VDRM = 4500 V Asymmetric Integrated Gate-

ITGQM = 4000 A
ITSM = 32 kA
Commutated Thyristor
VT0 = 1.40 V 5SHY 35L4510
rT = 0.325 mΩΩ
PRELIMINARY
VDClink = 2800 V
Doc. No. 5SYA1232-00 Mai 01

• Highest snubberless turn off rating

• Optimized for medium frequency (<1kHz) and
wide temperature range
• Suitable for series connection
• High reliability
• Very high EMI immunity
• Simple control interface with status feedback
• AC supply voltage

Blocking
VDRM Repetitive peak off-state voltage 4500 V VGR ≥ 2V
IDRM Repetitive peak off-state current ≤ 50 mA VD = VDRM VGR ≥ 2V
Permanent DC voltage for 100 Ambient cosmic radiation at sea
VDClink 2800 V
FIT failure rate level in open air.

Mechanical data (see Fig. 6)

min. 36 kN
Fm Mounting force
max. 44 kN
Dp Pole-piece diameter 85 mm ±0.1 mm
H Housing thickness 26 mm ±0.5 mm
m Weight IGCT 2.90 kg
Ds Surface creepage distance ≥ 33 mm Anode to Gate
Da Air strike distance ≥ 10 mm Anode to Gate
l Length IGCT 439 mm ±1.0 mm
h Height IGCT 40 mm ±1.0 mm
w Width IGCT 172.5 mm ±1.0 mm

ABB Semiconductors AG reserves the right to change specifications without notice.

 5SHY 35L4510

GCT Data
On-state (see Fig. 2)
ITAVM Max. average on-state current 1700 A Half sine wave, TC = 85 °C
ITRMS Max. RMS on-state current 2700 A
32 kA tp = 10 ms Tj = 125 °C
Max. peak non-repetitive
ITSM After surge:
surge current 12 kA tp = 100 ms
VD = VR = 0V
6 2
5.1⋅10 A s tp = 10 ms
I2t Limiting load integral
7.2⋅106 A2s tp = 100 ms
VT On-state voltage ≤ 2.70 V IT = 4000 A
VT0 Threshold voltage 1.40 V Tj = 125 °C
IT = 1000 - 4000 A
rT Slope resistance 0.325 mΩ

Turn-on switching (see Fig. 8, 9)

Max. rate of rise of on-state f = 0..500 Hz Tj = 125 °C
di/dtcrit 1000 A/µs
current IT = 4000 A VD = 2800 V
tdon Turn-on delay time ≤ 3 µs VD = 2800 V Tj = 125 °C
tr Rise time ≤ 1 µs IT = 3300 A
ton (min) Min. on-time 10 µs Rs = 0.65 Ω Li = 5.0 µH
Eon Turn-on energy per pulse ≤ 1.5 J CCL = 10.0 µF LCL = 0.3 µH

Turn-off switching (see Fig. 3, 4, 8, 9)

Max. controllable turn-off VDM ≤ VDRM Tj = 125 °C
ITGQM 4000 A
current VD = 2800 V LCL = 0.3 µH
tdoff Turn-off delay time ≤ 7.0 µs VD = 2800 V VDM ≤ VDRM
tf Fall time ≤ 1.0 µs Tj = 125 °C Rs = 0.65 Ω
toff (min) Min. off-time 10 µs ITGQ = 3300 A Li = 5.0 µH
Eoff Turn-off energy per pulse ≤ 18 J CCL = 10.0 µF LCL = 0.3 µH

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA1232-00 Mai 01 page 2 of 7
 5SHY 35L4510

Gate Unit
Power supply (see Fig. 5, 6, 7)
AC square wave. Without galvanic
VGAC Gate supply voltage 24..40 VAC
isolation to power circuit.
PGin Gate Unit power consumption ≤ 100 W fS = 500 Hz, ITGQ = 1500 A, δ = 0.5
X1 Gate Unit power connector WAGO, Part Number 231-533/001-000 Note 1
Optical control input/output (see Fig. 8)
Pon CS Optical input power > -21 dBm
Poff CS Optical noise power < -40 dBm Valid for 1mm plastic optical fibre
Pon SF Optical output power > -19 dBm (POF)
Poff SF Optical noise power < -50 dBm
tGLITCH Pulse width threshold ≤ 400 ns Max. pulse width without response
CS Receiver for command signal Agilent, Type HFBR-2528 Note 2
SF Transmitter for status feedback Agilent, Type HFBR-1528 Note 2
Visual feedback (see Fig. 8, 9)
LED1 (green) Gate OFF "Light" when GCT is off
LED2 (yellow) Gate ON "Light" when gate-current is flowing
LED3 (red) Fault "Light" when not ready / Failure
LED4 (green) Power supply voltage OK "Light" when power supply is within specified range
Note 1: WAGO, www.wago.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA1232-00 Mai 01 page 3 of 7
 5SHY 35L4510

