FS5AS-10A

High-Speed Switching Use

Nch Power MOS FET
REJ03G0246-0100
Preliminary
Rev.1.00
Aug.20.2004

Features
• Drive voltage : 10 V
• VDSS : 500 V
• rDS(ON) (max) : 1.5 Ω
• ID : 5 A

Outline

MP-3A
2, 4

4
1. Gate
2. Drain
3. Source
1
12
4. Drain
3

Applications
SMPS, Lamp Ballast, etc.

Maximum Ratings
(Tc = 25°C)
Parameter Symbol Ratings Unit Conditions
Drain-source voltage VDSS 500 V VGS = 0 V
Gate-source voltage VGSS ±30 V VDS = 0 V
Drain current ID 5 A
Drain current (Pulsed) IDM 15 A
Avalanche current (Pulsed) IDA 5 A L = 200 µH
Maximum power dissipation PD 65 W
Channel temperature Tch – 55 to +150 °C
Storage temperature Tstg – 55 to +150 °C
Mass — 0.32 g Typical value

Rev.1.00, Aug.20.2004, page 1 of 6

FS5AS-10A

Electrical Characteristics
(Tch = 25°C)
Parameter Symbol Min. Typ. Max. Unit Test conditions
Drain-source breakdown voltage V(BR)DSS 500 — — V ID = 1 mA, VGS = 0 V
Gate-source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0 V
Gate-source leakage current IGSS — — ±10 µA VGS = ±25 V, VDS = 0 V
Drain-source leakage current IDSS — — 1 mA VDS = 500 V, VGS = 0 V
Gate-source threshold voltage VGS(th) 2.5 3.0 3.5 V ID = 1 mA, VDS = 10 V
Drain-source on-state resistance rDS(ON) — 1.2 1.5 Ω ID = 2 A, VGS = 10 V
Drain-source on-state voltage VDS(ON) — 2.4 3.0 V ID = 2 A, VGS = 10 V
Forward transfer admittance | yfs | 2.7 4.5 — S ID = 2 A, VDS = 10 V
Input capacitance Ciss — 700 — pF VDS = 25 V, VGS = 10 V,
Output capacitance Coss — 70 — pF f = 1MHz
Reverse transfer capacitance Crss — 15 — pF
Turn-on delay time td(on) — 15 — ns VDD = 200 V, ID = 2 A,
Rise time tr — 20 — ns VGS = 10 V,
Turn-off delay time td(off) — 90 — ns RGEN = RGS = 50 Ω
Fall time tf — 30 — ns
Source-drain voltage VSD — 1.5 2.0 V IS = 2 A, VGS = 0 V
Thermal resistance Rth(ch-c) — — 1.92 °C/W Channel to case

Rev.1.00, Aug.20.2004, page 2 of 6

FS5AS-10A

Performance Curves

Drain Power Dissipation Derating Curve Maximum Safe Operating Area

70 102
7
Drain Power Dissipation PD (W)

5
60
3

Drain Current ID (A)

2
50 tw = 10µs
101
40 7
5
3
30 2
100µs
100
20 7
5
1ms
10 3 Tc = 25°C
2 Single Pulse
DC
0 10–1 0
0 50 100 150 200 10 2 3 5 710 2 3 5 710 2 3 5 7103
1 2

Case Temperature Tc (°C) Drain-Source Voltage VDS (V)

Output Characteristics (Typical) Output Characteristics (Typical)

10 5
VGS = 20V VGS = 20V
Tc = 25°C 5V
Pulse Test 10V 10V
8 6V 4 Tc = 25°C
Drain Current ID (A)

Drain Current ID (A)

6V Pulse Test

6 PD = 65W 3
5V
4 2

2 1
4V
4V
0 0
0 4 8 12 16 20 0 2 4 6 8 10

Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

On-State Voltage vs. On-State Resistance vs.

Gate-Source Voltage (Typical) Drain Current (Typical)
Drain-Source On-State Voltage VDS(ON) (V)

Drain-Source On-State Resistance rDS(ON) (Ω)

20 4.0
Tc = 25°C Tc = 25°C
Pulse Test Pulse Test
16 3.2
ID = 8A
12 2.4
VGS = 10V
8 1.6
5A 20V
3A
4 0.8

0 0
0 4 8 12 16 20 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

Gate-Source Voltage VGS (V) Drain Current ID (A)

Rev.1.00, Aug.20.2004, page 3 of 6

FS5AS-10A

Forward Transfer Admittance vs.

