CGHV38375F

400 W, 2.75 - 3.75 GHz, Internally-Matched, GaN on SiC Transistor (IM-FET)

Description
Wolfspeed's CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and
output ports. The CGHV38375F operates from 2.75 - 3.75 GHz providing coverage over the
entire S-Band radar band. This high-power amplifier provides >10 dB of large signal gain and
40% power-added efficiency and is ideally suited as a high-power building block supporting
both pulsed and CW radar applications.

PN: CGHV38375F
Package Type: 440226

Typical Performance Over 2.75 - 3.75 GHz (TC = 25˚C)

Parameter 2.75 GHz 2.9 GHz 3.3 GHz 3.5 GHz 3.75 GHz Units
Small Signal Gain 1,2
10.0 12.5 12.6 12.6 13.5 dB
Output Power1,3 55.9 57.4 57.5 57.7 56.8 dBm

Power Gain1,3 9.9 11.4 11.5 11.7 10.8 dB

Drain Efficiency1,3 50 67 62 60 60 %
Notes:
1
VDD = 50 V, IDQ = 500 mA
2
Measured at Pin = -10 dBm
3
Measured at Pin = 46 dBm and 100 μs; Duty Cycle = 10%

Features Applications
• Full S-Band Radar Coverge • Civil and Military, Pulsed
• 400 W Typical PSAT and CW S-Band Radar
• 55% Typical Drain Efficiency
• >10 dB Large Signal Gain
• Pulsed and CW Operation

Note: Features are typical performance across

frequency under 25°C, pulsed operation. Please
reference performance charts for additional
details.

Figure 1.

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 CGHV38375F 2
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter Symbol Rating Units Conditions
Drain-source Voltage VDSS 150 VDC 25°C
Gate-source Voltage VGS -10, +2 VDC 25°C
Storage Temperature TSTG -55, +150 ˚C
Maximum Forward Gate Current IG 80 mA 25°C
Maximum Drain Current IDMAX 24 A
Soldering Temperature TS 260 ˚C
Junction Temperature TJ 225 ˚C MTTF > 1e6 Hours

Electrical Characteristics (Frequency = 2.75 GHz to 3.75 GHz unless otherwise stated; TC = 25˚C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics
Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V VDS = 10 V, ID = 83.6 mA
Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDD = 50 V, IDQ = 500 mA
Saturated Drain Current1 IDS 54.4 77.7 – A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBD 125 – – V VGS = -8 V, ID = 83.6 mA
RF Characteristics 2

Small Signal Gain S211 – 12.5 – dB Pin = -10 dBm, Freq = 2.75 - 3.75 GHz
Output Power POUT1 – 55.9 – dBm VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 2.75 GHz
Output Power POUT2 – 57.4 – dBm VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 2.9 GHz
Output Power POUT3 – 57.5 – dBm VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 3.3 GHz
Output Power POUT4 – 57.7 – dBm VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 3.5 GHz
Output Power POUT5 – 56.8 – dBm VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm,Freq = 3.75 GHz
Drain Efficiency DE1 – 50 – % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 2.75 GHz
Drain Efficiency DE2 – 67 – % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 2.9 GHz
Drain Efficiency DE3 – 62 – % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 3.3 GHz
Drain Efficiency DE4 – 60 – % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 3.5 GHz
Drain Efficiency DE5 – 60 – % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 3.75 GHz
Power Gain GP2 – 9.9 – dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 2.75 GHz
Power Gain GP3 – 11.4 – dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 2.9 GHz
Power Gain GP4 – 11.5 – dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 3.3 GHz
Power Gain GP5 – 11.7 – dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 3.5 GHz
Power Gain GP6 – 10.8 – dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm, Freq = 3.75 GHz

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 CGHV38375F 3

Electrical Characteristics (Frequency = 2.75 GHz to 3.75 GHz unless otherwise stated; TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
RF Characteristics 2

