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Energy
EnergyProcedia
Procedia119 (2017) 000–000
00 (2017) 980–989
www.elsevier.com/locate/procedia
International Conference on Technologies and Materials for Renewable Energy, Environment and
Sustainability,
International Conference TMREES17,
on Technologies 21-24 April,
and Materials Beirut Lebanon
for Renewable Energy, Environment and
Sustainability, TMREES17, 21-24 April, Beirut Lebanon
Angle-depended Photocurrent Characteristics of Upper-Limit
Angle-depended
Efficient Cascade
The 15th Photocurrent
PV Symposium
International Characteristics
Cells on theDistrict
on BaseHeating of
andUpper-Limit
of Homogeneous
Cooling
Efficient Cascade PVSemiconductor
Cells on the Base of Homogeneous
Assessing the feasibility of using the heat demand-outdoor
Semiconductor
temperature
Yuri D.function for a long-term
Arbuzov, Vladimir district
M. Evdokimov, Olga heat demand forecast
V. Shepovalova*
Yuri D. Arbuzov,
VIESH-RENEWABLE Vladimir
ENERGY M.1-stEvdokimov,
SOURCES, Olga
Veshnyakovsky proezd. V. Shepovalova*
2, Moscow, 109456, Russia
I. Andrića,b,c*, A. Pinaa, P. Ferrãoa, J. Fournierb., B. Lacarrièrec, O. Le Correc
VIESH-RENEWABLE ENERGY SOURCES, 1-st Veshnyakovsky proezd. 2, Moscow, 109456, Russia
a
IN+
Abstract Center for Innovation, Technology and Policy Research - Instituto Superior Técnico, Av. Rovisco Pais 1, 1049-001 Lisbon, Portugal
b
Veolia Recherche & Innovation, 291 Avenue Dreyfous Daniel, 78520 Limay, France
Abstract c
Département Systèmes Énergétiques et Environnement - IMT Atlantique, 4 rue Alfred Kastler, 44300 Nantes, France
Angle-dependent characteristics of spectral photoresponse for both idealized and real upper-limit efficiency cascade PV cells (or
photoelectric converters, PC) have been studied as function of single PCs number in cascade, and their values for silicon PC
Angle-dependent
structures in visible characteristics
radiation rangeof spectral photoresponse
have been evaluated.for both idealized
Characteristic and real
values upper-limit
of radiation efficiency
incidence cascade
angle PV cells (or
corresponding to
photoelectric
twofold converters,
photocurrent PC) have
reduction in been studiedwith
comparison as function
normal of single incidence
radiation PCs number have in been
cascade, and as
defined their
a values for
function of silicon PC
single PC
Abstract
structures
number in in visibleand
cascade radiation range have
photosensitivity beenbase
of the evaluated. Characteristic
PC. Expediency values of equipment
of sun-tracking radiation incidence
application angle corresponding
in photoelectric to
solar
twofold
systems photocurrent
on reduction
the basis of cascade in comparison
PV cells, as with normal
well as that radiation
of tracking incidence have been defined as a function of single PC
Districtin
number heating
cascadenetworks are commonly
and possibility
photosensitivity of addressed
the base PC. literatureofaccuracy
in Expediency
the as improvement,
one of theequipment
sun-tracking
compared
most effective to conventional
solutions
application
PCs has
for decreasing
in photoelectric the
solar
been substantiated
greenhouse gas and
emissions from to use
the different
building cascade
sector. These PV cells with
systems particular
require high tracking system
investments whichhasarebeen specified.
returned through the has
heat
systems on the basis of cascade PV cells, as well as that of tracking accuracy improvement, compared to conventional PCs
sales.substantiated
been Due to theand changed climate
possibility conditions
to use different and building
cascade PV cellsrenovation policies,
with particular heat demand
tracking system hasin been
the future could decrease,
specified.
prolonging the investment return period.
©The © 2017
2017 The Authors.
Thescope
Authors. Published
