BC848 BC849 GENERAL PURPOSE TRANSISTORS BC850 ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS COMPLEMENTARY TYPES
BC846AZ1A BC848B1K BC846 BC856 BC846B1B BC848CZ1L BC847 BC857 E C BC847AZ1E BC849B2B BC848 BC858 BC847B1F BC849C2C BC849 BC859 B BC847C1GZ BC850B2FZ BC850 BC860 BC848A1JZ BC850C-Z2G SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT Collector-Base Voltage VCBO 80 50 30 30 50 V Collector-Emitter Voltage VCES 80 50 30 30 50 V Collector-Emitter Voltage VCEO 65 45 30 30 45 V Emitter-Base Voltage VEBO 6 5 V Continuous Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Base Current IBM 200 mA Peak Emitter Current IEM 200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Tj:Tstg -55 to +150 °C Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS. Collector Cut-Off Current ICBO Max 15 nA VCB = 30V Max 5 µA VCB = 30V Tamb=150°C Collector-Emitter VCE(sat) Typ 90 mV IC=10mA, Saturation Voltage Max. 250 mV IB=0.5mA Typ 200 mV IC=100mA, Max. 600 mV IB=5mA Typ 300 mV IC=10mA* Max. 600 mV Base-Emitter VBE(sat) Typ 700 mV IC=10mA, Saturation Voltage IB=0.5mA Typ 900 mV IC=100mA, IB=5mA Base-Emitter Voltage VBE Min 580 mV IC=2mA Typ 660 mV VCE=5V Max 700 mV Max 770 mV IC=10mA VCE=5V * Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC = 11mA, VCE = 1V at constant base current. BC846 BC847 BC846 BC847 BC848 BC849 BC848 BC849 BC850 BC850 ELECTRICAL CHARACTERISTICS (Continued) ELECTRICAL CHARACTERISTICS (Continued) PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS. PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS. Static Group VI hFE Min 75 75 75 IC=2mA, VCE=5V Dynamic Group VI hie Min 0.4 0.4 0.4 kΩ Forward Typ 110 110 110 Characteristics Typ 1.2 1.2 1.2 kΩ Current Ratio Max 150 150 150 Max 2.2 2.2 2.2 kΩ Group A Group A hFE Typ 90 90 90 IC=0.01mA, VCE=5V Min 1.6 1.6 1.6 kΩ Typ 2.7 2.7 2.7 kΩ Min 110 110 110 IC=2mA, VCE=5V Max 4.5 4.5 4.5 kΩ Typ 180 180 180 Group B Max 220 220 220 Min 3.2 kΩ Typ 4.5 kΩ Typ 120 120 120 IC=100mA, VCE=5V Group C Max 8.5 kΩ Group B hFE Typ 150 IC=0.01mA, VCE=5V Min 6 6 6 kΩ Typ 8.7 8.7 8.7 kΩ Min 200 IC=2mA, VCE=5V Max 15 15 15 Typ 290 kΩ Max 450 Group VI hre Typ 2.5 2.5 2.5 x10-4 Typ 200 200 200 IC=100mA, VCE=5V Group A Typ 1.5 1.5 1.5 x10-4 Group B Typ 2 2 2 2 2 x10-4 Group C hFE Typ. 270 270 270 270 IC=0.01mA, VCE=5V Group C Typ 3 3 3 x10-4 VCE=5V Ic=2mA Min 420 420 420 420 IC=2mA, VCE=5V Group VI hfe Min 75 75 75 Typ 500 500 500 500 Typ 110 110 110 Max 800 800 800 800 Max 150 150 150 Group A Typ 400 IC=100mA, VCE=5V Min 125 125 125 Typ 220 220 220 Transition Frequency fT Typ 300 MHz IC=10mA, VCE=5V Max 260 260 260 f=100MHz Group B Min 240 Collector-Base Cobo Typ 2.5 pF VCB=10V f=1MHz Typ 330 Capacitance