Chap7 PDF

Chapter 7:
FET Biasing
Basic Current Relationships
For all FETs:

IG  0A
ID IS
For JFETS and D-Type MOSFETs:

2
 VGS 
I D  I DSS  1  
 VP 
For E-Type MOSFETs:
I D  k(V GS  VT ) 2
Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc.
Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved.
Fixed-Bias Configuration
I G  0A
V DS V DD  I D R D
V S  0, V D V DS , V GS  VGG

2
 VGS
I D  I DSS  1  Network for dc analysis.
 Vp 
Fixed-Bias Configuration –Graphical Solution

2
 V
I D  I DSS  1 GS 
 Vp 
Finding the solution for the

Plotting Shockley’s equation. fixed-bias configuration.
Example 7.1
Find VGSQ, IDQ, VDS, VD, VG, VS.
Example 7.1
Example 7.1
Self-Bias Configuration
DC analysis of the self-bias

configuration.
Self-Bias Configuration
V GS  I D RS
2
 V 
I D  I DSS  1 GS 
 Vp 
ID R S 
2
 
I D  I DSS  1 V 
 p 
 I D RS 
2
I D  I DSS  1 
 V p 
By squaring and rearranging, ID has the form:
I D2  k 1I D  k 2  0 [Solve for ID ] DC analysis of the self-bias
configuration.
Self-Bias Configuration – graphical solution
•Sketch the transfer curve.
•Draw the line:
VGS  I D R S
•The Q-point is located where

the line intersects the transfer
curve.
•Use the value of ID at the Q-
point (IDQ) to solve for the
other voltages:
V DS V DD  I D (RS  R D )
V S  I D RS
V D V DS V S
Example 7.2
Solution
Draw the line: VGS  I D R S
Example 7.2 - solution
Sketching the device Determining the Q-point

characteristics for the JFET for the network.
Voltage-Divider Bias
IG = 0A
IR1=IR2 Redrawn network for dc analysis.
VG is equal to the voltage across
divider resistor R2:
R 2VDD
VG 
R1  R 2
Using Kirchhoff’s Law:

VGS  VG  I D R S
The Q point is established by

plotting a line that intersects the
transfer curve.
Step 1 VGS  VG  I D R S
Plot the line by plotting two
points:
•VGS = VG, ID = 0 A
•VGS = 0 V, ID = VG /RS
Step 2
Plot the transfer curve by plotting
IDSS, VP and the calculated values
of ID
Step 3
The Q-point is located where the
line intersects the transfer curve
Effect of RS on the resulting Q-point.

Using the value of ID at the Q-point, solve for the other variables in
the voltage-divider bias circuit:
VDS  VDD  I D (RD RS )

VD  VDD  I D R D
VS  I D R S
VDD
IR1  IR2 
R1  R2
Example 7.5 Find VGSQ, IDQ, VDS, VD, VG, VS.
D-Type MOSFET Bias Circuits
Depletion-type MOSFET
bias circuits are similar to
those used to bias JFETs.
The only difference is that
depletion-type MOSFETs
can operate with positive
values of VGS and with ID
values that exceed IDSS.
Example 7.7 Find VGSQ, IDQ, VDS
Step 1
Plot the line for
•VGS = VG, ID = 0 A
•ID = VG/RS, VGS = 0 V
Step 2
Plot the transfer curve using IDSS, VP and
calculated values of ID.
Step 3
The Q-point is located where the line
intersects the transfer curve is. Use the ID at R 2VDD
the Q-point to solve for the other variables in VG 
R1  R 2
the voltage-divider bias circuit.
These are the same steps used to VGS  VG  I D R S

analyze JFET voltage-divider bias
circuits.
Example 7.7 - Solution
For V GS  1V

2
 V  1 
2
I D  I DSS 1 GS  =6mA1  10.67mA
 Vp   3 
10M (18V)
VG   1.5V V GS 1.5V  I D (750)
10M 110M
R 2VDD
VG  VGS  VG  I D R S
R1  R 2
Example 7.9 Find VGSQ, IDQ, VD
To plot line V GS  I D R S :
I D  V GS / R S
For V GS  6, I D  (6) / 2.4k  2.5mA
To plot transfer curve for VGS =+2V:
 VGS 
2
 2 
2
I D  I DSS  1  =8m  1  12.5mA
 Vp   8 
E-Type MOSFET Bias Circuits
The transfer characteristic for

the e-type MOSFET is very
different from that of a simple
JFET or the d-type MOSFET.
Feedback Bias Circuit
IG = 0 A
VRG = 0 V
VDS = VGS DC equivalent of the network
VGS = VDD – IDRD
Feedback Bias Q-Point
Step 1
Plot the line using
•VGS = VDD, ID = 0A
•ID = VDD / RD , VGS = 0 V
Step 2
Using values from the specification
sheet, plot the transfer curve with
•VGSTh , ID = 0A
•VGS(on), ID(on)
Step 3
The Q-point is located where the VGS = VDD – IDRD
line and the transfer curve intersect
Step 4
Using the value of ID at the Q-
point, solve for the other variables
in the bias circuit.
Find VGSQ, IDQ
Example 7.11
VGS (Th ) 2  0.2410 3 V
Plot Transfer Curve:
I D  k V GS GS  3 2
I D (on )
k 
V V GS (Th) 
2
GS (on )
6mA
k   0.24103
 
8  3 2
Example 7.11 - solution
Plot the line : VGS = VDD – IDRD
VGS = 12 – ID(2k)
Voltage-Divider Biasing
Plot the line and the transfer curve to find

the Q-point. Use these equations:
R 2VDD
VG 
R1  R 2
VDS  VDD  I D (R S  R D )
Example 7.12 Find VGSQ, IDQ
I D (on )
k 
V V GS (Th ) 
2
GS (on )
3mA
k   0.12103
10  52
VGS (Th ) 
I D  k V GS
2
I D  0.1210 3
VGS  5
2
18M (40V )
VG  18V
22M 18M
V GS V G  I D RS
V GS  18V  I D (0.82k )
Example 7.12 - Solution
I D  0.1210 3
VGS  5
2
V GS  18V  I D (0.82k )

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Chapter 7:

For all FETs:

For JFETS and D-Type MOSFETs:

For E-Type MOSFETs:

Finding the solution for the

DC analysis of the self-bias

•The Q-point is located where

Sketching the device Determining the Q-point

Using Kirchhoff’s Law:

The Q point is established by

Effect of RS on the resulting Q-point.

VDS  VDD  I D (RD RS )

These are the same steps used to VGS  VG  I D R S

The transfer characteristic for

Plot the line and the transfer curve to find

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