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    12 views29 pages

    Lic Eie 1

    Uploaded by

    simbu oneone

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 29
    E2254: LINEAR INTEGRATED CIRCOITS © AND APPLICATIONS OnT-£ : £C FABRICATION, Tntagrale Ciseudts \- An Tntegrlid civeuits are mintalwue , low Cost elockenic cimudkk Londishing Of acbve and pawive. Components fabrfeatid bogether on a Singh emyptal o4 . AS gilitom - (thot “axe ine posredbly jesned ) most 6 Ihe Comporanks used tn Tes ome not Comporants diodes, Toanetolir, Bimiler & Conventional > Th appecurance although Romblir ard capacttome ete... perboren Bimilaw electrical furctiond van tegen of Les:- 1. Mivialwitzabim and here Ineweaned equipment, a. Cost reduction due te batch prowning. 2. Eoortaned Ayslin valiabililg dus We elimination 94 Bolded Joints. he Improved funchdn perforsnanco 5. matched deniter b. » Lnureaed Cpusting Asad > Reduction in power — Comumphen. denailg . Classification :- @ Lnegrated cireuits Cher a wide a ot applicecttona and could be brreadly Clawitied — as Digital e's, hiner Le',. Digit To's! Digital Te's Auch ad —mMicsopracemers, DSPs amd miro Conbotled’s ete. Can Cantein ang from om be million of logic gol . lip-tlops, mulkiplaias and othie waits Th a few Aquase millimetaa. Digital Lely axe operatic by binary ‘p's and “1's Advantage D. Weg Apread WW). Lew power iss ipation i) Reduced — manwfactusii Cast Compantel With bread -fawtal (Po) Pee - level integration - dinear Fels! . Linea Fda cme analog Tes, Luch an Sennors , powar marageient —cincuits and operational amply ov Unewr Ico one Operated by Contiounw Argraln Benet on Ike requanements two diferent 1 lecbnolog namely , lL Mono}ythtc technology, 2. Hybrid feohnutory. In monokykt. Lox, all covert Components , bolt. ackve ‘and poutsive Comporonts and their interconnection ane Manufactutad into Cor) on fp a} a Divgfe chip at Ailiton. Monolythio — Cuycutte te Identa? civeuks ane Yequirred tn wang (ange hens proves Cousat por-umib cost and higfent order of VaAtabililg, Ligh To's: tn yb creates, Aepanale Components 7% attache Bubserli and inboseormetted Sy means h decal fur applications . where quanktin ame t A Cortamie either mefallizabyy paltyen or wire bonds. This lichnotogy is more. adaplable & Amall gquanbil castor, Cures “antag ali Creu monoby His wo Cats Hybsid Vereen Ty wy pipelee Uni porta —_ iY po-juncton Dielecee MosFET Ofer. is station igutaltion Classification a Les. Prased on Ie chip Aire x8 Ceri Complslf- @ Fen are — Classiqied cxceuding le the ; number. of Components . Small Seale Trrkegration —- — & Jo Lomporats . (80) (age, Hp Hep) < 100 torn ponenls . Meclium Beale Lategiab — — (sz) Ceountus Addo aoulfglene). Lasge Seale Eakegration — SS Joo Lomporents. (est) C abit PP > Rom , Ram) Ven (oage Seale Toker __ > {000 Components. (vest) C ib 32 bit xiumyprownus) & c ye aie -—p hl hem ! Gy | hg. %- ss chp hmm ky. 9 msi chp: }e——— tom I gy (ar) VEST chip: fy. Based on package : 6) Based on pacleage 4s aro ol ipied as |. Metal. Can package. ; x. Coramle Flat package 3. Dual- in Line C c&hamnie Oy plashe Gpe) pasicage. Basic Plenat Pro w¥er:- The basic proces wed ts dabvicals e's using Ailton plana Uebnofogy Can be ohes categorised as ellews, 1 Siliton foefer Aub thole ) prepasoliee. Epitaxial grout Oxidation Phols Lytkography Diffusion Lon Lepls mentation polecton Melalli zation : 9. Assembly Protaxsing areal pacleaseng. ow Tr Hh FW & Silicon Wwodfer Trepatation © The +tollowing Sleps ano used in the prepasdalion cot A odie. I. Caystal growth and ping. a. Tngot bamming and inating . 