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Electronic Circuits
Lecture 33
CMOS Characteristics
Jose E. Schutt-Aine
Electrical & Computer Engineering
University of Illinois
jesa@Illinois.edu
ECE 342 – Jose Schutt‐Aine 1
Digital Circuits
ECE 342 – Jose Schutt‐Aine 2
Voltage Transfer Characteristics (VTC)
The static operation of a logic circuit is determined by its VTC
NM L VIL VOL
• In high state: noise margin is
NMH
NML NMH
NM H VOH VIH
• An ideal VTC will maximize noise VIL and VIH are the points where the
margins slope of the VTC=-1
Optimum: NM L NM H VDD / 2
ECE 342 – Jose Schutt‐Aine 3
Switching Time & Propagation Delay
input
output
ECE 342 – Jose Schutt‐Aine 4
Switching Time & Propagation Delay
1
Inverter propagation delay: t p t pLH t pHL
2
ECE 342 – Jose Schutt‐Aine 5
VTC and Noise Margins
For a logic-circuit family employing a 3-V supply, suggest an
ideal set of values for Vth, VIL, VIH, VOH, NML, NMH. Also, sketch
the VTC. What value of voltage gain in the transition region
does your ideal specification imply?
ECE 342 – Jose Schutt‐Aine 6
VTC and Noise Margins
NM H VOH VIH 3.0 1.5 1.5V
ECE 342 – Jose Schutt‐Aine 7
CMOS Noise Margins
When inverter threshold is at VDD/2, the noise margin NMH and NML are
equalized
3 2
NM H NM L VDD Vth
8 3
Noise margins are typically around 0.4 VDD; close to half power-supply voltage
CMOS ideal from noise-immunity standpoint
ECE 342 – Jose Schutt‐Aine 8
CMOS Inverter VTC
QP and QN are
matched
ECE 342 – Jose Schutt‐Aine 9
CMOS Inverter VTC
Derivation
Assume that transistors are matched
Vertical segment of VTC is when both QN and QP are saturated
No channel length modulation effect = 0
Vertical segment occurs at vi=VDD/2
VIL: maximum permitted logic-0 level of input (slope=-1)
VIH: minimum permitted logic-1 level of input (slope=-1)
To determine VIH, assume QN in triode region and QP in saturation region
1 2 1
vI Vt vo vo VDD vI Vt
2
2 2
Next, we differentiate both sides relative to vi
dvo dvo
vI Vt vo vo VDD vI Vt
dvI dvI
ECE 342 – Jose Schutt‐Aine 10
CMOS Inverter VTC
VDD
vo VIH
2
After substitutions, we get
1
VIH 5VDD 2Vt
8
Same analysis can be repeated for VIL to get
1
VIL 3VDD 2Vt
8
ECE 342 – Jose Schutt‐Aine 11
CMOS Inverter Noise Margins
1
VIH 5VDD 2Vt
8
1
VIL 3VDD 2Vt
8
1
NM H 3VDD 2Vt
8
ECE 342 – Jose Schutt‐Aine 12
Matched CMOS Inverter VTC
W n W
L p p L n
Symmetrical transfer
characteristics is obtained via
matching equal current driving
capabilities in both directions
(pull-up and pull-down)
ECE 342 – Jose Schutt‐Aine 13
VTC and Noise Margins - Problem
An inverter is designed with equal-sized NMOS and PMOS
transistors and fabricated in a 0.8-micron CMOS technology
for which kn’ = 120 A/V2, kp’ = 60 A/V2, Vtn =|Vtp|=0.7 V, VDD
= 3V, Ln=Lp = 0.8 m, Wn = Wp = 1.2 m, find VIL, VIH and the
noise margins.
Vt = 0.7V
W 1 2 1 ' W
k VI Vt Vo Vo k p VDD VI Vt
' 2
n
L n 2 2 L p
ECE 342 – Jose Schutt‐Aine 14
VTC and Noise Margins – Problem (cont’)
Vo Vo
: 4 VI Vt 4Vo 4Vo 2 VDD VI Vt (1)
VI VI VI
Vo
VI VIH and 1
VI
ECE 342 – Jose Schutt‐Aine 15
VTC and Noise Margins – Problem (cont’)
ECE 342 – Jose Schutt‐Aine 16
VTC and Noise Margins – Problem (cont’)
For VIL: QN is in saturation and QP in triode
1 ' W ' W 1 2
kn VI Vt k p VDD VI Vt VDD Vo VDD Vo
2
2 L n L p 2
1
VI 0.7 3 VI 0.7 3 Vo 3 Vo
2 2
(1)
2
1
VI 0.7 2.3 VI 3 Vo 3 Vo
2 2
2
Vo Vo
2 VI 0.7 2.3 VI 3 Vo 3 Vo
VI VI VI
ECE 342 – Jose Schutt‐Aine 17
VTC and Noise Margins – Problem (cont’)
Vo
VI VIL and 1
VI
2VIL 1.4 2.3 VIL 3 Vo 3 Vo
2
VIL Vo 1.15
3
1
From (1) : VIL 0.7 2.3 VIL 3 Vo 3 Vo
2 2
2
1
0.66Vo 1.85 3.45 0.66Vo 3 Vo 3 Vo
2 2
2
ECE 342 – Jose Schutt‐Aine 18
VTC and Noise Margins – Problem (cont’)
Vo 2.96 V VIL 0.81 V
Noise Margins:
NM H 3 1.52 1.48 V
NM L 0.81 0 0.81 V
ECE 342 – Jose Schutt‐Aine 19