is and Design, 2" edition ns Manu; Chapter 5 Exercise Solutions ES.1 (@) Vg =12V Veg =2¥ Vas (sat) = Vos Voy =2-5.2 = 08V (i) ¥yg = 0.4 =9 Nonsaturation (i) Vgg 319 Saturation Gili) Vag =50 Saturation Vog = 04=9 Nonsaturation Vpg ==> Nonsaturation Vos =5=2 Saturation Wu, 2L 3,9)(8.85x10 te 450x10* Ke (100)(500)(7.67210") * 2(7) (0) Voy =12V, Vog =2V @ Vg =04V => Nonsaturation 1, = (0274f2(2-12¥04)-(04)']J> 1p 0132 mA Gi) Vgp=1¥ = Saturation 1, =(02742-12)' = [)=0175mA Gil) pp =5V => Saturation Ty =(0274Y2-12)' => 1, = 0175 mA 1.87x10% F fem K, =0274 AV? Vpy =W12V, Veg =2V) @ Vpg = 0.4 V => Nonsaturation Tp =(0274)[2{2+12X04)-(04)'] => T, = 0.658 mA (i) Veg =1V => Nonsaturation 15 =(0.274{2(2+12\1)-(1)'] = 1p = 148 mA (iil) Ypg =SV => Saturation Ty = (02742412) = Ip =2B1mA ES3 Vay =1V Wop = 3V Vag = 4 SV Vag = 45> Vog(sat) = Ver —Vey = 3: ‘Transistor biased in the saturation region 15 = Kos -Viu)' = 08 = K,(3-1)' => K,=02mA/v? (@) Voq =2V, Vg =45V Saturation region: 1, =(02)(2=17 => 1, =02mA (©) Vos =3V. Vog =1V Nonsaturation region: 1, =(02[2G-11)-(1)] > 1 =06ma E54 @) Vip =-2V, Vag =3¥ Vep( sat) = Veg +Vqp =3-2=1V @) Yq =05V => Nonsaturation (ii) Vag #2 =9 Saturation Gil) Vjp =5V = Saturation (©) Vip =05V, Vag =3V Veo( sat) = Vo +Vyp = 3+05=35V @) Vg = OSV = Nonsaturation Gi) Vj =2V = Nonsaturation Gil) Vig = SV => Saturation ESS (@) A=0, Vos(sat}=25-08=L7V Fot Vpg =2V. Vpg = 10V => Saturation Region 1, =(01X25-08) => 1, = 0.289 mA ) 4=0020" Ty = EVs ~ Ven) (1+ Vos) For Vog =2V Ty = (01X25~08)'[1+(0.02\2)] => 1, =0300 mA Vos =10¥ 1,=(0Af(25-08)'(1+(002X10))] > I = 0347 mA (©) For part (a), A=0=9 For part (b), 2= 002", 1 =[AK, Ver -Yme)"] = [(002X01)(25-08)']" (73 KLB56 Vie = Vewo + 1{ 28; + Vee ~ f20, | 2, =O.70V. Ving =1V (2) Veg =029, Voy v (©) Veg IV, Voy = 14 (038 VOTHI-VOF] => Vy = LI6V (Ch Vg 4 V0 + (0380744 - VO7] = Vy =147V Vor = Vq-V; =-1-(igR, -5)=4~1,R, Assume transistor is biased in saturation region To = K (Wag Voy) = Pe Rs 4-Ves = (05 0.1Mes — 1] => O5V3,-35=0=9 Vos =265V (05)(2.65-1)' => 15 =136mA 10-1,(R, + Rp) = 10-(136\(1+2) Vos = 5:92 V Vos > Vae(sat), Yes B58 ven (qBtg)i-s = (Ban -5=0714V IRs =(Ltue Vo =5-U.2Mp- 0714 54.286 -(1.3)l0 4.286 — Vig = (1.2)(0.25}« (Vie ~ 2¥sa(-1) + (-1)7) 4.286 — Vic = (0.2)¥3e - 0.6Fs6 +03 0.3Vde + 0.4¥sc - 3.986 = 