INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD1390

DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Reliability

APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 1500 V

VCES Collector-Emitter Voltage 1500 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current- Continuous 1 A

ICP Collector Current-Pulse 2.5 A

Collector Power Dissipation

PC 40 W
@ TC≤90℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD1390

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A

B 5.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A

B 1.5 V

VCB= 750V; IE= 0 50 μA

ICBO Collector Cutoff Current
VCB= 1500V; IE= 0 1 mA

hFE DC Current Gain IC= 2A; VCE= 5V 2 7

tf Fall Time 1 μs
IC= 2.5A, IBend= 1.1A, LB= 10μH
B

tstg Storage Time 11 μs

isc Website：www.iscsemi.cn 2