TGA2524-SM

Ku Band GaAs Driver Amplifier

General Description
The Qorvo TGA2524-SM is a Ku-Band GaAs Power
Amplifier. The TGA2524-SM operates from 11.3 – 16 GHz
and is designed using Qorvo’s power pHEMT production
process.

TGA2524-SM has a typical gain of 23dB, and can deliver

26.5 dBm of saturated output power and 26dBm at P1dB.
It is a high linearity part with output TOI of 37dBm at 8dBm
output per tone.

The TGA2524-SM is available in a low-cost, surface mount

16 lead 3x3 QFN overmold package and is ideally suited
for Point-to-Point Radio applications.

Functional Block Diagram

16 15 14 13
Product Features
• Frequency Range: 11.3 – 16 GHz 1 12
• Psat: 26.5 dBm
2 11
• P1dB: 26 dBm
• Gain: 23 dB, good gain flatness with regulation 3 10
• OTOI: 37 dBm at 8 dBm Pout/tone
• NF: 7 dB 4 9
• Bias: Vd = 5 V, Idq = 320 mA, Vg = -0.52 V Typical
• Package Dimensions: 3.0 x 3.0 x 0.85 mm
5 6 7 8
Performance is typical across frequency.
Please reference electrical specification table and data
plots for more details.

Applications Ordering Information

• Point-to-Point Radio Part No. Description
• Ku-band Sat-Com TGA2524-SM TGA2524-SM, Driver Amplifier
1078986 TGA2524-SM Tape and Reel 7", Qty 1000
TGA2524-SMEVB02 TGA2424-SM Evaluation Board, Qty 1

Data Sheet Rev. H, May 2020 | Subject to change without notice - 1 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier
Absolute Maximum Ratings
Parameter Min Value Max Value Units
Drain Voltage, Vd - 8 V
Gate Voltage, Vg -2 0 V
Drain to Gate Voltage, Vd – Vg - 12 V
Drain Current, Id - 450 mA
Gate Current, Ig -8.2 10 mA
Power Dissipation, Pdiss - 3.6 W
RF Input Power, CW, T = 25ºC - 19 dBm
Channel Temperature, Tch - 200 °C
Mounting Temperature (30 Seconds) - 260 °C
Storage Temperature -40 150 °C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and
functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions may
reduce device reliability.

Recommended Operating Conditions

Parameter Value Units
Drain Voltage 5 V
Drain Current (quiescent, IDQ) 320 mA
Gate Voltage (typical) −0.52 V
Operating Temperature Range −40 to 85  °C

Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating
conditions.

Electrical Specifications
Test Conditions unless otherwise stated: VD = 5V, IDQ = 320mA, 25 °C. Data de-embedded to device reference planes
Parameter Min Typical Max Units
Frequency 11.3 16 GHz
Small Signal Gain (11.3 to 12 GHz) 16 20 dB
Small Signal Gain (12 to 16 GHz) 20 23 dB
Input Return Loss -12 -8 dB
Output Return Loss -15 -10 dB
Output Power at Saturation (11.3 to 12 GHz) 24 25 dBm
Output Power at Saturation (12 to 16 GHz) 25.5 26.5 dBm
Output Power at 1dB Compression (11.3 to 12 GHz) 23.5 24.5 dBm
Output Power at 1dB Compression (12 to 16 GHz) 25 26 dBm
Noise Figure 7 dB
Output TOI (@ Drain Current of 300 mA) 37 dBm
Gain Temperature Coefficient -0.035 dB/°C
Power Temperature Coefficient -0.007 dB/°C

Data Sheet Rev. H, May 2020 | Subject to change without notice - 2 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier
Performance Plots – Small Signal
Test Conditions unless otherwise stated: VD = 5 V, IDQ = 320 mA, 25 °C.