0 2% edition Ma: 0.4 Vl0.ay? + 4(0.9)(8.986) ay Must use + sign => Vig = 3.04 V. Vso = Jp = (0,25)(3.04 = 1}? = Ip = 1.04 mA 0 ~Io( Re + Ro) = 10 ~(1.04){1.2 +4) = ¥en = 4.59 (sD Van > Ven(sat), Yes E59 ty = K Wor Ven) 0.4 = 0.25(Vos — 0.8) = bes = 2.06 ¥ Vos= (xen) Yoo 2.06 = ()es + Rasen Ay = 181.340 Vos =4= Von ~IpRo Ro = Sot = Rp = 875 0 Vpg > Vos(sat). Yes 0.1 = (0.080)(Voe ~ 1.2)" = Ves =2.32V $= 2.32 So Ry = SS3P os Aga 1680 Vos = Vo - Vs > Vo = Vos + Vs = 4.5— 2.92 Vp = 2.18 Rp = SMB ow SH 28 5 py = nr Ip OL Vag >Voo( sat), Yes ESL tp = RES and By = Wen +¥r) 0.12 = (0.050)(Vse — 0.8)" Veg = 2.35. V Re = NEES 5 ge waassin — (Rs + Ro) 8 = 204 (0.12)(63.75) — (0.12)Re Ro = 2O=(0-12M63.75) — 8 O12 => Ro = 36.25 kK VspTest Your Understanding ___.|.||....--=_—__—Chapter 5: Exercise Solutions £5.12, Y, Ty= BE Ia = Kos Voy)" 10—Veg = (10 0.2\ V3; -2VasVew +¥ 30) = Ves = 208s — Vos +8 gs Tes -2=0 ta Joy +407 22) Use + sign: Voe = Vpe = 3.7 V 10 = 3.77 Ip = D557 = tp = 0.620 ma Power = [pbs = (0.623)(3.7 056 = K,(22~1)* K,=0389 mA/V = W_(389)2)_ ww L #0) Lo ES.A4 (@) The transition point is Veo — Vine +Vrvol 1+ {Kao/ Ku) ~ VV Kol kus Lai (is VERDE 1+ Jo0570.01 Lae = 326 Va Ve =2Uv Voy = Vy ~Viuo = 224-159 Voy (©) We may write 15 = Keo Vexo ~Vovo)’ = (0.05)(2.24-1)* = [p= 769 uA ESAS oy, Yoon Ye *Vnal+ RalEa) ae 1+ 4 Roo) Ka S-1+i(1+ JKo/Ku) + [Rol Ka 2S+: Key /Ky = 5+. Kp /Ky => 5-25 ART, =F -161 ol K, 78, b. For Vy = 3, driver in nonsanurated region. Joo =lon Kaol2¥s — Vso Wo Va |= Rua Wose — Von)” o0—Yo Von 2.78(2(5 ~ 1)¥ - Vo] = [5 - Vo — a7? 22.24Ve - 2.7803 = (4 - Vo)” = 16- 8% 49 = 30.24% +16 =0 30.24 + of (90.24)? — 4(3.78)(36) WET) w= = wsostv ES.16 If the transistor is biased in the saruation region Kn) Tp = K, Ves -Vrw) Ip = (0.28)(2.8)? = Jp = 1.56. mA Vos = Von ~ Ip Rs = 10 ~ (1.56)(4) = Vos = 3.76 Vos > Vos — Viv = Vay 3.76 > =(-2.5) ‘Yes — biased in the saturation region. Power = IpVps = (1.56)(3.78) We have Vo, =12V < Vag =Vpy = Voy = 18 ¥ ‘Transistor is biased in the nonsaturation region. 