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Universidad Nacional de Misiones

DISPOSITIVOS ELECTRONICOS Departamento de Electrónica

Tema: LISTADO DE SEMICONDUCTORES

DARLINGTONS NPN, PARA PROPÓSITOS GENERALES


hFE
Dispositivo Ic Con (A) VCEO Ptot TC= Encapsulado Complem.
(V) 25°C (W)
Min @Ic (A)

BD645 8 60 62.5 750 3 TO-220 BD646

BD647 8 80 62.5 750 3 TO-220 BD648

BD649 8 100 62.5 750 3 TO-220 BD650

BD651 8 120 62.5 750 3 TO-220 BD652

BD895 8 45 70 750 3 TO-220 BD896

BD895A 8 45 70 750 4 TO-220 BD896A

BD897 8 60 70 750 3 TO-220 BD898

BD897A 8 60 70 750 4 TO-220 BD898A

BD899 8 80 70 750 3 TO-220 BD900

BD899A 8 80 70 750 4 TO-220 BD900A

BD901 8 100 70 750 3 TO-220 BD902

BDT61 4 60 50 750 1.5 TO-220 BDT60


BDT61A 4 80 50 750 1.5 TO-220 BDT60A

BDT61B 4 100 50 750 1.5 TO-220 BDT60B

BDT61C 4 120 50 750 1.5 TO-220 BDT60C

BDV65 12 60 125 1000 5 SOT-93 BDV64

BDV65A 12 80 125 1000 5 SOT-93 BDV64A

BDV65B 12 100 125 1000 5 SOT-93 BDV64B

BDV65C 12 120 125 1000 5 SOT-93 BDV64C

BDW23 6 45 50 100 6 TO-220 BDW24

BDW23A 6 60 50 100 6 TO-220 BDW24A

BDW23B 6 80 50 100 6 TO-220 BDW24B

BDW23C 6 100 50 100 6 TO-220 BDW24C

BDW53 4 45 40 100 4 TO-220 BDW54

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Ing. Kurtz Victor H, Ing. Olsson Jorge , Graziadei Mauro Año 2008
Página 1 de 3
Universidad Nacional de Misiones
DISPOSITIVOS ELECTRONICOS Departamento de Electrónica

Tema: LISTADO DE SEMICONDUCTORES

hFE
Dispositivo Ic Con (A) VCEO Ptot TC= Encapsulado Complem.
(V) 25°C (W)
Min @Ic (A)

BDW53A 4 60 40 100 4 TO-220 BDW54A

BDW53B 4 80 40 100 4 TO-220 BDW54B


BDW53C 4 100 40 100 4 TO-220 BDW54C

BDW53D 4 120 40 100 4 TO-220 BDW54D

BDW63 6 45 60 100 6 TO-220 BDW64

BDW63A 6 60 60 100 6 TO-220 BDW64A

BDW63B 6 80 60 100 6 TO-220 BDW64B

BDW63C 6 100 60 100 6 TO-220 BDW64C

BDW63D 6 120 60 100 6 TO-220 BDW64D

BDW73 8 45 80 100 8 TO-220 BDW74

BDW73A 8 60 80 100 8 TO-220 BDW74A

BDW73B 8 80 80 100 8 TO-220 BDW74B

BDW73C 8 100 80 100 8 TO-220 BDW74C

BDW73D 8 120 80 100 8 TO-220 BDW74D

BDW83 15 45 150 100 15 SOT-93 BDW84

BDW83A 15 60 150 100 15 SOT-93 BDW84A


BDW83B 15 80 150 100 15 SOT-93 BDW84B
BDW83C 15 100 150 100 15 SOT-93 BDW84C

BDW83D 15 120 150 100 15 SOT-93 BDW84D

BDW93 12 45 80 100 10 TO-220 BDW94

BDW93A 12 60 80 100 10 TO-220 BDW94A

BDW93B 12 80 80 100 10 TO-220 BDW94B

BDW93C 12 100 80 100 10 TO-220 BDW94C

BDX33 10 45 70 750 3 TO-220 BDX34

BDX33A 10 60 70 750 3 TO-220 BDX34A

BDX33B 10 80 70 750 3 TO-220 BDX34B


___________________________________________________________________________________________________
Ing. Kurtz Victor H, Ing. Olsson Jorge , Graziadei Mauro Año 2008
Página 2 de 3
Universidad Nacional de Misiones
DISPOSITIVOS ELECTRONICOS Departamento de Electrónica

Tema: LISTADO DE SEMICONDUCTORES

hFE
Dispositivo Ic Con (A) VCEO Ptot TC= Encapsulado Complem.
(V) 25°C (W)
Min @Ic (A)

BDX33C 10 100 70 750 3 TO-220 BDX34C

BDX33D 10 120 70 750 3 TO-220 BDX34D


BDX53 8 45 60 750 3 TO-220 BDX54

BDX53A 8 60 60 750 3 TO-220 BDX54A

BDX53B 8 80 60 750 3 TO-220 BDX54B

BDX53C 8 100 60 750 3 TO-220 BDX54C

TIP100 8 60 80 200 8 TO-220 TIP105

TIP101 8 80 80 200 8 TO-220 TIP106

TIP102 8 100 80 200 8 TO-220 TIP107

TIP110 4 60 50 500 2 TO-220 TIP115

TIP111 4 80 50 500 2 TO-220 TIP116

TIP112 4 100 50 500 2 TO-220 TIP117

TIP120 5 60 65 1000 3 TO-220 TIP125

TIP121 5 80 65 1000 3 TO-220 TIP126

TIP122 5 100 65 1000 3 TO-220 TIP127

TIP130 8 60 70 1000 4 TO-220 TIP135


TIP131 8 80 70 1000 4 TO-220 TIP136
TIP132 8 100 70 1000 4 TO-220 TIP137

TIP140 10 60 125 500 10 SOT-93 TIP145

TIP141 10 80 125 500 10 SOT-93 TIP146

TIP142 10 100 125 500 10 SOT-93 TIP147

TIPP110 2 60 0.8 500 2 TO-92 TIPP115

TIPP111 2 80 0.8 500 2 TO-92 TIPP116

TIPP112 2 100 0.8 500 2 TO-92 TIPP117

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Ing. Kurtz Victor H, Ing. Olsson Jorge , Graziadei Mauro Año 2008
Página 3 de 3

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