STB10N60M2, STD10N60M2,

STP10N60M2, STU10N60M2
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg
Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages
Datasheet − production data

Features
TAB
TAB

RDS(on)
3 Order codes VDS @ TJmax ID
1 max
3
1 DPAK STB10N60M2
2
D PAK STD10N60M2
650 V 0.600 Ω 7.5 A
STP10N60M2
TAB
TAB
STU10N60M2

2
3 • Extremely low gate charge
1
3 • Lower RDS(on) x area vs previous generation
2 IPAK
1
• Low gate input resistance
TO-220
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB Applications
• Switching applications

Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
AM15572v1 most demanding high efficiency converters.

Table 1. Device summary

Order codes Marking Package Packaging

STB10N60M2 D2PAK
Tape and reel
STD10N60M2 DPAK
10N60M2
STP10N60M2 TO-220
Tube
STU10N60M2 IPAK

December 2013 DocID024710 Rev 2 1/24

This is information on a product in full production. www.st.com 24
Contents STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ± 25 V

ID Drain current (continuous) at TC = 25 °C 7.5 A
ID Drain current (continuous) at TC = 100 °C 4.9 A
IDM (1) Drain current (pulsed) 30 A
PTOT Total dissipation at TC = 25 °C 85 W
dv/dt (1)
Peak diode recovery voltage slope 15
V/ns
(2)
dv/dt MOSFET dv/dt ruggedness 50
Tstg Storage temperature
- 55 to 150 °C
Tj Max. operating junction temperature
1. ISD ≤ 7.5 A, di/dt ≤ 400 A/μs; V DS peak < V(BR)DSS, VDD=400 V
2. VDS ≤ 480 V

Table 3. Thermal data

Value
Symbol Parameter Unit
D2PAK DPAK TO-220 IPAK

Rthj-case Thermal resistance junction-case max 1.47 °C/W

Rthj-pcb Thermal resistance junction-pcb max(1) 30 50 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 100 °C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not repetitive

IAR 2.5 A
(pulse width limited by Tjmax )
Single pulse avalanche energy (starting
EAS 110 mJ
Tj=25°C, ID= IAR; VDD=50)

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Electrical characteristics STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 600 V
breakdown voltage
Zero gate voltage VDS = 600 V 1 μA
IDSS
drain current (VGS = 0) VDS = 600 V, TC=125 °C 100 μA
Gate-body leakage
IGSS VGS = ± 25 V ±10 μA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2 3 4 V
Static drain-source
RDS(on) VGS = 10 V, ID = 3 A 0.550 0.600 Ω
on-resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 400 - pF

Coss Output capacitance VDS = 100 V, f = 1 MHz, - 22 - pF
VGS = 0
Crss Reverse transfer
- 0.84 - pF
capacitance
Equivalent output
Coss eq.(1) VDS = 0 to 480 V, VGS = 0 - 83 - pF
capacitance
Intrinsic gate
RG f = 1 MHz open drain - 6.4 - Ω
resistance
Qg Total gate charge VDD = 480 V, ID = 7.5 A, - 13.5 - nC
Qgs Gate-source charge VGS = 10 V - 2.1 - nC
Qgd Gate-drain charge (see Figure 17) - 7.2 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 8.8 - ns

VDD = 300 V, ID = 3.75 A,
tr Rise time RG = 4.7 Ω, VGS = 10 V - 8 - ns
td(off) Turn-off delay time (see Figure 16 and - 32.5 - ns
Figure 21)
tf Fall time - 13.2 - ns

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 7.5 A

ISDM (1)
Source-drain current (pulsed) - 30 A
VSD (2)
Forward on voltage ISD = 7.5 A, VGS = 0 - 1.6 V
trr Reverse recovery time - 270 ns
ISD = 7.5 A, di/dt = 100 A/μs
Qrr Reverse recovery charge - 2 μC
VDD = 60 V (see Figure 18)
IRRM Reverse recovery current - 14.4 A
trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/μs - 376 ns
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 2.8 μC
IRRM Reverse recovery current (see Figure 18) - 15 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

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Electrical characteristics STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for DPAK and Figure 3. Thermal impedance for DPAK and
IPAK IPAK
AM15833v1
ID
(A)

10µs
10 s
ai
re n)
si a DS(o
th R 100µs
in ax
n
it o y m
a b
1 er ed
Op mit 1ms
L i

10ms
Tj=150°C
0.1
Tc=25°C
Single
pulse
0.01
0.1 1 10 100 VDS(V)

Figure 4. Safe operating area for D2PAK and Figure 5. Thermal impedance for D2PAK and
TO-220 TO-220
AM15834v1
ID
(A)

10 s
ai 10µs
re n)
si a DS(o
th R 100µs
in ax
n
it o y m
a b
1 er ed 1ms
Op mit
L i
10ms
Tj=150°C
0.1
Tc=25°C
Single
pulse
0.01
0.1 1 10 100 VDS(V)

Figure 6. Output characteristics Figure 7. Transfer characteristics

AM15823v1 AM15824v1
ID ID (A)
(A) VGS=7, 8, 9, 10V VDS=18V
14 14
6V
12 12

10 10

8 8

6 6
5V
4 4

2 2
4V
0 0
0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

AM15825v1
VGS VDS RDS(on) AM15826v1

(V) (V) (Ω)

