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10
L IAS
VDS
Vary tp to obtain
required IAS
VDS
RG D.U.T
-
+ V DD
IAS VDD
- 10 V tp
tp 0.01 Ω A
VDS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
1200
ID
EAS, Single Pulse Energy (mJ)
Top - 2.9 A
1000 - 4.1 A
Bottom - 6.5 A
800
600
400
200
VDD = - 50 V
0
25 50 75 100 125 150
Current regulator
Same type as D.U.T.
QG 50 kΩ
- 10 V 12 V 0.2 µF
0.3 µF
QGS QGD -
D.U.T. + VDS
VG
VGS
- 3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13c - Gate Charge Test Circuit
- - +
Rg • dV/dt controlled by Rg +
• ISD controlled by duty factor “D” VDD
• D.U.T. - device under test -
Note
• Compliment N-Channel of D.U.T. for driver
VGS = - 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE Xi’an
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