Gain vs. Frequency IRL, ORL vs. Frequency

Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 °C Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 °C
30 0

2524

Return Loss (dB)

-5
23.5
Gain (dB)

20 IRL
-10
ORL
15
14.37
-15
10 -17.5

5 -20-21
-23.3
0 13.75 14.5 -25 13.75 14.5
10 11 12 13 14 15 16 17 18 19 20 10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz) Frequency (GHz)

Output Power vs. Frequency Output Power, Gain, Id vs. Input Power
Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 oC Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 oC
29 35 550
Output Power (dBm), Gain (dB)

@ 14 GHz
Id held constant throughout the test 30 Id held constant throughout the test 500
Output Power (dBm)

28
25 450
27 20 400

Id (mA)
15 350
26
Psat 10 Pout 300
25 Gain
P1dB 5 250
Id
24 0 200
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 -10 -8 -6 -4 -2 0 2 4 6 8
Frequency (GHz) Input Power (dBm)

Output Power vs. Frequency Output Power, Gain, Id vs. Input Power
Vd = 5 V, Idq = 320 mA, Vg = -0.52 V, +25 oC Vd = 5 V, Idq = 320 mA, Vg = -0.52 V, +25 oC
29 35 550
Output Power (dBm), Gain (dB)

@ 14 GHz
30 500
Output Power (dBm)

28 26.4
25 450
27.35
27 20 400
26.4
Id (mA)

26.2 15 350
26
320
Psat 10 Pout 300
25 Gain
P1dB 5 250
Id
24 0 200
13.75 14.5
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 -10 -8 -6 -4 -2 0 2 4 6 8
Frequency (GHz) Input Power (dBm)

Data Sheet Rev. H, May 2020 | Subject to change without notice - 3 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier
Performance Plots – Small Signal
Test Conditions unless otherwise stated: VD = 5 V, IDQ = 320 mA, 25 °C.

OTOI vs. Frequency vs. Pout/Tone IM3 vs. Pout/Tone vs. Frequency
Vd = 5 V, Id = 320 mA, Vg = -0.52 V, +25 oC Vd = 5 V, Id = 320 mA, Vg = -0.52 V, 25 oC
38 0
Id held constant throughout the test
37 Id held constant throughout the test
-10
12.5 GHz
Output TOI (dBm)

36 -20
-25.4 13.5 GHz

IM3 (dBc)
35 -29
-30 14.5 GHz
34
12 dBm Pout/Tone -40 15.5 GHz
33
32 14 dBm Pout/Tone -50

31 16 dBm Pout/Tone -60

30 -70 20.6
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 0 2 4 6 8 10 12 14 16 18 20 22
Frequency (GHz) Pout/Tone (dBm)

Noise Figure vs. Frequency vs. Bias Noise Figure vs. Frequency vs. Bias
Vd = 5 V, Idq = 320 mA, Vg = -0.52 V, +25 °C Vd = 5-6 V, Id = 320 mA, Vg = -0.52 V, +25 °C
9 9

8 8
Noise Figure (dB)
NF (dB)

7 7

6 5V,300mA
6 4V,320mA
5V,320mA 5V,320mA
5 5
5V,350mA 6V,320mA
4 4
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17
Frequency(GHz) Frequency(GHz)

Gain vs. Frequency vs. Bias Gain vs. Frequency vs. Bias
o
Vd = 5 V, Id = 300-350 mA, Vg = -0.52 V, +25 C Vd = 5-6 V, Id = 320 mA, Vg = -0.52 V, +25 °C
25 26
24
24
23
Gain (dB)
Gain (dB)

22 22
5V,300mA
21 20 4V,320mA
5V,320mA
20 5V,320mA
5V,350mA 18
19 6V,320mA

18 16
11 12 13 14 15 16 17 11 12 13 14 15 16 17
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. H, May 2020 | Subject to change without notice - 4 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier
Performance Plots – Noise Figure
Test Conditions unless otherwise stated: VD = 5 V, IDQ = 320 mA, 25 °C.

Power vs. Frequency vs. Bias Power vs. Frequency vs. Bias
Vd = 5 V, Id = 300-350 mA, Vg = -0.52 V, +25 °C Vd = 4-6 V, Id = 320 mA, Vg = -0.52 V, +25 °C
28 30
Id held constant throughout the test 29 Id held constant throughout the test
Saturated Power (dBm)

Saturated Power (dBm)

27
28
26 27

5V,300mA
26
25 25
5V,320mA 4V,320mA
5V,350mA 24 5V,320mA
24
23 6V,320mA
23 22
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17
Frequency (GHz) Frequency (GHz)

