SEMICONDUCTOR

2N3904U
TECHNICAL DATA

General Purpose Transistor

• We declare that the material of product compliance with RoHS requirements.

ORDERING INFORMATION
3
Device Marking Shipping

2N3904U AM 3000/Tape & Reel

1
2
SC-70 / SOT– 323

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO 40 Vdc 3
COLLECTOR
Collector–Base Voltage VCBO 60 Vdc

Emitter–Base Voltage VEBO 6.0 Vdc 1

BASE
Collector Current — Continuous IC 200 mAdc
2
EMITTER

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
PD 150 mW
TA = 25 C

Thermal Resistance, Junction to Ambient R θJA 833 C/W

Junction and Storage Temperature T J , Tstg –55 to +150 C

ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted.)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(2) V(BR)CEO - Vdc

40
(I C = 1.0 mAdc)
Collector–Base Breakdown Voltage
V(BR)CBO 60 - Vdc
(I C = 10 µAdc)
Emitter–Base Breakdown Voltage V(BR)EBO 6.0 - Vdc
(I E = 10 µAdc)
Base Cutoff Current
IBL - 50 nAdc
( V CE = 30 Vdc, V EB = 3.0 Vdc, )
Collector Cutoff Current
ICEX - 50 nAdc
( V CE = 30Vdc, V BE = 3.0Vdc )

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

2007. 12. 18 Revision No : 0 1/7

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ELECTRICAL CHARACTERISTICS ( TA 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
ON CHARACTERISTICS (3)
DC Current Gain hFE –
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 –
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 –
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 –
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 –
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) – 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) – 0.3
Base–Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) – 0.95
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
fT 300 – MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
Cobo – 4.0 pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
Cibo – 8.0 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
hie 1.0 10 kΩ
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
hre 0.5 8.0 X 10-4
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
hfe 100 400 –
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
hoe 1.0 40 μmhos
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
NF – 5.0 dB
(VCE = 5.0Vdc, IC = 100 μAdc, RS = 1.0 k Ω, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = –0.5 Vdc td – 35
ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr – 35
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc ts – 200
ns
Fall Time IB1 = IB2 = 1.0 mAdc) tf – 50

3. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%.

2007. 12. 18 Revision No : 0 2/7

 2N3904U

+3 V 10 < t 1 < 500 µs +3 V

t1
DUTY CYCLE = 2%
DUTY CYCLE = 2% +10 9 V
300 ns 275 275
+10 9 V

10 k 10 k
0
–0 5 V
C S < 4 pF* C S < 4 pF*
1N916
< 1 ns
–9 1
< 1 ns
* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

T J = 25°C
T J = 125°C
10 5000

3000
V CC = 40 V
70
2000
I C /I B = 10
50
CAPACITANCE (pF)

1000
Q, CHARGE (pC)

700
C ibo
30 500
Q T

20 300
C obo
200
QA
100
70
10 50
01 02 03 0507 10 20 30 5 0 7 0 10 20 30 40 10 20 30 5 0 7 0 10 20 30 50 70 100 200

REVERSE BIAS VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

2007. 12. 18 Revision No : 0 3/7

 2N3904U

500 500
I C /I B = 10 VCC = 40 V
300 300
200 I C /I B = 10
200

100 100
70 70
t r @ VCC = 3.0 V

t r , RISE TIME (ns)

50 50
TIME (ns)

30 30
40 V
20 20
15 V
10 10
7 2.0 V
t d @ VOB = 0 V 7
5 5
10 20 30 5 0 7 0 10 20 30 50 70 100 200 10 20 30 5 0 7 0 10 20 30 50 70 100 200

I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time Figure 6. Rise Time
500 500
t ’s = t s –1 /8 t f VCC = 40 V
300 300
I C /I B =20 I C /I B =10 I B1 = I B2 I B1 = I B2
200 200
I C /I B = 20
t ’s , STORAGE TIME (ns)

100 100
70 70
t f , , FALL TIME (ns)

