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Bta 12 600c PDF
Bta 12 600c PDF
MAIN FEATURES: A2
IGT (Q1) 10 to 50 mA
A1
A2
DESCRIPTION G
VDRM/VRRM
VDSM/VRSM Non repetitive surge peak off-state tp = 10 ms Tj = 25°C V
voltage + 100
■ STANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB12
Unit
C B
IGT (1) I - II - III 25 50 mA
MAX.
VD = 12 V RL = 30 Ω IV 50 100
VGT ALL MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V
IH (2) IT = 500 mA MAX. 25 50 mA
IL IG = 1.2 IGT I - III - IV MAX. 40 50 mA
II 80 100
dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C MIN. 200 400 V/µs
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms Tj = 125°C MIN. 5 10 V/µs
STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
VT (2) ITM = 17 A tp = 380 µs Tj = 25°C MAX. 1.55 V
Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V
Rd (2) Dynamic resistance Tj = 125°C MAX. 35 mΩ
IDRM VDRM = VRRM Tj = 25°C 5 µA
MAX.
IRRM Tj = 125°C 1 mA
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BTA/BTB12 and T12 Series
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) D²PAK/TO-220AB 1.4 °C/W
TO-220AB Insulated 2.3
Rth(j-a) Junction to ambient S=1 cm² D²PAK 45 °C/W
TO-220AB
60
TO-220AB Insulated
PRODUCT SELECTOR
Voltage (xxx)
Part Number Sensitivity Type Package
600 V 800 V
BTA/BTB12-xxxB X X 50 mA Standard TO-220AB
BTA/BTB12-xxxBW X X 50 mA Snubberless TO-220AB
BTA/BTB12-xxxC X X 25 mA Standard TO-220AB
BTA/BTB12-xxxCW X X 35 mA Snubberless TO-220AB
BTA/BTB12-xxxSW X X 10 mA Logic level TO-220AB
ORDERING INFORMATION
BT A 12 - 600 BW (RG)
TRIAC PACKING MODE
SERIES Blank: Bulk
SENSITIVITY & TYPE RG: Tube
INSULATION: B: 50mA STANDARD
A: insulated VOLTAGE: BW: 50mA SNUBBERLESS
B: non insulated 600: 600V C: 25mA STANDARD
800: 800V CW: 35mA SNUBBERLESS
CURRENT: 12A SW: 10mA LOGIC LEVEL
T 12 35 - 600 G (-TR)
TRIAC
SERIES
PACKAGE:
CURRENT: 12A G: D2PAK
VOLTAGE: PACKING MODE:
600: 600V Blank: Tube
800: 800V -TR: Tape & Reel
SENSITIVITY:
35: 35mA
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BTA/BTB12 and T12 Series
OTHER INFORMATION
Fig. 1: Maximum power dissipation versus RMS Fig. 2-1: RMS on-state current versus case
on-state current (full cycle). temperature (full cycle).
P (W) IT(RMS) (A)
16 14
14 13 BTB/T12
12
12 11
BTA
10
10 9
8
8 7
6
6 5
4 4
3
2 IT(RMS)(A) 2 Tc(°C)
1
0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 0 25 50 75 100 125
Fig. 2-2: RMS on-state current versus ambient Fig. 3: Relative variation of thermal impedance
temperature (printed circuit board FR4, copper versus pulse duration.
thickness: 35µm),full cycle.
2.5
2.0
1E-1 Zth(j-a)
1.5
1.0
0.5 Tamb(°C) tp(s)
0.0 1E-2
0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
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BTA/BTB12 and T12 Series
Fig. 4: On-state characteristics (maximum Fig. 5: Surge peak on-state current versus
values). number of cycles.
Tj max 100
One cycle
90 Non repetitive
Tj initial=25°C
80
10 70
Tj=25°C 60
Repetitive
50 Tc=90°C
40
Tj max.
Vto = 0.85 V
30
Rd = 35 mΩ 20
VTM(V) 10 Number of cycles
1 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000
Fig. 6: Non-repetitive surge peak on-state Fig. 7: Relative variation of gate trigger current,
current for a sinusoidal pulse with width holding current and latching current versus
tp < 10ms, and corresponding value of I²t. junction temperature (typical values).
2.0
IGT
ITSM
1.5
100 I²t IH & IL
1.0
0.5
tp (ms) Tj(°C)
10 0.0
0.01 0.10 1.00 10.00 -40 -20 0 20 40 60 80 100 120 140
Fig. 8: Relative variation of critical rate of Fig. 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical decrease of main current versus junction
values). temperature.
2
0.8
0.4 1 Tj (°C)
(dV/dt)c (V/µs)
0.0 0
0.1 1.0 10.0 100.0 0 25 50 75 100 125
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BTA/BTB12 and T12 Series
Rth(j-a) (°C/W)
80
D²PAK
70
60
50
40
30
20
10 S(cm²)
0
0 4 8 12 16 20 24 28 32 36 40
DIMENSIONS
10.30 5.08
1.30
3.70
8.90
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BTA/BTB12 and T12 Series
DIMENSIONS
B C REF. Millimeters Inches
b2
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