BC817K.../BC818K...

NPN Silicon AF Transistor

• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101

Type Marking Pin Configuration Package

BC817K-16 6As 1=B 2=E 3=C - - - SOT23
BC817K-16W 6As 1=B 2=E 3=C - - - SOT323
BC817K-25 6Bs 1=B 2=E 3=C - - - SOT23
BC817K-25W 6Bs 1=B 2=E 3=C - - - SOT323
BC817K-40 6Cs 1=B 2=E 3=C - - - SOT23
BC817K-40W 6Cs 1=B 2=E 3=C - - - SOT323
BC818K-16W 6Es 1=B 2=E 3=C - - - SOT323
BC818K-40 6Gs 1=B 2=E 3=C - - - SOT23

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 BC817K.../BC818K...

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO V
BC817... 45
BC818... 25
Collector-base voltage VCBO
BC817... 50
BC818... 30
Emitter-base voltage VEBO 5
Collector current IC 500 mA
Peak collector current ICM 1000
Base current IB 100
Peak base current IBM 200
Total power dissipation- Ptot mW
TS ≤ 115 °C, BC817K, BC818K 500
TS ≤ 130 °C, BC817KW, BC818KW 250
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS K/W
BC817K, BC818K ≤ 70
BC817KW, BC818KW ≤ 80
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)

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 BC817K.../BC818K...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V
IC = 10 mA, IB = 0 , BC817... 45 - -
IC = 10 mA, IB = 0 , BC818... 25 - -
Collector-base breakdown voltage V(BR)CBO -
IC = 10 µA, IE = 0 , BC817... 50 - -
IC = 10 µA, IE = 0 , BC818... 30 - -
Emitter-base breakdown voltage V(BR)EBO 5 - - V
IE = 10 µA, IC = 0
Collector-base cutoff current ICBO µA
VCB = 25 V, IE = 0 - - 0.1
VCB = 25 V, IE = 0 , TA = 150 °C - - 50
Emitter-base cutoff current IEBO - - 100 nA
VEB = 4 V, IC = 0
DC current gain1) hFE -
IC = 100 mA, VCE = 1 V, hFE -grp.16 100 160 250
IC = 100 mA, VCE = 1 V, hFE -grp.25 160 250 400
IC = 100 mA, VCE = 1 V, hFE -grp.40 250 350 630
IC = 500 mA, VCE = 1 V, all hFE-grps. 40 - -
Collector-emitter saturation voltage1) VCEsat - - 0.7 V
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage1) VBEsat - - 1.2
IC = 500 mA, IB = 50 mA
1Pulse test: t < 300µs; D < 2%

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Electrical Characteristics at T A = 25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency fT - 170 - MHz
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance Ccb - 3 - pF
VCB = 10 V, f = 1 MHz
Emitter-base capacitance Ceb - 40 -
VEB = 0.5 V, f = 1 MHz

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DC current gain hFE = ƒ(IC) DC current gain hFE = ƒ(IC)

VCE = 1 V VCE = 1 V
hFE-grp.16 hFE-grp.25
3
10 10 3
hFE

hFE
10 2 10 2

105 °C
85 °C
65 °C
105 °C 25 °C
85 °C -40 °C
65 °C
25 °C
-40 °C
10 1 -5 -4 -3 -2 -1 0
10 1 -5 -4 -3 -2 -1 0
10 10 10 10 10 A 10 10 10 10 10 10 A 10
IC IC

DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage

VCE = 1 V IC = ƒ(VCEsat ), hFE = 10
hFE-grp.40
10 3 BC 817/818 EHP00223
10 3
mA
ΙC
150 ˚C
25 ˚C
10 2 -50 ˚C

5
hFE

10 2 10 1
105 °C 5
85 °C
65 °C
25 °C
-40 °C 10 0
5

10 1 -5 -4 -3 -2 -1 0 10 -1
10 10 10 10 10 A 10 0 0.2 0.4 0.6 V 0.8
IC VCEsat

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 BC817K.../BC818K...

