TGA2578-CP

2 – 6 GHz 30 W GaN Power Amplifier

Product Description
Qorvo’s TGA2578-CP is a packaged wideband power
amplifier fabricated on Qorvo’s QGaN25 0.25um GaN on
SiC process. Operating from 2 to 6 GHz, the TGA2578-CP
achieves 30 W saturated output power with a power-added
efficiency of > 30 %, and > 26 dB small signal gain.

The TGA2578-CP is offered in a 10-lead 15.2 x 15.2 mm

bolt-down package. The package has a pure Cu base,
offering superior thermal management. The TGA2578-CP
is ideally suited to support both commercial and defense
applications.
Both RF ports have integrated DC blocking capacitors and
are fully matched to 50 Ohms.
Lead-free and RoHS compliant.
Product Features
• Frequency Range: 2 – 6 GHz
• POUT: 45 dBm @ PIN = 23 dBm
• PAE: >30% @ PIN = 23 dBm
• Small Signal Gain: > 26 dB
• IM3: -30 dBc @ 30 dBm Pout/Tone
• Bias: VD = +28 V, IDQ = 400 mA, VG = −2.8 V typical
• Package Dimensions: 15.2 x 15.2 x 3.5 mm
• Package base is pure Cu offering superior thermal
management

Performance is typical across frequency. Please

reference electrical specification table and data plots for
Functional Block Diagram more details

Applications
• Electronic Warfare
• Radar
• Communications
• Test Instrumentation
• EMC Amplifier

Ordering Information
Part No. Description
TGA2578-CP 2 – 6 GHz 30 W GaN Power Amplifier

1096052 TGA2578-CP Evaluation Board

Data Sheet Rev. E, June 2022 - 1 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Absolute Maximum Ratings Recommended Operating Conditions

Parameter Value / Range Parameter Min Typ. Max Units
Drain Voltage (VD) 40 V Drain Voltage (VD) +28 V
Gate Voltage Range (VG) −8 to 0 V Drain Current, (IDQ) 400 mA
Drain Current (ID) 5A Gate Voltage (VG) -2.8 Typical V
Gate Current (IG) See plot page 8 TBASE Range −40 +85 ºC
Power Dissipation (PDISS), 85°C 85 W Electrical specifications are measured at specified test
Input Power (PIN), 50Ω, 85°C, CW 27 dBm conditions. Specifications are not guaranteed over all
recommended operating conditions.
Input Power (PIN), 85°C, VSWR 3:1,
27 dBm
VD = 28V, CW
Input Power (PIN), 85°C, VSWR 10:1,
25 dBm
VD = 28V, CW
Refer to
Mounting Temperature Assembly
Notes, page 11
Storage Temperature −55 to 150 ºC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions is
not implied.

Electrical Specifications
Parameter Min Typ Max Units
Operational Frequency Range 2 6 GHz
Small Signal Gain >26 dB
Input Return Loss >12 dB
Output Return Loss >5 dB
Output Power (@ PIN = 23 dBm) 45 dBm
Power Added Efficiency (@ PIN = 23 dBm) >30 %
IM3 (Pout/tone = 30 dBm/Tone) -30 dBc
IM5 (Pout/tone = 30 dBm/Tone) -40 dBc
Small Signal Gain Temperature Coefficient −0.05 dB/°C
Output Power Temperature Coefficient -0.02 dBm/°C
Test conditions unless otherwise noted: 25 ºC, VD = +28 V, IDQ = 400 mA, VG = −2.8 V typical, CW.

Data Sheet Rev. E, June 2022 - 2 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Typical Performance – Large Signal

Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW.
Output Power vs. Frequency vs. VD Output Power vs. Frequency vs. Temp.
50 50
PIN = 23 dBm, Temp = 25 °C PIN = 23 dBm, Temp = 25 °C

45 45
Output Power (dBm)

Output Power (dBm)

40 40

25 V
35 35 -40 °C
28 V
30 V 25 °C
85 °C
30 30

25 25
1.5 2.5 3.5 4.5 5.5 6.5 1.5 2.5 3.5 4.5 5.5 6.5
Frequency (GHz) Frequency (GHz)

Output Power vs. Input Power vs. Temp.

