IRF720, SiHF720

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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt rating
VDS (V) 400 V Available
RDS(on) (Ω) VGS = 10 V 1.8 • Repetitive avalanche rated
• Fast switching
RoHS*
Qg (Max.) (nC) 20 COMPLIANT
Qgs (nC) 3.3 • Ease of paralleling
Qgd (nC) 11 • Simple drive requirements
Configuration Single • Material categorization: for definitions of compliance
D please see www.vishay.com/doc?99912
Note
TO-220AB * This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
G Please see the information/tables in this datasheet for details.

DESCRIPTION
S Third generation power MOSFETs from Vishay provide the
D
G S designer with the best combination of fast switching,
N-Channel MOSFET ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF720PbF
Lead (Pb)-free
SiHF720-E3
IRF720
SnPb
SiHF720

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 400 V
Gate-Source Voltage VGS ± 20 V
TC = 25 °C 3.3
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 2.1 A
Pulsed Drain Currenta IDM 13
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy b EAS 190 mJ
Repetitive Avalanche Current a IAR 3.3 A
Repetitive Avalanche Energy a EAR 5.0 mJ
Maximum Power Dissipation TC = 25 °C PD 50 W
Peak Diode Recovery dV/dt c dV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150
°C
Soldering Recommendations (Peak Temperature) d for 10 s 300
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 30 mH, Rg = 25 Ω, IAS = 3.3 A (see fig. 12).
c. ISD ≤ 3.3 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.

S14-2355-Rev. C, 08-Dec-14 1 Document Number: 91043

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 2.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 400 - - V

VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.51 - V/°C

Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V

Gate-Source Leakage IGSS VGS = ± 20 - - ± 100 nA
VDS = 400 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 2.0 A b - - 1.8 Ω
Forward Transconductance gfs VDS = 50 V, ID = 2.0 A b 1.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 410 -
Output Capacitance Coss VDS = 25 V, - 120 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 47 -
Total Gate Charge Qg ID = 3.3 A, - - 20
Gate-Source Charge Qgs VGS = 10 V VDS = 320 V, - - 3.3 nC
Gate-Drain Charge Qgd see fig. 6 and 13 b - - 11
Turn-On Delay Time td(on) - 10 -
Rise Time tr - 14 -
VDD = 200 V, ID = 3.3 A ns
Turn-Off Delay Time td(off) Rg = 18 Ω, RD = 56 Ω, see fig. 10 b - 30 -
Fall Time tf - 13 -

Internal Drain Inductance LD Between lead, D

- 4.5 -
6 mm (0.25") from
package and center of nH
G

Internal Source Inductance LS die contact - 7.5 -

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D

- - 3.3
showing the
A
integral reverse G

Pulsed Diode Forward Current a ISM p - n junction diode S - - 13

Body Diode Voltage VSD TJ = 25 °C, IS = 3.3 A, VGS = 0 V b - - 1.6 V

Body Diode Reverse Recovery Time trr - 270 600 ns
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b
Body Diode Reverse Recovery Charge Qrr - 1.4 3.0 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

S14-2355-Rev. C, 08-Dec-14 2 Document Number: 91043

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

RDS(on), Drain-to-Source On Resistance

VGS 3.5
101 ID = 3.3 A
Top 15 V VGS = 10 V
10 V 3.0
8.0 V
ID, Drain Current (A)

7.0 V
6.0 V 2.5
5.5 V

(Normalized)
100
5.0 V
Bottom 4.5 V 2.0

1.5

10-1 4.5 V
1.0

20 µs Pulse Width 0.5

TC = 25 °C
10-2 0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91043_01 VDS, Drain-to-Source Voltage (V) 91043_04 TJ, Junction Temperature (°C)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature

101 1000
VGS VGS = 0 V, f = 1 MHz
Top 15 V Ciss = Cgs + Cgd, Cds Shorted
10 V Crss = Cgd
800
8.0 V Coss = Cds + Cgd
ID, Drain Current (A)

