2SJ160, 2SJ161, 2SJ162

Silicon P-Channel MOS FET

Application

Low frequency power amplifier

Complementary pair with 2SK1056, 2SK1057 and 2SK1058

Features

• Good frequency characteristic

• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
2SJ160, 2SJ161, 2SJ162
Outline

TO-3P

G 1
2
3
1. Gate
2. Source
(Flange)
S
3. Drain

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage 2SJ160 VDSX –120 V
2SJ161 –140
2SJ162 –160
Gate to source voltage VGSS ±15 V
Drain current ID –7 A
Body to drain diode reverse drain current I DR –7 A
1
Channel dissipation Pch* 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C

2
 2SJ160, 2SJ161, 2SJ162
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SJ160 V(BR)DSX –120 — — V I D = –10 mA , VGS = 10 V
breakdown voltage 2SJ161 –140 — — V
2SJ162 –160 — — V
Gate to source breakdown V(BR)GSS ±15 — — V I G = ±100 µA, VDS = 0
voltage
Gate to source cutoff voltage VGS(off) –0.15 — –1.45 V I D = –100 mA, VDS = –10 V
Drain to source saturation VDS(sat) — — –12 V I D = –7 A, VGD = 0*1
voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S I D = –3 A, VDS = –10 V*1
Input capacitance Ciss — 900 — pF VGS = 5 V, VDS = –10V,
Output capacitance Coss — 400 — pF f = 1 MHz
Reverse transfer capacitance Crss — 40 — pF
Turn-on time t on — 230 — ns VDD = –20 V, ID = –4 A
Turn-off time t off — 110 — ns
Note: 1. Pulse test

3
2SJ160, 2SJ161, 2SJ162

Power vs. Temperature Derating Maximum Safe Operation Area

150 –20
Ta = 25°C
–10
Channel Dissipation Pch (W)

ID max (Continuous)
PW

Drain Current ID (A)

PW
(–14.3 V,

DC
–5 –7 A) =

=
100 10

Op

10
0

ms
m

ra
s(

tio

(1
1

n
–2

Sh
Sh

(T C

ot)
ot

=
)

25
°C
50 –1.0

)
(–120 V, –0.83 A) (–140 V, –0.71 A)
(–160 V, –0.63 A)
–0.5
2SJ160
2SJ161
2SJ162
–0.2
0 50 100 150 –5 –10 –20 –50 –100 –200 –500
Case Temperature TC (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

–10 –1.0
TC = 25°C
VDS = –10 V

°C
–9

25
–8 –0.8

25
=–
–8
Drain Current ID (A)

Drain Current ID (A)

75
C
–7

T
–6 –0.6
–6
–5
–4 –4 –0.4
Pch
= 10
–3 0W
–2 –2 –0.2
–1 V
VGS = 0

0 –10 –20 –30 –40 –50 0 –0.4 –0.8 –1.2 –1.6 –2.0
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

4
 2SJ160, 2SJ161, 2SJ162
Drain to Source Saturation Voltage Drain to Source Voltage vs.
Drain to Source Saturation Voltage VDS (sat) (V)

vs. Drain Current Gate to Source Voltage

–10 –10
75
VGD = 0
Drain to Source Voltage VDS (V)

–5 25 °C
25
=– –8
TC
–2
–6 –5
–1.0
–4
–0.5
–2 –2
–0.2
ID = –1 A
–0.1 0
–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –2 –4 –6 –8 –10
Drain Current ID (A) Gate to Source Voltage VGS (V)
Input Capacitance vs. Forward Transfer Admittance
Gate to Source Voltage vs. Frequency
1,000 3.0
Forward Transfer Admittance yfs (S)
Input Capacitance Ciss (pF)

1.0
500
0.3
0.1
0.03
200
VDS = –10 V 0.01 TC = 25°C
f = 1 MHz VDS = –10 V
ID = –2 A
100 0.003
0 2 4 6 8 10 10 k 30 k 100 k 300 k 1 M 3M 10 M
Gate to Source Voltage VGS (V) Frequency f (Hz)
5
2SJ160, 2SJ161, 2SJ162
Switching Time vs. Drain Current
500

Switching Time ton, toff (ns)

200 ton

100

50 toff

20

10

5
–0.1 –0.2 –0.5 –1.0 –2 –5 –10
Drain Current ID (A)

Switching Time Test Circuit

Waveforms
Output
10%
RL

Input Input
90%

ton toff
–20 V
PW = 50 µs 90%
duty ratio 50 Ω
= 1% Output
10%

6
 Unit: mm

5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2
φ3.2 ± 0.2 1.5

1.0
0.5

19.9 ± 0.2
14.9 ± 0.2

0.3
2.0
1.6

1.4 Max 2.0

2.8
18.0 ± 0.5

1.0 ± 0.2 0.6 ± 0.2

3.6 0.9
1.0

5.45 ± 0.5 5.45 ± 0.5

Hitachi Code TO-3P
JEDEC —
EIAJ Conforms
Weight (reference value) 5.0 g
Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic components Group 16 Collyer Quay #20-00 Group III (Electronic Components)
179 East Tasman Drive, Dornacher Stra§e 3 Hitachi Tower 7/F., North Tower, World Finance Centre,
San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 Harbour City, Canton Road, Tsim Sha Tsui,
Tel: <1> (408) 433-1990 Germany Tel: 535-2100 Kowloon, Hong Kong
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax: 535-1533 Tel: <852> (2) 735 9218
Fax: <49> (89) 9 29 30 00 Fax: <852> (2) 730 0281
Hitachi Europe Ltd. Hitachi Asia Ltd. Telex: 40815 HITEC HX
Electronic Components Group. Taipei Branch Office
Whitebrook Park 3F, Hung Kuo Building. No.167,
Lower Cookham Road Tun-Hwa North Road, Taipei (105)
Maidenhead Tel: <886> (2) 2718-3666
Berkshire SL6 8YA, United Kingdom Fax: <886> (2) 2718-8180
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.