ESc201, Lecture 19:  Bipolar Junction Transistor (Small signal Model)

19:  Bipolar Junction Transistor (Small signal Model)

Current in base- common--emitter current gain F and appears

base-emitter diode is amplified by common
at collector-
collector-base and collector currents are exponentially
p y related to base-
base-emitter voltage.
g
Base--emitter diode is replaced by constant voltage drop model(
Base model(VVBE = 0.7 V) since it is
forward--biased in forward
forward forward--active region.
DC base and emitter voltages differ by 0.70 7 V diode voltage drop in forward-
forward-active region.
region

r
R BB =R1 R 2 RBB
RO→∞
Later use just RB
when slope of IC-VCE→0
instead of RBB .
 ESc201, Lecture 19:  Bipolar Junction Transistor (A.C. small signal Model)
19:  Bipolar Junction Transistor (A.C. small signal Model)
Usingg 2-
2 -p
port y-p
parameter network,
network, the
port variables can represent either time-
time-
varying part of total voltages and
currents or small changes in them away
from Q-
Q-point values.
values
ib  y1 1v b e  y1 2 vc e
ic  y 2 1v b e  y 2 2 vc e
VBE / VT
I E ×e Assume that D.C. F= A.C. o and
IC IE
IB    S Transistor in forward active (CE reverse biased).
βF βF  1 βF i  iB
y12  b  0
i  iB IC vce  vCE
y11= b = = v 0 Q  point
v  v BE β o VT b
be
be v =0 Q-point
ce ic  iC
y2 2  
ic βOi v ce  vC E
y2 1  b
v
 y
21  v v
be
0 Q -p o in t

be v 0 be v 0 IC
ce ce = 0
β i I VA + VC E
 O B = C
 v B E Q -p o in t V T With the asumption that VA  ∞ (slope =0)
 ESc201, Lecture 19:  Bipolar Junction Transistor (Small signal Model)
19:  Bipolar Junction Transistor (Small signal Model)
Hybrid--Pi Model of BJT
Hybrid
I
Input
t resistance
it = r (but
(b t there
th could
ld
be capacitance in parallel from the
depletion layer capacitance for high
frequency considerations)
IC
Transconductance= y21=gm =
VT
1 βo VT βo
Input resistance = rπ = = =
y 21 IC gm
1 VA +V
VCE V
A
Therefore Small-
Small-signal
g parameters
p are
Output resistance = ro     (Open) controlled by the QQ--point biasing.
y22 IC IC C r β V C
re = π = o T
Voltage -controlled current source gmvbe can be transformed
into
i t current-
currentt-controlled
t ll d currentt source, as has
h been
b used
d earlier.
li βo 1 (βo 1) IC
 ib  ib
B T Model
ib ie of BJT B ib ie
re
E
vce E αVT VT 1
vbe  ibrπ , gmvbe  gmibrπ =βoib and ic =βoib   βoib re =  
ro ro  IC IC g m
 ESc201, Lecture 19:  Bipolar Junction Transistor (Small signal Model)
19:  Bipolar Junction Transistor (Small signal Model)
When Capacitor coupled output is taken, IC
then
h theh voltage
l offset
ff at Vo does
d not RC
matter, so Vo is chosen to give maximum swing. R1
IB C +
VCC
C→∞
Av = vv c = vv o = -g m R L -
T ran s is to r b be R2 B Vo
E

v  v  v 
A v = v =  v   vb e
o o 

i  be  i 
R L =R C R 3  v 
= -g m R L  vb e 

i   
 
 R B rπ 
 
Av = - gmR L  


R i + R B rπ  
  

Input potential divider

 ESc201, Lecture 19:  Bipolar Junction Transistor (Biasing under different cases)
19:  Bipolar Junction Transistor (Biasing under different cases)
The story of how some students in the
laboratory could not do the Transistor VCC
Amplifier experiment as their Transistor went IC V
into saturation has been related to you in the RC CC/3
class. This was due to variation of  over a wide R1 IB C
range. How can one go around this problem? C →∞
VCC/3
Add a resistor to the emitter (RE). For large 
there
there
would be a larger voltage drop across RC and RE.
B
R2 E
Voltage drop across RC changes VCE but unless the RE
drop is very large it would not take it into saturation. CE VCC/3
All it would do is reduce the dynamic range.
C vo
Whereas V
Wh Voltage
lt d
drop across RE reduces
d VBE, thus
th providing
idi a
feedback to reduce IC and restores the currents closer to the RC RL’
design. BUT THERE CAN BE NO FREE LUNCH  i b=  i e
v o = - ic (R C ||R L ' ))= -αα ie R L v b = ie ( re + R E ) R
βo i B
α1
re = = 
(β 1) g m g m
gm o RB ib ie Rout=RC
vi +
v  v  v 
A v = vo =  v o   vb  = - α i R
e L  b  v 
re IC
 gm =
i  b  i  ie (r e  R E )  v 
 i  Rb E VT
α ie R L ii [R B ||(β + 1)(re  R E )] Rin
- RE
ie (re  R E ) ii { R i  [R B ||(β + 1)(r
 vbe 
1)( e  R E )]} R in =R ||(β+1)( e  R E )
R B ||(β+1)(r 


vb 
( β / (β + 1) ) R L (β + 1)(re  R E ) βR L
 - = - = 1
(re  R E ) { R i  (β + 1)(re  R E )} { R i  (β + 1)(re  R E )} (1  gmR E )
 ESc201, Lecture 19:  Bipolar Junction Transistor (Small signal Model)
19:  Bipolar Junction Transistor (Small signal Model)

Effect of adding RE

1. The voltage gain is now less dependent on .

2. The input resistance is increased by a factor of (1+gmRE).
3. The base to collector voltage gain is reduced by 1/ (1+gmRE)
4. For the same nonlinear distortion the input can be increased by a factor of (1+gmRE)
5. The frequency response in significantly improved.

As a particular example for =100, RL= 4.12k, RE=300, and a CBase

Base--Collector=0.5pF
Without RE the values are :
Amid freq= -153, fH= 1.56 MHz, GBWP =239 MHz.
With RE the values are :
Amid freq= -11.0, fH= 13.9 MHz, GBWP =153 MHz.
And Rin must have increased by approximately a ratio of (153/11)=14 times.