3. Togot aig” - 8 4. SG refer paPaRing ord eleing C19) Rotation Waghot ead : w The Atostting material fow caystel gprscath Tog puritied (49-4997. polycrystalline Ailiton » x. The Z2ochralare enyplal gyri. process is The moat edtes used for poducing Aiogle ergstal Silitoa ingots +. The pofyerystalline Si liloa tagelhes with a” cuppropdale ‘Ay. Coachrolski Cagsta_ grt amount of dopant i puk % a Quarte oructhle and rs then plated ma spuanetee « a. The material & then healed le a Gmprra tase in exwos Of the -Biliton anetbing point ¢ © 120. a. A Smal) Al Bead fal’ 5 and Alowly pulled out as a. Ay the Acad cagpstal Is pulled out of Ii melt, 1) bafngs with te @ Bolidiied mass of Ailton coith fe Aasme engplalline Aluchue ad that A Aoad caystal. a. During the . ucystal pulling pour, Phe Avcct engstal and tpucthle awe otatid oppoante Aivections 0 ordgt (5 produce ingots of coronas onogs- Seolin . a. The’ diamelae of the ingot 45 tontwtlled by Me ¢ palling val and The mebl lemnporalinrs. - ° te Isteen 1s Compan x. Angot diamelie of about lo and ingot lengftc is gensally Of Th. owder of Joo cr ane bollom portion 4 Ne ingot ar produce an eKat fal vod of Ailiton Called a Hen lipped int Ihe Aiton ~ mel Shown In by. Next lp tuk off, and ‘ingot Aurfate is grroued ts Ahamelit, C D= 10,1755 ise), ‘The ingot is also qraund far E>) ) Stightly aleng the lng apr ; . a Yefetene plone. niente" Jor a, The ingot ts thin Blited wing @ Ateinloss ® Steel San blade wilk Indusbial diamonds canbedeled Into the jnnex diameles cutting ectge . rts produce cirelat wseufer wy A\iws os Aboun mm by. a, The AiNton weer “Bo obtained Aewe ws ough Surface due Alicding opeaben, “There capers undetgo a number of polishing Aleps le produx Eel tat AwfAwe « Then one Sido of the voafel ts giver a find miveor Amootk ht potished finish , whens fhe otk Std ty Bicoply ped On am Abrasive Lepping Await, machine te Obtain an aeceplable degres ot — tlokrnenss. finally the wafers ake Theroughly aimed and sed, These ASiliton wafers Will Contat exetal hwndied Yectangulas chips, each one containing a Complelt integrautio! Corals . The wafer Thickness Hervefre 18 Bo Chosen that Tk ts — posible b Acparalt chips without breaking and at Me Aare time , ik qeves Auffiusor mechanteat, Stoength bh fle Te chip « The vectongulat chéps hawing Aida of to te 1mm, ~_Bpitoxial Growth :- @ #. ‘The word epitaxy is derived from Gazok won epi — upon and the past ange of The lourdl beknw toknon — Meaning arranged . Bo, epitarsy means "arranged atorns in 0 ingle caystal fasfvim upon a Aingle eaystal Aubstrale” +. The basic chemical reactor wed for the epitaria qrowk a pure Biliton f& The hydrogen vedluckim of Siliton — tetvachloafda - - Sic, + aH, eal2Ocic ees Sep + 4KHtel. < Mostly, epiarial files wilh Ampeeigic impurily Conenkakion Gre Yequirel, ‘This fs aceomblisheol hy intreducing phosphine CP Hts) dor Me n-ly 38 bi. Berane (By Hy) tor p- Wipe doping ible Me &nhiton — lgteachluvide Aychregon ges Atvean, * The plows 8 Cambed out ® a veactin cham’ Consisting ca @ long Cepfinctseal quarte tube eneivele by RF. mducton “coil. * The AP. waofes ake placed ona reehangular graphite ash Called a Boak 1% w dboum i, hg. D © > we He > a Hat Sicly > = Hy + PHs Pa Hy + Bolt, —— Woe Hcl. Hien plated fr the Yearkim Chambet *— healid G @ Genparatare }2.00°C « This boat ft whore the graphite x The Votiow gase yequined tor “geen of desired epitaxial lays ayo Indreclucact ints the Sp lem th a tontof onset. Oxidation :- Sto, has He popadg of Preventing be digusion of almost all impusittes Ihrivughk fe, Te Saves two voy important purposes » y. Slo & Qo extracnely Rod prrotechve Coabing.