50

45 -40 °C
Output Power (dBm)

25 °C
85 °C
40

35

30

4 GHz
25
0 5 10 15 20 25
Input Power (dBm)

Output Power vs. Input Power vs. VD Output Power vs. Input Power vs. Freq.
50 50
Temp = 25 °C, 4 GHz Temp = 25 °C

45 45
Output Power (dBm)

Output Power (dBm)

40 40

30 V 6 GHz
35 28 V 35 4 GHz
25 V 2 GHz

30 30

25 25
0 5 10 15 20 25 0 5 10 15 20 25
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. E, June 2022 - 3 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Typical Performance – Large Signal

Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW.
PAE vs. Frequency vs. VD Power Gain vs. Input Power vs. VD
50 34
Temp = 25 °C, 4 GHz
32
Power Added Efficiency (%)

45
30

Gain (dB)
40 28

26
35
30 V
28 V 24 30 V
30 25 V 28 V
22 25 V
PIN = 23 dBm, Temp = 25 °C
25 20
1.5 2.5 3.5 4.5 5.5 6.5 0 5 10 15 20 25
Frequency (GHz) Input Power (dBm)

PAE vs. Input Power vs. Freq. Power Gain vs. Input Power vs. Freq.
50 34
Temp = 25 °C
45
32
40
6 GHz
Gain (dB)
Power Added Efficiency (%)

35 4 GHz 30

30 2 GHz
28
25
26
20
15 24
10 6 GHz
22
5 4 GHz
Temp = 25 °C 2 GHz
0 20
0 5 10 15 20 25 0 5 10 15 20 25
Input Power (dBm) Input Power (dBm)

PAE vs. Frequency vs. Temp. Power Gain vs. Input Power vs. Temp.
50 34
PIN = 23 dBm
-40 °C
32
Power Added Efficiency (%)

45 25 °C
85 °C
Gain (dB)

30

40
28

26
35

-40 °C 24
30 25 °C
85 °C 22
4 GHz
25 20
1.5 2.5 3.5 4.5 5.5 6.5 0 5 10 15 20 25
Frequency (GHz) Input Power (dBm)

Data Sheet Rev. E, June 2022 - 4 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Typical Performance – Large Signal

Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW.
Drain Current vs. Frequency vs. VD Gate Current vs. Frequency vs. VD
4.0 35
PIN = 23 dBm, Temp = 25 °C PIN = 23 dBm, Temp = 25 °C
32
3.5
29
3.0 26

Gate Current (mA)

Drain Current (A)

23
2.5
30 V 20
2.0 28 V 17
25 V 14
1.5 30 V
11
28 V
1.0 8
25 V
5
0.5
2
0.0 -1
1.5 2.5 3.5 4.5 5.5 6.5 1.5 2.5 3.5 4.5 5.5 6.5
Frequency (GHz) Frequency (GHz)

Drain Current vs. Frequency vs. Temp. Gate Current vs. Frequency vs. Temp.
4.0 79
PIN = 23 dBm PIN = 23 dBm
3.5 69

3.0 59
Drain Current (A)

Gate Current (mA)

2.5 49

2.0 -40 °C 39 -40 °C

25 °C 25 °C
1.5 29 85 °C
85 °C
1.0 19

0.5 9

0.0 -1
1.5 2.5 3.5 4.5 5.5 6.5 1.5 2.5 3.5 4.5 5.5 6.5
Frequency (GHz) Frequency (GHz)

Drain Current vs. Input Power vs. Freq. Gate Current vs. Input Power vs. Temp.
4.0 35
6 GHz 32 2 GHz
3.5 4 GHz
29
2 GHz
3.0 26
Drain Current (mA)

23
Gate Current (mA)

2.5
20
2.0 17
-40 °C
14
1.5 25 °C
11 85 °C
1.0 8
5
0.5
Temp = 25 °C 2
0.0 -1
0 5 10 15 20 25 0 5 10 15 20 25
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. E, June 2022 - 5 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Typical Performance – Linearity

Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW.
2nd Harmonic vs. Output Power vs. Freq. 3rd Harmonic vs. Output Power. vs. Freq.
0 0
Temp = 25 °C
-10 -10 2 GHz
2 GHz
2f0 Output Power (dBc)

-20 -20

3f0 Output Power (dBc)

-30 -30
6 GHz
-40 -40

-50 4 GHz -50

-60 -60

-70 -70
4 GHz
-80 6 GHz -80

-90 -90
25 30 35 40 45 50 25 30 35 40 45 50
Fundamental Output Power (dBm) Fundamental Output Power (dBm)

IM3 vs. Frequency vs. Temperature IM5 vs. Frequency vs. Temperature
-20 -30

-25 -35
-40
-30 85 °C
85 °C
-45
-35
IM3 (dBc)

-50 25 °C
IM5 (dBc)

25 °C
-40 -55

-45 -60
-65
-50
-70
-55 -75
POUT = 30 dBm/Tone POUT = 30 dBm/Tone
-60 -80
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz) Frequency (GHz)

IM3 vs. Output Power vs. Frequency IM5 vs. Output Power vs. Frequency
-20 -30
2 GHz
-25 -35
4 GHz
6 GHz -40
-30
-45
-35
IM5 (dBc)

-50 2 GHz
IM3 (dBc)

4 GHz
-40 -55
6 GHz
-45 -60
-65
-50
-70
-55 -75
Temp = 25 °C Temp = 25 °C
-60 -80
10 15 20 25 30 35 40 10 15 20 25 30 35 40
Output Power per Tone (dBm) Output Power per Tone (dBm)

Data Sheet Rev. E, June 2022 - 6 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Performance Plots – Small Signal (CW)

Conditions unless otherwise specified: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical, CW.
Gain vs. Frequency vs. VD Gain vs. Frequency vs. Temp.
38 38
Temp = 25 °C

35 35

32 32
S21 (dB)

S21 (dB)
29 29

26 26
25 V -50 °C
28 V 25 °C
23 23
30 V 85 °C
32 V
20 20
1 2 3 4 5 6 7 1 2 3 4 5 6 7
Frequency (GHz) Frequency (GHz)

Input Return Loss vs. Frequency vs. VD Input Return Loss vs. Frequency vs. Temp.
0 0
-3 -3
-6 -6
-9 -9
-12 -12
S11 (dB)

S11 (dB)

-15 -15
-18 -18
-21 25 V -21 -50 °C
-24 28 V -24 25 °C
30 V 85 °C
-27 32 V -27
Temp = 25 °C
-30 -30
1 2 3 4 5 6 7 1 2 3 4 5 6 7
Frequency (GHz) Frequency (GHz)

Output Return Loss vs. Frequency vs. VD Output Return Loss vs. Freq. vs. Temp.
0 0
Temp = 25 °C
-3 -3
-6 -6
-9 -9
-12 -12
S22 (dB)

S22 (dB)

-15 -15
25 V
-18 28 V -18
-21 30 V -21 -50 °C
32 V 25 °C
-24 -24
85 °C
-27 -27
-30 -30
1 2 3 4 5 6 7 1 2 3 4 5 6 7
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. E, June 2022 - 7 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Thermal and Reliability Information

Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1) VD = 28 V, IDQ = 400 mA, Freq. = 5 GHz 1.29 ºC/W
Tbase = 85 °C, VD = 28 V, ID_Drive = 3 A,
Channel Temperature, TCH (Under RF) (2) PIN = 23 dBm, POUT = 44dBm, PDISS = 55 W 156 ºC

Notes:
1. Thermal resistance is referenced to the back of package (85 ºC)

2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Dissipated Power and Maximum Gate Current

Absolute Max. Gate Current vs. TCH
110
Absolute Maximum Gate Current (mA)

100
90
80
70
60
50
40
30
20
10
0
110 120 130 140 150 160 170 180
Channel Temperature (°C)

PDISS vs. Frequency vs. TBASE

70.0
PIN = 23 dBm, CW
60.0
Power Dissipation (W)

50.0

40.0 85 °C
25 °C
30.0 -40 °C

20.0

10.0

0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)