Published by Elsevier Ltd.
main of this paper isby to Elsevier
assess the Ltd.
feasibility of using the heat demand – outdoor temperature function for heat demand
Peer-review
forecast. under
The responsibility
district of thelocated
Euro-Mediterranean Institute was
for Sustainable
as a Development (EUMISD).
© 2017
Peer-reviewThe under of
Authors. Alvalade,
Published by
responsibility in Lisbon
of Elsevier Ltd. (Portugal),
the Euro-Mediterranean Institute used case Development
for Sustainable study. The district is consisted of 665
(EUMISD).
buildings that vary in both construction period and typology. Three weather scenarios (low, medium, high) and three district
Keywords: Cascade PV Cell; Angle-Dependent Characteristics; Monochromatic Radiation; Incidence Angle; Photoresponse.
Peer-review
renovation underwere
scenarios responsibility
developedof(shallow,
the Euro-Mediterranean
intermediate, deep).Institute
To for Sustainable
estimate Development
the error, obtained (EUMISD).
heat demand values were
comparedCascade
Keywords: with results from
PV Cell; a dynamic heatCharacteristics;
Angle-Dependent demand model, previously developed
Monochromatic and validated
Radiation; Incidence Angle;by the authors.
Photoresponse.
The results showed that when only weather change is considered, the margin of error could be acceptable for some applications
1.(the
Introduction
error in annual demand was lower than 20% for all weather scenarios considered). However, after introducing renovation
1.scenarios,
Introductionthe error value increased up to 59.5% (depending on the weather and renovation scenarios combination considered).
TheConventional
value of slopehomogeneous
coefficient increasedsemiconductor
on averagePV cells
within the or photoelectric
range of 3.8% up converters (PC) comprising
to 8% per decade, that correspondsone top-n
the
junction
decrease [1,
in 2] generate
the number voltages
of heating whoseofvalues
hours 22-139h areduring
determined
the by the
heating height
season of potential
(depending on barrier
the at the of
combination junction.
weather For
and
Conventional homogeneous semiconductor PV cells or photoelectric converters (PC) comprising one p-n
most technologically
renovation common photoelectric materials, i. e.intercept
silicon increased
and galium arsenide, output voltage attains 0.6V
junction [1,scenarios
2] generateconsidered).
voltagesOn the other hand,
whose values arefunction
determined by the heightfor of 7.8-12.7% per decade
potential barrier (depending
at the junction.onForthe
tocoupled
0.9V, scenarios).
for illumination
The valuesintensity closecould
suggested to that
beof solar
used to radiation.
modify the At the same
function time, typical
parameters for the electronic devices need
scenarios considered, and
most technologically common photoelectric materials, i. e. silicon and galium arsenide, output voltage attains 0.6V
improve the accuracy of heat demand estimations.
to 0.9V, for illumination intensity close to that of solar radiation. At the same time, typical electronic devices need
©* Corresponding
2017 The Authors.
author.Published by Elsevier Ltd.
Tel.: +7-906-092-9560.
Peer-review undershepovalovaolga@mail.ru
E-mail address: responsibility of the Scientific Committee of The 15th International Symposium on District Heating and
(O.V. Shepovalova).
* Corresponding author. Tel.: +7-906-092-9560.
Cooling.
E-mail address: shepovalovaolga@mail.ru (O.V. Shepovalova).
1876-6102 © 2017
2015 The Authors. Published by Elsevier Ltd.
Peer-review underdemand;
Keywords: Heat responsibility of the
Forecast; Euro-Mediterranean
Climate change Institute for Sustainable Development (EUMISD).
1876-6102 © 2017
2015 The Authors. Published by Elsevier Ltd.
Peer-review under responsibility of the Euro-Mediterranean Institute for Sustainable Development (EUMISD).