Base-emitter saturation voltage Collector cutoff current ICBO = ƒ(TA)

IC = ƒ(VBEsat), hFE = 10 VCBO = 25 V

BC 817/818 EHP00222 BC 817/818 EHP00221

10 3 10 5
mA nA
ΙC 150 ˚C Ι CBO
25 ˚C
-50 ˚C 10 4
10 2
5
max
10 3

10 1
5 typ
10 2

10 0
5 10 1

10 -1 10 0
0 1.0 2.0 3.0 V 4.0 0 50 100 ˚C 150
V BEsat TA

Transition frequency fT = ƒ(IC) Collector-base capacitance Ccb = ƒ(VCB)

VCE = parameter in V, f = 2 GHz Emitter-base capacitance Ceb = ƒ(VEB)
BC817K, BC818K
BC 817/818 EHP00218 55
10 3
pF
MHz
fT
5
45

40 CEB
CCB/CEB

35

30
10 2
25

5 20

15

10 CCB

5
1
10 0
10 0 10 1 10 2 mA 10 3 0 2 4 6 8 10 12 14 16 V 20
ΙC VCB/VEB

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Total power dissipation P tot = ƒ(TS) Total power dissipation P tot = ƒ(TS)
BC817K, BC818K BC817KW, BC818KW

550 550
mW

450 450

400 400

Ptot
350 350

300 300

250 250

200 200

150 150

100 100

50 50

0 0
0 15 30 45 60 75 90 105 120 150 0 15 30 45 60 75 90 105 120 °C 150
TS

Permissible Pulse Load RthJS = ƒ(tp) Permissible Pulse Load

BC817K, BC818K Ptotmax/PtotDC = ƒ(tp )
BC817K, BC818K
10 2 10 3

-
Ptotmax/PtotDC
RthJS

10 1 10 2
D=0
0.005
0.01
D = 0,5 0.02
0,2 0.05
0,1 0.1
0,05 0.2
10 0 0,02 10 1 0.5
0,01
0,005
0

10 -1 -6 -5 -4 -3 -2 0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
TP TP

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Permissible Puls Load RthJS = ƒ (t p) Permissible Pulse Load

BC817KW, BC818KW Ptotmax/PtotDC = ƒ(tp )
BC817KW, BC818KW
10 3 10 3

K/W
-

Ptotmax/PtotDC
10 2
D=0
RthJS

10 2 0.005
0.01
0.02
10 1
0.05
0.5 0.1
0.2 0.2
0.1 0.5
0.05 10 1
0.02
10 0
0.01
0.005
D=0

10 -1 -6 -5 -4 -3 -2 0
10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10 10 10 10 10 10 s 10
tp tp

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 Package SOT23 BC817K.../BC818K...

Package Outline

0.15 MIN.
1 ±0.1
2.9 ±0.1 0.1 MAX.
B
3

2.4 ±0.15

1.3 ±0.1
10˚ MAX.

10˚ MAX.
1 2
1)
0.4 +0.1
-0.05 0.08...0.1 A
C 5
0.95
0...8˚
1.9

0.25 M B C 0.2 M A

1) Lead width can be 0.6 max. in dambar area

Foot Print

0.8
0.9
1.3
0.9

0.8 1.2

Marking Layout (Example)

Manufacturer

EH s 2005, June
Date code (YM)

Pin 1 BCW66
Type code

Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel

4
0.9 0.2
2.13
2.65
8

Pin 1 3.15 1.15

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 Package SOT323 BC817K.../BC818K...

Package Outline
2 ±0.2 0.9 ±0.1
0.1 MAX.
0.3 +0.1
-0.05
3x
0.1 M 0.1
A
3

1.25 ±0.1
2.1 ±0.1

0.1 MIN.
1 2
0.65 0.65 0.15 +0.1
-0.05

0.2 M A

Foot Print

0.6
1.6
0.8

0.65
0.65

Marking Layout (Example)

Manufacturer

2005, June
Date code (YM)

Pin 1 BCR108W
Type code

Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel

4 0.2
8
2.3

Pin 1 2.15 1.1

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 BC817K.../BC818K...

Edition 2009-11-16

Published by
Infineon Technologies AG
81726 Munich, Germany

 2009 Infineon Technologies AG

All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.

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