Input Return Loss S11 – -6 – dB Pin = -10 dBm, 2.75 - 3.75 GHz
Output Return Loss S22 – -6 – dB Pin = -10 dBm, 2.75 - 3.75 GHz
Output Mismatch Stress VSWR – – 5:1 Y No damage at all phase angles
Notes:
1
Scaled from PCM data
2
Unless otherwise noted: Pulse Width = 100 µs, Duty Cycle = 10%

Thermal Characteristics
Parameter Symbol Rating Units Conditions
Operating Junction Temperature TJ 177 ˚C Pulse Width = 100 μs, Duty Cycle =10%,
PDISS = 418 W, TCASE = 85 ˚C
Thermal Resistance, Junction to Case RθJC 0.22 ˚C/W

Operating Junction Temperature TJ 185 ˚C

CW, PDISS = 200 W, TCASE = 85 ˚C
Thermal Resistance, Junction to Case RθJC 0.5 ˚C/W

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 CGHV38375F 4
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, Pulse Width = 100 μs, Duty Cycle = 10%, Pin = 46 dBm, TBASE = +25 °C

Figure 1. Output Power vs Frequency Figure 2. Output Power vs Frequency

as a Function of Temperature as a Function of Input Power

60

Output Power (dBm)

60
Output Power (dBm)

58 58
56 56
54 54
52 52 40 dBm
42 dBm
50 25 °C 50 44 dBm
85 °C 46 dBm
48 48 48 dBm
-40 °C
46 46
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

Figure 3. Drain Eff. vs Frequency Figure 4. Drain Eff. vs Frequency

as a Function of Temperature as a Function of Input Power
75 75
65 65
Drain Eff (%)
Drain Eff (%)

55 55

45 45

35 35
25 °C
25 85 °C 25 40 dBm 42 dBm 44 dBm 46 dBm 48 dBm

15 15
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

Figure 5. Drain Current vs Frequency Figure 6. Drain Current vs Frequency

as a Function of Temperature as a Function of Input Power
25 25

20 20
Drain Current (A)
Drain Current (A)

15 15

10 10
25 °C
5 85 °C 5 40 dBm 42 dBm 44 dBm 46 dBm 48 dBm
0 0
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

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 CGHV38375F 5
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, Pulse Width = 100 μs, Duty Cycle = 10%, Pin = 46 dBm, TBASE = +25 °C

Figure 7. Output Power vs Frequency Figure 8. Output Power vs Frequency

as a Function of VD as a Function of IDQ
Figure 7. – Output Power vs Frequency as a Function of VD
Figure 8. – Output Power vs Frequency as a Function of IDQ

60 60
Output Power (dBm)

58

Output Power (dBm)

58
56 56
54 54
52 52
50 V 1000 mA
50 45 V 50 500 mA
48 40 V 48 250 mA
46 46
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

Figure 9. Drain Eff. vs Frequency Figure 10. Drain Eff. vs Frequency

as a Function of VD as a Function of IDQ
75 75

65 65
Drain Eff (%)

Drain Eff (%)

55 55

45 45
50 V
45 V 1000 mA
35 35
40 V 500 mA
25 25 250 mA

15 15
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

Figure 11. Drain Current vs Frequency Figure 12. Drain Current vs Frequency
as a Function of VD as a Function of IDQ
25 25

20 20
Drain Current (A)
Drain Current (A)

15 15

10 10
50 V 1000 mA
45 V 500 mA
5 5
40 V
250 mA
0 0
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

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 CGHV38375F 6
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, Pulse Width = 100 μs, Duty Cycle = 10%, Pin = 46 dBm, TBASE = +25 °C

Figure 13. Output Power vs Input Power Figure 14. Drain Eff. vs Input Power
as a Function of Frequency as a Function of Frequency
65 70
60
Output Power (dBm)

60
55
50

Drain Eff. (%)

50
45 40
40 30
35 2.75 GHz 2.75 GHz
20 3.5 GHz
30 3.5 GHz
10 3.75 GHz
25 3.75 GHz
20 0
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48

Input Power (dBm) Input Power (dBm)

Figure 15. Large Signal Gain vs Input Power

as a Function of Frequency

20
LS Gain (dB)

15

10 2.75 GHz
3.5 GHz
3.75 GHz
5
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48

