PD - 97437A

IRF9310PbF
HEXFET® Power MOSFET

VDS -30 V 6   '

RDS(on) max
4.6 mΩ 6   '
(@VGS = 10V)
6   '
ID
-20 A *   '
(@TA = 25°C)
SO-8

Applications
• Charge and Discharge Switch for Notebook PC Battery Application

Features and Benefits

Features Resulting Benefits

Low RDSon (≤ 4.6mΩ) Lower Conduction Losses

results in
Industry-Standard SO8 Package Multi-Vendor Compatibility
⇒
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier

Orderable part number Package Type Standard Pack Note

Form Quantity
IRF9310PbF SO8 Tube/Bulk 95
IRF9310TRPbF SO8 Tape and Reel 4000

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage -30
V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V -20
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -16 A
IDM Pulsed Drain Current c -160
PD @TA = 25°C Power Dissipation f 2.5
W
PD @TA = 70°C Power Dissipation f 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150
°C
TSTG Storage Temperature Range

Notes  through … are on page 2

www.irf.com 1
03/19/2010
IRF9310PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.020 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) ––– 3.9 4.6 VGS = -10V, ID = -20A e
Static Drain-to-Source On-Resistance
––– 5.8 6.8
mΩ
VGS = -4.5V, ID = -16A e
VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V
VDS = VGS, ID = -100µA
∆VGS(th) Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– -1.0 VDS = -24V, VGS = 0V
µA
––– ––– -150 VDS = -24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
nA
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
gfs Forward Transconductance 39 ––– ––– S VDS = -10V, ID = -16A
Qg Total Gate Charge h ––– 58 ––– nC VDS = -15V, VGS = -4.5V, ID = - 16A
Qg Total Gate Charge h ––– 110 165 VGS = -10V
Qgs Gate-to-Source Charge h ––– 17 ––– nC VDS = -15V
Qgd Gate-to-Drain Charge h ––– 28 ––– ID = -16A
RG Gate Resistance h ––– 2.8 ––– Ω
td(on) Turn-On Delay Time ––– 25 ––– VDD = -15V, VGS = -4.5V e
tr Rise Time ––– 47 ––– ID = -1.0A
ns
td(off) Turn-Off Delay Time ––– 65 ––– RG = 1.8Ω
tf Fall Time ––– 70 ––– See Figs. 20a &20b
Ciss Input Capacitance ––– 5250 ––– VGS = 0V
Coss Output Capacitance ––– 1300 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 880 ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 630 mJ
IAR Avalanche Current c ––– -16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
––– ––– -2.5
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -160
(Body Diode) c p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V e
trr Reverse Recovery Time ––– 71 107 ns TJ = 25°C, IF = -2.5A, VDD = -24V
Qrr Reverse Recovery Charge ––– 12 18 nC di/dt = 100A/µs e
Thermal Resistance
Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead g ––– 20
RθJA Junction-to-Ambient f ––– 50
°C/W

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 4.9mH, RG = 25Ω, IAS = -16A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.

2 www.irf.com
 IRF9310PbF
1000 1000
≤60µs PULSE WIDTH VGS
≤60µs PULSE WIDTH
VGS
TOP -10V TOP -10V
Tj = 25°C -4.5V Tj = 150°C -4.5V
-3.5V -3.5V
-ID, Drain-to-Source Current (A)

100

-ID, Drain-to-Source Current (A)

-3.1V -3.1V
-2.9V -2.9V
-2.7V -2.7V
-2.5V 100 -2.5V
10 BOTTOM -2.3V BOTTOM -2.3V

1
10

0.1
-2.3V
-2.3V
0.01 1
0.1 1 10 100 0.1 1 10 100
-V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 1.6
ID = -20A

RDS(on) , Drain-to-Source On Resistance

VGS = -10V
-I D, Drain-to-Source Current (Α)

1.4

100
1.2
(Normalized)

T J = 150°C
1.0
10
T J = 25°C

0.8
VDS = -10V
≤60µs PULSE WIDTH
1.0 0.6
1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160

-V GS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

100000 14.0
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= -16A
C rss = C gd 12.0
-VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS= -24V

10.0 VDS= -15V
C, Capacitance(pF)

10000
Ciss
8.0
Coss

Crss 6.0
1000
4.0

2.0

100 0.0
1 10 100 0 25 50 75 100 125 150
-VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com 3
IRF9310PbF
1000.00 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec

