New Generation of Negative Differential Resistance Circuits

New generation of negative resistance
circuits: integration of lasers and detectors

with negative differential devices
José Figueiredo
http://w3.ualg.pt/~jlongras/
Centro de Electrónica, Optoelectrónica e Telecomunicações

Departamento de Física da Faculdade de Ciências e Tecnologia
Universidade do Algarve/Universidade de Lisboa (2017)
In collaboration with Bruno Romeira (CEOT),

Thomas J. Slight and Charles N. Ironside (University of Glasgow, Scotland).
1
SEON 2007
segunda-feira, 16 de setembro de 2018
Outline
Positive versus negative resistance
Voltage and current controlled negative resistance
“Old ways” of getting negative resistance
Tunnel diodes and resonant tunneling diodes
Integration of a RTD with an optical waveguide (RTD-OW)

Optical modulation with a RTD-OW
Optical detection with a RTD-OW
Laser emission controlled by a RTD

2
SEON 2007
Positive resistance
I I linear
V + Z I=G(V)V
-
slope >0
G: Conductance V
Non-linear
“Ohm’s law”:
∆V>0→ ∆I ≥ 0
G (V)≥ 0
Dynamic resistance R=1/G >0
3
SEON 2007
Negative resistance (voltage controlled)
I N shape IV
I
slope<0
V + Z I=GV
-
slope >0
G: Conductance
V
“Ohm’s law”: Non-linear
∆V>0→ ∆I < 0
G<0
Dynamic resistance R=-1/G <0
4
SEON 2007
Negative resistance (current controlled)
I S shape IV
I slope>0
I +- Z V=G(I)I
slope<0
G(I) : Conductance
“Ohm’s law:” V
∆I>0 → ∆V can be < 0
G(I): <0 Dynamic resistance R=-1/G<0

Example: gas tubes
5
SEON 2007
“Old ways” of getting negative resistance
With transistors
With amp-ops
Rin=Vs/Is A real generator behave like an ideal one, and

= - R3(R1/R2) the generator's entire current will go to the
load ZL, whatever the value of ZL and RS.
6
SEON 2007
Advantages of negative resistance devices
Reduce circuit complexity
Reach ultra-fast operating speed (high speed switching)
High frequency bistable or multistable circuits as relaxation
oscillators, single-pulse generators, and sine-wave generators.
Create a multiple-peak current-voltage characteristics

allowing functional applications such as memories, multistate
memories
...
7
SEON 2007
“Novel ways” to get negative resistance
Tunnel diodes or Esaki diode
These diodes have a heavily doped p-n junction
only some 10 nm wide. The heavy doping results in
a broken band-gap, where conduction band electron
states on the n-side are more or less aligned with
valence band hole states on the p-side. A small
applied voltage induces the electron tunneling from
the n-side conduction band to the p-side valence
band.
Resonant tunneling diodes (RTDs)

A resonant tunnel diode (RTD) is a device which uses quantum effects and negative
differential resistance (NDR). As an RTD is capable of generating a terahertz wave at
room temperature, it can be used in ultra high-speed circuitry. RTDs are formed as a
single quantum well structure surrounded by very thin layer barriers. This structure is
called a double barrier structure. This structure can be grown to by molecular beam
heteroepitaxy. GaAs and AlAs in particular are used to form this structure. AlAs/InGaAs
or InAlAs/InGaAs can be used.
8
SEON 2007
RTD as a voltage controlled negative resistance
I N shape I-V
I slope<0
V + Z
-
I=G(V)
slope>0
G(V) : Conductance Vp VV V
∆V>0 → ∆I can be < 0
G(V): <0
Vp<V<Vv: the dynamic resistance R=-1/G(V)<0

9
SEON 2007
What is a Resonant Tunnelling Diode (RTD)?
(from an electron point of view)
Single Quantum barrier
Tunnelling
AlGaAs GaAs AlGaAs
Conduction band minimum profile

Double Barrier Quantum Well
Resonant
tunnelling
GaAs AlAs GaAs AlAs GaAs
10
SEON 2007
Tunnelling versus Resonant Tunnelling
Electron Transmission Probability