Input Power (dBm)

Figure 16. Drain Current vs Input Power Figure 17. Gate Current vs Input Power
as a Function of Frequency as a Function of Frequency
25 2.0
2.75 GHz
Gate Current (mA)
Drain Current (A)

20 1.5
3.5 GHz
1.0 3.75 GHz
15
0.5
10
2.75 GHz 0.0
5 3.5 GHz -0.5
3.75 GHz
0 -1.0
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48

Input Power (dBm) Input Power (dBm)

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 CGHV38375F 7
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, Pulse Width = 100 μs, Duty Cycle = 10%, Pin = 46 dBm, TBASE = +25 °C

Figure 18. Output Power vs Input Power Figure 19. Drain Eff. vs Input Power as a
as a Function of Temperature Function of Temperature
65 70
Output Power (dBm)

60 60
55

Drain Eff. (%)

50
50 85 °C
45 40
Frequency = 3.5 GHz 25 °C
40 -40 °C 30
35
20 25 °C
30 Frequency = 3.5 GHz
10 85 °C
25
20 0
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48

Input Power (dBm) Input Power (dBm)

Figure 20. Large Signal Gain vs Input Power

as a Function of Temperature
20
LS Gain (dB)

15

85 °C
10 Frequency = 3.5 GHz
25 °C
-40 °C

5
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48

Input Power (dBm)

Figure 21. Drain Current vs Input Power Figure 22. Gate Current vs Input Power
as a Function of Temperature as a Function of Temperature
25 2.0
85 °C
Gate Current (mA)

1.5
Drain Current (A)

20 Frequency = 3.5 GHz 25 °C

1.0 -40 °C
15
0.5
10
0.0
25 °C
5 -0.5
85 °C
Frequency = 3.5 GHz
0 -1.0
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48

Input Power (dBm) Input Power (dBm)

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 CGHV38375F 8
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, Pulse Width = 100 μs, Duty Cycle = 10%, Pin = 46 dBm, TBASE = +25 °C

Figure 23. Output Power vs Input Power Figure 24. Drain Eff. vs Input Power
as a Function of IDQ as a Function of IDQ
65 70
Output Power (dBm)

60
60
55

Drain Eff. (%)

50 50
45 40
40 30
35 1000 mA
1000 mA 20
30 Frequency = 3.5 GHz
500 mA 500 mA
Frequency = 3.5 GHz
25 10
250 mA 250 mA
20 0
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 18 23 28 33 38 43 48

Input Power (dBm) Input Power (dBm)

Figure 25. Large Signal Gain vs Input

Power as a Function of IDQ
20
LS Gain (dB)

15

10 1000 mA
Frequency = 3.5 GHz
500 mA
250 mA
5
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48

Input Power (dBm)

Figure 26. Drain Current vs Input Power Figure 27. Gate Current vs Input Power
as a Function of IDQ as a Function of IDQ
25 2.0
1000 mA
Gate Current (mA)

1.5
Drain Current (A)

20 Frequency = 3.5 GHz 500 mA

1.0 250 mA
15
0.5
10
1000 mA 0.0
5 500 mA
-0.5
Frequency = 3.5 GHz 250 mA
0 -1.0
18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48

Input Power (dBm) Input Power (dBm)

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 CGHV38375F 9
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, CW, Pin = 43 dBm, TBASE = +25 °C

Figure 28. Output Power vs Frequency Figure 29. Output Power vs Frequency
as a Function of Temperature
Figure 28. – Output Pow er vs Frequency as a Function of Temperature
as a Function of Input Power
56
Figure 29. – Output Pow er vs Frequency as a Function of Input Power

56
54
Output Power (dBm)

54

Output Power (dBm)

52 52
50 50
48 48
46 46
44 85 °C 44
42 25 °C 42 35 dBm 37 dBm 39 dBm 41 dBm 43 dBm
40 40
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