Thermal
Tj Operating junction temperature range -40…125 °C
Tstg Storage temperature range -40…60 °C
Tamb Ambient operational temperature range -40…60 °C
Tamb Ambient operational and storage temperature -40…70 °C IGCT operation with
range lifetime reduction
RthJC Thermal resistance junction to case ≤ 8.5 K/kW Double side cooled
RthCH Thermal resistance case to heatsink ≤ 3 K/kW Double side cooled

Analytical function for transient thermal impedance.

n i 1 2 3 4
Z thJC (t) = å i =1
R i (1 - e - t /τ i
) R i(K/kW)
τi(s)
5.625
0.52748
1.486
0.08969
0.849
0.00905
0.527
0.00244
FM = 36… 44 kN Double side cooled

ZthJC [K/kW]
10
Fm = 36...44 kN
9 Double side cooled

0
2 3 4 5 6 7 8 2 3 4 5 6 7 8 2 3 4 5 6 7 8 2 3 4 5 6 7 8
10-3 10-2 10-1 100 101
t [s]

Fig. 1 Transient thermal impedance (junction-to-case) vs. time (max. values).

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA1232-00 Mai 01 page 4 of 7
 5SHY 35L4510

GCT Part

IT [A] EOFF [J]

4500 25
VT- Kurve 125°C Tj = 125°C
VT- Kurve 25°C VD = 2800 V
4000
Li = 5µH
20 CCL = 10µF
3500
Rs = 0.65 Ω
3000 LCL = 0.3µΗ

15
2500

2000
10
1500

1000
5

500

0 0
1.0 1.5 2.0 2.5 3.0 0 1000 2000 3000 4000
VT [V] ITGQ [A]

Fig. 2 GCT on-state characteristics. Fig. 3 GCT turn-off energy per pulse vs. turn-
off current.

ITGQ [A] PGin [W]

5000 100

4500
Tj = 125 °C
4000 80

3500 Tj = -40 °C

VDM ≤ VDRM
3000 60
Li = 5 µH
2500 CCL = 10 µF fs = 1000 Hz
RS = 0.65 Ω fs = 500 Hz
2000 LCL = 0.3 µΗ 40 fs = 50 Hz

1500

1000 20

500
duty cycle δ = 0.5
0 0
0 1000 2000 3000 4000 0 500 1000 1500
VD [V] ITGQ [A]

Fig. 4 Safe Operation Area Fig. 5 Max. Gate Unit input power

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA1232-00 Mai 01 page 5 of 7
 5SHY 35L4510

Fig. 6 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated
otherwise.

Gate Unit GCT

Supply (VAC)
X1 Internal Supply (without galvanic isolation to power circuit)
Anode

LED1
LED2 Gate
Turn-
LED3
LED4
On
Circuit
Logic
Command Signal (Light)
CS Rx Monitoring Cathode
Turn-
Off
Status Feedback (Light) Circuit
SF Tx

Fig. 7 Block diagram.

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA1232-00 Mai 01 page 6 of 7
 5SHY 35L4510

Turn-on Turn-off
di/dt VDM
ITM VDSP
VD
IT
VD
0.9 VD IT
0.4 ITGQ
CS CS
0.1 VD

VG VG
SF

SF
tdon1
tdon tdoff

tr

Fig. 8 General current and voltage waveforms with IGCT - specific symbols.

Li LCL

Rs DUT

CCL
VLC

LLoad

Fig. 9 Test circuit.

ABB Semiconductors AG reserves the right to change specifications without notice.

ABB Semiconductors AG Doc. No. 5SYA1232-00 Mai 01

Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland

Tel: +41 (0)62 888 6419

Fax: +41 (0)62 888 6306
E-mail info@ch.abb.com
Internet www.abbsem.com