- and is unaffeclid fy almost all vagents except hycdfinonc neta © Thus, it blandy against ang * Contamination , @ B, ‘ie : f g g Selachve , etching Aidy , diffusion of imputh bi Caedully defined winclows im He id, Cao ho accomplished [6 / fabricate Nostiows Componants,, a. The Ailiton wocehens ane Atadead up lols a Cron. boat and Man insula ints ononta furnace. tube. The Ailiton-vwoapes au yatsed & a (pra i the ok aso & Mee and at Ie Bom. hme, exposed te @ containing Of) llyo on) hot. The Chemical teachin IS > Slo, + 2Ho called a theemal fs used St 42H «a, This ontdadion prow oridation deoawe hah * Gonperatode tke oxtde : x The thickness Of fhe film ts governed bay hie lienporollie 5 and the rmaslue Conte, «¢. the thickness % oxide topes é vonarlly: tr Ih Ordlee 24 0.02 t ABM. (2) with the bal 4 PhotolylRoqenphy, it ews become Porsible ° AG prochace serosal Small Gur ane) device paltewia on S1- doofeas, The photelythegraphy prowess unen a Ov lat EXpasuts. , Pho lly Hography fnvolves 2 proms , namely GC) madern | of a pholegrapRie mask. ty Rote” etching . Pholiqraphic WMaxk Cb. The propertation. of initial artwork. thy. Tks acuckion.. *. The preparation of Inibal artwork fs done at a Seale exeral Prundred troes leper leunger. Hawn tie. Boral Aimension of the finished monolythi. ese, jnittal autwork ts Him clatomposed mle a this Berral mane loyers, ench Cermcasponding So procms Atép in the qabdcahim Ale Sehaoluke - C24). q@ meal» tor base Aiffunion anolten far Collect Aifpunion , anothur jur metalirahun amd soo Phols _etechiog I ¥ pho le etchin Is uned fur the rmnoval at Si0, trom desired ~ vegiuns. Ao That desi rect Fraopusitien Cam be Aiffinect. 4. the’ water BR Coated with a dim ¢ @® phelo.seritive emulsion (kodak pholexeset KAR), x». The thickness of the ilm i in the ange ot ae ; eacaaeat Ulbraviotar radiation oye proto anist film | pote ma ; LL ar id Silicon Waker Sibon Water polymensed eee photo revot Wt, Sig, ula, wun Silteon Wafer Silicon Waser Ace hg x. Phols. veslot pled on te At- voter. xo This Te ow exposed te Ov Light, So that Ie IPS betores polymeriaed , he traswpatont Daglms Ihe mask. a. the mask R then Aamoved and tha toate % oucboped wring a Chemital C HF chlevo etkybone ) whic dimotes , Ihe unexposedt | wunpaty mernizcdd Yagums on Ike photo reslot andl (rawes He pattie. * The polymonzed phols- vert & next {xacl ©) tos). Cuted. The chep Re fpmensed In the 2tehin Solution of hydro plausete actd , which Aemoves t Bion trom ta coma , which awe not proliclzd by KPR. a. Adtee difunion 0} Tmnpusibyes , He photoveatot & Somoved with a Chemical olent ( Hot HS»), x This etching prow % a wet etchin procss and the Chemitals are uoed ho Liquid erm «a A new prow ured thine dlays ba day ebbing prowxs Called“ Plasma etching « Advantages of day etching at ts pomidla te achiove Smaller Aine. openings (vpn) Commpared wat procede® Diffusion :- x Anolker important prowss iy the talrieatun a monolytkic ac the Alffubiun of ienputilies he Ailton hip. Tre wor Aja bomporabwre putea. Feuing «tr Coperatote profile over a woebul! Dong C20" ag) «. A quartz beat Containing abet do Cleared wager puoked nts he hot Zone wilh Groparcuhue. maihlained at looo%c. , : «Deputies & be Atftuned ane Devsly wed ® fh tetx elemental ferns, nefnally Compounds Snek %, BO, - (Bonn onide’), Bel, - [ Berun chide], ove wood de Bow, 2, O¢ - [phasphurowr penta. ont J, Pols - phos pherwus oxyehlon det. awe wreck a « Aoustled of phos