1876-6102 © 2017 The Authors. Published by Elsevier Ltd.

Peer-review under responsibility of the Scientific Committee of The 15th International Symposium on District Heating and Cooling.
1876-6102 © 2017 The Authors. Published by Elsevier Ltd.
Peer-review under responsibility of the Euro-Mediterranean Institute for Sustainable Development (EUMISD).
10.1016/j.egypro.2017.07.131
 Yuri D. Arbuzov et al. / Energy Procedia 119 (2017) 980–989 981
Yu.D. Arbuzov , V.M. Evdokimov, O.V. Shepovalova / Energy Procedia 00 (2017) 000–000 2

much higher supply voltages, for their normal operation, in many cases, tens times as high, as these values. To
provide higher voltages, separate PCs are usually interconnected to form modules. However, this method is
associated with inevitable ohmic and commutation loss of power. Therefore, the problem of development of
efficient PC with output voltage values, at least, several times higher than that of conventional converters is of prime
importance. In works [3, 4] a new type of homogeneous planar PC on the base of n+-p-p+-n+-p-p+-…-n+-p-p+
multi-junction semiconductor structure has been described that, in principle, makes it possible to increase drastically
the values of PC output voltage. At the present time, such structures can be manufactured using technological
methods of liquid-phase of vapor-phase epitaxy by sequential deposition of certain layers upon a base PC. A base
PC can be made using one of conventional technologies to provide mechanical integrity of the entire structure. Since
p+ and n+ layers are heavily doped metal-like transition contacts occur at their interfaces owing to the charge carriers
tunneling through p+-n+ junction. This structure is homogeneous cascade PC comprising a certain number of single
PCs connected in series, each of them illuminated with light that has passed all upflow semiconductor layers.
In this work, the problem of determining incident angle dependent photoresponse characteristics for optimized
structures of idealized cascade PC has been studied in the assumption of neglected bulk and surface charge carrier
recombination in epitaxial layers of the structure, for any incidence angle defined by real operating conditions in
accordance with [5, 6]. The possibility of practical implementation of such conditions is based on the fact that,
a priori, optimal values of layer thickness are small compared to charge carriers’ diffusion lengths in layers while
surface recombination can not be, principally, eliminated with the use of technologies developed so far.

2. Monochromatic radiation

For monochromatic radiation, charge carrier generation function, for a section at depth x from the illuminated
surface has the following form:

( x)  0  ex , (1)

where 0 is density of incoming photon flax,  is optical absorption coefficient depending on wavelength  and
semiconductor properties.
Density of photocurrent Ji generated in i-th single PC (i = 1, 2, …, N), with the account to light absorption
within upflow layers, equals to:

J  i  q  0  S i ( ); i  1, 2 , ..., N , (2)

where q is electron charge, N is number of single PCs in cascade PV cell, Si() is photoresponse of i-th single PC in
cascade corresponding to the share of incident monochromatic radiation converted into photocurrent with the
account of radiation absorption in upflow layers integrated in cascade:

N
  dk
Si ( )  e k  i 1  Qi ( ); i  1, 2, ..., N ; (3)

where dk is thickness of k-th single PC, Qi () is spectral charge carrier collection efficiency for p-n junction of i-th
single PC.
To evaluate the upper-limit value of cascade efficiency in accordance with idealized model, we assume that
charge carrier collection efficiency in i-th single PC with thickness di is equal to the share of radiation absorbed
inside it, i. e.

Qi ( )  1  edi ; i  2, 3, ..., N , (4)

982 Yuri D. Arbuzov et al. / Energy Procedia 119 (2017) 980–989
Yu.D. Arbuzov , V.M. Evdokimov, O.V. Shepovalova / Energy Procedia 00 (2017) 000–000 3

while that in the base PC (the first single PC) Qb() is defined by characteristics of high-efficiency monocrystalline
PC with optimizes structure fabricated with the use of up-to-date semiconductor technologies.
This being the case, condition of photocurrent continuity in series cascade electric circuit can be written as follows:


1  e   d i 1  e   d i 1 1  e   d i ;  i  2 , 3, ..., N  1 , (5)

i
  dk
1 e  di
e k 2
Q b ( ); i  2 , 3 , ..., N . (6)

Solution of these equations yields the following general expression for optimal value of i-th single PC thickness
depending on its number:

1 1  (i  1)  Q b ( )
di  ln ; i  2, 3, ..., N . (7)
 1  (i  2 )  Q b ( )

It follows here from that optimal thickness di decreases proportionally with optical absorption constant , gently
(logarithmically) decreasing with number i, and increases with charge carrier collection efficiency Qb() in the base PC.
Photocurrent in series circuit comprising N single PCs can be found from the following expression:

Q b ( )
J   J  i  q  0 (1  e  d N )  q  0 ; i  1, 2, ..., N . (8)
1  ( N  1)Q b ( )

Obviously, photocurrent dependence on wavelength of monochromatic radiation is defined by charge carrier

collection efficiency dependence behavior in the base PC, for particular wavelength, and it decreases with number N
in cascade. For N Qb() >> 1, photocurrent gradually becomes independent on Qb() attaining value J = q0/N.