152 Karo Wor VE] I, = 0.475 mA o47s= x,[2(0-(-18)K12)-(12)'] O47S= K(288)=> K,=0.165mA/V* WBS, Ko HG “T2 HUSH) HoagElectronic Circuit Analysis and Design, 2™ edition ______ Solutions Manual 5.18 {a) Transition point for the load transistor ~ Driver in the saturation region. Vos sa! = Von = Voo Then Vp =5-2=3V. Vor eesti) 10.08 Sau, =2> Vs 39 (b) For the driver: Vg = Vy — Vino V, = 189V, Vor 29 BS.19 (a) For V, = 5V , Load in saturation and driver in nonsaturation. Too = oe Ka[2Y; — Vino Yo -V3]= Ka“ Ko fo5—1(025)-(025)']= ele 1(025)-(025)']=4 = Xx, Ko Ke 2.06 (©) Foy = Ku(Vre) 02 Kuf-{-2)f Ky =S50HAIV? and Kyy =103WA/V? E520 2) Tage = Kus(Vers Vou) = Ka Vora ~ Vosy =2V = Ves =3V k, L ~ekag-pree Suet 2-1) ne Yo Bi O1= Ky (2-1) => Ky, = 01 mAs? (©) 02=K,(2-1)' = K,=02mA/V? 02 = K,(3-1) > Ky = 0.05 mA/V? 5.21 For Ro =1042,Voy =5V, and ¥, =1¥ Sai 1,=2 =04ma 15 = K[2{Ves Vu Wos ~Vas] Iy=04= K[2(5~ K-(']= K, =0057 mA/V? Vos 5.22 Ty = K2(Ves— Vow Woe ~Var} = (0.080)f2(20 ~ 0,7}(0.38) ~ (0.35)4 Tp = 0.319 mA (a) Transistor biased in the noxsaturation region as, 1peSzSaYa a2 R 2¥ os Yn Won —¥3s) 12-= 4[2(5-08)¥p5-Vae] AV, —33.V og +12 == Vpg = 0.374 Then S—0374 2 5.24 8 YWaSV, 0, My cutoff = Ip 0 1)_ 52M 1p = LAV, Vn Wo-V8]=-E* (0.08)(30)[2(5 - 1)% ~ 7, = 5 - Vo 1SVF - BY 45<0 as fay - 40.5105) . ‘= ALS) =0.40 Meov Inzior = 4 = inslp = Oils wh b&b Y=ahasv -V, SMe af [2V, Yo Wo Y]} 5 — Ve = 2(0.08}(30)[2(5 — 1)Ye = Vo 3V3 = 25Vo+5=0You 28 (25)? - 4(3)(8) : aay > %=0.205 V s => Ig = 0.160 mA SV, + 9) 19 = KAY -Voe Mo V8] $-(010) 2 st K[2(s-1(010) -(010) |= K, = 0248 mA/V? so 3B 5 Vo = 12.4[8% — Ve] 12.4V9 - 100.2% +5 = 100.2 4 /(100.2)" — «(124N15) ~aEAy = 20.0502 V b = 2(0.248)(2(5 = 1)¥% = Ve) 5.26 Vos(sat) = Vos ~ Vp = ~1.2- (-4.5) (sat) = 3.3.V Tp =Inss(1 ~ 82)" 0 =Inss(1~ 2) = = [p= 545 mA E527 se ton(s Vsp\sat) = Ve — Vos = 38-08 Vso (sat) = 3.0 V : = toaeies ions £5.29 Ty = K(Vcs—Vrv)? ’, Ves = 0.50 = Zp = 25(0.50 ~ 0.25)" = Ip = 1.56 nA 5.30 ‘Assume the transistor is biased in the saturation region Ip= toss Vos (: - 75) 3 Mees -LTV = Ve -Ves= 117 Vp = 18 ~ (6)(0.8) = 8.6 Vos =8.6~ (117) = 749 V Vos = 743 > Vas ~ Ve = ~1.17 = (-2.5) =233 ‘Yes, the wansistor is biased in the saturation region, Ve = IpRs — 5 = (2.5)(0.28) —5 Vs = -4,373 Vos = 6 = Vp =6 — 4.375 = 1.625 5-165 Roz Te => Ap = 13s ko ot ate Ri + Ry = 200K Ri + Fe tts Ve = Vos+ Ve = -142~ 4.37! . Ry vo = (ggg) on—i0 ~srnee (8-10 = Ry = 42.05 k — 4240 Ry = 157.95 kN — 158k 8.795E532 Vs=-Vos. lo = Ves\? Io = los: (- ses) Vos _ ( ~My" = i, % Ge ao(1-At) ash o.at8V25 - 4Vos +6 =0 4a fe WOT) 20575) 88 or Veg = 1.81 V Ves = Io = Be = 1.81 mA Vo = [oRp ~ 5 = (1.81)(04) ~ § = 4.276 Vsp = V5 — Vo = -1.81 ~(-4.276) = Ven 2ary. Vsp(sat) = Ve - Vos = 4~ 1.81 = 2.19 So Vsp > Veo (sat) 55.33 Ry Ra Ri + Rr Inq = 3 mA, Vs = Foals = ~(5)(1.2) = -6V Vsng = 12 = Vo = Vs~Vs0q Rin = Bala = 200 ke = 6-125 -18V Rp = =) ; => Ro = 04k fas\? Ves tpg = toss(1- et)‘ onan M8 Vas = 0.838 V Va = Vos + Vs = 0.838 - § = ~5.162 te= (tem = 8.162 = F(200}(—20) > Ry = 307 kD Rk - Feith = 300 = (287) Rs = 100(387) + 1002 (387 = 100)R2 = (109}(387) = Rp 135k ns Manu: 55.34 Taq = K(Vos Vey)’ = $= 50(Vog - 0.15)" = Vos = 0.465 V Ws = (0.005)(10) = 0.050 V = Veo = Vos + Vs = 0.466 + 0.050 = Yeo 30516 \ Vp = 5 ~ (0.008)(100) = Ve Vos = Vp — V5 = 4.3 - 0.080 3 Veg as 55.35 Fo = K{2(as ~Yew Woe —¥Gs| = 100[2(0.7 ~ 0.2)(0.1) - (@.1)'] ona 28-91 ae 7 Ao azerkn Jo RoeElect Chapter 5 Problem Solutions i. Vos = 0.5 V -> Nonteturtion st Io = (Layl2t2 = (-2.5))(0.5) ~ (0.5)'] (@) Vos =6V > Vee —Vyy =5-15=35V. = Ip=asima Biased in the saturation region To= KiVes Yu) = (025) 5-15)" = Tq = 306 mA Ip = (1.1) [2(2 ~ (~2.5))(2.8) ~ (2.5)7) (©) Vos = 25V Vos —Vry = 0-(-2)=2V @ Iy= Wes -Yy ‘Biased in the saturation region kW 2 fy = —( = 05=(282)5(¥.-08) = Was Yn) ‘0.080') w 2 Ww 1S: (22) ho- -2)] = = =9. & OB= Ves = Ves 2 heh £ Vos (sat)= Vos —Vey = 5.5 Vps(sat) = 158V wis = (2500 08)? Is [Brot = Veg =354V Vos (sat) = 354-08 = V,s(sat)=2.74V 33 a Ves = 0 Vag (sat) = Vas ~Viy = O-(-25) = 25V i Vos = 0.5 V = Biased in nooseruration Io = (1.1) 2(0 — (-2.8))(0.8) ~ (0.8)"] = [p2248 mA Vos = 2.5 V > Biased in seruration Ip = (4.1)(0 = (-2.5))? = [p= 6.86 mA fk Vos =5V Same as (id) > Ip = 6.88 mA b. Vas=2V Vps(sat) = 2-(-2.5) =45V for _ (3.9)(8.85 x 107") Gl oR f= 167 10" Ffen? 4 Cn kK, Ha 2 0L b. Vos = Vos 3 V = Sunration Ig = K, (Ves —Vnw)’ = (0399)(3-08)" = Ig 2193mA 56 fax _ (3.99(8.85 x 1074) Cor = 600 10-* x 107 Ffem™ (100 (500\75210 rf © K, = 0288 mA/V?$7 Sa & i Vas =0, Vos =SV Vos(sat) = 0 -(-2)=2V Biased in saturation Ip = (0.288)(0 —(~2))* => Lp = 1.18 mA i, Vos=2V, Vos=1V Vps(sat) = 2 -(-2) =4V Nonsaturation Jp = (0.288)[2(2 ~ (-2))() ~ = Ip =202mA = 8.63 x 10~* F/cn? K, = HS WE * 2024 (ccoxesssior K,= (104x107 )W Ty = K.(Vos—Vv)? 