Capacitance (pF)

7.0 V
100 6.0 V
5.5 V 600 Ciss
4.5 V
5.0 V
Bottom 4.5 V
400 Coss
10-1

200 Crss

20 µs Pulse Width
TC = 150 °C
10-2 0
10-1 100 101 100 101

91043_02 VDS, Drain-to-Source Voltage (V) 91043_05 VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

10 20
TJ = 25 °C ID = 3.3 A
VGS, Gate-to-Source Voltage (V)

TJ = 150 °C VDS = 320 V

16
ID, Drain-to-Source Current (A)

VDS = 200 V
1
12 VDS = 80 V

8
0.1

4
For test circuit
VDS = 26.2V see figure 13
0.01 0
4 5 6 7 8 9 10 0 5 10 15 20 25
VGS, Gate-to-Source Voltage (V)
91043_06 QG, Total Gate Charge (nC)

Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

S14-2355-Rev. C, 08-Dec-14 3 Document Number: 91043

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF720, SiHF720
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Vishay Siliconix

3.5
101
ISD, Reverse Drain Current (A)

3.0

ID, Drain Current (A)

2.5

2.0
150 °C
100
1.5
25 °C
1.0

0.5
VGS = 0 V
10-1 0.0
0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150
91043_07 VSD, Source-to-Drain Voltage (V) 91043_09 TC, Case Temperature (°C)

Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature

RD
102
Operation in this area limited VDS
5
by RDS(on)
2 VGS
D.U.T.
10 10 µs
ID, Drain Current (A)

RG
5 +
- VDD
100 µs
2
1 1 ms 10 V
5 Pulse width ≤ 1 µs
10 ms Duty factor ≤ 0.1 %
2

0.1
Fig. 10a - Switching Time Test Circuit
5
TC = 25 °C
2 TJ = 150 °C VDS
Single Pulse
10-2 2 5 2 5 2 5 2 5 90 %
0.1 1 10 102 103

91043_08 VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area 10 %

VGS
td(on) tr td(off) tf

Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

0 − 0.5
1
0.2
0.1 PDM
0.05
0.1 0.02 t1
0.01 Single Pulse t2
(Thermal Response) Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91043_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S14-2355-Rev. C, 08-Dec-14 4 Document Number: 91043

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF720, SiHF720
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Vishay Siliconix

L
VDS
Vary tp to obtain QG
required IAS VGS

RG D.U.T + QGS QGD

V DD
-
I AS VG
10 V
tp 0.01 Ω
Charge

Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform

Current regulator
Same type as D.U.T.

VDS
50 kΩ
tp 12 V 0.2 µF
VDD 0.3 µF

+
VDS
D.U.T. -
VDS
VGS

3 mA
IAS

IG ID
Current sampling resistors

Fig. 12b - Unclamped Inductive Waveforms Fig. 13b - Gate Charge Test Circuit

500
ID
EAS, Single Pulse Energy (mJ)

Top 1.5 A
400 2.1 A
Bottom 3.3 A

300

200

100

VDD = 50 V
0
25 50 75 100 125 150

91043_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

S14-2355-Rev. C, 08-Dec-14 5 Document Number: 91043

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF720, SiHF720
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Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91043.

S14-2355-Rev. C, 08-Dec-14 6 Document Number: 91043

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A MILLIMETERS INCHES
E DIM.
MIN. MAX. MIN. MAX.
F
A 4.24 4.65 0.167 0.183
ØP b 0.69 1.02 0.027 0.040
Q

b(1) 1.14 1.78 0.045 0.070

H(1)

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
1 2 3
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1)

L(1) 3.33 4.04 0.131 0.159

M* ØP 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
L

DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

C
b
e
J(1)
e(1)

Package Picture
ASE Xi’an

Revison: 14-Dec-15 1 Document Number: 66542

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2019 1 Document Number: 91000