PVSYST V6.

29 07/09/15 08h29

Characteristics of a PV module
Manufacturer, model : Trina Solar, TSM-315PC14
Availability : Prod. from 2015
Data source : TSL,2015_09,PVEL
File : PS-M-0263 B PANFILE of TSM_315_PC14.PAN of 07/09/15 08h16

STC power (manufacturer) Pnom 315 Wp Technology Si-poly

Module size (W x L) 0.992 x 1.956 m² Rough module area Amodule 1.94 m²
Number of cells 1 x 72 Sensitive area (cells) Acells 1.75 m²

Specifications for the model (manufacturer or measurement data)

Reference temperature TRef 25 °C Reference irradiance GRef 1000 W/m²
Open circuit voltage Voc 45.6 V Short-circuit current Isc 9.00 A
Max. power point voltage Vmpp 37.0 V Max. power point current Impp 8.51 A
=> maximum power Pmpp 315.3 W Isc temperature coefficient muIsc 4.5 mA/°C

One-diode model parameters

Shunt resistance Rshunt 600 ohm Diode saturation current IoRef 0 nA
Serie resistance Rserie 0.40 ohm Voc temp. coefficient MuVoc 0 mV/°C
Diode quality factor Gamma 0.92
Specified Pmax temper. coeff. muPMaxR -0.41 %/°C Diode factor temper. coeff. muGamma 0.000 1/°C

Reverse Bias Parameters, for use in behaviour of PV arrays under partial shadings or mismatch
Reverse characteristics (dark) BRev 3.20 mA/V² (quadratic factor (per cell))
Number of by-pass diodes per module 3 Direct voltage of by-pass diodes -0.7 V
PV module: Trina Solar, TSM-315PC14

10
Cells temp. = 25 °C
Incident Irrad. = 1000 W/m²
315.3 W

Incident Irrad. = 800 W/m²

253.8 W

6
Incident Irrad. = 600 W/m²
Current [A]

190.8 W

4
Incident Irrad. = 400 W/m²
126.4 W

2 Incident Irrad. = 200 W/m² 61.3 W

0
0 10 20 30 40 50
Voltage [V]

PVsyst Licensed to Changzhou Trina Solar Energy Co., Ltd. (China)