Figure 30. Drain Eff. vs Frequency Figure 31. Drain Eff. vs Frequency
as a Function of Temperature
Figure 30. – Drain Eff. Vs Frequency as a Function of Temperature as a Function of Input Power
Figure 31. – Drain Eff. Vs Frequency as a Function of Input Power

55 55
50 50
45 45
Drain Eff. (%)

Drain Eff. (%)

40 40
35 35
30 30
25 25
20 20
15 85 °C 15
10 25 °C 10 35 dBm 37 dBm 39 dBm 41 dBm 43 dBm
5 5
0 0
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

Figure 32. Drain Current vs Frequency Figure 33. Drain Current vs Frequency
as a Function of Temperature as a Function of Input Power
Figure 32. – Drain Current vs Frequency as a Function of Temperature

15
Figure 33. – Drain Current vs Frequency as a Function of Input Power

15
Drain Current (A)

Drain Current (A)

10
10

5 5
85 °C
25 °C 35 dBm 37 dBm 39 dBm 41 dBm 43 dBm
0 0
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

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 CGHV38375F 10
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, CW, Pin = 43 dBm, TBASE = +25 °C

Figure 34. Output Power vs Frequency Figure 35. Output Power vs Frequency
as a Function of Voltage
Figure 34. – Output Pow er vs Frequency as a Function of Voltage
as a Function of IDQ
56 Figure 35. – Output Pow er vs Frequency as a Function of IDQ

56
54
Output Power (dBm)

Output Power (dBm)

54
52 52
50 50
48 48
46 50 V 46
44 45 V 44 500 mA
40 V 250 mA
42 42

40 40
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

Figure 36. Drain Eff. vs Frequency Figure 37. Drain Eff. vs Frequency
as a Function of Voltage as a Function of IDQ
55 55
50 50
45 45
40 40
Drain Eff. (%)

Drain Eff. (%)

35 35
30 30
25 25
20 20
15 50 V 15 500 mA
10 45 V 10 250 mA
5 40 V 5
0 0
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

Figure 38. Drain Current vs Frequency Figure 39. Drain Current vs Frequency
as a Function of Voltage as a Function of IDQ
15 15
Drain Current (A)

Drain Current (A)

10 10

5 50 V 5
45 V 500 mA
40 V 250 mA
0 0
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9

Frequency (GHz) Frequency (GHz)

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 CGHV38375F 11
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, CW, Pin = 43 dBm, TBASE = +25 °C

Figure 40. Output Power vs Input Power Figure 41. Drain Eff. vs Input Power
as a Function of Frequency as a Function of Frequency
Figure 40. – Output Power vs Input Power as a Function of Frequency

65 55
60 50 2.75 GHz
Output Power (dBm)

45 3.5 GHz
55
40 3.75 GHz

Drain Eff. (%)

50 35
45 30
40 25
35 2.75 GHz 20
3.5 GHz 15
30
10
25 3.75 GHz
5
20 0
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43
Input Power (dBm) Input Power (dBm)

Figure 42. Large Signal Gain vs Input Power

as a Function of Frequency
20
2.75 GHz
3.5 GHz
15 3.75 GHz
Gain (dB)

10

5
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43
Input Power (dBm)

Figure 43. Drain Current vs Input Power Figure 44. Gate Current vs Input Power
as a Function of Frequency as a Function of Frequency
15 2.0
2.75 GHz
2.75 GHz
Gate Current (mA)

3.5 GHz 1.5 3.5 GHz

Drain Current (A)

3.75 GHz 3.75 GHz

10 1.0

0.5
5 0.0

-0.5
0 -1.0
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43
Input Power (dBm)
Input Power (dBm)

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 CGHV38375F 12
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, CW, Pin = 43 dBm, TBASE = +25 °C

Figure 45. Output Power vs Input Power Figure 46. Drain Eff. vs Input Power
as a Function of Temperature as a Function of Temperature
Figure 45. – Output Pow er vs Input Power as a Function of Temperature Figure 46. – Drain Eff. Vs Input Power as a Function of Temperature

65 55
60 50
Output Power (dBm)

55 45
50 40

Drain Eff. (%)

