ST 13007

NPN Silicon Transistor

for high voltage, high-speed power switching application

TO-220 Plastic Package

Absolute Maximum Ratings (Ta = 25 OC)
Parameter Symbol Value Unit

Collector Base Voltage VCBO 700 V

Collector Emitter Voltage VCEO 400 V
Emitter Base Voltage VEBO 9 V
Collector Current IC 8 A
Total Power Dissipation (Ta = 25 OC) Ptot 2 W
Total Power Dissipation (TC = 25 OC) Ptot 80 W
Junction Temperature TJ 150 O
C
Storage Temperature Range TS - 55 to + 150 O
C

Characteristics at Ta = 25 OC
Parameter Symbol Min. Typ. Max. Unit
DC Current Gain
hFE 10 - 70 -
at VCE = 5 V, IC = 2 A
Collector Cutoff Current
ICBO - - 100 µA
at VCB = 700 V
Emitter Cutoff Current
IEBO - - 100 µA
at VEB = 9 V
Collector Base Breakdown Voltage
V(BR)CBO 700 - - V
at IC = 100 µA
Collector Emitter Breakdown Voltage
V(BR)CEO 400 - - V
at IC = 10 mA
Emitter Base Breakdown Voltage
V(BR)EBO 9 - - V
at IE = 1 mA
Collector Emitter Saturation Voltage
VCE(sat) - - 2 V
at IC = 5 A, IB = 1 A
Base Emitter Saturation Voltage
VBE(sat) - - 1.6 V
at IC = 5 A, IB = 1 A
Current Gain Bandwidth Product
fT 4 - - MHz
at VCE = 10 V, IC = 0.5 A
Collector Base Capacitance Ccb - 110 - pF
at VCB = 10 V, f = 0.1 MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/04/2007
ST 13007

TO-220 PACKAGE OUTLINE

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/04/2007