DDR2 allows higher bus speed and requires lower power by running the internal clock at half the

speed
of the data bus. The two factors combine to produce a total of four data transfers per internal clock
cycle.

Double data rate type three SDRAM (DDR3 SDRAM) is a type of synchronous dynamic random-access
memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007.
It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic
random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with
any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and
other factors.
DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier
types, with similar performance.
The primary benefit of DDR3 SDRAM over its immediate predecessor, DDR2 SDRAM, is its ability to
transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher
bandwidth or peak data rates.

In computing, DDR4 SDRAM, an abbreviation for double data rate fourth-generation synchronous

dynamic random-access memory, is a type of synchronous dynamic random-access memory (SDRAM)
with a high bandwidth ("double data rate") interface.
Released to the market in 2014,[2][3][4] it is one of the latest variants of dynamic random-access
memory (DRAM), of which some have been in use since the early 1970s, [5] and a higher-speed successor
to the DDR2 and DDR3 technologies.
DDR4 is not compatible with any earlier type of random-access memory (RAM) due to different signaling
voltages, physical interface and other factors.
DDR4 SDRAM was released to the public market in Q2 2014, focusing on ECC memory,[6] while the non-
ECC DDR4 modules became available in Q3 2014, accompanying the launch of Haswell-E processors that
require DDR4 memory.[7]