3. Theory of angle-dependent photoresponse characteristics for single PCs within cascade and for entire
cascade under monochromatic radiation

For monochromatic radiation incoming onto illuminated surface at an incident angle ξ, absorption is determined
by its path in semiconductor cascade PC at a refraction angle  defined by ratio: sin ξ = n sin, where n is radiation
refractive index for particular semiconductor along coordinate  depending on distance x from the surface in
accordance with relationship  = x/cos (see Fig.1). In this assumption, the flux density of radiation quanta has the
following form:

 ( x,  )   0  cos   e x / cos  ; (9)

cos   1  (sin  ) 2 / n 2 . (10)

while photocurrents through i-th single PC in cascade have the following values:

J  i ( )  q  0  S i ( ,  ); i  1, 2, ..., N , (11)

where photoresponse Si (,ξ) of i-th single PC in cascade can be found from the following general expressions, for
arbitrary values di:
N


cos   dk

S 1 ( ,  )  cos   e k 2
 Q b ( ,  ) ; (12)
 Yuri D. Arbuzov et al. / Energy Procedia 119 (2017) 980–989 983
Yu.D. Arbuzov , V.M. Evdokimov, O.V. Shepovalova / Energy Procedia 00 (2017) 000–000 4

n+
Nth single PC
p +

• • • • • • •
n+
p  3th single PC
p+
n+
p 2th single PC
p +

n+
p substrate base area
1th single PC – base PC
p+

Fig. 1. Structure of the cascade homogeneous photoconverter

N


cos 
  dk 

di
S i ( ,  )  cos   e k  i 1
 (1  e cos 
); i  2 , ..., N  1 ; (13)


 dN
S N ( ,  )  cos   (1  e cos 
). (14)

Generally, charge carrier collection efficiency Qb(,) for p-n junction in the base PC can be represented in form
of integral over coordinates in either b or xb:


dg ( ,  )
Q b ( ,  )   q( xb )   dx b , (15)
0
dx b

where integral is taken around entire base PC thickness, q(xb) is collection efficiency of charge carriers generated in
the plane with coordinate xb depending on semiconductor structure and photoelectric parameters of base PC while
dg(,) is the share of monochromatic radiation falling at angle  and absorbed in infinitely thin layer db in
vicinity of point with coordinate b corresponding to coordinate xb:


dg ( ,  )    e   b d  b   e  xb / cos  dx b . (16)
cos 

It follows here from that dependence Qb(,) of charge carrier collection efficiency in base PC on incident angle
 can be described by substituting value  by /cos in spectral dependence Qb() for radiation normal incidence,
i. e. Qb(,) = Qb(/cos).
For studied angle-depended characteristics of optimized cascade PC, in conditions of normal incidence of monochromatic
radiation, substitution by values of i-th single PC thickness (7) yields the following expression for photoresponse:

cos   Q b ( / cos  ) ; (17)

S1 ( ,  ) 
1  ( N  1)  Qb ( ) 1 / cos 
984 Yuri D. Arbuzov et al. / Energy Procedia 119 (2017) 980–989
Yu.D. Arbuzov , V.M. Evdokimov, O.V. Shepovalova / Energy Procedia 00 (2017) 000–000 5

S i ( ,  ) 

cos  1  (i  1)  Qb ( )   1  (i  2 )  Qb ( ) 
1 / cos  1 / cos 
; i  2, 3, , N . (18)
1  ( N  1)  Qb ( ) 1 / cos 
Thus, photoresponse of i-th single PC in cascade optimized for normal incidence monochromatic radiation can be
represented using an explicit dependence on radiation incidence angle ξ and on refraction angle  defined by
collection efficiency of charge carriers generated by radiation with particular wavelength in the base PC for normal
incidence Qb() and for certain incidence angle Qb(/cos), by number N and numbers i of single PCs in cascade.
In accordance with current flow law in series-connected cascade, photoresponse of entire cascade is defined by
the minimal photoresponse value among all single PCs in cascade.

