LOW NOISE

NE76038
L TO Ku-BAND GaAs MESFET

FEATURES NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY
• LOW NOISE FIGURE: VDS = 3 V, IDS = 10 mA
1.8 dB typical at 12 GHz 4 24
• HIGH ASSOCIATED GAIN:
3.5 21
7.5 dB typical at 12 GHz Ga

Associated Gain, GA (dB)

Noise Figure, NF (dB)
• LG = 0.3 µm, WG = 280 µm 3 18

2.5 15
• LOW COST PLASTIC PACKAGING
• TAPE & REEL PACKAGING OPTION AVAILABLE 2 12

1.5 9

1 6
NF

DESCRIPTION 0.5 3

0 0
NE76038 is a high performance gallium arsenide metal
1 10 20
semiconductor field effect transistor housed in a plastic
package. Its low noise figure makes this device appropriate Frequency, f (GHz)
for use in the second or third stages of low noise amplifiers
operating in the 1 - 14 GHz frequency range. The device is
fabricated using ion implantation for improved RF and DC
performance, reliability, and uniformity. These devices fea-
ture a recessed 0.3 micron gate and triple epitaxial technol-
ogy.

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER NE76038
PACKAGE OUTLINE 38

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

NFOPT1 Optimum Noise Figure at VDS = 3 V, IDS = 10 mA

f = 4 GHz dB 0.8 1.2
f = 12 GHz dB 1.8
GA Associated Gain at VDS = 3 V, IDS = 10 mA
f = 4 GHz dB 12.0 13.0
f = 12 GHz dB 7.5
IDSS Saturated Drain Current at VDS = 3 V, VGS = 0 V mA 15 30 50
VP Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA V -3.0 -0.8 -0.5
gm Transconductance at VDS = 3 V, IDS = 10 mA mS 30 40 70
IGSO Gate to Source Leakage Current at VGS = -3 V µA 10
Note:
1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit
with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go"
screening test with the fixture tuned for the "generic" type but not for each specimen.

California Eastern Laboratories

NE76038

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 3 V, IDS = 10 mA
SYMBOLS PARAMETERS UNITS RATINGS
FREQ. NFOPT GA ΓOPT
VDS Drain to Source Voltage V 5 (GHz) (dB) (dB) MAG ANG1 Rn/50

VGD Gate to Drain Voltage V -5 0.5 0.40 21.67 0.84 5 0.79

VGS Gate to Source Voltage V -3 1.0 0.45 20.01 0.82 10 0.75

2.0 0.60 18.88 0.76 28 0.70
IDS Drain Current mA IDSS
4.0 0.80 15.53 0.66 58 0.61
PIN RF Input (CW) dBm +15
6.0 1.10 13.24 0.55 101 0.50
TCH Channel Temperature °C 150
8.0 1.35 11.32 0.50 152 0.40
TSTG Storage Temperature °C -65 to +150
10.0 1.60 9.49 0.48 -166 0.31
PT Total Power Dissipation mW 240 12.0 1.80 8.15 0.54 -130 0.25
RTH2, 3 Thermal Resistance °C/W 1250 14.0 2.10 7.11 0.63 -105 0.20
Notes: 16.0 2.30 6.54 0.70 -87 0.15
1. Operation in excess of any one of these parameters may result in 18.0 2.55 5.68 0.77 -75 0.12
permanent damage.
2. RTH for plastic package mounted on glass epoxy substrate is Note:
965°C/W. 1. ΓOPT is referenced to the bend of the lead, as shown on back page.
3. RTH for chip mounted on copper heat sink is 190°C/W.

TYPICAL PERFORMANCE CURVES (TA = 25°C)

DRAIN CURRENT vs.
TOTAL POWER DISSIPATION vs. GATE TO SOURCE VOLTAGE
AMBIENT TEMPERATURE VDS = 3 V

300 35
Total Power Dissipation, PT (mW)

250 30
Drain Current, IDS (mA)

25
200 Infinite
Heat Sink
20
150
15
Free Air
100
10

50
5

0 0

0 25 50 75 100 125 150 175 200 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5

Ambient Temperature, TA (°C) Gate to Source Voltage, VGS (V)

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE
50

40
Drain Current, IDS (mA)

VGS = 0 V
30

-0.2 V
20

10 -0.4 V

-0.6 V
0

0 1 2 3 4 5

Drain to Source Voltage, VDS (V)