A.

2 Semiconductor Equations
Semiconductor carrier concentrations
Thermal equilibrium

n = Nc e-(Ec-Ef)/kT = ni e(Ef-Ei)/kT p = Nv e-(Ef-Ev)/kT = ni e(Ei-Ef)/kT

2π me* kT 3/2 2π mh* kT 3/2

Nc = 2 [ ] Nv = 2 [ ]
h2 h2

1
n p = ni2 = NcNv e-Eg/kT f(E) =
1 + e(E-Ef)/kT

N -N (Nd-Na)2 N -N (Na-Nd)2
n= d a+ + ni2 p= a d+ + ni2
2 4 2 4
Not in thermal equilibrium

n = Nc e-(Ec-Fn)/kT = ni e(Fn-Ei)/kT p = Nv e-(Fp-Ev)/kT = ni e(Ei-Fp)/kT

p n = ni2 e(Fn-Fp)/kT= NcNv e(-Eg/2+Fn-Fp)/kT

Field, potential and energy

dφ dEc dEv dEi

q =-q = = = q = - q ∇ φ = ∇ Ec = ∇ Ev = ∇ Ei
dx dx dx dx

d ρ q ρ q
= = (p - n + Nd+ - Na-) ∇. = = (p - n + Nd+ - Na-)
dx εs εs εs εs

Q
⌠
⌡ dA = εs
Poisson's equation

∂2φ ∂2φ ∂2φ -ρ

∇2φ = + + =
∂x2 ∂y2 ∂z2 εs

1 ∂ ∂φ 1 ∂2φ ∂2φ -ρ
cylindrical coordinates: [r ] + 2 2 + 2 =
r ∂r ∂r r ∂θ ∂z εs

1 ∂ 2 ∂φ 1 ∂ 2 ∂φ 1 ∂2φ -ρ
spherical coordinates: 2 [r ]+ 2 [r sinθ ] + 2 =
r ∂r ∂r r sinθ ∂θ ∂θ r sinθ ∂ϕ2 εs

Current relations including drift and diffusion

Principles of Electronic Devices A2.1 © Bart J. Van Zeghbroeck 1996

 ∂n
Jn = q n µn + q Dn Jn = q n µn + q Dn ∇n Dn = µn Vt
∂x

∂p
Jp = q p µp - q Dp Jp = q p µp - q Dp ∇n Dp = µp Vt
∂x
Minority carrier rate (continuity) equations

∂np 1 ∂Jn ∂pn 1 ∂Jp

= + (Gn-Rn) =- + (Gp-Rp)
∂t q ∂x ∂t q ∂x

∂np 1 (n - n ) ∂pn 1 (p - p )
∇. p - p p0 + Gn
= ∇.J ∇. n - n n0 + Gp
= - ∇.J
∂t q τn ∂t q τp

Gn = Gp = generation due to light, avalanche multiplication, etcetera.

(np - np0) (pn - pn0)

Rn = Rp =
τn τp
Generation-Recombination equations

∂n ∂p P (x)
Gn = light = Gp = light = α q opt
∂t ∂t A Eph

Ub-b = b (np - ni2)

(pn - ni2) 1
USHR = , with = Nt vth σ
[n + p + 2 ni cosh((Ei-Et)/kT)] τ0 τ0

Us = s p' with s = Nst vth σ

UA = Γn n (np - ni2) + Γp p (np - ni2)

Diffusion equations

d2n np - np0
0 = Dn - , x < -xp , Dn = µn Vt
dx2 τn

d2p pn - pn0
0 = Dp - , x > xn , Dp = µp Vt
dx2 τp

(np - np0) (pn - pn0)

0 = Dn ∇2n - 0 = Dp ∇2p -
τn τp
Metal-semiconductor junction

Principles of Electronic Devices A2.2 © Bart J. Van Zeghbroeck 1996

 1 q Nd xn2
φi - Va = ΦM - χ - (Ec - Efn) -Va = (n-type)
q 2εs

1 q Na xp2
φi - Va = χ + (Ec - Efp) - ΦM -Va = (p-type)
q 2εs
p-n junction relations (abrupt junction)

φi - Va = q Nd xn2/2εs + q Na xp2/2εs

max = q Nd xn/εs = q Na xp/εs

N N 2εs 1 1
φi = Vt ln( a 2 d) xd = ( + ) (φi-Va)
ni q Na Nd

2εs Na 1 2εs Nd 1
xn = (φ -V ) xp = (φ -V )
q Nd Na+Nd i a q Na Na+Nd i a

Dp Dn
J = J0 (eVa/Vt - 1), J0 = q ni2 ( + ) (ideal current for a short diode)
NdWn' NaWp'

np(-xp) = np0 eVa/Vt pn(-xn) = pn0 eVa/Vt

D p D n q x' ni V /2V
Jt = q ( p n0 + n p0 + xd ni2 b) (eVa/Vt - 1) + (e a t - 1)
Lp Ln 2τ0

Principles of Electronic Devices A2.3 © Bart J. Van Zeghbroeck 1996

 BJT relations (npn with short emitter, base and collector)

IE = a11 (eVBE/Vt - 1) + a12 (eVBC/Vt - 1)

IC = a21 (eVBE/Vt - 1) + a22 (eVBC/Vt - 1)

where for short quasi-neutral regions (short compared to the diffusion length)

DE DB
a11 = -IES = - q A ni2 ( + )
NEwE NBwB

D
a12 = a21 = αF IES = αR ICS = - q A ni2 ( B )
NBwB

D DB
a22 = -ICS = - q A ni2 ( C + )
NCwC NBwB

1
α=
w N D
1+ B B E
wENEDB

wB2
αT = 1 -
2DBτB

q A ni2wB V /2V
IrB = (e BE t - 1)
2NBτB

Principles of Electronic Devices A2.4 © Bart J. Van Zeghbroeck 1996

 Miscellaneous Fundamental Relations

F = Q ( + v x B) , Q = charge of the particle

dQ εs
C= =
dV xd

dv h dk
F = m* =
dt 2π dt

1 4π2 ∂2E
=
m* h2 ∂k2

2π ∂E
vg =
h ∂k

8π2 m*
∇2 Ψ + (E - V(x)) Ψ = 0
h2

ρ
∇2 φ = −
ε

Principles of Electronic Devices A2.5 © Bart J. Van Zeghbroeck 1996