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Citation: AHMED, G.S. ... et al., 2009. FTIR analysis of silane grafted high
density polyethylene. Plastics, Rubber and Composites, 38 (1), pp. 13 - 20
Additional Information:
and Composites
[ c Maney Publishing] and is available at:
http://www.ingentaconnect.com/content/maney/prc
Version: Published
Publisher:
c Maney Publishing
infrared absorbance bands at peaks 795 and 814 cm21 that are influenced by both reacted and
unreacted silane. The effect of silane and peroxide concentrations on the concentration of reacted
and unreacted silane present in the material was determined. The change in unsaturation content
measured at absorbance 1009 cm21 supported these findings.
Keywords: Polyethylene, Silane grafting, Infrared analysis
effect the concentration of additives (VTMOS and then sealed in aluminium bags to prevent premature
peroxide) has on the grafting level. cross-linking in the presence of atmospheric moisture.
Two series of grafted samples were processed. The
composition of the reaction recipe was typically 2 kg of
Experimental HDPE which remained constant. In the first series the
Materials component VTMOS varied 0?0–2?2 wt-% with the
High density polyethylene was supplied by BP BTBB concentration constant at 0?05 wt-% (samples
Chemicals Limited (now Ineos) under the trade name A–F). In the second series the BTBB was varied 0?0–
BP RIGIDEX HDPE (PC4017). The unsaturated polar 0?09 wt-% with the VTMOS kept constant at 1?80 wt-%
monomer, VTMOS, shown below, and used as a (samples G–L). Table 1 shows concentration variations
grafting agent for polymers is a standard laboratory used in processing the grafted samples.
reagent supplied under the trade name Silquest A-171
Silane from Witco (Europe) SA (organosilicones group). Analysis and characterisation
Fourier transform infrared spectroscopy
Samples prepared for qualitative analysis
To obtain infrared spectra a Mattson 3000 FTIR
spectrometer was used. Samples were prepared by melt
pressing to obtain thin films (,0?2 mm thick) by
1,3-bis (tert-butylperoxyisopropyl) benzene, trade compression moulding 0?1–0?2 g polymer granules
between Melinex sheets. The films were placed into a
name Perkadox 14s, supplied by Akzo Nobel Limited
Published by Maney Publishing (c) IOM Communications Ltd
1 Fourier transform infrared spectra of silane grafted 2 Effect of VTMOS concentrations on absorbance peak
polyethylene with varying VTMOS concentration ratio at 1092 cm21
7 Fourier transform infrared spectra of silane grafted and silane cross-linked polyethylene
Published by Maney Publishing (c) IOM Communications Ltd
to fully reacted VTMOS. Therefore it was concluded between the reacted and unreacted VTMOS at
that when polyethylene is reacted with VTMOS a broad 814 cm21, and at 795 cm21 was noted.
single peak is composed of a possible total of four peaks Figure 9 shows that no significant absorption occurred
that overlap with each other (two peaks contributing to at 795 cm21 in the VTMOS standard spectrum. Therefore
the unreacted VTMOS and two peaks for the reacted there is no interference between the peak at 795 cm21 and
VTMOS). This can be seen in Fig. 8. the unreacted peak at 814 cm21. As a result of this, the
Calibration graphs were prepared using the standard peak height at 795 cm21 can be used to monitor the
solutions of VTMOS and octyltrimethoxysilane (used as concentration of reacted silane directly.
a model compound for a fully reacted sample). The two Octyltrimethoxysilane shows a broad peak in the
absorbance peaks in the region of interest (800 cm21 800 cm21 region as shown in Fig. 10, therefore similar
region) for VTMOS are 771 and 814 cm21, while absorbance is observed at 795 and 814 cm21.
octyltrimethoxysilane has a broad peak from 795 to Using the Beer–Lambert law (A5ecl) the extinction
833 cm21, as shown in Figs. 9 and 10, which show coefficient was calculated for the absorbance peaks at 795
expansions of the 800 cm21 region inset. The peak and 814 cm21 for both the silane and octyltrimethoxy-
heights for the maximum peaks were used in both the silane. The absorbance at 795 cm21 will contribute only
VTMOS (814 cm21) and octyltrimethoxysilane to the reacted silane at 795 cm21 whereas the absorbance
21
(795 cm ) and were measured using the FTIR software at 814 cm21 corresponds to both the reacted and
to construct the calibration graphs. Any interference unreacted silane at 814 cm21. The extinction coefficient
value for the VTMOS absorbance peak at 814 cm21 was where CR is concentration reacted silane and CU is
found to be 263?40 wt-%21 mm21. concentration unreacted silane
The extinction coefficient value for the octyltri- After dividing equation (1) by (2) to eliminate
methoxysilane, at both wavelengths 795 and 814 cm21 thickness, and substituting the calculated values for
was calculated to be 62?59 wt-%21 mm21. extinction coefficients it can be shown that
Further calculations were conducted to establish a A795 1
method that was used to obtain the concentration of ~ (3)
A814 1z4:2 CCU
reacted and unreacted VTMOS in a sample processed on R
the extruder, which would be applicable to any VTMOS Even if VTMOS was lost during the processing of the
grafted HDPE samples processed on the extruder. samples it did not affect the calculated percentage
Taking into account both the absorbance peaks at 795 concentration of reacted and unreacted VTMOS in the
and 814 cm21, the following applies. grafted samples, since concentration ratios are used in
equation (3).
A795 ~e795R CR l (1) Equations (1)–(3), were used to calculate the concen-
tration of reacted and unreacted VTMOS in the VTMOS
A814 ~e814R CR lze814U CU l (2) grafted polyethylene samples processed on the extruder.
13 Effect of VTMOS (wt-%) on unsaturation content 14 Effect of peroxide (wt-%) on unsaturation content
Figure 13 shows that initially as the VTMOS con- This method has been proven to be applicable to any
centration increases there is a decrease in the unsatura- production VTMOS grafted polyethylene material
tion content of the VTMOS, this is because there is an processed on compounding extruders.
increase in reaction taking place and since the reaction
occurs via the vinyl group of the VTMOS monomer Acknowledgement
Published by Maney Publishing (c) IOM Communications Ltd