phervus. . +, A Comins As, Auth oo Day orygen Luo nitnge is normally wed fur Auscoping Fra, impunity, x. the depth «4 diffaoivn Aapends ar upon the Lime ot diffwivn which qureelly extends ww Zh, Lon Sm lantakion J “ch . Accelevahon nas oe mass Aegon {ion ‘m choco magnet | | . Trot a “ ——t pT Ton Bret i ants deffachun eat q {| | LD LY nis wy ie ea ‘wonton PE pow a upp : L4 4} edigeh chambet lem Aowle x Lon ‘Ten planjatiun TS tke obharw foobrrigns. wed te fntwae —fnpusitinn into @ Biliusn looker. x In this process , Ailton aoaders onro plautec Wm a Vacuum chamber and ate &ccunned by a eee ee Aik enna dopant fons ( bowons tor pr Yip amd phaspRowus bor me Une) . . a. these fons ame —aceclonatlial by enoegted beteaore aokv te sgotev, Aa tke tom Abi ke the Silitun vwafats, Viaiy penetrall Boma Sialt distance inte Yet Loahak. x ‘the -doptk ab ponebeaton of ory Panto Ue» et fon ‘inereanes vith ‘memasiog accelaating Volkege . Lon iim plantation Geboigue hay wo iropurton advonntoges , aD, at 1S portturened bs at low lempuatew , Therrofure , proviously diffunivn ‘egurna Rowe a Lenser dur lakenot Aproading . (iy, Za diffusion prowrs , Temperature how Ie be ana “inwida te ove , whuteas Conbwtled over * are ion- implantabvo technique , atcdorating ana the Peano wrront ave oc ticobly potea kal tontwtled = pom outside - Lrofation technijut? ® Lage number ef Components are tabncated on te Same ae-chip, Ik betomes necarsory 15 provide Aochical “tAwtalin betoveem different Component» amd Intottonnactions . - Vastiows 4 jastation technique hawa boon oweloned. 4wo commonly woed techniques nemnoly (prs Junction isetakon, lid Di-cleotie 18otatcon pa junction ‘\aotatton ‘- dn this iSsfation technique, p* Lye Jenpunies arse eleckvely Arfuned ints Me np-l§pe egitaatal layer Ao on & reach pr Gpe Subshal® ar Zhowo 19 +g. #& This produces islands Surrounded rassfakion iskaoe! by po pe moats. Tk Can be np Seon brat there Jagions ame Acard by Hiro batele- U6 - bale a Ve p- Yrs Bubshols material 6 Peld at lke mos ‘nagpbive potential Hh the cureit , Me dusdas will be apentoAD2. bianed provideng cloaks. tavfabn fotweoy The bnlands. : The ees Components ane. farrscablol 3 There tofatton islands. / ¥ ¥ Fn o* frei] PY [nee pn- gunctwo Aicde 3. cdoz Ge the precante @ a bransitcon, eacpatitents® at the V4ofating par- qunetions , woulling Th an tneuibable Capaci lin Coupling betorsen the Comporends and tke Anbsbroti These peurarthe Corpactlantes Remit te Perheemante o4 le. dimeate ak sprequanuien . But pees QComoMm CoP’ this technigue 1s Coromorily uneol fie Goce porpode, Fes, . Fi me Bul, 3 5 OPP EITEE cory Dielechye — iAstatim :- LEE uby each MeN . Here a layer ed Solid diclechie Such an Bilton coulda (eV subs Complataly Surrounds each a eee a fe mporent , Theme by preducing trstakion , both, electrical anal physical. This Uctabing CAielectie layer Ts thick enous if f sopiatyt Canatilinu 1s ragbialhla. Avo, Ir AO Tthak is Aoctatea SY Oo a wv possible te dubricali hel nen amd pnp banks Witkin tke Same Ailton Aubshald . Aine Ho mothid “Ker wired additional dates akon Blips , Te becoenes wxrve. EX pensive « This technique rs mostly uned tur date cating preeesind gress To's wausved yx Specialised applications viz, aewApuee and military , whore “higher toast Gertibieat by Superior perckosmance . metallization :- Boll jaw The purpose. Ob hia Subshal proces is be predate a thi metal film Jaypee Fate wilt, daive t& make interttonnectern Of the vastious Components on the Chip, Aluminum fy voually weal dear the 7 . ° Vv metalliaaken of mest He's oO Ir otters