4. Angle-dependent photoresponse characteristics of idealized cascade PC

For idealized cascade PC that comply with the condition of complete charge carrier collection in base PC,
Qb() = 1, in the entire spectral range of semiconductor fundamental absorption, the obtained photoresponse
dependences of i-th single PC in cascade have upper-limit theoretical values Stheor for any  and, therefore, for any
incident radiation spectrum:

S theor i ( ) 

cos   i 1 / cos   (i  1) 1 / cos  
; i  1, 2, ..., N . (19)
N 1 / cos 

For normal radiation incidence (ξ = 0,  = 0), photoresponse of all single PCs in idealized cascade are identical
and equal to Stheor i (0) = 1/N, in accordance with cascade structure optimization requirements. For ξ  0,
photoresponse Stheor i(ξ) rises with single PC number i. It can be proved by the fact that, for 1/cos > 1, the following
in equation is valid:

1 1
1 1
dS theor i ( ) cos  i cos   ( i  1) cos 
   0; i  1, 2 , ..., N . (20)
di cos  N 1 / cos 

The maximum value of photoresponse is achieved in the lowest (downflow) single PC in cascade (i = N) that
equals to:

 1  (21)
S theor N ( )  cos   1  (1  )1 / cos   .
 N 

The minimum value of photoresponse Stheor 1 (ξ) corresponds to the base PC (i = 1) and defining the upper-limit
photoresponse value Stheor C (ξ) of the entire idealized cascade:

cos  cos  1
S theor C ( )  S theor 1 ( )  1 / cos 
 ; S theor C (0)  . (22)
N N n / n 2
 sin 2
 N

Its dependence on radiation incidence angle ξ in the range from 0° to 90° and n = 3,4 (for silicon), for various
values N (from 1 to 5) in cascade silicon PC is presented in Fig. 2.
This dependence has the shade of slope including maximum in point ξ = 0 corresponding to Stheor C (0) = 1/N,
smoothly decreasing with ξ. Slop sharpness ddecreases with increasing N.
 Yuri D. Arbuzov et al. / Energy Procedia 119 (2017) 980–989 985
Yu.D. Arbuzov , V.M. Evdokimov, O.V. Shepovalova / Energy Procedia 00 (2017) 000–000 6

1
0.9 N=1

0.8
0.7
Photoresponse

0.6
0.5 N=2

0.4
N=3
0.3 N=4
0.2
N=5
0.1
0
0 10 20 30 40 50 60 70 80 90
Radiation incidence angle, degrees

Fig.2. Dependence of upper-limit theoretical photoresponse on radiation incidence angle, for idealized silicon cascade PC.

The basic angle-dependent characteristic of upper-limit theoretical photoresponse of idealized cascade is

determined by dependence of photoresponse relative value on radiation incidence angle (see Fig. 3):

S theor C ( ) cos  , (23)


S theor C ( 0 )  n / n 2  sin 2   1
N  

1
0.9
0.8
Relative photoresponse

0.7 N=5; 4; 3; 2;1 ________

0.6
0.5
0.4
0.3
0.2
0.1
0
0 10 20 30 40 50 60 70 80 90
Radiation incidence angle, degrees

Fig. 3. Dependence of relative upper-limit theoretical photoresponse on radiation incidence angle, for idealized silicon cascade PC.

This dependence can be specified with the help of radiation incidence angle ξ0 corresponding to the half of the
slope height on photoresponse curve described by the following relationship:

cos  0 1
1 / cos  0
 , (24)
N 2 N

resulting in the following explicit connection of ξ0 with N:

986 Yuri D. Arbuzov et al. / Energy Procedia 119 (2017) 980–989
Yu.D. Arbuzov , V.M. Evdokimov, O.V. Shepovalova / Energy Procedia 00 (2017) 000–000 7

cos 0 n 2  sin 2  0
1 cos 0 n  n 2  sin 2  0
N  ( 2 cos  0 )  ( 2 cos  0 ) , (25)

where 0 is refraction angle for ξ = ξ0.

The values of radiation incidence angles ξ0 corresponding to the half of the slope height on photoresponse curve
for silicon cascade PCs (n = 3,4) comprising different N (for N = 1 to 5) are presented in Fig. 4.
Values of ξ0 decrease with N, and for N  2 this dependence tends to be very week. Asymptotic dependence of ξ0
(in degrees of arc) on N has the following form for N >> 1:

180
0  ; N  1;  0  180 /  , (26)
ln N 1
 
ln 4 2

which corresponds to very slow nearing of ξ0 to zero, for N  .

60
59.8
N; ξ0, degrees
Photoresponse peak, degrees

59.6 1; 60
59.4 2; 59,2
3; 58,8
59.2 4; 58,4
5; 58,2
59
58.8
58.6
58.4
58.2
58
1 2 3 4 5
Number of single PC in cascade

Fig.4. Dependence of incidence angle corresponding to the half of the photoresponse curve slope on number of single PCs in idealized cascade PC.

