EMI Shielding Theory

By George Kunkel, the current crosses a seam in

CEO, Spira Manufacturing Corp. the barrier (created by main-
tenance covers, etc.), a volt-
There are two ways of approaching the theory of shielding. These age is created across the
are by the use of circuit theory and by the use of field theory. The seam, where the value of the
EMC industry uses a field theory approach to shielding theory using voltage is equal to the cur-
abstract mathematical modeling techniques to yield a value of merit rent times the impedance of
classified as "shielding effectiveness". Shielding effectiveness is then the seam. The seam then
used as a measurement to gauge the attenuation of an EM field becomes a radiating antenna
through shielding barrier material. where the impedance and Figure 2
The problem with the use of shielding effectiveness is that there pattern is similar to that of a
can be a significant differential between the attenuation of the elec- slot antenna. EMI gaskets are used to reduce the impedance of the
tric E fields, magnetic H fields, and power, where the difference can seam and subsequent power radiating from the seam.
exceed 100 dB. The actual difference will vary as a function of vari- Generation and Propagation of EM Fields
ables associated with specific applications where the literature on the The undergraduate courses on EM theory introduce the concept of
shielding of radiated EM fields does not address these conditions. an EM field by driving a pair of parallel plates with an AC voltage
The result is a significant confusion factor in the selection of shield- source as illustrated in Figure 3. The current that flows through the
ing barrier material, facing design engineers who are required to wire comes from the top plate and is stored in the bottom plate. The
meet EMC radiated emission and susceptibility requirements. over-presence of the electrons on the bottom plate is illustrated by ⊕
The circuit theory approach (included herein) employs mathemat- and the absence of electrons on the top plate and is illustrated by \.
ical modeling techniques consistent with college course work and This creates an electromagnetic field which is illustrated in Figure 4.
yields a predicted field strength at any given distance from the The field consisting of the straight lines is classified as a displace-
shielding barrier material. The results can also be used to predict the ment field and is in amperes per meter squared. The magnitude of
shielding of a seam or gasketed joint in the barrier material (or the E field is equal to the volt-
enclosure). The circuit theory approach given below examines the age differential between the
field as it penetrates a barrier and yields a value of the field as it plates divided by the distance
exits the barrier. between the plates in meters.
Introduction The resultant E field is in
A radiated electromagnetic (EM) force field is generated by the volts/meter (e.g., a set of paral-
action of driving a current through a wire. An example is that of lel plates is used for performing
Figure 1 which represents a sending/receiver circuit on a PC card. E field susceptibility testing to Figure 3
The wire (or PC card trace) acts as a transmitting antenna as an MIL-STD-461/462).
emitter of EM interference As is illustrated in Figure 4, the lines of flux in the center of the
and as a receptor with regard plates are straight and flow from the bottom to the top plate. At the
to EM susceptibility. A com- edges they bow out, where the fields or lines of flux repel each other,
mon method of reducing (or forcing the bowing. The field that bows out represents a radiated EM
eliminating) the possibility field. The radiated EM field emanating from the trace of Figure 1 is
of the PC trace being an similar to the radiated EM field illustrated in Figure 4. The electric
emitter or receptor is by the Figure 1 "E" field is tangent to the lines of force as illustrated in Figure 4. The
use of a shielding barrier. magnetic "H" field is a field perpendicular to the lines of force and
When an EM force field is impinged on a metallic (conductive) points out of the paper.
shielding barrier, currents are caused to flow in the barrier. As the The set of plates as illus-
field penetrates the barrier, the current is attenuated (i.e., reduced in trated in Figure 4 produce a
amplitude as illustrated in Figure 2) by a force called skin effect. field similar to that of the
The power of the field as it leaves the barrier is approximately equal PC card trace of Figure 1
to the current squared times the impedance of the barrier, and is in (and of an electric dipole
watts per meter squared. antenna). If the transmitted
As we learned above, currents flow in the shielding barrier as a power is known, the field
function of the radiated field being impinged on the barrier. When strength can be calculated
Figure 4

