MTRL 478 – HW2

1. (10 pt) In the following two simple cubic unit cells, identify the two planes shown with
Miller indices. Show all steps in the determination process.

Figure (a) Figure (b)

2. (8 pt) If the 2 above planes are put in the same unit cell, and the acute angle between
these two planes is 2θ, calculate cos(θ). You need to sketch a figure showing θ and label
relevant points/segments for your calculation.

3. (6 pt) Crystal directions

In the following cubic unit cell, please sketch [221] and [012] directions.

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4. (6pt) The lattice constant of Si is denoted as “a”. For a Si unit cell below, please write
down the coordinates of 4 atoms inside the unit cell. (Coordinate system is defined
below). The original O is at the left bottom back Si atom position and labelled in red.

5. (10 pt)

Hint: you can assume each dopant occupy a cube of edge length L.

6. (8 pt) Please sketch the CZ crystal growth apparatus and describe CZ Si wafer growth
process.

7. (10 pt) Please read Hu text 1.7, and explain the following concepts.

Important Note on Fermi energy and Fermi level: the concept of Fermi Energy E f and
Fermi level EF can be confusing across different textbooks. For more details, please
check this out: https://en.wikipedia.org/wiki/Fermi_energy. In this course, we use Ef for
Fermi energy, which is the energy of the highest occupied energy state at 0K (see
Callister textbook 18.5). We use EF for Fermi level. The Fermi level can be considered to
be a hypothetical energy level of an electron, such that at thermodynamic equilibrium
this energy level would have a 50% probability of being occupied at any given time. In
Hu’s text page 17, these two terminologies are both mentioned. However, what he
meant was EF the Fermi level.

a) What is the Fermi-Dirac probability function about? (3 pt)

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b) (7 pt) Please plot the Fermi–Dirac distribution function fFD(E) as a function of E for (EF
– 10kT < E < EF + 10kT). Please plot the Boltzmann approximation fB(E) on the same
figure, and find out the E regime where 0.95 fFD(E) < fB(E) < 1.05 fFD(E).