1.22107 = (1.08 x 107) (5 = 1)? > W=721um Biased in the saturation region in both cases. aw 2 Ibe te +Vep) (1) 0225= (M2) Floeny 09 0 e( 0) aay 7 Take ratio of (2) to (1): 140 6999-6 tHe) 0225 © B+Ver) ERR =249 “ee Vyp = -233V Ww 2 Ww YE s-239) = Peas Ve=SV, Va == Vso =5V Vip =-05V = Veo (sat) = Vgg +Vip =5-05=45V a Vp =09 Ven =SV => Biased in saturation Ip = 2(5— 0.5)? > Ip = 40.5 mA b Vp =2V = Vp =3V = Nonseruration Ip = 2(2{5 - 0.5)(3) ~ (3)"] = Ip=36mA & Vp s4V= Ven =1V = Nonsaruration Tp = 2[25 - 0.5)(1) - (1)"] =Ipaiems 4 Vp=3 Vs Vsp =0> Ip =d 5.10 Vgo( sat) = Vg + Vee (a) Vyp(sat) =—1+ 2 = Vep(sar) =1V (b) Vep(sat) =0+2=2 Viol sat) =2V 142.=5Vgp(sat)=3¥ SAL Vg(Sat) = Vyq +Vqy =042=2¥ (a) Vzp =1¥ , Nonsaturation 1p = K,[2(sc +VerVso-Vis] Tp = (05[2(0+2\1)-(1))] => Ip = 15 ma (©) Van = 2 , Saturation By = K, (Veg +Ver)" = (05)(0+2) = [p= 2m (©) Veg = 3 , Saturation Same as (b), I, mAChapter 5: Problem Solutions = 6.90 x 10 Fem? y= (dnCor) = (675)(6.90 x 107*) = 46.6 wA/V? y= (4pCox) = (375)(6.90 x 107") = 25.9 pajv? PMOS: (D) torr os (2)(0), ~ (2) =» 2 Kk, (222 Ja19) ak, Want K,=K, 2) 8 466\(W) _ 8 (Ww (82)(%),-03%(%) 217 L=tum > Wy =7.08 ym 5.13 Ves s2V. ip = 1 1 * Tip * Doyen 7 2H Ves =4¥. Ip = (0.2)(4- Lay = 157 mA .2)(2 = 1.2)? = 0.128 mA i : warns > Seen pebl od Va= = Hoy 7 Vesey S14 Ip (2 (4)(3-08)' =(0.16(3-08)' = I, =0.774 mA L = = A= — = -—__—___ = " a tly (200X074) A{max) = 0.00646 V" 1 eaax) * 0.00646 V, (min) =: => V,( mit AZ MALY? = K, S.AS Van = Vino +7{qf20) Ven — 28; AVqy =2= (08) 24, +Veq ~ fH035)] 2540837 = [2(035)+Viy => Ven O4v 5.16 Ay = AF, ef] 12= xf Y037}+10 - f3(037)] = 7(2.42) Then y=0496V"? SAT A. Vo = tortor = (8 x 108 (275 x 1074) 5.18 Want Vo = (3)(24) = Contos = (6 x 10%) tox foe = 1.2 x 107 cm = 1200 Angstroms )y ‘Assume transistor biased in saruration region ty Hew Ye Ver = (Voy Vn P R, Ry 3.6 = Ves = (0.5)(2)(Ves ~ 0.8)? = Vas ~ 1.6Ves + 0.64 Vas - 0.6Ves 0.6 = J(0.6)? + 4(2.96) 2 Vas = Ves =2.05V Ip = VorVas _ 36-205 Re Vos = Von ~ In(Ro + Rs) = 10 = (0.775)(4-+2) = Veg = 5.35 Vos > Vos(sat) ip 0.775 mAVo a-4V Assume transistor is biased in saturation region 4-10) = tHe key Vy , " K, -(2 (60) => 18 mA/V? (18X05) Vos = 2)" SO9V2, -3.6V gg +36 Then 0.9V3, -2,6Vg_-2.4=0 vee 262(2.6)" +4(09)2.4) AAVeg +10 = 305) = Voq = 362 Vo“Vop +10 _ 4362410, R; 05 Ip = 4.76 mA TL9V > Vop —Voy = 362-2 162V $21 ty =the K (Vso *¥er) : ‘Assume transistor biased in saruration tegion ves (gg) en -10 2 (sFz)o0- @ Vo = 4.67 V Vs 2Vo+Vs0 10 = (4.67 + Vga) = (1)(0.5)(Vs0 — 2)? 