35
45
30
40 25
35 20
85 °C
30 15
25 °C 85 °C
25 10
25 °C
20 5
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 0
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43
Input Power (dBm)
Input Power (dBm)

Figure 47. Large Signal Gain vs Input Power

as a Function of Temperature
Figure 47. – Large Signal Gain vs Input Power as a Function of Temperature

20
85 °C
25 °C
15
Gain (dB)

10

5
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43

Input Power (dBm)

Figure 48. Drain Current vs Input Power Figure 49. Gate Current vs Input Power
as a Function of Temperature
Figure 48. – Drain Current vs Input Power as a Function of Temperature as a Function of Temperature
Figure 49. – Gate Current vs Input Power as a Function of Temperature

15 2.0
85 °C 85 °C
1.5
25 °C 25 °C
Gate Current (mA)
Drain Current (A)

10 1.0

0.5

5 0.0

-0.5

0 -1.0
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43

Input Power (dBm) Input Power (dBm)

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 CGHV38375F 13
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, CW, Pin = 43 dBm, TBASE = +25 °C

Figure 50. Output Power vs Input Power Figure 51. Drain Eff. vs Input Power
as a Function of IDQ
Figure 50. – Output Pow er vs Input Power as a Function of IDQ as a Function of IDQ
Figure 51. – Drain Eff. Vs Input Power as a Function of IDQ

65 55
Output Power (dBm)

60 50
55 45

Drain Eff. (%)

40
50 35
45 30
40 25
35 20
500 mA 15
30 10 500 mA
25 250 mA 250 mA
5
20 0
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43

Frequency (GHz) Input Power (dBm)

Figure 52. Large Signal Gain vs Input Power

as a Function of IDQ
Figure 52. – Large Signal Gain vs Input Power as a Function of IDQ

20
Gain (dB)

15

10
500 mA
250 mA
5
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43

Frequency (GHz)

Figure 53. Drain Current vs Input Power Figure 54. Gate Current vs Input Power
as a Function of IDQ
Figure 53. – Drain Current vs Input Power as a Function of IDQ as a Function of IDQ
Figure 54. – Gate Current vs Input Power as a Function of IDQ

15 2.0
500 mA
1.5
Gate Current (mA)
Drain Current (A)

250 mA
10 1.0

0.5

5 0.0
500 mA -0.5
250 mA
0 -1.0
13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43

Frequency (GHz) Input Power (dBm)

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 CGHV38375F 14
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, Pulse Width = 100 μs, Duty Cycle = 10%, Pin = 46 dBm, TBASE = +25 °C

Figure 55. 2nd Harmonic vs Frequency Figure 56. 3rd Harmonic vs Frequency
as a Function of Temperature as a Function of Temperature
-15 -15
-20 -19

3rd Harmonic (dBc)

-23
2nd Harmonic (dBc)

-25 -26
-30 -30
-35 -34
85 °C -38
-40 25 °C -41
-45 -40 °C -45
-49 85 °C
-50 25 °C
-53
-55 -56 -40 °C
-60 -60
2.7 2.9 3.1 3.3 3.5 3.7 3.9 2.7 2.9 3.1 3.3 3.5 3.7 3.9
Frequency (GHz)
Frequency (GHz)
Figure 57. 2nd Harmonic vs Output Power Figure 58. 3rd Harmonic vs Output Power
as a Function of Frequency as a Function of Frequency
-15 -15
-20
2nd Harmonic (dBc)

-20
3rd Harmonic (dBc)

2.75 GHz
-25 -25 3.5 GHz
-30 -30 3.75 GHz
-35 -35
-40 -40
-45 2.75 GHz -45
-50 3.5 GHz -50
-55 3.75 GHz -55
-60 -60
30 35 40 45 50 55 60 30 35 40 45 50 55 60

Output Power (dBm) Output Power (dBm)

Figure 59. 2nd Harmonic vs Output Power Figure 60. 3rd Harmonic vs Output Power
as a Function of IDQ as a Function of IDQ
-15 -15
-20 -20
3rd Harmonic (dBc)
2nd Harmonic (dBc)

