Professional Documents
Culture Documents
1. Certificate
2. Acknowledgement
3. Objective4. Introduction
5. Line of the action
6 Apparatus Required
7. Experimental Arrangement
8. Procedure
9. Observation
10. Tabulation
11. Graph
12. Result
13. Discussion of the Result
14. Difficulties faced
15. Limitations
16. Scope for further improvement
17. Bibliography
18. Appendix
19. End page
CERTIFICATE
SIGN OF STUDENT
OBJECTIVE
INTRODUCTION
One of the most familiar and most used devices in the present
day is semiconductor devices. The use of semiconductors changed the
world from electrical to electronics and technology improved a lot. The
materials in which the forbidden gap is very less, the electrons can
jump from the valence band to the conduction band. At high
temperatures, due to high thermal energy the jump may take place.
This type is called INTRINSIC SEMICONDUCTOR.
movement across the junction depleted the region of its free charges.
The thickness of the depletion region is of the order of one-tenth of a
micrometer.
When an external voltage V is applied across the diode such that n-side
is positive and p-side is negative, it is said to be reverse biased. An ideal
diode under reverse bias will have infinite resistance. We will use this
special property for the construction of the rectifier.
LINE OF ACTION
We planned to construct Half Wave Rectifier and Full wave
Rectifier by using:
6-0-6 Transformers
Junction diodes
Capacitors
Load Resistance
To study the ripple factor (Vac/Vdc) of the above
mentioned rectifiers. To compare the ripple factor with
and without filter. To compare the ripple factor theoretical
value and practical value.
Apparatus Required
6-0-6 v 500mA Transformers
p-n junction diodes
Capacitors(100µF)
Resistors(1kΩ)
Wires
Soldering Gum
Multimeter
Cardboard
Cutter.
Experimental
Arrangements:-
At first the step down transformer was taken.
The diodes are arranged as per the circuit diagrams of
the respective rectifiers.
The capacitors were connected parallelly as shown in
the circuit diagram.
The output was taken across the load resistance of 1kΩ
which was connected parallelly.
All the connections were made with wires and with
proper soldering.
The soldering was not done to the transformer output
and a switch like arrangement was made to the
capacitor so as to get the desired readings.
CIRCUIT DIAGRAM
HALF WAVE RECTIFIER
FORMULAE:- VALUES:-
Vrms=Vm/√2 Vacinput(Vrms)=11.1
Vm=2Vrms Vm=22.2
Vdc=Vm/ π Vdc=7.07
Ripple Factor
(r)= √[(Vrms/Vdc)2-1] r=1.94
With Filter:-
Ripple Factor, r= 1/ (2 √3fCRL), Where,
f=50Hz
C=100 μF
RL=1KΩ
r=0.56
Vdc=2Vm/ π Vdc=5.40
Ripple Factor r=0.84
(r)= √[(Vrms/Vdc)2-1]
With Filter:-
Ripple Factor, r=1/(4 √3fCRL), Where,
f=50 Hz
C=100µF
RL=1KΩ
r=0.834
OBSERVATION
FOR HALF WAVE RECTIFIER:-
Without Filter:-
Vac(v) Vdc(v) r= Vac/ Vdc
USING DMM
11.1 4.75 2.33
With Filter:-
With Filter:-
GRAPHS
HALF WAVE RECTIFIER:
FULL WAVE RECTIFIER:
Without Filter:
WITH FILTER
RESULTS
HALF WAVE RECTIFIER
WITHOUT FILTER
WITH FILTER
WITHOUT FILTER
WITH FILTER
2.Output voltage:-
Among Bridge and full wave rectifiers we
saw that the output voltage as well as
the input one was more in bridge one.
BIBLIOGRAPHY
TITLE Class XII PHYSICS TEXTBOOK
PUBLICATION NCERT
TITLE Investigatory Projects in Physics
AUTHOR V.K. Sharma, S.C. Bhatnagar
PUBLICATION TATA McGraw Hill Publications
TITLE Modern’s ABC of Physics for class XII
AUTHOR Satish K. Gupta
PUBLICATION ABC Publications