5.33 = Veo = 0.5(Vig - 4Vs0 +4) 0.5V2g— Vso - 3.33 = 0 1 J)? + 4(0.5)(8.33) BOs = Vg 2307 Ve = 10 ~ (4.67 + 3.77) _ fp = SEE = astm Vsp = 20 - Ip(Rs + Ro) = 20 ~ (3.12)(0.5 +2) = Vp = 2V Vep > Vso (sat) ion Solutions. ual 5.22 Vo =0, Vso = Vs ‘Assume saruration region 1p =04= K,(Vag-+V¥en)? 0.4 = (0.2XVs ~ 0.8)? +08 > Vs =2.21V Yo = IpRp —3 = (0.4)(3)-3 = -3 V Vsp = Vs —Vp = 2.21 =(~3) = Vep = 5.21 V Ven > Veo sat) 5.23 V0 * Loge +¥oe9 + logs (1) 10 Lg (5)+5+Ve5 and (é en Then at 10= Fog(3)45+25—) Tp =05SmA Then from (2), 05= (2\#)es- 1s Ww Yaoas zt (ate Na ee Ry =Sk0 tog 05 © ——— he = (05){0.05) = 0.025 mA aR" 10 R,+R, =o 2 400 ‘Then R, +R = 75 = 400 (es Vow) = 2a =( 0) =2(29)-2 R= 8 =20010 5.24 = 2.25 = Vos +5 = (0.5)(0.6)(Vas —(-1))? 2.18 — Vas = (0.3)(Vas + 2¥os +1)____ Chapter 5: Problem Solutions 0.3Vds + 1.6Vas — 245 = 0 e+ y(1.6)" + 4(0.3)(2.45) Vos = 20.3) = Vaso tv Vps =10-Ip(Rs + Ro) = 10~ (2.52)(0.6 +0.8) = Vos 2647 V ¥os > Vos(sat) 525 20 = Logs Ving + logo () 20= Veg +104 Loge BYyW tna (EE y 0.040 VW 2 =(2 Wy, 2) Io ( Z Eve 2) For example let fog =08 mA ad Vag = 4¥_ ‘Then 08 =| =m ¥ w (4-2) => 0 Le Inge Vg (3) oe R=5k From () 20 4+10+(08)Rp = R= 75k 4 = (08X01) = 8, +R, =25000 Rk, (ec }e- Wy, =(2K4) F=8 & 002, Ry = 150k = 50AV gr 12)" => Vgs = 1516V Vpy =5—(-1516)= Vy = 6516 Gv) [y= 1=(05){Vgg-12)' => Vag = 2.61V Vor =5~(-261) => Vog =7.61V Vog = 1S16V Gv) Veg =Vpy = 2.61V Ty = Ky Vos -Vrw) 0.25 = (0.2)(Vos — 0.6)? $0.62 Vos = 1.72 =e V¥ee-172V Vp = 9 ~(0.25)(24) @ Vp 3 V 5.28 a Ips *Gt aos = Rp = 54 Ro Ve=0 15 = K,(Vog Vw) = 08 = (04)(Vgs - 17) +118 Vos =31V = Vs =-31V 11 = (=5) fowu Re Aa SSK $29 Voo = Vip +1ogR 9=254(0)R> R=6542 log -(£e Vso +Ver)P on=(2\E)es-15)" = e 8 Then for L= yom, W=32 um 5.30 3= Tog + Vang = Uog(2)+25 [pq = 125 mA oe RR oq = K Vas Vn) T= (1250.1) => R, +R, = 80 KQ 1.25 = 0.5(Vgq +15)" = Vg = 00811V Vq =V, —Voq =25-O0811= 242 (aes 10)-5 =(%}i0)- 242 (Bho 5= Ry = 594K, R,=20642 1S =Vig S3t K, (ee S930) 20) = 030mA/v? 1g=K Voc +¥re}t 05 0304, = 12)" => Vig =249VHlectronic Circuit Analysis and Design, 2" edition ______ Solutions Manual 5.32 5.35 Io = Tete 5 tH