MOTOROLA SC (XSTRS/R F) 68E D MB 6367254 0098613 650 MEMOTE MOTOROLA mm SEMICONDUCTOR Se TECHNICAL DATA. Designer's Data Sheet MTMS50NO5E| TMOS IV Power Field Effect Transistors ——— N-Channel Enhancement-Mode Silicon Gate TmOs POWER FETs | |g, imamnenes | ei ‘This advanced “E” series of TMOS power MOSFETs is designed to withstand high ‘0Ston!, ‘energy in the avalanche and commutation modes. These new energy efficient devices ae Seo offer crainosouree diodes with fast recovery tines. Ose nod for lw —— high sped switching aplesvons in power supple, converters ang ——— trols, these devices are particularly well suited for bridge crevits where diode speed end | ccommutating safe operating area are ertcal, and offer additional salty margin against f Unexpected voltage transients, « Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy inthe Avalanche Made — Unclomped Induettve Switching (UIS) Eneray Capability Specified “ at 109. ‘© Commutating Safe Operating Area (CSOA) Speoited for 7 ° Use in Half ang Full Bridge Cireurts ‘© Souree-to-Drain Diode Recavery Time Compsrable to 8 L_tMos: Discrete Fast Recovery Diode ' Diode is Characterized for Use in Bridge Circuits {© DC Equivalent to IRFZAO (MAXIMUM RATINGS (Tj = 26°C unece othermse nates) ating Symbol | Drain Source Vonage - Voss. | Drain-GateVatage Ros = 1 Ml Voor Gate Source Votage — Continuous Vos, =a Vae arrwsonose —Nomrepetive ty $ §04si| _VoSM 240 vor _| CASE IAG Drain Current — Continuous fie = 25°C) 0 =o ‘Ade ‘TO-204AE Palsea 7 10 Total Power Dasipation @ Te = 25S > 15 Wane Derate above 25 : wre ‘Operaung and Strape Temperature Range Thug | wie | © ‘THERMAL CHARACTERISTICS. Thermal Resitance T cw SJuneion to Cave Bc pal Suncuan to Ambient Raia 2 ‘Maximum Lead Temperature for Soldering Te 0 «| Purposes, 138 from e260 fr 8 seconds Dagar Data for “Wort Ce” Con neg trot at MOTOROLA TMOS POWER MOSFET DATA 3218MOTOROLA SC (XSTRS/R F) BSE D MM 63b7254 009814 597 MEMOTE MTMSONOSE ELECTRICAL CHARACTERISTICS (T¢ = 25°C unless otherwise noted) Characoitie Symbot_[ Min [Mex [Unie OFF CHARACTERISTICS 7 ‘ran Source Breakdown Vaio Vionoss | = [wee (Wes = Op = B25) ero Gate Voge Drain Curent. toss oa ios = Rated Voss. Vos = 0 = x IVs = 08 Rewd Voce Vos ~ 0.7) = 125%) = 2 Gate Body Uenkage Gument. ForwardIVGSF ~ 20 Vas Vos = O Tess too [nade Gt Body Leskage Caron Revers Vgsq = 20 Ve Vos = 9) ‘esse 00 [nae ‘ON CHARACTERISTICS® ‘Gots Tires VoRage vem]; Wee ‘Vos = Vas. 10 = 250 WAI 4 Te woo? ts | 3s State Drain Sours On esstoncs Ves = 10 We. Ip = 25 Ade Toston [=| 0028 | ohm Drain-Source OnVotage (Vag = 10) Vosion! oe ‘ip = 30 Ace = 14 03 = Be ade, Ty = 100) 3 Forward Trenscondustance Wog ~ 18¥.p = 254) Fs = pmo [DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS 7 ~ Uncloped inducive Swtehing Energy_See Figures 14 and 13 Wosa mo Tip = 100, Vop = 254, Te ~ 206, Single Pulse, Non-epewel = Mb = SO Yoo = 26, Te» 26 PAW = 3 a, Duty Cycle = 1%) = Mp = 2A. VoD = 26. T¢ = 1000, PW.» Bon Duy Cycle =) ‘SYWAMMIC CHARACTERISTICS Input Capacitance Tessie See =] 00 [oF Output Cepecanee +h Coss =| r20 Reverse Transfer Capoctance See Fur 16 = = [#00 ‘SWITCHING CHARACTERISTICS? ~ 1000) - Turn Delay Time ‘aio [ z Rae Ti (po = 2541p = 05 Rated ip [—y =—[e Figen = 27 ohms | TunrOF Osay Tie eon won| 70 Fall Tie ci = a Total Gate charge ae 0g | iwi [oo oe Gate Source Ch Ip Raed ngs = 18) Og | 20 | — Gate Drain Core Ce Ogg | 259? ‘SOURCE DRAIN DIODE CHARACTERISTICS® “Forward Ono Veo [wetter | 28 [ee Eon Oe isp = 81 Vos = st ve) | I Forward Tu-On Time “Reon » G00 Ay) fon Lait by stray inductance averse Recover Time te Tre [0 | INTERNAL PACKAGE INDUCTANCE 170-204) Tnerol Dram inductance w ew] 7H \icasirea tom the contact crew on te header closer {ote source pn andthe cantar othe Gl _ Troma! Soure nduetanes TG [ster] — ‘hesured fom the source pi, 025" from th pecage tote source bond p90) 7 i SL MOTOROLA TMOS POWER MOSFET DATA 3220MOTOROLA SC (XSTRS/R F) BBE D MM 6367254 0098615 423 MMMOTL (MTMSONOSE TYPICAL ELECTRICAL CHARACTERISTICS = pot cum anes) z a a ) "os. RAPT SOURCE VOLTAGE HOLS) ‘ost GATE ARESILD VOLTAGE NORMALZED) es es {JUNCTION TEMPERATE Figure 1. On-Region Characteristics Cpe Voltage Variation With Temperature 1 