12 VDS VDD=480V VGS=10V
ID=7.5A 500 0.58

10
400 0.57
8
300 0.56
6
200 0.55
4

100 0.54
2

0 0 0.53
0 2 4 6 8 10 12 Qg(nC) 1 2 3 4 5 6 7 ID(A)

Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage
vs. temperature
AM15827v1 AM15828v1
C VGS(th)
(pF) (norm)

ID=250 µA
1000 1.1
Ciss

100 1.0

Coss
10 0.9

1 Crss 0.8

0.1 0.7
0.1 1 10 100 VDS(V) -50 -25 0 25 50 75 100 125 TJ(°C)

Figure 12. Normalized on-resistance vs Figure 13. Source-drain diode forward

temperature characteristics
AM15829v1 AM15830v1
RDS(on) VSD (V)
(norm)
2.5 ID=3 A 1.4
2.3
2.1 1.2
TJ=-50°C
1.9 1
1.7
0.8
1.5
1.3 0.6 TJ=25°C
TJ=150°C
1.1 0.4
0.9
0.2
0.7
0.5 0
-50 -25 0 25 50 75 100 125 TJ(°C) 0 1 2 3 4 5 6 7 ISD(A)

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Electrical characteristics STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Figure 14. Normalized VDS vs temperature Figure 15. Output capacitance stored energy
AM15831v1 AM15832v1
VDS Eoss(µJ)
(norm)
1.11 ID=1mA
1.09
3
1.07
1.05
1.03 2

1.01
0.99
1
0.97
0.95
0.93 0
-50 -25 0 25 50 75 100 125 TJ(°C) 0 100 200 300 400 500 600 VDS(V)

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Test circuits

3 Test circuits

Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
9%5'66 ton toff
tr tdoff tf
9' tdon

90% 90%
,'0
10%
,' 10% VDS
0

9'' 9'' 90%

VGS

$0Y 0 10% AM01473v1

DocID024710 Rev 2 9/24

Package mechanical data STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Package mechanical data

Table 9. D²PAK (TO-263) mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e 2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.4
V2 0° 8°

DocID024710 Rev 2 11/24

Package mechanical data STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Figure 22. D²PAK (TO-263) drawing

0079457_T

Figure 23. D²PAK footprint(a)

16.90

12.20 5.08

1.60

3.50
9.75
Footprint

a. All dimension are in millimeters

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Package mechanical data

Table 10. DPAK (TO-252) type A mechanical data

mm
Dim.
Min. Typ. Max.

A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e 2.28
e1 4.40 4.60
H 9.35 10.10
L 1.00 1.50
(L1) 2.80
L2 0.80
L4 0.60 1.00
R 0.20
V2 0° 8°

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Package mechanical data STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Figure 24. DPAK (TO-252) type A drawing

0068772_M_type_A

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Package mechanical data

Figure 25. DPAK (TO-252) type A footprint (b)

Footprint_REV_M_type_A

b. All dimensions are in millimeters

DocID024710 Rev 2 15/24

Package mechanical data STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Table 11. TO-220 type A mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Package mechanical data

Figure 26. TO-220 type A drawing

BW\SH$B5HYB7

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Package mechanical data STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Table 12. IPAK (TO-251) mechanical data

mm.
DIM
min. typ. max.

A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
B5 0.30
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
L1 0.80 1.20
L2 0.80 1.00
V1 10°

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Package mechanical data

Figure 27. IPAK (TO-251) drawing

0068771_K

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Packaging mechanical data STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

5 Packaging mechanical data

Table 13. D²PAK (TO-263) tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R 50
T 0.25 0.35
W 23.7 24.3

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Packaging mechanical data

Table 14. DPAK (TO-252) tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3

DocID024710 Rev 2 21/24

Packaging mechanical data STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

Figure 28. Tape for D2PAK (TO-263) and DPAK (TO-252)

10 pitches cumulative
tolerance on tape +/- 0.2 mm

Top cover P0 D P2
T tape
E

F
K0 W
B1 B0

For machine ref. only A0 P1 D1

including draft and
radii concentric around B0
User direction of feed

Bending radius
User direction of feed

AM08852v1

Figure 29. Reel or D2PAK (TO-263) and DPAK (TO-252)

T
REEL DIMENSIONS

40mm min.

Access hole

At slot location

A N

Full radius Tape slot G measured at hub

in core for
tape start 25 mm min.
width

AM08851v2

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STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 Revision history

6 Revision history

Table 15. Document revision history

Date Revision Changes

29-May-2013 1 First release.

– Added: D2PAK package
– Modified: title and RDS(on) values in cover page
– Modified: RDS(on) values in Table 5
– Modified: RG value in Table 6
06-Dec-2013 2
– Modified: Figure 9 and ID value in Figure 12
– Added: Table 9, 13, Figure 22 and 23
– Updated: Table 10, 11, Figure 24, 25 and 26
– Minor text changes

DocID024710 Rev 2 23/24

 STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2

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24/24 DocID024710 Rev 2