IGNS IRF540, RF1S540SM

E W DES
T
OR N DUC
N D ED F TE PRO
MME BSTITU
R ECOSheet
Data SU 40N January 2002
NOT
S S IBLE IRF5
PO

28A, 100V, 0.077 Ohm, N-Channel Power Features

MOSFETs • 28A, 100V
These are N-Channel enhancement mode silicon gate
• rDS(ON) = 0.077Ω
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a • Single Pulse Avalanche Energy Rated
specified level of energy in the breakdown avalanche mode • Nanosecond Switching Speeds
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching • Linear Transfer Characteristics
convertors, motor drivers, relay drivers, and drivers for high • High Input Impedance
power bipolar switching transistors requiring high speed and
• Related Literature
low gate drive power. These types can be operated directly
- TB334 “Guidelines for Soldering Surface Mount
from integrated circuits.
Components to PC Boards”
Formerly developmental type TA17421.
Symbol
Ordering Information
D
PART NUMBER PACKAGE BRAND

IRF540 TO-220AB IRF540

G
RF1S540SM TO-263AB RF1S540SM

NOTE: When ordering, use the entire part number. Add the suffix 9A to S
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.

Packaging
JEDEC TO-220AB JEDEC TO-263AB

SOURCE
DRAIN
GATE DRAIN
GATE (FLANGE)
DRAIN (FLANGE) SOURCE

©2002 Fairchild Semiconductor Corporation IRF540, RF1S540SM Rev. B

 IRF540, RF1S540SM

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

IRF540, RF1S540SM UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 28 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 20 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 110 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 120 W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 230 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg 260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to TJ = 150oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 100 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V
Zero Gate Voltage Drain Current IDSS VDS = 95V, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BV DSS, VGS = 0V, TJ = 150oC - - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V (Figure 7) 28 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 17A, VGS = 10V (Figures 8, 9) - 0.060 0.077 Ω
Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 17A (Figure 12) 8.7 13 - S
Turn-On Delay Time td(ON) VDD = 50V, ID ≈ 28A, RG ≈ 9.1Ω, RL = 1.7Ω - 15 23 ns
Rise Time tr MOSFET Switching Times are - 70 110 ns
Essentially Independent of Operating
Turn-Off Delay Time td(OFF) Temperature - 40 60 ns
Fall Time tf - 50 83 ns
Total Gate Charge Qg(TOT) VGS = 10V, ID = 28A, VDS = 0.8 x Rated BV DSS , - 38 59 nC
(Gate to Source + Gate to Drain) Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially
Gate to Source Charge Qgs Independent of Operating Temperature - 8 - nC
Gate to Drain “Miller” Charge Qgd - 21 - nC
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz - 1450 - pF
Output Capacitance COSS (Figure 11) - 550 - pF
Reverse Transfer Capacitance CRSS - 100 - pF
Internal Drain Inductance LD Measured From the Modified MOSFET Symbol - 3.5 - nH
Contact Screw on Tab To Showing the Internal
Center of Die Devices Inductances
D
Measured From the Drain - 4.5 - nH
Lead, 6mm (0.25in) from LD
Package to Center of Die
Internal Source Inductance LS Measured From the G - 7.5 - nH
Source Lead, 6mm LS
(0.25in) From Header to
Source Bonding Pad S

Thermal Resistance Junction to Case RθJC - - 1.25 oC/W

Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 80 oC/W

RθJA RF1S540SM Mounted on FR-4 Board with Minimum - - 62 oC/W

Mounting Pad

©2002 Fairchild Semiconductor Corporation IRF540, RF1S540SM Rev. B

 IRF540, RF1S540SM

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET Symbol - - 28 A
Showing the Integral D
Pulse Source to Drain Current ISDM - - 110 A
(Note 3) Reverse P-N Junction
Diode
G

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 27A, VGS = 0V (Figure 13) - - 2.5 V
Reverse Recovery Time trr TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 70 150 300 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 0.2 1.0 1.9 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 440µH, RG = 25Ω, peak IAS = 28A.