TW « of V1: » E pe 2B in Zot 3 om 6 = t oy 7 « © * . ° o wo Te caro eee) ‘panerormeownnera 2. Transler Charatrstis Vaviation i y 8 g é a é ce i & é a z a | | a “a a Ip aan cue aes Ty. JUNCTION Tear Figure 5. On-Resistance vereus Drain Current Figure 6. On-Resistance Variation With Temperature a MOTOROLA TMOS POWER MOSFET DATA 322baE utr MOTOROLA SC (XSTRS/R F) D MM 6367254 OO98bbb 3bT MMNOTE MSONOSE. ‘SAFE OPERATING AREA INFORMATION job Yas = 2, sib Fase ‘pu MH I piece tr — Fost os RAN TOSOURCE VOLTAGE OLS) Figure 7. Maximum Rated Forward Biased ‘Sale Operating Area |p ota ume Mes FORWARD BIASED SAFE OPERATING AREA fhe maximum drain-to that a device can safely handle when itis forward biased, or when it 18 On, oF being turned on. Because these curves include the lis {ations of simultaneous high voltage and high current ‘upto the rating of the device, they are especially useful to designers of near systams. The curves are based on ‘case temperature of 25°C and a maximum junction tem perature of 150°C. Limitations for repstitive pulses at var Tous case temperatures can be determined by using the thermal response curves. Motorola Application Note, ‘ANSE, “Transient Thermal Resistance-General Data and Its Use” provides detailed instructions SWITCHING SAFE OPERATING AREA The switching sate operating area (SOA of Figure 88 tne boundary thatthe ond ine may traverse wou in Curing damage tothe MOSFET. The fundamental ts fre tne peak current. py and te breakdown voltage, Wienjoss, Th switching SOA shown n Figure 8 is Sp Dleabe for Both ture and turf ofthe davies for Etching times lass than one mironecond Figure 10 Ip oman cum as) Wa og AN TO SOURCE VOLTAGE WOKS! Figure 8. Maximum Rated Switching ‘Sale Operating Area ‘The power averaged over @ complete switching cycle ‘must be fess than Tuumaxt_= Te Rou 2 Eis av vest vi » ee ow GATE RESSTNCE oS) Figure 9. Resistive Switching Time Variation versus Gate Resistance fact = Rae vs APR Fon POWER use TRAN SHON TO TE A Tape ~ Te = Pia 1 in ‘Thermal Response MOTOROLA TMOS POWER MOSFET DATA 3222MOTOROLA SC (XSTRS/R F) GAR D MM 6367254 0098617 2Tb MEMOTE MTMSONOSE ‘COMMUTATING SAFE OPERATING AREA (CSOA) ‘The Commutating Safe Operating Area (CSOA) of Fig- ure 12 defines the limits of safe operation for ommutated source-drain current versus re-epplied drain voltage ‘when the sourcedrain diode hae undergone forward as. The curve shows the limitations of lrn4 and peak Vpg for @ given rate of change of source current. Its applicable when waveforms similar to those of igure 17 are present. Full orhat-bridge PWM OC motor controllers tre commen spplications requiring CSOA deta, Device stresses inereate with increasing rate of change of source current s0 dlyct Is specified with a maximum Value. Higher values of esa require an appropriate do- rating of I, peak Vos oF both. Ukimatety det is im: ‘ted primarily by device, package, and circuit imped ances. Maximum device stress occurs during tyr 98 the {lode goes from conduction to reverse Blocking. Vosipk)'s the peak drain-to-source voltage that the vice must sustain during commutation: jeu is the max imum forward source drain diode curentjust prior tothe onset of commutation, "Va is specified at 80% of Vignjoss to ensure thatthe STRSE AEA Figure 11. Commutating Waveforms SOM stress is maximized ass decays trom Ianto 29V0. 'Rgs should be minimized during commutation. T has only 2 second order effect on CSOA, Stray inductances in Motorola's test circuit are hs sesumad to be practical minimums. dVpgit in excess of 10 Vine was attained with dliat of 400 Ags, z 3 Eo = Na 4 — go a 3 T= oor ves “se Vau= Wl aa Figure 12. Commutating Sate Operating Area “Test Greuit, os ORAM TOSOURCE VOLTAGE WRT jure 12. Commutating Safe Operating Aren (CSOA) fe vipga = (22) (tas) osn- (240) (enone Te) Figure 1. Unclamped indctive Switching Wavatorme 14. Unclamped inductive Switching “Tost Cireut MOTOROLA TMOS POWER MOSFET DATA 3.203MOTOROLA SC (XSTRS/R F) BSE D MM £37254 OO58b18 132 MNOTL MTMSONOSE vos} vos C g 0 z 5 i g 0 g 7 S i 5 2 ww So 5 . we o w = 3 % w o o ie Trenanabaeatoavns eee een eer Vg = 1, PUSE WOT 10, UTY CLE «14 Figure 18. Gate Charge Test Circut MOTOROLA TMOS POWER MOSFET DATA sea