HiPerFASTTM IGBTs IXGN60N60C2 VCES = 600V

with Diode IXGN60N60C2D1 IC110 = 60A

VCE(sat) ≤ 2.5V
trr = 35ns
C2-Class High Speed IGBTs

E E SOT-227B, miniBLOC
E153432
60C2 60C2D1
Ec
Symbol Test Conditions Maximum Ratings G
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1 MΩ 600 V

VGES Continuous ±20 V Ec

C
VGEM Transient ±30 V
IC25 TC = 25°C (Limited by Leads) 75 A G = Gate, C = Collector, E = Emitter
IC110 TC = 110°C 60 A c Either Emitter Terminal can be used as
Main or Kelvin Emitter
ICM TC = 25°C, 1 ms 300 A

SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A Features

(RBSOA) Clamped Inductive Load @ VCE ≤ 600 V
z
International Standard Package
PC TC = 25°C 480 W miniBLOC
z
Aluminium Nitride Isolation
TJ -55 ... +150 °C
- High Power Dissipation
TJM 150 °C z
Anti-Parallel Ultra Fast Diode
Tstg -55 ... +150 °C z
Isolation Voltage 3000 V~
z
Low VCE(sat) for Minimum On-State
VISOL 50/60 Hz t = 1 min 2500 V~
Conduction Losses
IISOL ≤ 1 mA t=1s 3000 V~ z
MOS Gate Turn-on
Md Mounting Torque 1.5/13 Nm/lb.in. - Drive Simplicity
Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in. z
Low Collector-to-Case Capacitance
(< 50 pF)
Weight 30 g z
Low Package Inductance (< 5 nH)
- Easy to Drive and to Protect

Applications

z
AC Motor Speed Control
Symbol Test Conditions Characteristic Values z
DC Servo and Robot Drives
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. z
DC Choppers
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
z
Uninterruptible Power Supplies (UPS)
z
Switch-Mode and Resonant-Mode
ICES VCE = VCES 650 μA Power Supplies
VGE = 0V TJ = 125°C 5 mA
IGES VCE = 0V, VGE = ±20V ±100 nA Advantages
VCE(sat)
z
Easy to Mount with 2 Screws
IC = 50A, VGE = 15V, Note 1 2.1 2.5 V z
Space Savings
TJ = 125°C 1.8 V z
High Power Density

© 2009 IXYS CORPORATION, All Rights Reserved DS99177A(01/09)

 IXGN60N60C2
IXGN60N60C2D1
Symbol Test Conditions Characteristic Values
SOT-227B miniBLOC
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 50A, VCE = 10V, Note 1 40 58 S
Cies 4750 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 530 pF
Cres 65 pF
Qg 146 nC
Qge IC = 50A, VGE = 15V, VCE = 0.5 • VCES 28 nC
Qgc 50 nC
td(on) 18 ns
tri Inductive load, TJ = 25°C 25 ns
td(off) IC = 50A, VGE = 15 V 95 150 ns
tfi VCE = 400V, RG = 2Ω 35 ns
Eoff 0.48 0.80 mJ
td(on) 18 ns
tri 25 ns
Inductive load, TJ = 125°C
Eon 0.90 mJ
IC = 50A, VGE = 15V
td(off) 130 ns
VCE = 400V, RG = 2Ω
tfi 80 ns
Eoff 1.20 mJ
RthJC 0.26 °C/W
RthCS 0.05 °C/W

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Oherwise Specified) Min. Typ. Max.

VF IF = 60A, VGE = 0V, Note 1 2.1 V

TJ = 150°C 1.4 V

IRM IF = 60A, -di/dt = 100A/μs, TJ = 100°C 8.3 A

VR = 100V, VGE = 0V,
trr IF = 1A, -di/dt = 200A/μs, VR = 30V,VGE = 0V 35 ns

RthJC 0.85 °C/W

Note 1: PulseTest, t ≤ 300μs, Duty Cycle, d ≤ 2%.

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXGN60N60C2
IXGN60N60C2D1
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25 Deg. C @ 25 deg. C
100 200
VG E = 15V 9V VG E = 15V
90 13V
13V 175
80 11V 11V 9V
150
70
7V
I C - Amperes

I C - Amperes
60 125

50 100

40 7V
75
30
50
20
5V 25
10 5V
0 0
0.5 1 1.5 2 2.5 3 3.5 1 1.5 2 2.5 3 3.5 4 4.5
V CE - Volts V CE - Volts

Fig. 3. Output Characteristics

Fig. 4. T emperature Dependence of V CE(sat)
@ 125 Deg. C
100 1.2
VG E = 15V 9V
90
13V 1.1
80 11V
VC E (sat) - Normalized