Typical Performance Curves Unless Otherwise Specified

1.2 30
POWER DISSIPATION MULTIPLIER

1.0 24
ID, DRAIN CURRENT (A)

0.8
18

0.6
12
0.4

6
0.2

0
0 25 50 75 100 125 150 175
0 25 50 75 100 125 150 175
TC , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE

10
THERMAL IMPEDANCE (oC/W)
ZθJC, TRANSIENT

0.5

PDM
0.2

0.1 0.1
0.05 t1
t2
0.02 NOTES:
0.01 DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK TJ = PDM x ZθJC + TC
0.01
10-5 10-4 10-3 10-2 10-1 1 10
t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2002 Fairchild Semiconductor Corporation IRF540, RF1S540SM Rev. B

 IRF540, RF1S540SM

Typical Performance Curves Unless Otherwise Specified (Continued)

300
SINGLE PULSE PULSE DURATION = 80µs
TJ = MAX RATED DUTY CYCLE = 0.5% MAX
TC = 25o C 50
100
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

VGS = 7V
VGS = 10V
40 VGS = 8V

100µs
30 VGS = 6V
10
OPERATION IN THIS
AREA MAY BE 20
LIMITED BY rDS(ON) 1ms
VGS = 5V
10
10ms
VGS = 4V
1 0
1 10 100 300 0 12 24 36 48 60
VDS , DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

50 100
PULSE DURATION = 80µs PULSE DURATION = 80µs VDS ≥ 50V
ID(ON), ON-STATE DRAIN CURRENT (A)
DUTY CYCLE = 0.5% MAX VGS = 8V DUTY CYCLE = 0.5% MAX
40 VGS = 7V
ID, DRAIN CURRENT (A)

VGS = 10V 10
30
VGS = 6V

20
175oC 25oC
1
VGS = 5V
10

VGS = 4V
0
0.1
0 1 2 3 4 5 0 2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

1.0 3.0
PULSE DURATION = 80µs PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE

VGS = 10V, ID = 28A

rDS(ON), DRAIN TO SOURCE

0.8 2.4
ON RESISTANCE (Ω)

ON RESISTANCE

0.6 1.8

0.4 1.2

0.2 VGS = 10V 0.6

VGS = 20V
0 0
0 25 50 75 100 125 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (A) TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE

©2002 Fairchild Semiconductor Corporation IRF540, RF1S540SM Rev. B

 IRF540, RF1S540SM

Typical Performance Curves Unless Otherwise Specified (Continued)

1.25 3000
ID = 250µA VGS = 0V, f = 1MHz
NORMALIZED DRAIN TO SOURCE

CISS = CGS + CGD

1.15 2400 CRSS = CGD
COSS ≈ CDS + CGD
BREAKDOWN VOLTAGE

C, CAPACITANCE (pF)
1.05 1800
CISS

0.95 1200

COSS
0.85 600
CRSS

0.75 0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 1 10 100
TJ , JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE

20 1000
PULSE DURATION = 80µs PULSE DURATION = 80µs
ISD, SOURCE TO DRAIN CURRENT (A)
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
gfs, TRANSCONDUCTANCE (S)

16

25oC 100
12

175oC 175oC
8 25oC
10

0 1
0 10 20 30 40 50 0 0.6 1.2 1.8 2.4 3.0
ID , DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20
ID = 28A
VGS, GATE TO SOURCE VOLTAGE (V)

VDS = 50V
16
VDS = 20V

12

VDS = 80V
8

0
0 12 24 36 48 60
Qg , GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

©2002 Fairchild Semiconductor Corporation IRF540, RF1S540SM Rev. B

 IRF540, RF1S540SM

Test Circuits and Waveforms

VDS
BVDSS

L tP
VDS

VARY tP TO OBTAIN IAS

+ VDD
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS
0
0.01Ω
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON tOFF

td(ON) td(OFF)

tr tf
RL VDS
90% 90%

+
VDD 10% 10%
RG 0
-
DUT 90%

VGS 50% 50%

PULSE WIDTH
VGS 10%
0

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
(ISOLATED
CURRENT
SUPPLY) VDD
REGULATOR

Qg(TOT)
SAME TYPE VGS
12V AS DUT Qgd
0.2µF 50kΩ
BATTERY Qgs
0.3µF

D VDS

G DUT 0

Ig(REF) S
0 IG(REF)
VDS
IG CURRENT ID CURRENT
SAMPLING SAMPLING 0
RESISTOR RESISTOR

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

©2002 Fairchild Semiconductor Corporation IRF540, RF1S540SM Rev. B

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