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ABSTRACT EXPERIMENTS
We proposed a low cost solution of flexible The Argon glow discharge plasma was generated in a
amorphous silicon solar cells on Polyethylene standard PECVD system at plasma excitation frequency of
terephthalate(PET) polymer substrates deposited at low 13.56MHz. ITO films as front contact layers were prepared
temperatures. PET films were firstly annealed both in the by reactive thermal deposition technique on PET
air and in vacuum at different temperatures, and the substrates at the substrate temperature of 140°C. The
properties of PET films after annealing were evaluated. structure of single junction amorphous silicon solar cells
Then PET films were exposed to glow discharge Argon was PET/ITO/ p(a-SiC)/ i(a-Si)/n(a-Si)/AI.
plasma in a standard PECVD system to improve their The optical emission spectroscopy (DES) of glow
surface properties. The relationship between glow discharge was measured to monitor the Ar* signal
discharge parameters and the energy of Ar plasma were intensities by PR650 spectrometer. Optical measurements
investigated by DES. After Ar plasma treatment, not only of PET and the ITO-coated PET films were done at normal
the surface morphology of PET but also the adhesion of incidence in the wavelength range from 300 to 1400 nm,
the solar cell thin films to the PET substrates were with a double beam spectrophotometer Cary 5000. The
improved. Finally, single junction a-Si solar cells with a surface morphology of PET films and PET/ITO were
p-i-n superstrate type were fabricated on PET/ITO analyzed using atomic force microscopy (Nano Scope IV).
substrates at low temperature of Ts=125°C, and an initial The solar cell performance was characterized by current
efficiency of 4.80/0 was obtained. density versus voltage (J-V) measurements under AM1.5
illumination (100 mW/cm2 ).
INTRODUCTION
..
50 / 'iii
(a) Annealing of PET c 0.2
40 Q)
30
- untreated .E
- 80 in vacuu m 0.1
20 - 125 in vacuum
10
o
-
-
-
175 in vacuum
125 in air
175 in air
0.0 1----------------
300 400 500 600 700 800 900 1000 1100 1200 500 550 600 650 700 750 800
Wavelength I nm
Wavelengh I nm
100
90
0.5 (b)
~
0 80
::;, 0.4
Q) 70 cO
(J
c
III
:::
60
.a- 0.3 55Pa * * 75Pa
'E 50 "iii
til 40 (b) annealed PET l iTO C
c jg 0.2
/ * 55P,
....
III 30 -
-
untreated PETIITO
vacuum sonTO
C
I-
20 - vacuum 1251ITO
10
-
-
vacuum 1751ITO
air 1251ITO
0.1
* 55Pa
- air 17511TO
100W 150W 200W
Power
Fig. 2 DES measurements of Ar plasma at different
treatment parameters
It is reported [3] that the hydrophilicity and surface Optical transmittance spectra have been measured
activity of polymers could be raised by plasma treatments. for the PET films treated by Ar plasma as well as the
In the present work, a glow discharge argon plasma was untreated ones taken the air as reference and the results
generated in our standard PECVD system and applied to are represented in Fig.3. It can be observed that the
improve the surface properties of PET films. transmittance of Ar treated PET decreased in the
In the argon plasma, a large amount of energy is 300-500nm wavelength regions, however, the
transferred to the PET surface by bombardment of Ar+ and transmittance of PET/ITO was higher than the untreated
metastable Ar* from the plasma [4]. Fig.2(a) shows the one.
typical Ar plasma detected by optical emission spectrum, The surface morphology of Ar plasma treated PET
and here we focused on the peak corresponding to Ar* film was investigated by atomic force microscopy (AFM).
(750 nm) which is mainly observed. We know that the As shown in Fig. 4(a)(b), the original surface of untreated
concentrations of Ar* mainly depend upon the applied rf PET was relatively smooth with conical protuberances and
power density, however, as Fig. 2(b) shows, at a lower moderate roughness. After the Ar plasma treatment, the
pressure of 55Pa, the intensity of Ar* peak decreased size of the conical protuberances was increased
when the power reached 200W. At the power of 200W, the (RMS=0.919nm to RMS=2.680nm). Surface morphology of
Ar* peak intensities increased significantly with the working ITO films on PET substrates are shown in Fig.4 (c)(d),
gas pressures. In conclusion, in order to get higher energy orderly clusters assemblage was observed on Ar treated
of Ar plasma, the working pressure should be increased as PET/ITO films, while ITO films on untreated PET were
the rf power increased. almost out of order. We could infer that the Ar plasma
treatment improved the surface properties of PET
substrate, and the formation of ITO grain structure was
considerably enhanced accordingly.
-
"$. 80
Q)
u
c:
70
60
nJ
±: 50
E
III
40
e 30
E
~ 20
- PET
- Ar plasma PET
10 - PET+ITO
- Ar plasma PET+ITO
o 3':-:'0":0~.L-...-:-'---'-:-L-"""""c.........J'---_"":""~:"""'::"""""~
400 500 600 700 800 900 1000 1100 1200
Wavelength I nm
Fig. 3 The transmittance of PET and PET/ITO with and
without Ar plasma treatment
(b)
Fig. 5 Pictures of flexible solar cells on PET(a) and Ar
plasma treated PET(b) substrates
.-
l
PET
- . - Heat PET
:• ••• • .- ••
" ArPET
8
....::.......
.... _......e.
~
6
......... "
......
_. e.
til
ai
...... "
2
4 J se = 9.74 mAlc m
...c::
"'C
voc =0.90 V
(c) PETIITO, 5.272nm (d) Ar PET/ITO, 6.413nm 2
......
. .•
FF = 0.55
Fig. 4 Surface morphologies of untreated PET, PET ...l!! Efficiency =4.8%
o o0.0
~
treated by Ar plasma, untreated PETIITO, Ar plasma
PET/ITO 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Vo ltag e / V
Amorphous silicon solar cells deposited on PET/ITO
substrates at low temperature Fig. 6 Performances of a-Si solar cells deposited on
untreated PET, annealing PET, PET treated by Ar plasma
Single junction a-Si solar cells with a p-i-n superstrate
type on PET/ITO substrates were fabricated at low
temperature of Ts=125·C, with a structure of PETIITO/ CONCLUSIONS
p(a-SiC)/ i(a-Si)/n(a-Si)/AI. As shown in Fig. 5(a), solar
cells deposited on untreated PET were cracking/peeling As a conclusion, we proposed a low cost solution of
from the substrates, on the other hand, after Ar plasma flexible amorphous silicon solar cells on the PET
treatment, the adhesion of the solar cell thin films to the substrates. The results showed that Ar plasma treatment
PET substrates was promoted. Finally, single junction a-Si was an effective way to improve the surface properties of
solar cells on PET/ITO substrates with an initial efficiency low price PET films.
of 4.8% have been obtained, while the untreated ones Up to date, amorphous silicon solar cells with an
showed poor performances with the efficiency of only initial efficiency of 4.8% have been obtained on PET/ITO
2.3%-2.8%. substrates at low temperature of 125·C.
REFERENCES
[1] Ichikawa Y, Yoshida T, Hama T, et aI., "Production
technology for amorphous silicon-based flexible solar
cells". Solar Energy Materials & Solar Cells, 66, 2001, pp.
107.