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Techniques
• Inner-shell ionization – an emission of
characteristic x-ray quanta or Auger
electrons
• Electron energy-loss spectroscopy
– The electronic structure Resolution
– The elemental composition The volume
– Efficient for low-Z elements irradiated by the
electron
Energy dispersive Electron Photon (X- ~ 10 -100 nm ~ 2 nm Z5 TEM foil 0.1%
X-ray spectroscopy ray) (Sample
in TEM (EDX, EDS) thickness) Accuracy: 5%
Limited range
20 kV, Cu
Generation - escape
0.0276 AE 01.67
R
Z 0.889
X-Ray Generation
Beam current
B, C = constants
depending on the
X-ray line
Transition to
Florescent yield
Detector:
• reversed p-i-n (p-type, intrinsic, n-type)
• e-h generation
3.8 eV is required to form an e-h (not all energy creats e-h holes)
A Cu Ka, 8040/3.8=2300 e-h holes ~ 10-16C – small signal – preamplifier (FET)
•Be(7-12um) > Na
•Ultrathin (<100nm polymer) > C
•Windowless (in vacuum)> Boron
Interpretation of X-ray Spectra
Experiment
• Beam energy > 2 X highest peak energy
• Reproducible spectrum from the same
area
• Counts: enough to recognize peaks; not
too high (<3000 counts/sec; dead time<
50%) to minimize sum and escape peaks
Single electron
excitation: background
~ 30 eV up - SEs
EELS low Better- Li and 0.05 at% (for Better (1 nm) No stray etc. Poor 10%
He (2) some
elements)
ELNES and EXELFS
• ELNES: Energy loss near edge
structure Al K, from Ni3Al, background subtracted
– The probability of the electron
ending up at a particular energy
level in the conduction band
depends on the conduction
band density of states (DOS)
– Due to the selection rule, the
near edge structure doesn’t
show the full DOS
– DOS depends on the bonding
state of the atom
• EXELFS: Extended energy loss fine
structure
– 50-200 eV beyond the edge
– The structure depends on local
arrangement of atoms around
the excited atom
– To get nearest neighbour
distances and radial distribution
functions
– Low noise spectra are needed
EFTEM
• Energy-filtered Microscopy
Normal EFTEM:
– Collect an image from a given energy loss slice // xy plane,
– Two ways: low energy
• STEM: focused probe; collect an energy loss resolution
spectrum through a slit at the desired energy
loss; scan to create an image
– collecting spectrum at each image point
– Useful for the detection of low concentrations of
an element
• TEM: Use extra lenses after the energy selecting
slit to allow the original image to be reformed STEM Spectrum
(GIF, Gatan imaging filter) Imaging: sample drift
– collecting an image at each energy loss and distortion
– Applications
• Zero loss filtering
– Allow thick regions to be examined
t I unf I
• Thickness determination: t/ map ln ln1 loss
– Thickness map: a zero loss image (I0) and an I0 I0
unfiltered image (Iunf) or a loss image (Iloss), :
total inelastic mean free path …. Non-uniform
composition?!
• Core-loss mapping: Elemental map
– Jump-ratio image: dividing the iamge beyond the
edge by an image below the edge – thickness
variations are removed (at least approximately)
– 3 Window method (can be quantified): 2 pre-
edge and one post-edge, the two pre-edge images
are used to estimate the background under the
post-edge image and the background can be
subtracted … the thickness variations!
– Image spectroscopy: a series of images is Si 110 CBED at 100 kV
collected both before and after the edge of
interest – to get a better background (longer time
larger dose)
Appendix
Inelastic Scattering
• Electron-Specimen Interactions with Energy
Loss
• Differential Cross Section for Single-Electron
Excitation
• Bethe Surface and Compton Scattering
• Approximation for the Total Inelastic Cross
Section
Electron-Specimen Interactions with Energy Loss
• Elastic preserves: Kinetic energy and momentum
• Inelastic conserves total energy and momentum
– Energy conversion: atom-electron excitation
– Energy loss: the primary beam
Excitation Mechnisms:
• Oscillation in molecules and phonon excitations in solids:
• E ~ 20meV-1 eV
• Monochromator
• Low beam intensity – low spatial resolution
• Infrared
• Intra- and interband excitation of the outer atomic electrons/ plasmons
• Broad maxima: E ~ 3-25 eV
• Concentration of C/V band electrons; chemical bonds, band structure
• Visible and ultraviolet
• Ionization of core electrons
• Edge E
• Spectrum ~ eV beyond E
• low loss – less localized ( excite atom from ~ 10 nm – small angle)
• For low atomic number: total inelastic cross section > total elastic cross section
• Thick specimens: chromatic aberration due to energy loss
• Energy - heat
Differential Cross Section for Single-
electron Excitation
• Energy Transferred
– E – Ei→Ef
– Selection rules: l=1
– Scattering vector: q ' k f ki
E
2 2
2m
k0 k n2
2
2m
2k0 q' cos q'2
2
2m
2k0 q' cos
2 k0 q'
m
cos
d i f m2 k f
f V r i
Inelastic cross section:
2
d 4 ki i ais (rj ) exp iki ri f a fs (rj ) exp ik f ri
d i f me 2 (q' )
2
exp ik f ri a*fs (rj )V ri , rj ais (rj ) exp iki ri d 3ri d 3rj
f V r i
2 2
2
d 2 0 q'
4
(q' ) a*fs (rj ) exp iq 'rj ais (rj )d 3rj a*fs (rj )1 iq 'rj ...ais (rj )d 3rj q '2
2 2 2 2 2
a fs u rj a is q '2 xif
2 2 2 2
d i f me 2 (q' )
2 2 2
me 2 q ' xif me 2 xif
2
2
2
q'2 k0 q' cos k02 2 E2
2 2
d 2 0 q' 2 0 2 0 q'
4
q '4 2
2 2 2 2 2
d i f
2 2 2 2
me 2 xif me 2 2 xif 2 1 xif xif
2
xif
2 2 2 2 2 2 2
d 2
2 0 q'
2 2 2 2
2
4 0 k0 E aH k0 E 2 aH E aH E
2
q' cos 2
2 2 2 2
q' cos mE mE E
2
E 2 2 2
k02 k0 k0 p0 2 E0
Differential Cross Section for Single-
electron Excitation
• Generalized Oscillator strength (GOS)
2mE (q' )
2
2mE
f if q'
2
xif
q'
2 2 2
• Bethe Surface
df if q' , E
dE