Ec 2
1.0 E ∆Ec
Ef
Ec 1
Ec 2
E ∆Ec
Ef
Ec 1
0.5 n GaAs AlAs GaAs AlAs n GaAs
-d 0 L L+d Z
0.0
0.0 0.2 0.4 0.6 0.8 E-Ec (eV)
1
(d=1.4 nm, L=7.0 nm, ∆Ec=1.0 eV)
11
SEON 2007
How does a resonant tunnelling diode work?
DBQW-RTD Structure
Emitter
n+ GaAs I
n GaAs NDC
Double-Barrier
{ AlAs
GaAs
AlAs
~10 nm
Ip
Collector n GaAs Collector

n+ GaAs Iv
GaAs
Vp Vv V
Γ-Conduction Band profile
EF
EC
EF
E0 EC V=Vv
EF EF V=Vp EF
EF
EC EC EC EC
Zero Bias Resonance Off Resonance
12
SEON 2007
Why optoelectronic RTD based devices ?
Devices such as lasers diode, modulators, switches and detectors
are based on semiconductor waveguides employing pin junctions.
Traditionally, the change in the current through a pn junction is
imposed by a quite complex drive circuit.
Integrating a DBQW-RTD with a laser diode, for example, the
light emission can be controlled by the RTD.
The DBQW-RTD:
is the “fastest purely electronic solid state device”
exhibits Negative Differential resistance (NDR) up to terahertz

frequencies
can be easily integrated with conventional electronic and
optoelectronic devices
13
SEON 2007
Integration of a RTD with an optical waveguide
InGaAlAs/InP waveguide light
(AuGe)NiAu silica
RTD n+ InGaAs collector contact emitter contact
n+ InAlAs
n InGaAs
}
AlAs n InGaAlAs
InGaAs 1 um 500mm
AlAs n InGaAlAs 300mm
n InGaAs (Si: 2x1016 cm-3)
n+ InP
W SI InP
SI InP
Integration advantages:
The electric field distribution across the waveguide section is strongly
dependent on the bias voltage.

Possibility of electric field self-oscillation at high frequency due to the
gain in the NDR region.
Electrical control of waveguide optical properties, such as
losses/transmission.
High-speed operation achievable due to the small RC time constant.
14
SEON 2007
RTD-OW wafer structure
In0.53Ga0.47As/AlAs
(Si: 5×1016 cm-3) (Si: 5×1016 cm-3)
(Si: 2×1018 cm-3)

(Si: 2×1018 cm-3)
Expected performance:
hOperating at 1300 nm and 1550 nm
hLarger bandwidth
h Larger modulation depth
h Higher bandwidth-to-drive-voltage ratio
15
SEON 2007
Implemented RTD-OW
RTD-OW Side View
Ridge
Waveguide
Ridge Waveguide
W
gold
Light
CPW Line
50 W CPW Line
50 W
0,4 mm
SMA
Gold Wire
silica
0,5 mm
16
SEON 2007
RTD-OW typical I-V characteristic
electrical gain
The curve shows signs of self-oscillation.

PVCR=7 and ∆J= 13.5 kA/cm2
PVCR: peak-to-valley current ratio
17
SEON 2007
Resonant Tunnelling Relaxation Oscillator
Diagram of the RT Relaxation Oscillator Working Principle
RTD Transmission Line Oscilloscope

and/or
(electrical delay td) RL Streak Camera
RTD I-V Characteristic Voltage across the RTD Current across the RTD
I I
4td
a
b time
Vp Vv V
18
SEON 2007
Optical modulation with
the RTD-OW
19
SEON 2007
http://w3.ualg.pt/~jlongras/ RTD-OW electroabsorption modulator (RTD-EAM)
20
SEON 2007
Self and direct modulation with a RTD-OW
Coaxial cable 15 cm long Coaxial cable 10 cm long
Light Transmission (a.u.)

200 150
150
100
100
50
50
0 0
0 3750 7500 11250 0 3750 7500 11250
time (ps) time (ps)
RF injected: 950 MHz - amplitude 0.6 V RF injected: 16 GHz - amplitude 0.4 V

