US5L10

Transistors

General purpose transistor

(isolated transistor and diode)
US5L10

A 2SD2674 and a RB461F are housed independently in a TUMT5 package.

zApplications zDimensions (Unit : mm)

DC / DC converter
Motor driver
2.0
1.3

0.2Max.
zFeatures
1) Tr : Low VCE(sat)
Di : Low VF
2) Small package

ROHM:TUMT5 Abbreviated symbol:L10

zStructure
Silicon epitaxial planar transistor
Schottky barrier diode

zEquivalent circuit

(5) (4)

Di2
Tr1

(1) (2) (3)

zPackaging specification s
Type US5L10
Package TUMT5
Marking L10
Code TR
Basic ordering unit(pieces) 3000

Rev.B 1/4
 US5L10
Transistors

zAbsolute maximum ratings (Ta=25°C)

Tr1
Parameter Symbol Limits Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 6 V
IC 1.5 A
Collector current ∗1
ICP 3 A
Power dissipation Pc 0.9 W/ELEMENT ∗2
Junction temperature Tj 150 °C
Range of storage temperature Tstg −40 to +125 °C
∗1 Single pulse, Pw=1ms.
∗2 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate

Di2
Parameter Symbol Limits Unit
Average rectified forward current IF 700 mA
Forward current surge peak (60HZ, 1∞) IFSM 3 A
Reverse voltage (DC) VR 20 V
Junction temperature Tj 125 °C
Range of storage temperature Tstg −40 to +125 °C
Peak reverse voltage VRM 25 V
Power dissipation PD 0.5 W/ELEMENT ∗
∗ Mounted on a 25mm×25mm× t 0.8mm ceramic substrate

Tr1& Di2
Parameter Symbol Limits Unit
0.4 W/TOTAL ∗1
Total power dissipation PD
1.0 W/TOTAL ∗2
∗1 Each terminal mounted on a recommended land
∗2 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate

zElectrical characteristics (Ta=25°C)

Tr1
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 15 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA
Collector cutoff current ICBO − − 100 nA VCB=15V
Emitter cutoff current IEBO − − 100 nA VEB=6V
Collector-emitter saturation voltage VCE(sat) − 85 200 mV IC/IB=500mA/25mA
DC current gain hFE 270 − 680 − VCE/IC=2V/200mA ∗
Transition frequency fT − 400 − MHz VCE=2V, IE=−200mA, f=100MHz ∗
Collector output capacitance Cob − 12 − pF VCB=10V, IE=0A, f=1MHz
∗ Pulsed

Di2
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF − 450 490 mV IF=700mA
Reverse current IR − − 200 µA VR=20V
Reverse recovery time trr − 9 − ns IF=IR=100mA, Irr=0.1IR

Rev.B 2/4
 US5L10
Transistors

zElectrical characteristic curves

Tr1
1000 10 1

COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)

=20/1
IC/IB=20

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

Ta=100°C Ta=25°C

BASE SATURATION VOLTAGE : VBE (sat) (V)

Ta=−40°C
Pulsed VCE=2V
Ta=25°C VBE(sat)
DC CURRENT GAIN : hFE

Ta=100°C
1
Ta=25°C 0.1
Ta=−40°C

Ta=100°C
100 0.1 Ta=25°C
Ta=−40°C
IC/IB=50/1
0.01
VCE(sat) IC/IB=20/1
0.01
IC/IB=10/1

VCE=2V
Pulsed
10 0.001 0.001
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain Fig.2 Collector-emitter saturation voltage Fig.3 Collector-emitter saturation voltage
vs. collector current base-emitter saturation voltage vs. collector current
vs. collector current

10 1000 1000
VCE=2V Ta=25°C
TRANSITION FREQUENCY : fT (MHz)

Pulsed VCE=2V
COLLECTOR CURRENT : IC (A)

f=100MHz
1
tstg
SWITCHING TIME : (ns)
100

Ta=100°C
Ta=25°C
0.1 100

10
Ta=−40°C tdon
0.01
tf
VCE=2V
Ta=25°C tr
Pulsed
0.001 10 1
0 0.5 1.0 1.5 −0.001 −0.01 −0.1 −1 −10 0.01 0.1 1 10
BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A)

Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time
characteristics vs. emitter current

100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

IE=0A
EMITTER INPUT CAPACITANCE : Cib (pF)

Cib f=1MHz
Ta=25°C

Cob

10

1
0.1 1 10 100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

Rev.B 3/4
 US5L10
Transistors
Di2
10 1000m

100m
FORWARD CURRENT : IF (A)

REVERSE CURRENT : IR (A)

1
Ta=125°C
10m
°C
100m 25
=1 1m
Ta
°C
25

100µ
=−

10m
°C

Ta

Ta=25°C
5
=2
Ta

10µ
1m
1µ Ta=−25°C

0.1m 0.1µ
0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 70
FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V)

Fig.9 Forward characteristics Fig.10 Reverse characteristics

Rev.B 4/4
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
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safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1