a. M, and M, in saturation p= sa ott Re Ro K(Vony Von)" = Keg Vora Ves)” => Rp = 08k (Vass ~Vewi)” = Kya(Vors ~ Yea) eke ws Kua= Bay Vou Vina = Kyla Von} = 5= Hig 129) = Ven =Von =38V, Y=25V Vso = Vie 1.75 = 3.04 V = Vo = 3.04 To = (15)(40)(2.5 - 0.8)? = Ip = 1.73 mA B w w ven (qty) -8= 30 & (8), > (0), = ven ven Ren = Ril[Ra = 80 ER 40(Ves: ~ 0.8)? = (15)(Ves — 0.8)" AL. (90)(10) = 5 - 3.04 > Ry = 408k Vesa = = Vasi aes 1.63(Vosi - 0.8) = (5 — Ves: — 0.8) = M0 > R= 995k 408+ Ra 2.63Vas1 = 5.50 > Vor = 2.09 V 3 Von =291V, Waves = 2094 *° ‘60° Tp = (15)(15)(2.91 - 0.8)? = Ip = 1.0 mA, @ &u=(2ho =120uArV* 2 $36 Ka -(S\y-s0m0 Bach transistor biased in saturation. V, M, Sat. region, M, Non-sat region. Ma: Wave a Ton To, tp=0s=20a(7) @-1p 30f2(~VeX5~¥0}~(5—ve)"] = 120(1-08)" (2) ma ° ‘We find v3 -64v9+716=0= ¥)=4955V Ath (©) For v, =3¥, M, Nom-sat region, M; Sat. Mas Yon 4K region. Lo =o: Ip =0.5= oore(4) @-1F 3h{-18)] = 120[2(3~-08)v, -v3] wen We find 4v3-17.6v,+324=0= v= 0193V. La My: Ves 9-% =10-5=5V (©) For v, = SV , biasing same as (b) w - W) isa 3-14)" = 120,2(5-08)», -v3] Ip =08 oars z yas vy We find 4v} -3367,+324=0= v,=00976V 5.34 For v, =5¥, M, Non-sat region, M, Sat. region. lox Ww (BYE) even" tan “Mad= (SE tran -Yaal? {E) ee 080019 -(157] -(fo-ay ons—san. which yields () 323 = (F), 6 -osven - 0.0%) 16.81 = (%) fon) (12), ensShap ter 5:_ Problem Solutions 5.38 M, in saturation Mz in nonsaturation Ww ~() [20a VneWan Yao] (ae? - (%) [25 0.810.08) (0.057) we 3Me (3) oats w Ww) ooze (), 5.39 Ter = Ky Vase Yon) = Kal Vors Yon)” Voss =5 - Voss [$s — Voss - 1) = (Wess - 1) 241Voss = 6.66 > Voss = 2.76 V Ves = 2.MV, Vou =Vosy = 276V Trae = Key(Vess ~ I agp = 0620.mA Tq = KealVass Von)" = (01)(2.76-1)* [y= 0310 mA. Tq = Kalan Yow)” = 0310 =(008)'¥,5,~ 1)" =(02)(2.76-1)" 2irel S5pt = 049 ma ‘Transistor biased in nonsanuration To 30.48 =0.015)( {204.2 = 0.8(0.1) - (0.1)" W) vena “nor oaa= (Zoey Foor a LS S41 521 gRo+V, +Vog $=(12)R,+16+02— &, =2670 wren OHO Ws ogy H. 2=(SY 25-087 # ‘5.42 S2V yp + lp, +V, 5=015+(15)Rp +169 17 kyw 2 (Bhp 15=(222) 2) s-08)"= ¥ gs 2 L L 3.43 Vos(sat) = Ves — Ve So Vos > Vos{(sat) = ~Vr, Ip = Ipss 5.44 Vos(sat) = Vas ~ Ve = Vas +3 = Vos(stt 4 Vos =0= Ip=togs=6mA Ves te tess(i- BB) =e = Ip =2.5TmA . fo =s(1- a Ip=o 5.45 tte tou(- gy) : pss(t- sz) = To ss(0.360) Ips = 5.0 @Auit Anal} i Vem Ves, Vs =Vs—Voo Want Vso & Vso( st) = Ve ~ Vos Ve = Voo 2 Ve ~Ves = Vos ~ Von 2 Vr ~ Vos = Vop S~Ve So Veo < -25V fg =2= Ioss(1~ ies’ 2 am 6(1- 32) = ves = 108 Ip = Kos —" 185= K,(035-Vy)" 862 = K,(05—Vyy)" Then (035-V,.)