eae favererl . advantage , . ty ce 8 galatively @ od tunduelir ow. xt ts eouty we aposit dluminum tlm wading Vacuum cepositum . tit), Aluminium — fnaker 6. Aluminium feo Sow vodtanu, NOn- wockfying Cafmi trontact with — p- Hine Bilton and the Reawily doped n- Gyre Ailium ‘the Film: thickness o4 about 1 fom and tonduchun width of about 2 te aspm are Commun wed. ‘The proms tateor plate Tr a Vacuum evopurabun charper . The pressure fe the eohemsip. chamber ts goducod to the wage o& about to? te 16” law, goed mechameat bonds with Aili, The material t be cvaporalid t& placed moa verdtane theolid —bungatem coil Cox baskear. A a Rid powa domilf eltecm beam ts docused at tke Surhae of th matuial & be evapuvalid, thts Reats ap the matetial G Very Ky P. , = Gamnporodine amd 1b Steaths \aprining ‘oe & Thre. Vapors trowel hn Alro.ight bone, pata the evapyralid mafaculis Rik the Substrate amd — wrdamne theaye Form a thin fil coating, ; Attar the tia film mataltzatun tw ceuritec out, the filo & patterned te produce The required inti ~ Commedtums and bonding pad dontiguratun . Tha to dium Py pholatythographi« proces and aluminium io etched awe qrsm unwanted places by uning ekchants Rea. PRosphuvte acid Clty Pox), Amombly Procossing and Packaging Oe Bach ef the wocagesr. proceed lontaing Aweral Puerclired China , each feeng a Complale coruut , Se, Thane Chips amunt be Aepasiallicl and indlividua My pacleagad A commun metisd Called Armibing uned ter epeuation woiees une 0} a” diamond tipped ts cert Lanen nls the | Guahace of the boaga lng teo| © the vectangulat gid Aeparcaikia te individual ehips. Then the wafer peubricabed along the Avvibe fo and Whe individued chips owe phyweally Aeporaled. Eack chip is Men mounted on a cConamic woofer ancl attached & a Auable pocleersa There awe lhoee different poucleenge Congiguiatine ¢ avetlable, 4 metal Can. paeleerse and cleanfn a. Coramie Vat package @® 3. pred. in ne pacleege C Costount ¢ Ce planbic Wire The metal Cam padcages cvee anedlable m %, 10 ‘oy 12 loads. The Cotamic flat bo dual -th Rin avatlable tw 8, IH, cw th leads, bub even ay oo 3b to At leads one aso anatlable ber apeal cures , This Cotamte parleage — whether oF Hat cow Aual-te | are twhtly duo b& tabsication proces, hut hewe The odvantage ok best hermetic Azalling. are tom most of the general purpose tela awe dual. in line plunke packeges clue We economy, Oo ® - eleage ‘ Fig. Metal can pacteag® Siw. splat package. Ge fig co. Dual-in Dine package. The 4abrieakon 6} disereti devites suck @ as banalix, dtbdes and peussive Componsnrs duch as Yetdalur, induelos and induclia 84 Ailiton plana technolgy An Sntegratid cureuit im gerewal Comat of four diferent fayoo om botlows. 1? pal _ 8 4 3 n nt] TT font bn rt fe eT TY Py LE PL bed be Let Le || ae Leh Lp v- ep) [ P- Zubstrabe Nort is a p- type Ailiton Aubstate upon tohtch Co 00 Pte integralid —cleesite Ts tebricalid . Losier No:2 is a thin (~ 5-25 pum) n mettastfed qruum os 4 Ainge shal extonhim oh the Awbsteale wring epitoatal deposition lechnigne . All achve and passive Components ave dabricated within this layer waing Aeleckve diffusion of leopuni Bes . bayer No:3 js @ very thin Bio, tayor dur preventing (0.02-2h™) — Aitugivn of impunities wherever Tok reguirret (/ using pholaly thographdc technique. bowest No: 4 fs am aluminuro Rouer und Cov t ptm) for Obtaining Intuiconmectiun between Coro ponanks. Fabricakon of Diode - et Diode Atop-1: Wafer prepartation ‘the Alathng matutiat called Ye Aubshaly fa p-lgpe illum — soon asatot prapated fy the Ctochvalake dL waystal growth — process, ; The — woadots aire. usually, 0% lo. em diamelin and O-Hmm Cw hoop) thickness, The veambuily ts approximate teem lo - om. Garres ponding W% Contentratun 04 actoplin atom, Ne = lA x10 atoms | em? Slap -2: Epitaxial Growth, An n- type epitaxtal tle ( 5- 25pm) is grown om the pp Bubshali as dhoun in $3: Th generat it Cam be Zaid that wats w al) ackve ard pousive Components ae feu this teayen The rerisitvily of - epitaxial logger ieneanael Of 0-1 & o-5- em. P- ljpe Aubshale 10AL- om “vastsbui§ , Na eth x iS atomsjem® | n-epi layer poate ifn 0 oe os -3: Oxidat -) Step-3: Oxidation _ & A Aids. lagert od thi J ema y BO loxert Thickness Coon a HL LILLE epi_lage Of tie Order ef o02 & AEM b es na | p- ype Aubshrale. grou on tke epi-tantal fos, |__P gh d Staph: LAslation Diffusion :- Tt we Mono te qabHicali “yt purnber % Compuneots thee we vequine “W Splands which ame jaofatid. For tHe © Ai Og Ts ‘Yemoved yom (nt!) different plates uoing Pholodyth ographie tochnigve. But ‘now only ome Componen fs fabrieadz So, we med “ta Leofanda only, Fur Thi Bio, 1% Temoved fem > Aigfencot plate wning pholi - Ay Phage bchnis ba. “The wocugen é Arffusion dura borg tine Tenypustitios penotrola the n~ ype the p- pe Buds beetle. next Bubjeclid te heawy p~ pe Yntewel Ao that p- (jp epitaxial less aun reac | The aren undo ite Sid, de pr | (Bstend) + | n- by islands that awe Complalily Dept P Autrounded by p- lipe moats . - Ax long as te pn Junchons between the lérehrancks Tgofttion land @re Aald at revere bias , that bs Pe Bipe Ambstrale’, Te pelype Substrate & Feld at a rgabve © Petenhal wil "respect le the 7 pe VAclation island, thene Yegiow Owe. elechically isolated firm each other by two back -lo - bewk diodes | providiog the desired idsfation, Stop-5 : Diffusion :- D Base Arffusion 2). emitter diffsin . P- Sipe Anbstale Bose Aiffusion :- A new Tepes o io, groum over the entire voajes and a maw pattern of Openings 18 quemed wring pRols)y thographie “feebniqne. Now, P- Gpe impurities, Auch as bown are Aiffused Tomah the openings ‘inl te islands of nie epitax tal Ailton. The dap lk of thio Aiffusion muat be tonbrflad Ae that tt dlaey not panebrab Trough to layes ints the Awbshrale. Th This difusiim fs ublieed te deren bese regurs 4 te bramistor, veyolie , ameds 04 th dire and Junction Gpac la, Ta the we fake He node hamfnal dur The Guile. (B) Te ace a owls g deste . Emitter diffusion !~ 6 Aga a new leugee og Bi0o, is grown ovat the enkre woadr ame Aeloctively etched le open & new Window anal n- Yine vinpurities, Auch os phosphesus % deffuned This forms emitter ancl Cathode “wagivn of diucle . li) Hore, it act as @ Cathode of diate. Stop-b : Aluminine Metallisation + - “the chip ts uilker Subjectid We The prowess the foemabion ey a new Bite layr and | | Le | Spey » [__ pi pholily thograph'« lochnigue [P= Bipe Sub carried out. (Anode) ( cethacle} 1 2 Pe pe Aubshali Pe : Open a now Bat of windows at the points whore tonducts “howe. te be mode « A thin loge of dlaminuem Ce pm) es deposited oven Te enkive furtate of the usador . One again by wing phots ly thegraphie @® technique , where the torminals howe te be taleem extent That places memaiming Ares Hee @luminuum ts etched. then fron ‘the torroxpording plates we han take He totmingls Ahouwn ' ty. Example: Fabrieata te Clout Ahoun beloo ™ & ding Bilton chip. 3 n-epi n-epi n-epi N-epi P- Wipe .Subshall Capaei lir Dicde Transislor Resistor Fabricoton of MmosreT '- @ Aluminium Thin film. oxide. C Aid, ) Steps :- NMOS - i. Ailigon Wafer

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