-I D, Drain-to-Source Current (A)

-I SD, Reverse Drain Current (A)

100.00 100

1msec
T J = 150°C

10.00 10

T J = 25°C
1.00 1
T A = 25°C
10msec
Tj = 150°C
VGS = 0V Single Pulse
0.10 0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 1 10 100
-VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

20 2.5

-V GS(th), Gate threshold Voltage (V)

15
-I D, Drain Current (A)

2.0

10
ID = -100µA
1.5
5

0 1.0
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
T A , Ambient Temperature (°C) T J , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Ambient Temperature
100

D = 0.50
Thermal Response ( Z thJA ) °C/W

10 0.20
0.10
0.05
1 0.02
0.01

0.1

0.01

Notes:
0.001 SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + T A
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

4 www.irf.com
 IRF9310PbF
12 14
RDS(on) , Drain-to -Source On Resistance (mΩ)

RDS(on), Drain-to -Source On Resistance ( mΩ)

ID = -20A

12
10

10
8

8 VGS = -4.5V
6 TJ = 125°C
6
VGS = -10V
4
4
TJ = 25°C
2 2
2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 160

-V GS, Gate -to -Source Voltage (V) -I D, Drain Current (A)

Fig 12. On-Resistance vs. Gate Voltage Fig 13. Typical On-Resistance vs. Drain Current

2700 1000
EAS , Single Pulse Avalanche Energy (mJ)

ID
2400
TOP -1.8A
-2.7A 800
2100
BOTTOM -16A
Single Pulse Power (W)

1800
600
1500

1200
400
900

600 200
300

0 0
25 50 75 100 125 150 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Starting T J , Junction Temperature (°C) Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 16. Typical Power vs. Time

Driver Gate Drive

P.W.
D.U.T * + P.W.
Period D=
Period

ƒ VGS=10V*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • di/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* Reverse Polarity of D.U.T for P-Channel

* VGS = 5V for Logic Level Devices

Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
www.irf.com 5
IRF9310PbF

Id
Vds

Vgs

L
VCC
DUT
0
Vgs(th)
1K
SS
20K

Qgodr Qgd Qgs2 Qgs1

Fig 18a. Gate Charge Test Circuit Fig 18b. Gate Charge Waveform

VDS L
I AS

RG D.U.T
VDD
IAS A
-V
-20V
GS DRIVER
tp 0.01Ω

tp
V(BR)DSS
15V

Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms

RD
VDS
td(on) tr t d(off) tf
VGS VGS
D.U.T.
RG
10%
-
+ V DD

-VGS
Pulse Width ≤ 1 µs
90%
Duty Factor ≤ 0.1 % VDS

Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms

6 www.irf.com
 IRF9310PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)

,1&+(6 0,//,0(7(56
',0
' % 0,1 0$; 0,1 0$;
$  $    
$    
E    
    F    
 + '    
(
>@ $ (    
   
H %$6,& %$6,&
H  %$6,& %$6,&
+    
.    
; H
/    
\ ƒ ƒ ƒ ƒ

H .[ƒ
$
& \

>@
;E $ ;/ ;F

>@ & $ % 

)22735,17
127(6
;>@
',0(16,21,1* 72/(5$1&,1*3(5$60(<0
&21752//,1*',0(16,210,//,0(7(5
',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@
287/,1(&21)250672-('(&287/,1(06$$
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@ >@
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72
$68%675$7(

;>@ ;>@
SO-8 Part Marking Information

(;$03/(7+,6,6$1,5)026)(7
'$7(&2'(<::
3 ',6*1$7(6/($')5((
352'8&7237,21$/
< /$67',*,72)7+(<($5
;;;; :: :((.
,17(51$7,21$/ ) $ $66(0%/<6,7(&2'(
5(&7,),(5 /27&2'(
/2*2 3$57180%(5

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com 7
IRF9310PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

†
Qualification Information
Consumer ††
Qualification level
(per JEDEC JESD47F††† guidelines)
MSL1
Moisture Sensitivity Level SO-8
(per JEDEC J-STD-020D†††)
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comment
3/18/2010 Figure 16, Power vs. Time curve is modified and updated. All other parameters remain unchanged.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
8 www.irf.com