Obtained results show that the upper-limit relative photoresponse of idealized cascade does not depend on
incident radiation spectrum and has a very weak dependence on radiation incidence angle ξ, in the range from 0º to
about 10º, and on number of single PCs in cascade N, for small N values, nearing to that of idealized PC comprising
only one unit (N = 1) under normal-incidence radiation. (At today's level of semiconductor technologies
development, is not practically expedient to manufacture cascades with N more then 5.) This feature of angle-
dependent characteristics of cascades proves the positive perspectives of effective application of various cascade
PCs including high-voltage ones in conditions of low values of radiation incidence angles having no tracking
system.
Moreover, values of ξ0(N) corresponding to the range of acceptable deviation of radiationя from normal
incidence in considered limits of N for various cascades (N  2) are rather close to each other which makes it
possible to use effectively the same optical systems for rather high values of radiation incidence angles in which
case orientation of cascades has to be adjusted.
 Yuri D. Arbuzov et al. / Energy Procedia 119 (2017) 980–989 987
Yu.D. Arbuzov , V.M. Evdokimov, O.V. Shepovalova / Energy Procedia 00 (2017) 000–000 8

5. Angle-dependent photoresponse characteristics of real upper-limit efficiency cascade PC under

monochromatic radiation

Photoresponse characteristics of real cascade PCs are determined through optimization and attainable parameters
of multi-layer photoelectric semiconductor structures on the base of homogeneous materials, first of all, spectral
response of base PC.
Spectral charge carrier collection efficiency in base PC with semiconductor n-p-p+ structure can be written in
form of sum of charge carrier collection efficiency values for doped n-layer having thickness dn, that of base p-layer
dp and that of rear p+-layer dp+ [2, 3]:

Q b (  )  Q n (  ) Q p (  ) Q p  (  ) . (27)

These components can be expressed through general function Q(, d, L, S, D) of optical absorption constant ,
layer thickness d, minor charge carrier diffusion length L, surface recombination rate S on the surface opposite to n-
p (or p-p+) junction and minor charge carrier diffusion coefficient D [2, 7]:

 SL SL 
 D  1   1  d
d  
L L  e  d  D  e L  e  d  . (28)
Q(  , d, L, S, D)   e
d d 1   L   1  L  
 SL  L  SL   L     
1  e  1  e  
 D   D 

Thus

Q n (  )   e  α d n Q(  α , d n , L n , S n , D n ) , (29)

Q p ( )  e  α d n Q(  p ,d p ,L p ,S p ,D p ), (30)

 ( d n  d p )
2e (31)
Q p  ( )  dp dp
Q ( , d p  , L p  , S p  , D p  ).
 S L  Lp  S L   Lp
1  p p e  1  p p e
 Dp   Dp 
   

For surface recombination rate on the rear side of base layer, effective area value has to be used [2]:

S p Lp d p
 th
N p Dp Dp Lp , (32)
Sp 
N p Lp S p Lp d p
1 th
Dp Lp

where Np is dopant concentration in base p-layer, Np+ is that of rear p+-layer.

In this work, the following typical parameter values corresponding to modern efficient silicon PCs were used for
base PC in cascade:
dn = 1µ, Ln = 1µ, Sn = 105 cm/s, Dn = 10 cm2/s, for n-layer
dp = 300µ, Lp = 200µ, Sp = 0, Dp = 25cm2/s, for p-layer
dp+ = 0 (Qp+ = 0), for p+-layer.
988 Yuri D. Arbuzov et al. / Energy Procedia 119 (2017) 980–989
Yu.D. Arbuzov , V.M. Evdokimov, O.V. Shepovalova / Energy Procedia 00 (2017) 000–000 9

Angle-dependent photoresponse dependence for single PCs within upper-limit efficient cascade were considered
for cascade on the base of real silicon PC with N = 5, for wavelengths in visible range of radiation.
Photoresponse curves of single PCs near the short-wave limit of the visible radiation spectrum (wavelength 0 =
0.4µ corresponding to   0 = 1.995 1/µ) are shown in Fig. 5. Corresponding value of charge carrier collection
efficiency in base PC for selected typical parameter values equals to Q(0) = 0.600602.