50 I C /I B =20 50

30 I C /I B =10 30 I C /I B = 10
20 20

10 10
7 7
5 5
10 20 30 5 0 7 0 10 20 30 50 70 100 200 10 20 30 5 0 7 0 10 20 30 50 70 100 200

I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

12 14
SOURCE RESISTANCE=200 Ω f = 1.0 kHz
I C = 1.0 mA
12
10 I C = 1.0 mA

10 I C = 0.5 mA
SOURCE RESISTANCE =200 Ω
NF, NOISE FIGURE (dB)

8
NF, NOISE FIGURE (dB)

I C = 0.5 mA I C = 50 µA
8
6 SOURCE RESISTANCE =1.0k I C = 100 µA
6
I C = 50 µA
4
4

2
SOURCE RESISTANCE=500 Ω 2
I C = 100 µA
0 0
01 02 04 10 20 40 10 20 40 100 01 02 04 10 20 40 10 20 40 100

f, FREQUENCY (kHz) R S , SOURCE RESISTANCE (kΩ)

Figure 9. Figure 10.

2007. 12. 18 Revision No : 0 4/7

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h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, T A = 25°C)

hoe , OUTPUT ADMITTANCE ( μmhos)

300 100

50

200
20

10
100
h fe, CURRENT

70 5

50
2

30 1
01 02 03 05 10 20 30 50 10 01 02 03 05 10 20 30 50 10

I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA)

hre , VOLTAGE FEEDBACK RATIO (X 10 −4 )

Figure 11. Current Gain Figure 12. Output Admittance

20 10
h ie , INPUT IMPEDANCE (k Ω)

10 70

50
50

30

20
20

10

05 10

07

02 05
01 02 03 05 10 20 30 50 10 01 02 03 05 10 20 30 50 10

I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA)

Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS

h FE , DC CURRENT GAIN (NORMALIZED)

20
TJ = +125°C V CE = 1.0 V
10
+25°C
07

05 –55°C

03

02

01
01 02 03 05 07 10 20 30 50 70 10 20 30 50 70 100 200

I C , COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

2007. 12. 18 Revision No : 0 5/7

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VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)

10

T J = 25°C
08
I C = 1.0 mA 10 mA 30 mA 100 mA

06

04

02

0
0 01 0 02 0 03 0 05 0 07 01 02 03 05 07 10 20 30 50 70 10

I B , BASE CURRENT (mA)

Figure 16. Collector Saturation Region

12 10
T J = 25°C
10 V BE(sat) @ I C /I B =10 05 +25°C TO +125°C
θ VC FOR V CE(sat)
08 0
–55°C TO +25°C
COEFFICIENT(mV/ C)
V, VOLTAGE (VOLTS)

V BE @ V CE =1.0 V
06 –0 5

+25°C TO +125°C
04 –1 0
V CE(sat) @ I C /I B =10 –55°C TO +25°C
02 –1 5 θ VB FOR V BE(sat)

0 –2 0
10 20 30 50 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200

I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages Figure 18. Temperature Coefficients

2007. 12. 18 Revision No : 0 6/7

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SC-70 / SOT-323

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

A INCHES MILLIMETERS
DIM
L MIN MA X MIN MA X
A 0.071 0.087 1.80 2.20
3 B 0.045 0.053 1.15 1.35
S B C 0.032 0.040 0.80 1.00
1 2
D 0.012 0.016 0.30 0.40
G 0.047 0.055 1.20 1.40
H 0.000 0.004 0.00 0.10
D J 0.004 0.010 0.10 0.25
G K 0.017 REF 0.425 REF
L 0.026 BSC 0.650 BSC
N 0.028 REF 0.700 REF
C N J
S 0.079 0.095 2.00 2.40

0.05 (0.002) K
H

0.025
0.025 0.65
0.65

0 075
1.9
0 035
09

0.028
inches
0.7
mm

2007. 12. 18 Revision No : 0 7/7