-25 -25
-30 -30
-35 -35
-40 -40
-45 -45
1000 mA 1000 mA
-50 -50 500 mA
500 mA
-55 250 mA -55 250 mA
-60 -60
30 35 40 45 50 55 60 30 35 40 45 50 55 60

Output Power (dBm) Output Power (dBm)

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 CGHV38375F 15
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, Pin = -10 dBm, TBASE = +25 °C

Figure 61.61
Figure Gain vs Frequency
- Gain as a
vs. Frequency as a Figure 62.62
Figure Gain vs Frequency
- Gain as a as a
vs. Frequency
Function of Temperature
Function of Temperature Function of Temperature
Function of Temperature
20 20
15
10 15
Gain (dB)

Gain (dB)
0 10
-5 85C
85C
-10 25C 5 25C
-15 -40C -40C
-20 0
1.0 2.0 3.0 4.0 5.0 2.7 3.0 3.3 3.6 3.9
Frequency (GHz) Frequency (GHz)
Frequency (GHz) Frequency (GHz)

Figure 63 - Input Return Loss vs. Figure 64 - Input Return Loss vs.
Figure 63. Input RL vs Frequency as a FigureFrequency
64. Input RL as
vs Frequency asof
a
Frequency as a Function of a Function
Function of Temperature FunctionTemperature
of Temperature
Temperature
0 0
-2 -2
-4 -4
-6 -6
-8 -8
IRL (dB)
IRL (dB)

-10 -10
-12 85C -12
-14 -14 85C
25C
-16 -16 25C
-40C
-18 -18 -40C
-20 -20
1.0 2.0 3.0 4.0 5.0 2.7 3.0 3.3 3.6 3.9
Frequency (GHz)
Frequency (GHz) Frequency(GHz)
Frequency (GHz)

Figure 65 - Output Return Loss vs. Figure 66 - Output Return Loss vs.
Figure 65. Output RL vs Frequency as a Figure 66. Output RL vs Frequency as a
Frequency as a Function of Frequency as a Function of
Function of Temperature Function of Temperature
Temperature Temperature
0 0
-5 -5
-10 -10
ORL (dB)
ORL (dB)

-15 -15
-20 85C -20
85C
-25 25C -25
25C
-30 -40C -30
-40C
-35 -35
1.0 2.0 3.0 4.0 5.0 2.7 3.0 3.3 3.6 3.9
Frequency (GHz)
Frequency (GHz) Frequency (GHz)
Frequency (GHz)

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 CGHV38375F 16
Typical Performance of the CGHV38375F
Test conditions unless otherwise noted: VD = 50 V, IDQ = 500 mA, Pin = -10 dBm, TBASE = +25 °C

Figure 67.
Figure 67 Gain vsvs.
- Gain Frequency as a as a
Frequency Figure68
Figure 68.- Gain
Gainvs Frequency
vs. as aas a
Frequency
Function of Voltage
Function of Voltage Function of IDQ
Function of IDQ
20 20

15 15

Gain (dB)
Gain (dB)

10 10

50V 250mA
5 45V 5 500mA
40V 1000mA
0 0
2.7 3.0 3.3 3.6 3.9 2.7 3.0 3.3 3.6 3.9
Frequency (GHz)
(GHz) Frequency (GHz)
Frequency Frequency (GHz)

Figure 69. Input

Figure RL vs Frequency
69 - Input as avs.
Return Loss Figure 70. Input RL vs Frequency as a
Function
Frequency as aofFunction
Voltage of Voltage Figure 70Function
- Input Return
of IDQ Loss vs.
Frequency as a Function of IDQ
0 0
-2 -2
-4 -4
-6 -6
IRL (dB)
IRL (dB)

-8
IRL (dB)

-8
-10
-10
-12
50V -12
-14 250mA
45V -14
-16 500mA
40V -16
-18 1000mA
2.7 3.0 3.3 3.6 3.9 -18
Frequency (GHz) 2.7 3.0 3.3 3.6 3.9
Frequency (GHz) Frequency (GHz)
Frequency (GHz)

