Seminar, USTH - Vietnam France University

Hanoi, Vietnam
Thursday 18 April 2019

Infiltration Synthesis on Directed Self-Assembled Block

Copolymers for Patterned Media Fabrication: Opportunities and
Challenges on the Path to Scalable Nanomanufacturing
Yves-Andre Chapuis
Professor Researcher/Group Leader, Semiconductor Nanomanufacturing & Energy
University of Strasbourg, France

Abstract
Context:
Some materials as block copolymers have the unique ability to self-assemble into organized molecular
patterns and structures. Using these self-assembling materials, scientists direct the formation of such
patterns and structures at the nanoscale. The ultimate goal is to leverage these nanoscale architectures
to control the properties of materials for applications including data storage, semiconductor, energy
conversion and storage, catalysis, and optics.
Presentation:
We discuss the directed self-assembly (DSA) technique that uses self-assembled block copolymers for
being one of the most promising strategy for high-volume cost-effective of semiconductor
manufacturing at the nanoscale. We focus on disk patterned media fabrication for data storage
solutions, as developed in the research center of HGST 1, San Jose, CA, USA. Particularly, we examine an
innovative pattern transfer method that creates inorganic replicas of self-assembled nanostructures
through a process called sequential infiltration synthesis of block copolymers using atomic layer
deposition (ALD). Details of the breakthrough attained in nanopatterning technology with the first world
demonstration of disk areal densities up to 2.0 Tbit/in 2 are reviewed.
Research opportunity:
We debate the opportunity of DSA in nanopatterning of semiconductor today. We also open discussion
about potential of using ALD, molecular layer deposition (MLD) and infiltration technologies for future
applications in storage energy.
1
HGST is a subsidiary of Western Digital Corporation that manufactures and sells hard disk and solid-
state drives