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Electrochemically Active Surface Zirconium We have previously exploited the reactivity of surface
Complexes on Indium Tin Oxide OH groups of metal oxides for surface functional group
quantification and modification using organometallic
Susan K. VanderKam, Ellen S. Gawalt, reagents,13-16 and we have reported that bonding of
Jeffrey Schwartz,* and Andrew B. Bocarsly* carboxylic acids to oxide surfaces can be stabilized using
zirconium alkoxide complex-derived interfaces.16,17 Be-
Department of Chemistry, Princeton University, Princeton,
New Jersey 08544-1009 cause of the ease of ligand metathesis in these surface-
bound alkoxides, they represent a versatile interface for
Received January 28, 1999. In Final Form: May 11, 1999 formation of families of surface-bound materials from a
Indium tin oxide (ITO) is a common transparent common, easy-to-prepare precursor.16,18,19 We now report
conductor1 which is widely used as an electrode material that these synthetic methodologies can be used to bond
in, for example, organic light-emitting diode2-4 (OLED) a simple, electrochemically active ferrocenecarboxylate
displays. It is generally acknowledged3,5-8 that inefficient derivative to the ITO surface via ligand metathesis at Zr
carrier injection from an ITO electrode into an organic in a process that obviates tedious tethering group synthesis
layer of an OLED can lead to device failure; it may be that and attachment. Happily, we find that the Zr complex
appropriate surface modification of ITO can be ac- interface does not deleteriously affect the electrochemical
complished to enhance such carrier injection and, con- behavior of the ligated ferrocenecarboxylate species.
sequently, device performance. Commercial ITO is usually Importantly, because the stoichiometries of Zr complex
characterized1 according to its physical parameters, surface chemisorption and subsequent ligand metathesis
including surface resistance, grain size, direct optical band are known, electrochemical quantitation of surface com-
gap, and etch capabilities, but not by its chemical ones. plex-bound ferrocenecarboxylate ligand groups provides
Indeed, despite the large number of reports concerning an indirect measure of ITO surface OH coverage.
device use of ITO,3,5-8 only few studies have focused on a
possibly key issue of ITO surface chemistry: surface Experimental Part
hydroxyl group density. It seems unlikely that interface Reagents. ITO-coated (one side only) glass slides (Delta
design involving these surface OH groups can be optimized Technologies) had a resistance <20.3 Ω/0. Tetra(tert-butoxy)-
for device applications until this simple aspect of the zirconium (1, Aldrich) was vacuum distilled and stored under
surface chemistry of ITO, at least, is better described. nitrogen prior to use. Diethyl ether or THF was dried by
distillation from sodium benzophenone ketyl. Dry acetonitrile
Attachment of ferrocenyl compounds onto ITO via a
(AN) was distilled from CaH2. All other reagents were used
silyl9,10 or alkanecarboxylic acid tethering functionality11 without further purification, unless stated otherwise.
has been reported as a method both to enhance the Cleaning Protocol for ITO-Coated Glass Slides.20 Slides
electrochemical performance of ITO and to determine the were cleaned first by ultrasonication in a solution of Contrad 70
number of electrochemically reactive sites bound per detergent (Fisher) for 30 min. They were rinsed copiously with
nominal unit area of ITO. Self-assembly of ferrocenylpyr- deionized H2O and then rinsed again three times each in boiling
role and -thiophene derivatives through hydrogen bonding trichloroethylene, acetone, and boiling methanol. The cleaned
with surface OH groups has also been described.12 In each slides were dried at 250 °C overnight and were stored in a
case, electrochemical determinations indicated surface desiccator prior to use.
coverage of ferrocenyl groups to be on the order of 10-10 Construction of ITO Electrodes. ITO-coated glass was cut
mol/cm2 (attributed to a “monolayer”10,11). However, the into 1 cm × 1.5 cm rectangles. Copper wire (20 gauge) was
attached to the top of each ITO side using single-component silver
surface density of reactive OH functionality on the ITO epoxy (Epo-Tek, H31), and the ensemble was cured overnight at
could not be estimated using these systems, since no 250 °C. The Cu-wire/ITO junction and the top 0.5 cm2 of the slide
information is available on the stoichiometry of the were covered with regular epoxy, leaving an active electrode
reaction between such functionality and the derivatization area of 1 cm2.