Data Sheet Rev. E, June 2022 - 8 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Applications Information and Pin Layout

C5
10 uF
R3
10 Ω C3 C9
0.1 uF 1 10 0.1 uF

2 9
Vg Vd
RF IN 3 8 RF OUT

4 7

C4 5 6 C10
R4 0.1 uF
10 Ω
0.1 uF
C6
10 uF

Notes:
1. VG must be biased from both sides (Pins 1 and 5)
2. VD must be biased from both sides (Pins 6 and 10)

Bias Up Procedure Bias Down Procedure

1. Set ID limit to 5 A, IG limit to 25 mA 1. Turn off RF supply
2. Apply −5 V to VG 2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Apply 28 V to VD; ensure IDQ is approx. 0 mA 3. Set VD to 0 V
4. Adjust VG until IDQ = 400 mA (VG ~ −2.8 V Typ.). 4. Turn off VD supply
5. Turn on RF supply 5. Turn off VG supply

Pin Description
Pad No. Symbol Description
Gate Voltage; Bias network is required; must be biased from both sides; see
1,5 VG
recommended Application Information above.
2,4,7,9 GND Must be grounded on the PCB.
3 RFIN Input; matched to 50 Ω; DC blocked
Drain voltage; Bias network is required; must be biased from both sides; see
6,10 VD
recommended Application Information above.
8 RFOUT Output; matched to 50 Ω; DC blocked.

Data Sheet Rev. E, June 2022 - 9 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Evaluation Board (EVB) Assembly Drawing

VG VD
GND GND GND

C5
R3 C9
C3

TGA2578-CP
YYWW ZZZ
MXXX

C4 C10
R4
C6

GND GND
VG VD
GND
PCB NOTES:
1. PCB is made from Rogers 4003C dielectric, 0.008 inch thick, 0.5 oz. copper both sides.
2. Both Top and Bottom VD and VG must be biased.

Bill of Materials
Reference Des. Value Description Manuf. Part Number
C3, C4, C9, C10 0.1 μF Cap, 0402, 50 V, 10%, X7R Various –
C5, C6 10 uF Cap, 1206, 50 V, 20%, X5R Various –
R3, R4 10 Ω Res, 0402, 5% Various –

Data Sheet Rev. E, June 2022 - 10 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Assembly Notes
1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully.
2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and
apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the
package.
3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not
control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat
sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz.,
then torque to final value. Use the following tightening pattern:

4. The component leads should be manually soldered. Apply a low residue solder alloy meeting J-STD-001 (ROL0,
ROL1 or equivalent) with a liquidus temperature below 220 C to each pin of the TGA2578-CP. The use of low
residue/no-clean flux (ROL0, ROL1) is recommended. Adding flux during hand soldering of the component leads
with localized spot cleaning is acceptable. Soldering irons meeting the requirements of J-STD-001, Appendix A are
acceptable. The packaged part should not be subjected to conventional SMT automated solder reflow processes.

Data Sheet Rev. E, June 2022 - 11 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Mechanical Information

Units: inches
Tolerances: (unless specified)
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Copper
Leads: Alloy 194
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
TGA2578-CP: Part number
YY: Part Assembly year
WW: Part Assembly week
ZZZ: Serial Number (unique for all parts within one assembly lot)
MXXX: Batch ID

Data Sheet Rev. E, June 2022 - 12 of 13 - www.qorvo.com

 TGA2578-CP
2 – 6 GHz 30 W GaN Power Amplifier

Handling Precautions
Parameter Rating Standard
ESD – Human Body Model (HBM) Class 1B JEDEC Standard JESD22 A114 Caution!
ESD – Charge Device Model (CDM) Class C1 JEDEC Standard JESD22-C101F ESD-Sensitive Device
MSL – Moisture Sensitivity Level N/A

Solderability
The component leads should be manually soldered, and the package cannot be subjected to conventional reflow
processes. The use of no-clean solder to avoid washing after soldering is recommended.

RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following
attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.

Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.

Copyright 2022 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

Data Sheet Rev. E, June 2022 - 13 of 13 - www.qorvo.com