SK60GB125

Absolute Maximum Ratings % , -. /)     

 
Symbol Conditions Values Units
IGBT
(0+ %1 , -. / 3-44 (
& %1 , 3-. / % , -. / .3 5
% , 64 / 7. 5
&89 &89, -  & 344 5
('0+ : -4 (

( , 744 (; ('0 < -4 (; %1 , 3-. / 34 ?
SEMITOP® 3 (0+ = >44 (
Inverse Diode
IGBT Module &" %1 , 3.4 / % , -. / .@ 5
% , 64 / 76 5
&"89 &"89, -  &" 5

SK60GB125 &"+9  , 34 ;     * %1 , 3.4 / ..4 5

Module
&89+ 5

Preliminary Data %*1 AB4 CCC D3.4 /

% AB4 CCC D3-. /
( 5) 3 C -.44 (
Features
 
   % , -. /)     
 
  
   Characteristics
         Symbol Conditions min. typ. max. Units
 

    IGBT
 
 
 ('0 ('0 , (0) & , - 5 B). .). >). (
  


  &0+ ('0 , 4 () (0 , (0+ %1 , -. / 4)44> 5
 ! "  #$% &'% 
 &'0+ (0 , 4 () ('0 , -4 ( %1 , -. / 744 5
 (
)   *
 
 
(04 %1 , -. / 3)B 3)E (
Typical Applications* %1 , 3-. / 3)@ -)- (
 +
       0 ('0 , 3. ( %1 , -./ 7> F
 &*   %1 , 3-./ B7 F
 +
       (0  & , .4 5) ('0 , 3. ( %1 , -./
 *C 7)- 7)@ (
 !$+ %1 , 3-./
 *C 7)6. (
  7)7 "
  (0 , -.) ('0 , 4 (  , 3 9G 4). "
  4)-- "
 64 
 8' , 77 F ( , >44( >. 
0 &, B.5 6)7> H
 8' , 77 F %1 , 3-. / .7E 
 ('0,:3.( -- 
0 7)7- H
81A   &'% 4)> IJK

GB

1 12-05-2008 DIL © by SEMIKRON

SK60GB125
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
(" , (0 &" , .4 5; ('0 , 4 ( %1 , -. /
 *C - (
%1 , 3-. /
 *C 3)6 (
("4 %1 , -. / (
%1 , 3-. / 3 3)- (
" %1 , -. / F
%1 , 3-. / 3> -- F
® &889 &" , .4 5 %1 , 3-. / B4 5
SEMITOP 3 L J , A644 5J? 6 ?
0 (, >44( - H
IGBT Module 81A    4)E IJK

9    M -)-. -). #

 74 
SK60GB125

Preliminary Data This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.

Features * The specifications of our components may not be considered as an assurance of

component characteristics. Components have to be tested for the respective
 
   application. Adjustments may be necessary. The use of SEMIKRON products in
  
   life support appliances and systems is subject to prior specification and written
         approval by SEMIKRON. We therefore strongly recommend prior consultation of
 

    our personal.
 
 

  


 
 ! "  #$% &'% 

 (
)   *
 
 
Typical Applications*
 +
      
 &*  
 +
      
 !$+

GB

2 12-05-2008 DIL © by SEMIKRON

SK60GB125

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'

Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 6 Typ. gate charge characteristic

3 12-05-2008 DIL © by SEMIKRON

SK60GB125

Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 10 CAL diode forward characteristic

4 12-05-2008 DIL © by SEMIKRON

SK60GB125
UL recognized file no. E 63 532

  %-@ +       )   $)       

 N -

  % -@ '

5 12-05-2008 DIL © by SEMIKRON