Reprinted from the fall 2003 issue of Equipment Protection Magazine

©Webcom Communications Corp., 7355 E. Orchard Road, Suite 100, Greenwood Village, CO 80111, U.S.A, Phone 720-528-3770
using the dipole antenna equation, i.e., R1, R2, and RT are in meters
PR ≈ 1.6 Pt / 4πR²
Where PR = Field strength at distance R (w/m²) The impedance of the field will
PT = Transmitted power (watts) vary from a low impedance (imped-
ance of the barrier) to 377 ohms when
R = Distance from radiating source (m)
the distance R2 ≥ λ/2π. The value of
And power equation (poynting vector):
E x H = PR E and H can be closely approximated
at a distance R2 when R2 ≥ λ/2π.
E / H = 377λ / 2πR R < λ/2π (ohms)
= 377 R > λ/2π using the following equations:
Figure 6
And λ = 3x108/f (m)
If the power is not known, the value of the electric field can be ER2 • HR2 = PR2 (w/m)
approximated using the following equation: ER2 / HR2 = 377 ohms
E ≈ e /πR When R2 < λ/2π the value of E and H can be estimated using the
E = Electric field strength (v/m)
e = Voltage across plates following equations:
H ≈ 2πRE / 377λ R < λ/2π (A/m) ER2 • HR2 ≈ PR2 (w/m)
= E / 377 R > λ/2π ER2 / HR2 = 2πR2(377) / λ (ohms)
Suppression (Shielding) of EM Fields And λ = 3 x 108 /f (m)
When we place a shielding barrier in the path of the EM field, Gasketed Joint Shielding
the force of the field causes current to flow in the barrier. As is illus- When a radiated EM force field is impinged on a metallic shield-
trated in Figure 5, the excess electrons in the bottom plate create a ing barrier, a current (surface
force on the electrons in the barrier. This force causes the electrons current density in amperes per
to flow away from the point of contact. In a similar manner, the lack meter) is generated in the materi-
of electrons on the upper plate will create an excess of electrons on al. When the current flows across
the barrier at the upper point of con- a gasketed maintenance cover as
tact. This current flow in the barrier illustrated in Figure 7, a voltage
is called the "surface current densi- e is generated across the gasket.
ty" (JS) in amperes/meter, and is The value of e is equal to the
approximately equal to the H field current in amperes/meter times
the impedance of the joint (trans- Figure 7
incident on the barrier when the field
is perpendicular to the barrier. The fer impedance in ohm-meters).
current flowing in the barrier is JS = Current due to Field Striking Barrier
attenuated by the skin effect. E = Voltage Across Gasket
The current on the transmitted Figure 5 = JSZT
side is equal to JSI e-d/δ (i.e., the cur-
ZT = Transfer Impedance of Gasketed Joint (ohm-m)
rent on the incident side attenuated by skin effect). The impedance
of the field emanating from the barrier is equal to the impedance of
The EM force field illustrated in Figure 7 is generated by the
the barrier. The values of ET and HT are as illustrated in Figure 5
voltage across the gap and has the characteristics of a low imped-
and are as follows. ance slot antenna.
HT = JSI e-d/δ The radiated power can be estimated from the example of Figure
ET = HT ZB 7 as follows:
where ET = Transmitted E field (V/m) ET ≈ e / πR = JS ZT / πR
HT = Transmitted H field (A/m) HT ≈ ET λ /377πR R < λ/2π
d = Thickness of barrier (m) = ET / 377 R ≥ λ/2π
δ = Skin depth (m) About Spira Manufacturing Corporation
ZB = impedance of barrier (ohms) Spira Manufacturing Corporation has been serving the EMC
ZB = (1+ j) / σδ (1- e-d/δ ) community with quality engineered Electromagnetic Interference
(EMI) and Radio-Frequency Interference (RFI) shielding products
Field Strength Through Shield for over twenty-five years.
From antenna theory we know that the power from an antenna is Founded in 1978, Spira's commitment has always been to manu-
reduced as the square of the distance from its source. Shielding the- facture quality products to ensure that you, the customer, will be
ory proposes that the field as it passes through a barrier is attenuated able to make an informed decision and choose the best gasket for
but not changed with regard to direction. As such, the loss of power your design. Each of the products manufactured by Spira fills a very
is a function of the distance from the original source of the field as specific need in the market, not found in any other EMI gasket.
illustrated in Figure 6.
The power at a distance R2 from the barrier is equal to the following: Spira Manufacturing Corporation
PR2 = PT (R1/RT)² 12721 Saticoy Street South
Where PR = Field strength at distance R2 (w/m²) North Hollywood, CA 91605
PT = Transmitted power (watts) Tel: (818) 764-8222
Fax: (818) 764-9880
≈ ET • HT www.spira-emi.com
info@spira-emi.com
Reprinted from the fall 2003 issue of Equipment Protection Magazine
©Webcom Communications Corp., 7355 E. Orchard Road, Suite 100, Greenwood Village, CO 80111, U.S.A, Phone 720-528-3770