Power vs. Frequency vs. Bias Power vs. Frequency vs. Bias
Vd = 5 V, Id = 300-350 mA, Vg = -0.52 V, +25 °C Vd = 4-6 V, Id = 320 mA, Vg = -0.52 V, +25 °C
28 29
Id held constant throughout the test Id held constant throughout the test
28
27
26.4
27
P1dB (dBm)

P1dB (dBm)

26.3
26 25.85 26 25.87
25.75
25.7
25.3 25
24.44
25 24
5V,300mA 4V,320mA
5V,320mA
23
24 5V,320mA
5V,350mA 22
6V,320mA
23 21 13.75 14.5
13.75 14.5
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17
Frequency (GHz) Frequency (GHz)

OTOI vs. Frequency vs. Bias OTOI vs. Frequency vs. Bias
o o
Vd = 5 V, Id = 300-350 mA, Vg = -0.52 V, +25 C Vd = 5-6 V, Id = 320 mA, Vg = -0.52 V, +25 C
40 38
39 Id held constant throughout the test Id held constant throughout the test
38 37
Output TOI (dBm)

Output TOI (dBm)

37
36 36
35
5V,320mA
34 35
5V,300mA
33 6V,320mA
32 5V,320mA 34
31 5V,350mA
30 33
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. H, May 2020 | Subject to change without notice - 5 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier
Performance Plots – Power
Test Conditions unless otherwise stated: VD = 5 V, IDQ = 320 mA, 25 °C.

Gain vs. Frequency vs. Temperature OTOI vs. Frequency vs. Temperature
Vd = 5 V, Id = 320 mA, Vg = -0.52 V Vd = 5 V, Id = 320 mA , Vg = -0.52 V
28 45
Id held constant throughout the test
26 40

Output TOI (dBm)

24 35
22 - 40 °C
30
Gain (dB)

20 +25 °C
- 40 °C 25
18 +80 °C
16 +25 °C 20
14 +80 °C 15
12 10
11 12 13 14 15 16 17 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17
Frequency (GHz) Frequency (GHz)

Power vs. Frequency vs. Temperature Power vs. Frequency vs. Temperature
Vd = 5 V, Idq = 320 mA, Vg = -0.52 V Vd = 5 V, Idq = 320 mA, Vg = -0.52 V
29 29
Saturated Output Power (dBm)

Id held constant throughout the

Id held constant throughout the test
28 test 28
27 27
P1dB (dBm)

26 26
25 - 40 °C 25
- 40 °C
24 +25 °C
24
+25 °C
+80 °C
23 23 +80 °C
22 22
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17
Frequency (GHz) Frequency (GHz)

Gain Regulated vs. Frequency

Vd = 5 V, Id & Vg regulated, 25 °C
40
35 Nominal, Id = 320mA, Vg = -0.52V
-6dB, Id = 61mA, Vg = -0.87V
30 -12dB, Id = 29mA, Vg = -0.95V
-18dB, Id = 16mA, Vg = -0.99V
Gain (dB)

25
23.12
20
16.87
15
10.6
10
5
4.37
0 14.5
13.75
11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17
Frequency (GHz)

Data Sheet Rev. H, May 2020 | Subject to change without notice - 6 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier
Application Circuit

Vd2

Vd1
Vd3

16 15 14 13

1 12

2 11
TGA2524-SM
3 10
RF IN RF OUT
4 9

5 6 7 8

Vg1

Vg3

Vg2

Bias-up Procedure Bias-down Procedure

1. Vg (externally connect Vg1, Vg2, and Vg3
1. Turn off RF signal
together) set to -1.5 V
2. Vd (externally connect Vd1, Vd2, and Vd3
2. Reduce Vg to -1.5V. Ensure Id ~ 0 mA
together) set to +5 V
3. Adjust Vg more positive until quiescent
3. Turn Vd to 0 V
current is 320 mA, Vg = -0.52 V typical
4. Apply RF signal to RF Input 4. Turn Vg to 0 V

Data Sheet Rev. H, May 2020 | Subject to change without notice - 7 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier
Evaluation Board and Assembly

RF Layer is 0.008” thick Rogers Corp. RO4003C (εr = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the
connector interface is optimized for the Southwest Microwave end launch connector 1092-01A-5.