reagents. Preparation of [ITO]-[O]x-Zr(tert-butoxy)4-x (as a mix-
ture of 2 and 2′). Cleaned ITO-coated glass slides were exposed
(1) Chopra, K. L.; Major, S.; Pandya, D. K. Thin Solid Films 1983, to vapor of 1, as previously described, to give 2/2′ (see Scheme
102, 1-46. 1; IR: νC-H ) 2973 cm-1).17
(2) Tang, C. W.; VanSlyke, S. A. Appl. Phys. Lett. 1987, 51, 913-915. Preparation of Ferrocenecarboxylate Derivatives 3 and
(3) Forrest, S. R.; Burrows, P. E.; Thompson, M. E. In Laser Focus
World; PennWell Publishing Company: Tulsa, OK, 1995; Vol. 31, pp 3′. ITO electrode samples of 2/2′ were dipped in a 10-3 M solution
99-107. of ferrocenecarboxylic acid (FcCOOH; Aldrich) in dry diethyl ether
(4) Burrows, P. E.; Gu, G.; Bulović, V.; Shen, Z.; Forrest, S. R.; under an inert atmosphere for 30 min and then rinsed thoroughly
Thompson, M. E. IEEE Transactions on Electron Devices; Institute of to give 3/3′. Alternatively a 1 mM solution of FcCOOH in diethyl
Electrical and Electronics Engineers: New York, 1997; Vol. 44, pp 1188- ether was sprayed onto 2/2′ using N2; the solvent was then
1203. removed by evacuation. The sample was then washed once by
(5) Greenham, N. C.; Moratti, S. C.; Bradley, D. D. C.; Friend, R. H.;
Holmes, A. B. Nature 1993, 365, 628-630.
(6) Gautier, E.; Lorin, A.; Nunzi, J. M.; Schalchli, A.; Benattar, J. J.; (13) Miller, J. B.; Schwartz, J.; Bernasek, S. L. J. Am. Chem. Soc.
Vital, D. Proc. SPIEsInt. Soc. Opt. Eng. 1997, 3002, 104-107. 1993, 115, 8239-8247.
(7) Scott, J. C.; Carter, S. A.; Karg, S.; Angelopoulos, M. Proc. SPIEs (14) Miller, J. B. Princeton University, 1992.
Int. Soc. Opt. Eng. 1997, 3002, 86-91. (15) Miller, J. B.; Schwartz, J. Inorg. Chem. 1990, 29, 4579-4581.
(8) Antoniadis, H.; Miller, J. N.; Roitman, D. B.; Cambell, I. H. IEEE (16) Aronoff, Y. G.; Chen, B.; Lu, G.; Seto, C.; Schwartz, J.; Bernasek,
Trans. Electron Devices 1997, 44, 1289-1294. S. L. J. Am. Chem. Soc. 1997, 119, 259-262.
(9) Chen, K.; Herr, B.; Singewald, E. T.; Mirkin, C. A. Langmuir (17) VanderKam, S. K.; Bocarsly, A. B.; Schwartz, J. Chem. Mater.
1992, 8, 2585-2587. 1998, 10, 685-687.
(10) A similar study has been done for a cobalt complex. See, Herr, (18) Purvis, K. L.; Lu, G.; Schwartz, J.; Bernasek, S. L. Langmuir
B.; Mirkin, C. A. J. Am. Chem. Soc. 1994, 117, 6927-6933. 1998, 14, 3720-3722.
(11) Gardner, T. J.; Frisbie, C. D.; Wrighton, M. S. J. Am. Chem. Soc. (19) VanderKam, S. K.; Lu, G.; Bernasek, S. L.; Schwartz, J. J. Am.
1995, 117, 6927-6933. Chem. Soc. 1997, 119, 11639-11642.
(12) Zotti, G.; Schiavon, G.; Zecchin, S.; Berlin, A.; Pagani, G.; (20) Burrows, P. E.; Shen, Z.; Bulović, V.; McCarty, D. M. J. Appl.
Canavesi, A. Langmuir 1997, 13, 2964-2968. Phys. 1996, 79, 7991-8006.