PD - 94983

IRF9Z34NPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
D
l 175°C Operating Temperature VDSS = -55V
l Fast Switching
l P-Channel
RDS(on) = 0.10Ω
l Fully Avalanche Rated G
l Lead-Free
ID = -19A
Description S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -19
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -14 A
IDM Pulsed Drain Current  -68
PD @TC = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
V GS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 180 mJ
IAR Avalanche Current -10 A
EAR Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt ƒ -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 2.2
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

02/05/04
IRF9Z34NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.10 Ω VGS = -10V, ID = -10A „
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = V GS, ID = -250µA
gfs Forward Transconductance 4.2 ––– ––– S VDS = 25V, I D = -10A
––– ––– -25 VDS = -55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 35 ID = -10A
Qgs Gate-to-Source Charge ––– ––– 7.9 nC VDS = -44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 16 VGS = -10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 13 ––– VDD = -28V
tr Rise Time ––– 55 ––– ID = -10A
ns
td(off) Turn-Off Delay Time ––– 30 ––– RG = 13Ω
tf Fall Time ––– 41 ––– RD = 2.6Ω, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 620 ––– VGS = 0V

Coss Output Capacitance ––– 280 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -19

(Body Diode) showing the
A
I SM Pulsed Source Current integral reverse G
––– ––– -68
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -10A, VGS = 0V „
trr Reverse Recovery Time ––– 54 82 ns TJ = 25°C, IF = -10A
Q rr Reverse RecoveryCharge ––– 110 160 nC di/dt = -100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 3.6mH
RG = 25Ω, IAS = -10A. (See Figure 12)
ƒ ISD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
 IRF9Z34NPbF

100 100 VGS

VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V

-ID , Drain-to-Source Current (A)

-ID , Drain-to-Source Current (A)

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOTTOM - 4.5V BOTTOM - 4.5V

10 10

-4.5V
-4.5V
20µs PULSE WIDTH 20µs PULSE WIDTH
Tc = 25°C TC = 175°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
-VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = -17A
R DS(on) , Drain-to-Source On Resistance
-ID , Drain-to-Source Current (A)

1.5
TJ = 25°C
TJ = 175°C
(Normalized)

10 1.0

0.5

VDS = -25V
20µs PULSE WIDTH VGS = -10V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

-VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
 IRF9Z34NPbF

1200 20
V GS = 0V, f = 1MHz I D = -10A
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd

-VGS , Gate-to-Source Voltage (V)

1000 VDS = -44V
C oss = C ds + C gd 16 VDS = -28V
C, Capacitance (pF)

800
Ciss
12

600 Coss

8
400
Crss
4
200

FOR TEST CIRCUIT

SEE FIGURE 13
0 A 0 A
1 10 100 0 10 20 30 40
-VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-ISD , Reverse Drain Current (A)

-I D , Drain Current (A)

10 100
TJ = 175°C 10µs

TJ = 25°C

100µs
1 10

1ms

TC = 25°C
TJ = 175°C 10ms
VGS = 0V Single Pulse
0.1 A 1 A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100
-VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF9Z34NPbF
20 RD
V DS

VGS
D.U.T.
15 RG -
ID , Drain Current (A)

+ VDD

-10V
10 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

5

td(on) tr t d(off) tf
VGS
10%
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)

90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

D = 0.50
1

0.20

0.10
0.05 PDM
0.1 0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9Z34NPbF

L 500
VDS ID

E AS , Single Pulse Avalanche Energy (mJ)

TOP -4.2A
-7.2A
RG D.U.T 400 BOTTOM -10A
VDD
IAS A
-20V DRIVER
tp 0.01Ω
300

200
15V

100
Fig 12a. Unclamped Inductive Test Circuit

0 A
25 50 75 100 125 150 175
I AS Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF9Z34NPbF
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" V DD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

[ISD ]
Ripple ≤ 5%

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS
IRF9Z34NPbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) LEAD ASSIGNMENTS
MIN HEXFET IGBTs, CoPACK
1 - GATE
1 2 3 2 - DRAIN
1- GATE 1- GATE
2- DRAIN
3 - SOURCE 2- COLLECTOR
3- SOURCE
4 - DRAIN 3- EMITTER
4- DRAIN 4- COLLECTOR
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M 2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E XAMPL E : T HIS IS AN IR F 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL PAR T NU MB E R
IN T H E AS S E MB L Y LINE "C" R E CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

Data and specifications subject to change without notice.

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