Figure 71. Output RL vs Frequency as a Figure 72. Output RL vs Frequency as a

Function of Voltage
Figure 71 - Output Return Loss vs. Frequency as a Function of Voltage
Figure 72 - Output Return Loss vs.
Function of IDQ
Frequency as a Function of Voltage
0 0
-5
-5
-10
ORL (dB)

-10 -15
ORL (dB)

-20
-15
-25
-20 50V -30
250mA
45V -35
-25 500mA
40V -40 1000mA
-30 -45
2.7 3.0 3.3 3.6 3.9 2.7 3.0 3.3 3.6 3.9
Frequency (GHz) Frequency (GHz)
Frequency (GHz) Frequency (GHz)

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 CGHV38375F 17
CGHV38375F-AMP Evaluation Board Schematic

CGHV38375F-AMP Evaluation Board Outline

9
8
7

4
3
2
6
5

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 CGHV38375F 18

CGHV38375F-AMP Evaluation Board Bill of Materials

Designator Description Qty

R1 RES, 511 OHM, +/- 1%, 1/16W,0603 1

R2, R4 RES, 5.1,OHM, +/- 1%, 1/16W,0603 2

R3 RES, 4.7 OHM, 1%, 1/4W, 1206 1

C1 CAP, 6.8pF, +/- 0.25 pF,250V, 0603 1

C2,C7,C8 CAP, 10pF, +/- 1%, 250V, 0805 3

C3 CAP, 10.0pF, +/-5%,250V, 0603, 1

C4,C9 CAP, 470PF, 5%, 100V, 0603, X 2

C5 CAP,33000PF, 0805,100V, X7R 1

C6 CAP 10UF 16V TANTALUM 1

C10 CAP, 1.0UF, 100V, 10%, X7R, 1210 1

C11 CAP, 33 UF, 20%, G CASE 1

C12 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1

C13 CAP, 1UF, 0805, 100V, X7S 1

J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2

J3 HEADER RT>PLZ .1CEN LK 9POS 1

J4 CONNECTOR ; SMB, Straight, JACK,SMD 1

W1 CABLE ,18 AWG, 4.2 1

PCB, RF35-TC, 2.5 X 4.0 X 0.030 1

BASEPLATE, AL, 4.0 X 2.5X 0.5 1

2-56 SOC HD SCREW 1/4 SS 4

#2 SPLIT LOCKWASHER SS 4

Q1 Transistor CGHV38375F 1

Electrostatic Discharge (ESD) Classifications

Parameter Symbol Class Test Methodology
Human Body Model HBM 1B (≥ 500 V) JEDEC JESD22 A114-D
Charge Device Model CDM II (≥ 200 V) JEDEC JESD22 C101-C

Moisture Sensitivity Level (MSL) Classification

Parameter Symbol Level Test Methodology
Moisture Sensitivity Level MSL 3 (168 hours) IPC/JEDEC J-STD-20

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 CGHV38375F 19
Product Dimensions CGHV38375F (Package 440226)

PIN DESC.
1 RFIN
2 RFOUT
3 SOURCE/FLANGE

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 CGHV38375F 20

Part Number System

CGHV38375F
Package, Power Test
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage

Table 1.
Parameter Value Units
Lower Frequency 2.75 GHz
Upper Frequency 3.75 GHz
Power Output 375 W
Package Flange -

Note1: Alpha characters used in frequency code indicate a value

greater than 9.9 GHz. See Table 2 for value.

Table 2.
Character Code Code Value
A 0
B 1
C 2
D 3
E 4
F 5
G 6
H 7
J 8
K 9
1A = 10.0 GHz
Examples:
2H = 27.0 GHz

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 CGHV38375F 21
Product Ordering Information

Order Number Description Unit of Measure Image

CGHV38375F GaN HEMT Each

CGHV38375F-AMP Test board with GaN HEMT installed Each

For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703
www.wolfspeed.com/RF

Sales Contact
RFSales@wolfspeed.com

RF Product Marketing Contact

RFMarketing@wolfspeed.com

Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury
or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

© 2021 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.

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