CNY17-2,CNY17-3,CNY17-4

TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

CNY17-2,CNY17-3,CNY17-4
Unit in mm
AC Line / Digital Logic Isolator

Digital Logic / Digital Logic Isolator

Telephone Line Receiver
Twisted Pair Line Receiver
High Frequency Power Supply Feedback Control
Relay Contact Monitor

The TOSHIBA Corporation CNY17 consist of a gallium arsenide infrared

emitting diode coupled with a silicon photo transistor in a dual in−line
package.

· Small package size and low cost

· Fast switching speeds: 5µs (typ.)
· High DC current transfer ratio: CTR(IF = 10mA, VCE = 5V)
CNY17−2: 63~125%
CNY17−3: 100~200% TOSHIBA 11−7A8
CNY17−4: 160~320% Weight: 0.4 g
· High isolation resistance: 1011Ω (typ.)
· High isolation voltage: 4400V (min.) Pin Configuration

1 6

2 5

3 4

1 : Anode
2 : Cathode
3 : N.C.
4 : Emitter
5 : Collector
6 : Base

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Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 60 mA
Forward current derating ∆IF / °C 0.8 * mA / °C
Peak forward current (Note) IPF 3 A
LED

Power dissipation PD 100 mW

Power dissipation derating ∆PD / °C 1.33 * mW / °C
Reverse voltage VR 6 V
Collector-emitter voltage BVCEO 70 V
Photo-transistor

Collector-base voltage BVCBO 70 V

Emitter-collector voltage BVECO 7 V
Collector current IC 100 mA

Power dissipation PC 150 mW

Power dissipation derating ∆PC / °C 2.0 * mW / °C

Storage temperature Tstg -55~150 °C
Operating temperature Topr -55~100 °C
Coupled

Lead soldering temperature

Tsol 260 °C
(10 s)
Total package dissipation PT 200 mW
Total package power
∆PT / °C 2.6 * mW / °C
dissipation derating

(Note)Pulse width 1µs, 300pps.

* Above 25°C ambient.

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℃)
Electrical Characteristics (Ta = 25℃

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 60 mA ― 1.35 1.65 V

LED

Reverse current IR VR = 3 V ― ― 10 µA
Capacitance CD V = 0, f = 1 MHz ― 30 ― pF
DC forward current
hFE VCE = 5, IC = 500 µA 100 200 ―
gain
Collector-emitter
V (BR) CEO IC = 1 mA, IF = 0 70 ― ― V
breakdown voltage
Photo-transistor

Collector-base breakdown
V (BR) CBO IC = 100 µA, IF = 0 70 ― ― V
voltage
Emitter-collector
V (BR) ECO IE = 100 µA, IF = 0 7 ― ― V
breakdown voltage
Collector dark current ICEO VCE = 10 V, IF = 0 ― 1 50 nA
Collector dark current ICBO VCB = 10 V, IF = 0 ― 0.1 20 nA
Collector-emitter
CCE V = 0, f = 1 MHz ― 10 ― pF
capacitance
CNY17-2 63 ― 125
Current
transfer CNY17-3 CTR IF = 10 mA, VCE = 5 V 100 ― 200 %
ratio
CNY17-4 160 ― 320
Saturation voltage VCE (sat) IF = 10 mA, IC = 2.5 mA ― ― 0.4 V
Capacitance input to
Coupled

CS V = 0, f = 1 MHz ― 0.8 ― pF
output
Isolation resistance RS V = 500 V ― 1011 ― Ω
DC isolation voltage BVS DC 1 minute 4400 ― ― V
VCE = 10 V, IC = 2 mA
Rise fall time tr / tf ― 5 10 µs
RL = 100 Ω
Rise / fall time photo VCB = 10 V, ICB = 50 µA
tr / tf ― 200 ― ns
diode RL = 100Ω

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IF – Ta PC – Ta
100 200

80 160
Allowable forward current

Allowable collector power

dissipation PC (mW)
60 120
IF (mA)

40 80

20 40

0 0
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

IFP – DR IF – VF
5000 100
Pulse width ≤ 1 µs Ta = 25°C
3000
Ta = 25°C 50
30
Allowable pulse forward current

(mA)

1000
10
500
Forward current IF
IFP (mA)

300 5
3

100
1

50
0.5
30 0.3

10 0.1
10-3 10-2 10-1 100 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Duty cycle ratio DR Forward voltage VF (V)

∆VF / ∆Ta – IF IFP – VFP

-3.2 1000
Forward voltage temperature coefficient

500
-2.8
(mA)

300
∆VF / ∆Ta (mV / °C)

-2.4
IFP

100

-2.0
Pulse forward current

50
30
-1.6

10
-1.2
Pulse width ≤10 µs
5
Repetitive
-0.8 3
frequency = 100 Hz
Ta = 25°C
-0.4 1
0.1 0.3 0.5 1 3 5 10 30 50 0.6 1.0 1.4 1.8 2.2 2.6

Forward current IF (mA) Pulse forward voltage VFP (V)

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IC / IF IC / IF – IF
100 400
Ta = 25°C Ta = 25°C
VCE = 10 V VCE = 10 V
50 VCE = 0.4 V VCE = 0.4 V
300

Current transfer ratio

30
Sample A

IC / IF (%)
200
(mA)

10
Sample A
IC

100
Collector current

Sample B
3

0
1 3 10 30 100 300

Sample B Forward current IF (mA)

1

0.5

0.2 IC – VCE
1 3 5 10 30 50 100
60
Ta = 25°C
Forward current IF (mA) 20 mA

50
(mA)

15 mA

40
IC
Collector current

30 10 mA

20

IF = 5 mA
10

0
0 2 4 6 8 10 12 14

IC – Ta Collector-emitter voltage VCE (V)

500
VCE = 10 V
300
IF = 50 mA

100
VCE (sat) – Ta
50
(mA)

0.5
30 10 mA
0.3
IC

5 mA
Collector-emitter saturation

10
Collector current

voltage VCE (sat) (V)

3 0.1

1 mA
0.05
1

0.5 0.03
0.5 mA
0.3

0.1 0.01
-60 -40 -20 0 20 40 60 80 100 -60 -40 -20 0 20 40 60 80 100

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

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ICEO – Ta ID – RBE
10
VCE = 24 V
101
5 Ta = 100°C
3
VCE = 24 V

(µA)
10 V
1
100
(µA)

Dark current ID
0.5
Collector dark current ICEO

0.3
5V
10-1
0.1

0.05
0.03
10-2

0.01
100k 1M 10M ∞

Base-emitter resistance RBE (Ω)

10-3

10-4
0 20 40 60 80 100 120

Ambient temperature Ta (°C)

Switching Characteristics – RL RBE – Switching Characteristics

(Saturated Operation) (Saturated Operation)
1000 VCC = 5 V
Ta = 25°C VCC = 5 V
IF = 5 mA RL
tr
IF
500 VOUT IF 4.3kΩ IF

VOUT IF 90%
300 VOUT
10%
90%
RBE

VOUT
VOUT 5V 90%
td ts 10%
0V 10%
td ts
td ts tr tf
100 tr tf
tr tf
(µs)

50 ts tr
Switching time

100
30
50
(µs)

30
Switching time

10 ts

10
5
tf tf
5
3
3 td

td

1 1
0.5 1 3 5 10 30 50 3M 1M 300 100 30 10k

Load resistance RL (kΩ) Base-emitter resistance RBE (Ω)

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RESTRICTIONS ON PRODUCT USE 000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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