° 285 _gayqg.= 035-¥e) Vg = 0221V 362, (050-Vz) 185 = K,(0.35-0221)' => K,=Llma/v? Ty = Woz ~Vn)? 250= K(0.75-024)' = K=0961mA/V? 5.49 vos\* I= Inas(1— BE) =o he Wor, Vis) oy, a(14 BEE MEE) over 2 3 2vas+ vos +2=0 qe¥as + G¥as+ 2V3e + 45Vos +50 =0 Vos = aay = Vege LITV Vos 17 fon Sw Gp abs A Vp = 20 — (5.85)(2) =8.3 V Vos = Vo — Vs = 83-117 = Vo = 713 5.50 Vos = Von - Vs B= 10 ~ Ve ob Vs = 2V = IoRs (SIRS => Rs = 04k Vos 1) By = wenae Va = Vos +Vs=-14+2= 1= Zeiny00) > Resun ; SRa 5 33 Pip wT OS = A055 ua S51 0 — (5)(0.5 +2) > Yep = V Vp = 20 ~ (6)(08) =175 Vo = Ve4 Vos = 175 +0838 = 10.3.V Rr ‘. 1 vo= (qeg) vo = Pha Yoo saa = Ley) = g =10940 1092 » Te, = 100» esata 5.52 : Ip= toss(1 - tg) a 5=1(1- 8)’ = vee seats v Vsp = Voo ~Io(Rs + Ro) 6 = 12—(5)(0.3 + Rp) > Ro =0.9 kN Vs = 12 = (5)(0.3) = 105 ¥ Vo = Vs + Vos = 10.5 +0.465 = 10,965 V Ry Yo= (x + x) veo roses = (A) a= m= 14K > R= Bk5.53 Ra ) ( 60 Vo= Voo ° (xe: 0° = \ Tao + 60, = Vo =6V fo = Ioss(1- Ves \? cayay(- &) 6-Ves w(i+ He Ves Vés +9Vas +1 9+ V9} = 410) Vos = ; = Vos = 1,30 1.30)? fom 6(1- TEP) = pats oa Vos = Von ~ Io(Rs + Ro) = 20-—(3.65)(2-42.7) Vos = 2.85V Vos > Vos(stt) = Vos — Vp 30 ~(-4) =27V (Yes) 5.54 Vos = Veo ~ In(Rs + Ro) S$ =12=Jp(0.5+1) > Ip = 4.67 mA Vs = Io Rs = (4.67)(0.5) > Ve = 2.33 ¥ . & yy Va = (+ -) von = {2 (abe) = ate) on Ve =0511V Vos = Va — Vs = 0.511 - 2.33 > Vos =-182V Ves\? to = foss(1~ ¥2) + 10/1 — (22:82)? er eto(i- SLD) yew ss 5.55 to = tose(1~ EE ip=ipss=4mA Rp = aa Vos _ 10-3 To Chapter 5: Lutior 5.56 Vsp = Vop ~ In Rs 10 = 20 -(1)Rs > Rs = 10 kt 4 R= OP oie Yas to = lose(1~ 2) ; 102s M2) tare ssey Vg = Vs + Vos = 10 +0.586 = 10.586 Ry Ye - (aim, tm) ¥e roste = (#2) 20) m= ern R= oko 557 Vos = Voo = Io(Re + Ro) 2= 3 (0.040)(10 + Ro) > Rp = 15k 15> Kos Vey)? « 80(Vos ~ 0.20)" = Vos = 0.60 V Ve =Vos+¥e 60 + (0.040)(10) = 1.0 R_\y ven (x ta) Po - = (B)o- Ry = 50kn Ry = 100 kt 5.58 For Vo =0.70V => Vg = 0:70°> Voy (sat) = Ves —Vew 075-015=06 Biased in the saturation region 15 = K(Vog Vy)" = 46 = K(O75- O15) = K=128 xA/V"