2N7000/2N7002, VQ1000J/P, BS170

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)

2N7000 5 @ VGS = 10 V 0.8 to 3 0.2

2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115

VQ1000J 60 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
BS170 5 @ VGS = 10 V 0.8 to 3 0.5

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 2.5 W
D Low Threshold: 2.1 V
D Low Input Capacitance: 22 pF
D Fast Switching Speed: 7 ns
D Low Input and Output Leakage
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays

TO-226AA TO-236
(TO-92) (SOT-23)

S 1

G 1

G 2 3 D

S 2
D
3

Top View
Top View Marking Code: 72wll
2N7000 72 = Part Number Code for 2N7002
w = Week Code
ll = Lot Traceability
Dual-In-Line

D1 D4
1 14

N S1 S4 N TO-92-18RM
2 13 (TO-18 Lead Form)
G1 G4
3 12
NC NC D 1
4 11

G2 G3
5 10
G 2
N S2 S3 N
6 9
D2 D3 S
7 8 3

Top View Top View

Plastic: VQ1000J BS170

Sidebraze: VQ1000P

Document Number: 70226 www.vishay.com

S-04279—Rev. F, 16-Jul-01 11-1
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Single Total Quad
Parameter Symbol 2N7000 2N7002 VQ1000J VQ1000P VQ1000J/P BS170 Unit
Drain-Source Voltage VDS 60 60 60 60 60
Gate-Source Voltage—Non-Repetitive VGSM "40 "40 "30 "25 V
Gate-Source Voltage—Continuous VGS "20 "20 "20 "20 "20

Continuous Drain Current TA= 25_C 0.2 0.115 0.225 0.225 0.5
ID
(TJ = 150_C) TA= 100_C 0.13 0.073 0.14 0.14 0.175 A
Pulsed Drain Currenta IDM 0.5 0.8 1 1
TA= 25_C 0.4 0.2 1.3 1.3 2 0.83
Power Dissipation PD W
TA= 100_C 0.16 0.08 0.52 0.52 0.8
Thermal Resistance, Junction-to-Ambient RthJA 312.5 625 96 96 62.5 156 _C/W
Operating Junction and
TJ, Tstg –55 to 150 _C
Storage Temperature Range

Notes
a. Pulse width limited by maximum junction temperature.
b. tp v 50 ms.

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
2N7000 2N7002

Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA 70 60 60
VDS = VGS, ID = 1 mA 2.1 0.8 3 V
Gate-Threshold Voltage VGS(th)
VDS = VGS, ID = 0.25 mA 2.0 1 2.5
VDS = 0 V, VGS = "15 V "10
Gate-Body Leakage IGSS nA
VDS = 0 V, VGS = "20 V "100
VDS = 48 V, VGS = 0 V 1
TC = 125_C 1000
Zero Gate Voltage Drain Current IDSS m
mA
VDS = 60 V, VGS = 0 V 1
TC = 125_C 500
VDS = 10 V, VGS = 4.5 V 0.35 0.075
On-State Drain Currentb ID(on) A
VDS = 7.5 V, VGS = 10 V 1 0.5
VGS = 4.5 V, ID = 0.075 A 4.5 5.3
VGS = 5 V, ID = 0.05 A 3.2 7.5
Drain-Source On-Resistanceb rDS(on) TC = 125_C 5.8 13.5 W
VGS = 10 V, ID = 0.5 A 2.4 5 7.5
TJ = 125_C 4.4 9 13.5
Forward Transconductanceb gfs VDS = 10 V, ID = 0.2 A 100 80
mS
Common Source Output Conductanceb gos VDS = 5 V, ID = 0.05 A 0.5

Dynamic
Input Capacitance Ciss 22 60 50
Output Capacitance Coss VDS = 25 V, VGS = 0 V 11 25 25 pF
f = 1 MHz
Reverse Transfer Capacitance Crss 2 5 5

www.vishay.com Document Number: 70226

11-2 S-04279—Rev. F, 16-Jul-01
 2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix

SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
2N7000 2N7002

Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Switchingd
Turn-On Time tON VDD = 15 V, RL = 25 W 7 10
Turn-Off Time tOFF ID ^0.5 A, VGEN = 10 V, RG = 25 W 7 10
ns
Turn-On Time tON VDD = 30 V, RL = 150 W 7 20
Turn-Off Time tOFF ID ^ 0.2 A, VGEN = 10 V, RG = 25 W 11 20

SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
VQ1000J/P BS170

Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 70 60 60
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3
VDS = 0 V, VGS = "10 V "100
Gate-Body Leakage IGSS TJ = 125_C "500 nA
VDS = 0 V, VGS = "15 V "10
VDS = 25 V, VGS = 0 V 0.5
Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C 500 mA
m
VDS = 60 V, VGS = 0 V 10
On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 1 0.5 A
VGS = 5 V, ID = 0.2 A 4 7.5
VGS = 10 V, ID = 0.2 A 2.3 5
Drain-Source On-Resistanceb rDS(on) W
VGS = 10 V, ID = 0.3 A 2.3 5.5
TJ = 125_C 4.2 7.6
VDS = 10 V, ID = 0.2 A 100
Forward Transconductanceb gfs
VDS = 10 V, ID = 0.5 A 100 mS
Common Source Output Conductanceb gos VDS =5 V, ID = 0.05 A 0.5

Dynamic
Input Capacitance Ciss 22 60 60
Output Capacitance Coss VDS =25 V, VGS = 0 V 11 25 pF
f = 1 MHz
Reverse Transfer Capacitance Crss 2 5

Switchingd
Turn-On Time tON VDD = 15 V, RL = 23 W 7 10
Turn-Off Time tOFF ID ^ 0.6 A, VGEN = 10 V, RG = 25 W 7 10
ns
Turn-On Time tON VDD = 25 V, RL = 125 W 7 10
Turn-Off Time tOFF ID ^ 0.2 A, VGEN = 10 V, RG = 25 W 7 10

Notes
a. For DESIGN AID ONLY, not subject to production testing. VNBF06
b. Pulse test: PW v80 ms duty cycle v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.

Document Number: 70226 www.vishay.com

S-04279—Rev. F, 16-Jul-01 11-3
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Output Characteristics Transfer Characteristics
1.0 1.0
6.5 V
VGS = 10, 9, 8, 7 V

0.8 6V 0.8
TJ = –55_C
5.5 V 25_C
ID – Drain Current (A)

ID – Drain Current (A)

0.6 0.6

5V
125_C
0.4 0.4
4.5 V

4V
0.2 0.2
3.5 V
3V 2.5 V
0.0 2, 1 V 0.0
0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8

VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

7 60
VGS = 0 V
f = 1 MHz
6
50
rDS(on) – On-Resistance ( Ω )

rDS @ 5 V = VGS
5
40
C – Capacitance (pF)

4
30
3 rDS @ 10 V = VGS Ciss

20
2 Coss

10
1
Crss

0 0
0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35

ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

20 2.0
ID = 0.5 A

16 VGS = 10 V, rDS @ 0.5 A

VGS – Gate-to-Source Voltage (V)

rDS(on) – On-Resistance ( Ω )

1.5
(Normalized)

12
VDS = 30 V
1.0
VGS = 5 V, rDS @ 0.05 A
8

0.5
4

0 0.0
0 400 800 1200 1600 2000 2400 –55 –30 –5 20 45 70 95 120 145

Qg – Total Gate Charge (pC) TJ – Junction Temperature (_C)

www.vishay.com Document Number: 70226

11-4 S-04279—Rev. F, 16-Jul-01
 2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1.000 6

5 ID = 50 mA

rDS(on) – On-Resistance ( Ω )
TJ = 125_C
IS – Source Current (A)

0.100 4 500 mA

3
TJ = 25_C

0.010 2

0.001 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage
0.50

ID = 250 mA
0.25
VGS(th) – Variance (V)

–0.00

–0.25

–0.50

–0.75
–50 –25 0 25 50 75 100 125 150

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)

1

Duty Cycle = 0.5

Normalized Effective Transient

0.2
Thermal Impedance

0.1 Notes:

0.05
0.1 PDM
0.02
t1
t2
t1
1. Duty Cycle, D =
0.01 t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse

0.01
0.1 1 10 100 1K 10 K
t1 – Square Wave Pulse Duration (sec)

Document Number: 70226 www.vishay.com

S-04279—Rev. F, 16-Jul-01 11-5
 Legal Disclaimer Notice
Vishay

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1