Bill of Materials
Ref. Des. Component Value Manuf. Part Number
C1 - C6 Surface Mount CAP 1.0UF +/-5%, 16V, 1206, COG AVX 12063C105KAT2A
C7 - C12 Cap.
Surface Mount CAP 0.01UF +/-5%, 16V, 0603, COG AVX 06033C103KAT2A
J1, J2 Cap.
RF Connector 2.92 MM RF CONNECTOR Southwest Microwave 1092-01A-5
Microwave

Data Sheet Rev. H, May 2020 | Subject to change without notice - 8 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier
Mechanical Drawing & Pad Description

Dimensions in mm.
The package base is copper alloy and the plating material on the leads is matte Sn annealed.
Part Marking: 2524: Part Number, YY = Part Assembly Year, WW = Part Assembly Week, MXXX = Batch ID.

Pin Number Label Description

1, 2, 4, 8, 9, 11, 12, 16 N/C No internal connection. Recommend to GND at the PCB level
3 RF IN Matched to 50 ohms, DC blocked
5 Vg1 Gate Voltage; bias network is required (VG can be tied together at PCB)
6 Vg2 Gate Voltage; bias network is required (VG can be tied together at PCB)
7 Vg3 Gate Voltage; bias network is required (VG can be tied together at PCB)
10 RF OUT Matched to 50 ohms, DC blocked
13 Vd3 Drain Voltage; bias network is required (VD can be tied together at PCB)
14 Vd2 Drain Voltage; bias network is required (VD can be tied together at PCB)
15 Vd1 Drain Voltage; bias network is required (VD can be tied together at PCB)
17 GND Ground Pedestal

Data Sheet Rev. H, May 2020 | Subject to change without notice - 9 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier
Thermal and Reliability Information
Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1)
Tbase = 90 °C 31.1 °C/W
Channel Temperature (TCH) Vd = 5 V, Id = 320 mA, Quiescent 140 °C
Median Lifetime (TM) Pdiss = 1.6 W 2.4E06 Hrs
Thermal Resistance (θJC) (1)
Tbase = 90 °C 31.1 °C/W
Channel Temperature (TCH) Vd = 5 V, Id = 375 mA, RF Pout = 26.5 dBm 134 °C
Median Lifetime (TM) Pdiss = 1.4 W 5.6E06 Hrs

Notes:
1. Thermal resistance is referenced to back of the package.

Median Lifetime
Test Conditions: VD = 4 V
Failure Criteria = 10% reduction in ID_MAX

Median Lifetime (Tm) vs. Channel Temperature (Tch)

1E+15
1E+14
Median Lifetime, Tm (Hours)

1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET3
1E+04
25 50 75 100 125 150 175 200

Channel Temperature, Tch (°C)

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 TGA2524-SM
Ku Band GaAs Driver Amplifier

Solderability
1. Compatible with the latest version of J-STD-020, Lead-free solder (maximum 260 °C reflow temperature)
and tin-lead (maximum 245 °C reflow temperature) soldering processes.

Recommended Soldering Temperature Profile

Data Sheet Rev. H, May 2020 | Subject to change without notice - 11 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier

Tape and Reel Information

Standard T/R size = 1000 pieces on a 7" x 0.5" reel.

Distance Between Carrier Tape Cover

Centerline (mm) (mm) Carrier (mm)
Material Cavity (mm)

Length Width
Length Width Depth Pitch Width Width
Vendor Vendor P/N direction Direction
(A0) (B0) (K0) (P1) (W) (W)
(P2) (F)

QFN0400 X
C-Pack 3.4 3.2 1.4 4.0 2.0 3.5 8.0 5.4
0400D

Data Sheet Rev. H, May 2020 | Subject to change without notice - 12 of 13 - www.qorvo.com
 TGA2524-SM
Ku Band GaAs Driver Amplifier

Handling Precautions
Parameter Rating Standard
ESD – Human Body Model (HBM) 1A ESDA / JEDEC JS-001-2012
Caution!
ESD – Charged Device Model (CDM) TBD ESDA / JEDEC JS-002-2014 ESD-Sensitive Device
JEDEC standard IPC/JEDEC
MSL – Convection Reflow 260 °C 1
J-STD-020

RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU.

This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

Data Sheet Rev. H, May 2020 | Subject to change without notice - 13 of 13 - www.qorvo.com
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