-80
RF power (dB)
-85 0 200 400 600 800 1000
120 Figure of
-90 16 GHz
Merit:
-95
80
-100 40 GHz/V
-105
40
-110
0 -115
0 1.0 2.0 3.0 4.0 5.0 6.0 -120
time (ns)
Frequency
21
SEON 2007
Electrical field induced absorption change
Γ-Conduction band profile: depletion
region
EF
EC
EF
E0 EC V=Vv
EF EF
V=Vp
EF
ε E
F
EC EC EC EC
Zero Bias Resonance Off Resonance
E
Waveguide Transmission (a.u.)
Ec
Eg Vv
Ev
ε V=0 V
Eg'
V~Vp
λg' (ε) >λg λg'
V~Vv
D z
(depleted region) Wavelength
22
SEON 2007
Optical detection with
the RTD-OW
23
SEON 2007
http://w3.ualg.pt/~jlongras/ RTD-OW photo-detector
24
SEON 2007
http://w3.ualg.pt/~jlongras/ RTD-OW-PD results at 1 GHz
…
25
SEON 2007
http://w3.ualg.pt/~jlongras/ RTD-OW-PD results at 5 GHz
26
SEON 2007
Integration of a RTD with a pin photo-detector*
Conduction Band Diagram I-V Characteristic
I (mA)
RTD Light
18 0.2 mW @ 1.3 mm
Energy
15
AlAs
Barriers Contacts InAlAs 12
Window
9 Dark
Und InGaAs 6
n InGaAs 3
Window
InAlAs
InP Substrate 0 1 2 3 4 5 6 7 8 V (volt)
Responsivity
(A/W)
++
++ -0.0
hv -2.0
n+
+ InGaAs -4.0
-6.0
-8.0 2 GHz
-10.0
Distance
4.0 4.5 5.0 5.5 6.0 V (volt)
*T. S. Moise et al, IEEE Photonics Technology Letters, 1997, 9 (6), 803.
J.F. Martins-Filho et al, 40 dB Photodetection Gain in a Resonant Tunneling Diode Optical Waveguide, submited to
IEEE Photonics Technology Letters.
27
SEON 2007
Laser emission controlled
by a RTD
28
SEON 2007
Hybrid integration of a RTD with a laser diode
RTD, LD, RTD+LD I-V characteristics Light output due to relaxation oscillation
Integration of a Resonant Tunnelling Diode and an Optical Communications Laser, T. J. Slight, 2006.
29
SEON 2007
Monolithic integration of a RTD with a LD
Possible implementations
RTD-OW wafer structure

RTD-LD schematics
Integration of a Resonant Tunnelling Diode and an Optical Communications Laser, T. J. Slight, 2006.
30
SEON 2007
Conclusion
Successful design and implementation of optoelectronic devices
incorporating RTDs.
Demonstration of RTD waveguide modulator: direct high frequency

(up to 16 GHz) modulation (up to 18 dB).
Operation as a relaxation oscillator optical modulator.
Demonstration of RTD waveguide detector up to 5 GHz
Successful integration of a RTD with a laser diode.

Possible applications of a RTD-LD:

Chaotic light source to generate pseudo-random bit sequence
Clock recovery hen operated as a forced oscillator driven by a
digital data source
Direct data encoding using small perturbation signals
31
SEON 2007
Thank you
32
SEON 2007

New Generation of Negative Differential Resistance Circuits

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New Generation of Negative Differential Resistance Circuits

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New generation of negative resistance

circuits: integration of lasers and detectors

Centro de Electrónica, Optoelectrónica e Telecomunicações

In collaboration with Bruno Romeira (CEOT),

Voltage and current controlled negative resistance

“Old ways” of getting negative resistance

Tunnel diodes and resonant tunneling diodes

Integration of a RTD with an optical waveguide (RTD-OW)

Optical modulation with a RTD-OW

Optical detection with a RTD-OW

Laser emission controlled by a RTD

∆I>0 → ∆V can be < 0

G(I): <0 Dynamic resistance R=-1/G<0

Rin=Vs/Is A real generator behave like an ideal one, and

Reach ultra-fast operating speed (high speed switching)

High frequency bistable or multistable circuits as relaxation

oscillators, single-pulse generators, and sine-wave generators.

Create a multiple-peak current-voltage characteristics

allowing functional applications such as memories, multistate

Resonant tunneling diodes (RTDs)

∆V>0 → ∆I can be < 0

Vp<V<Vv: the dynamic resistance R=-1/G(V)<0

Conduction band minimum profile

Double Barrier Quantum Well

Electron Transmission Probability

(d=1.4 nm, L=7.0 nm, ∆Ec=1.0 eV)

Collector n GaAs Collector

exhibits Negative Differential resistance (NDR) up to terahertz

dependent on the bias voltage.

(Si: 5×1016 cm-3) (Si: 5×1016 cm-3)

(Si: 2×1018 cm-3)

The curve shows signs of self-oscillation.

RTD Transmission Line Oscilloscope

Light Transmission (a.u.)

RF injected: 950 MHz - amplitude 0.6 V RF injected: 16 GHz - amplitude 0.4 V

InP Substrate 0 1 2 3 4 5 6 7 8 V (volt)

RTD-OW wafer structure

Demonstration of RTD waveguide modulator: direct high frequency

Operation as a relaxation oscillator optical modulator.

Demonstration of RTD waveguide detector up to 5 GHz

Successful integration of a RTD with a laser diode.

Possible applications of a RTD-LD:

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