Transfer Characteristics (Typical) Drain Current (Typical)

Forward Transfer Admittance | yfs | (S)

10 102
Tc = 25°C 7 VDS = 10V
VDS = 10V 5
4 Pulse Test
Pulse Test 3
8
Drain Current ID (A)

2
101
6 7
5
4
3
2
4
100 Tc = 125°C
7
5 75°C
2 4 25°C
3
2
0 10–1 –1
0 4 8 12 16 20 10 2 3 4 5 7 100 2 3 4 5 7 101

Gate-Source Voltage VGS (V) Drain Current ID (A)

Capacitance vs.
Drain-Source Voltage (Typical) Switching Characteristics (Typical)
2 5
4 Tch = 25°C
103 Ciss 3 VDD = 200V
7
5 2 VGS = 10V
Switching Time (ns)

RGEN = RGS = 50Ω

Capacitance (pF)

3
2 102 td(off)
102 7
7 5
5 Coss 4 tf
3 3
2 tr
Crss 2
101
7 Tch = 25°C td(on)
5 f = 1MHz 101
3 VGS = 0V 7
2 5
2 3 5 7 100 2 3 5 7101 2 3 5 7 102 2 3 10–1 2 3 4 5 7 100 2 3 4 5 7 101

Drain-Source Voltage VDS (V) Drain Current ID (A)

Gate-Source Voltage vs. Source-Drain Diode Forward

Gate Charge (Typical) Characteristics (Typical)
20 10
Tch = 25°C VGS = 0V
Gate-Source Voltage VGS (V)

ID = 5A Pulse Test
16 8
Source Current IS (A)

Tc = 125°C
VDS = 100V
75°C
12 6
25°C
200V
8 4
400V

4 2

0 0
0 8 16 24 32 40 0 0.8 1.6 2.4 3.2 4.0

Gate Charge Qg (nC) Source-Drain Voltage VSD (V)

Rev.1.00, Aug.20.2004, page 4 of 6

FS5AS-10A

On-State Resistance vs. Threshold Voltage vs.

rDS(ON) (25°C) Channel Temperature (Typical) Channel Temperature (Typical)

Gate-Source Threshold Voltage VGS(th) (V)

rDS(ON) (t°C)

101 5.0
7 VGS = 10V VDS = 10V
ID = 2A ID = 1mA
5
4 Pulse Test 4.0
3
Drain-Source On-State Resistance
Drain-Source On-State Resistance

2
3.0
100
7 2.0
5
4
3
1.0
2

10–1 0
–50 0 50 100 150 –50 0 50 100 150

Channel Temperature Tch (°C) Channel Temperature Tch (°C)

Breakdown Voltage vs.

Drain-Source Breakdown Voltage V(BR)DSS (25°C)

Channel Temperature (Typical) Transient Thermal Impedance Characteristics

Transient Thermal Impedance Zth(ch-c) (°C/W)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)

1.4 101
VGS = 0V 7
ID = 1mA
5
1.2
3
D = 1.0
2
1.0
0.5
100
0.8 7 0.2
PDM
5
0.1
tw
3 0.05
0.6 T
2 0.02
0.01 D = tw
T
Single Pulse
0.4 10–1
–50 0 50 100 150 10–4 2 3 57 10–3 2 3 57 10–2 2 3 57 10-1 2 3 57 100 2 3 57101

Channel Temperature Tch (°C) Pulse Width tw (s)

Switching Time Measurement Circuit Switching Waveform

Vin Monitor Vout 90%

Monitor
D.U.T.
RGEN Vin 10%
RL

Vout 10% 10%

VDD
RGS
90% 90%

td(on) tr td(off) tf

Rev.1.00, Aug.20.2004, page 5 of 6

FS5AS-10A

Package Dimensions

MP-3A
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
  0.32 Cu alloy

6.6 2.3

1 ± 0.2
5.3 ± 0.2 0.5 ± 0.1

10.4 max
6.1 ± 0.2

0.1 ± 0.1
2.5 min

1.4 ± 0.2
1 max

0.76 ± 0.2 0.76

0.5 ± 0.2
2.3±0.2

Dimension in Millimeters
Symbol
Min Typ Max
2.3

A
1

A1
A2
b
D
E
e
Note 1) The dimensional figures indicate representative values unless x
otherwise the tolerance is specified. y
y1
ZD
ZE

Order Code
Standard order
Lead form Standard packing Quantity Standard order code
code example
Surface-mounted type Taping 3000 Type name – T +Direction (1 or 2) +3 FS5AS-10A-T13
Surface-mounted type Plastic Magazine (Tube) 75 Type name FS5AS-10A
Note : Please confirm the specification about the shipping in detail.

Rev.1.00, Aug.20.2004, page 6 of 6

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