Max 4.5 pF Group C Max 500 Emitter-Base Cib0 Typ 9 pF VEB=0.5V f=1MHz Min 450 450 450 450 Capacitance Typ 600 600 600 600 Noise Figure N Typ 2 2 2 1.2 1 dB VCE = 5V, IC=200µA, Max 900 900 900 900 Max 10 10 10 4 4 dB RG=2kΩ, f=1kHz, Group VI hoe Typ 20 20 20 µs ∆f=200Hz Max 40 40 40 µs Typ 1.2 1 dB VCE = 5V, IC=200µA, Max 4 3 dB RG=2kΩ, f=30Hz to Group A Typ 18 18 18 µs 15kHz at -3dB Max 30 30 30 µs points Group B Typ 30 µs Equivalent Noise en Max. 110 110 nV VCE = 5V, IC=200µA, Max 60 µs Voltage RG=2kΩ, f=10Hz to 50Hz at -3dB Group C Typ 60 60 60 µs points Max 110 110 110 µs
Spice parameter data is available upon request for this device
BC846 BC847 BC846 BC847 BC848 BC849 BC848 BC849 BC850 BC850 ELECTRICAL CHARACTERISTICS (Continued) ELECTRICAL CHARACTERISTICS (Continued) PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS. PARAMETER SYMBOL BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS. Static Group VI hFE Min 75 75 75 IC=2mA, VCE=5V Dynamic Group VI hie Min 0.4 0.4 0.4 kΩ Forward Typ 110 110 110 Characteristics Typ 1.2 1.2 1.2 kΩ Current Ratio Max 150 150 150 Max 2.2 2.2 2.2 kΩ Group A Group A hFE Typ 90 90 90 IC=0.01mA, VCE=5V Min 1.6 1.6 1.6 kΩ Typ 2.7 2.7 2.7 kΩ Min 110 110 110 IC=2mA, VCE=5V Max 4.5 4.5 4.5 kΩ Typ 180 180 180 Group B Max 220 220 220 Min 3.2 kΩ Typ 4.5 kΩ Typ 120 120 120 IC=100mA, VCE=5V Group C Max 8.5 kΩ Group B hFE Typ 150 IC=0.01mA, VCE=5V Min 6 6 6 kΩ Typ 8.7 8.7 8.7 kΩ Min 200 IC=2mA, VCE=5V Max 15 15 15 Typ 290 kΩ Max 450 Group VI hre Typ 2.5 2.5 2.5 x10-4 Typ 200 200 200 IC=100mA, VCE=5V Group A Typ 1.5 1.5 1.5 x10-4 Group B Typ 2 2 2 2 2 x10-4 Group C hFE Typ. 270 270 270 270 IC=0.01mA, VCE=5V Group C Typ 3 3 3 x10-4 VCE=5V Ic=2mA Min 420 420 420 420 IC=2mA, VCE=5V Group VI hfe Min 75 75 75 Typ 500 500 500 500 Typ 110 110 110 Max 800 800 800 800 Max 150 150 150 Group A Typ 400 IC=100mA, VCE=5V Min 125 125 125 Typ 220 220 220 Transition Frequency fT Typ 300 MHz IC=10mA, VCE=5V Max 260 260 260 f=100MHz Group B Min 240 Collector-Base Cobo Typ 2.5 pF VCB=10V f=1MHz Typ 330 Capacitance Max 4.5 pF Group C Max 500 Emitter-Base Cib0 Typ 9 pF VEB=0.5V f=1MHz Min 450 450 450 450 Capacitance Typ 600 600 600 600 Noise Figure N Typ 2 2 2 1.2 1 dB VCE = 5V, IC=200µA, Max 900 900 900 900 Max 10 10 10 4 4 dB RG=2kΩ, f=1kHz, Group VI hoe Typ 20 20 20 µs ∆f=200Hz Max 40 40 40 µs Typ 1.2 1 dB VCE = 5V, IC=200µA, Max 4 3 dB RG=2kΩ, f=30Hz to Group A Typ 18 18 18 µs 15kHz at -3dB Max 30 30 30 µs points Group B Typ 30 µs Equivalent Noise en Max. 110 110 nV VCE = 5V, IC=200µA, Max 60 µs Voltage RG=2kΩ, f=10Hz to 50Hz at -3dB Group C Typ 60 60 60 µs points Max 110 110 110 µs
Spice parameter data is available upon request for this device