0.2

0.18

0.16

0.14
Photoresponse

0.12
____S2; S3; S4; S5
0.1 SC=S1
0.08

0.06

0.04

0.02

0
0 10 20 30 40 50 60 70 80 90
Radiation incidence angle, degrees

Fig. 5. Dependence of photoresponse on radiation incidence angle close to the short wavelength boundary of the visible spectrum, 0 = 0.4 µ for
entire upper-limit efficiency PC comprising N =5 cascades based on real silicon PC and for single PCs within cascade Si (i =1 – 5).

Data show that, for the short wavelength range of visible light, the minimal value of photoresponse S1, for
upper-limit efficiency cascade PC, has that of the first, base, PC as well as for ideal cascade PC. Photoresponse of an
entire cascade PC equal to photoresponse S1, decreases more sharply with radiation incidence angle ξ than
theoretical photoresponse of ideal cascade PC Stheor(ξ) = cos ξ, while photoresponse Si(ξ) of single PCs for i =2 to 5
are almost equal to each other and have an angular dependence approximately close to theoretical photoresponse
Si(ξ) ~ Stheor(ξ) = cos ξ.
Photoresponse of single PCs for long-wavelength boundary of visible spectrum is shown in Fig. 6 where S. =
0.7744 µ ( = S = 0.125 µ–1) was taken as approximate boundary value. The corresponding value of charge carrier
collection efficiency for the base PC is equal to Q(S) = 0.925425. In fact, this value also corresponds to solar
spectrum wavelength that is most effective for photoelectric conversion with the use of silicon PC.
Our results show that, like in the previous cases, in visible radiation wavelength range, the minimal
photoresponse value for upper-limit efficiency cascade PCs corresponds to the first, base, PC and it is equal to S1.
Photoresponse of the entire cascade PC SC equal to S1 decreases with radiation incidence angle t at a considerably
higher rate compared to the theoretical photoresponse of ideal cascade PC, Stheor (ξ) = cos ξ. Nevertheless, these two
dependences are closer to each other than for shortwave radiation, while photoresponse values Si(ξ) for deposited
single PCs (i =2 to 5) are almost equal to each other and have approximately the same angular dependence as the
theoretical photoresponse, Si(ξ) ~ Stheor (ξ) = cos ξ.

6. Conclusion

Performed research makes it possible to determine characteristics of photocurrent for cascade photovoltaic
radiation converters including solar radiation converters in real conditions that, generally, correspond to variations
of radiation incidence angle in relation to the PC’s operation surface. Obtained results show that, for increasing
radiation incidence angle, spectral photoresponse of upper-limit efficiency PC comprising N  2 single PC cells on
the basis of monocrystalline base PC falls much sharper with incidence angle compared to that of base PC (N = 1)
 Yuri D. Arbuzov et al. / Energy Procedia 119 (2017) 980–989 989
Yu.D. Arbuzov , V.M. Evdokimov, O.V. Shepovalova / Energy Procedia 00 (2017) 000–000 10

yet it decreases slowly with N. Similarly to ideal cascade PC, as well as to real upper-limit efficiency cascade PC,
the minimal photoresponse value of single PCs corresponds to the first, base, PC and equals to S1.

0.2

0.18

0.16

0.14
Photoresponse

0.12
SC=S1 _____S2; S3; S4; S5
0.1

0.08

0.06

0.04

0.02

0
0 10 20 30 40 50 60 70 80 90

Radiation incidence angle, degrees

Fig. 6. Dependence of photoresponse on radiation incidence angle near the long-wavelength boundary of visible spectrum ( S = 0.7744 µ) for
entire upper-limit efficiency cascade PC SC based on real silicon PC and for single PCs of cascade PC, for Si (i =1 – 5).and N = 5.

Characteristic values of radiation incidence angle corresponding to the twofold drop in photoresponse compared
to normal incidence conditions decrease with single PCs numbers N in cascade PC and it grow with photosensitivity
of underlying PC cells. For cascade PC on the basis of modern efficient silicon PC comprising N = 5 single PCs,
these values are in the range of 44º to 58º, for visible radiation range i.e. they are significantly smaller than those for
ideal PC with only one single PC (60 º).
Obtained results have proved the need for implementation of tracking devices and their accuracy enhancing, in
the case of PV systems based on cascade PCs (which is not so much necessary in conventional PCs). This
requirement has to be especially complied with for operation of stationary oriented PCs in conditions of large
radiation incidence angles. At the same time, these results show the possibility to use simultaneously cascade PCs of
various types including high-voltage ones applying one and the same orientation method.

References

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