VG E = 15V I C = 100A
70 7V 1
I C - Amperes

60
0.9
50
I C = 50A
0.8
40

30 5V 0.7
I C = 25A
20
0.6
10

0 0.5
0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150
V CE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

Fig. 6. Input Admittance
vs. Gate-to-Emitter voltage
5 200
T J = 25º C
4.5 175

4 150
I C - Amperes

3.5 125
VCE - Volts

3 100

2.5 75
I C = 100A
T J = 125º C
2 50
50A 25º C
1.5 25A 25 -40º C

1 0
5 6 7 8 9 10 11 12 13 14 15 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
V GE - Volts V GE - Volts

© 2009 IXYS CORPORATION, All Rights Reserved

 IXGN60N60C2
IXGN60N60C2D1

Fig. 7. T ransconductance Fig. 8. Dependence of Eoff on RG

100 6
90 TJ = 125º C
T J = -40º C VGE = 15V I C = 100A
5
80 VCE = 400V
25º C
70

Eoff - milliJoules
125º C
g f s - Siemens

4
60
I C = 75A
50 3
40
2 I C = 50A
30
20 I C = 25A
1
10
0 0
0 25 50 75 100 125 150 175 200 2 4 6 8 10 12 14 16
I C - Amperes R G - Ohms

Fig. 9. Dependence of Eoff on I C Fig. 10. Dependence of Eoff on T emperature

5 5
R G = 2 Ohms R G = 2 Ohms
R G = 10 Ohms - - - - - I C = 100A
R G= 10 Ohms - - - - -
4 VG E = 15V 4
VG E = 15V
Eoff - MilliJoules

VC E = 400V VC E = 400V
Eoff - milliJoules

T J = 125 ºC
3 3
I C = 75A

2 2
I C = 50A
T J = 25 ºC
1 1

I C = 25A
0 0
20 30 40 50 60 70 80 90 100 25 50 75 100 125
I C - Amperes TJ - Degrees Centigrade

Fig. 11. Gate Charge Fig. 12. Capacitance

Fig. 12. Capacitance
15 10,000
10000
f = 1M Hz
VC E = 300V
I C = 50A Cies
12
- PicoFarads

I G = 10mA C ies
- pF

1,000
1000
Capacitance
VG E - Volts

9
Coes C oes
Capacitance

6
100
100

C res
3 Cres

f = 1 MHz

0 10
10
0 20 40 60 80 100 120 140 160 00 55 10
10 15
15 20
20 25
25 30
30 35
35 4040
Q G - nanoCoulombs V - Volts
V CE- Volts
CE

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXYS REF: G_60N60C2(7Y)12-11-08-A

 IXGN60N60C2
IXGN60N60C2D1
160 4000 80
A TVJ= 100°C TVJ= 100°C
140 nC A VR = 300V
VR = 300V

120 3000 60 IF= 120A, 60A, 30A

IF
Qr IRM
100
TVJ= 150°C
80 100°C 2000 IF= 120A, 60A, 30A 40
25°C
60

40 1000 20

20

0 0 0
0 1 2 V 100 A/μs 1000 0 200 400 600 A/μs800 1000
VF -diF/dt -diF/dt

Fig. 13. Forward Current IF Versus VF Fig. 14. Reverse Recorvery Charge Qr Fig. 15. Peak Reverse Current IRM
Versus -diF/dt Versus -diF/dt

2.0 140 20 1.6

TVJ= 100°C TVJ= 100°C
ns
VR = 300V V IF = 60A μs
130 V FR tfr
1.5 trr 15 trr 1.2
Kf 120 VFR

IF= 30A, 60A, 120A

1.0 110 10 0.8
IRM

100
0.5 5 0.4
QRM
90

0.0 80 0 0.0
0 40 80 120 °C 160 0 200 400 600 800
A/μs 1000 0 200 400 600 A/μs800 1000
T VJ -diF/dt diF/dt

Fig. 16. Dynamic Paraments Qr, IRM Fig. 17. Recorvery Time trr Versus Fig. 18. Peak Forward Voltage VRM
Versus TvJ -diF/dt and trr Versus -diF/dt

1
1.000

K/W

0.1
Z thJC
0.100
Z(th)JC [ ºC / W ]

0.01

0.001
0.010

DSEP 2x61-06A
0.0001
0.00001 0.0001 0.001 0.01 0.1 s 1
0.001 t
0.0001 0.001 0.01 0.1 1 10
Fig. 27. Maximum Transient Thermal Impeadance Juection to Case
Pulse Width [(for
s ] Diode)
Fig. 27. Maximum Transient Thermal Impedance (for diode)

© 2009 IXYS CORPORATION, All Rights Reserved