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BAS16
Connection Diagram
3 3
3
A6
2
1 2
1 1 2NC
SOT-23
Thermal Characteristics
Symbol Parameter Value Units
PD Power Dissipation 350 mW
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Typical Characteristics
250
140
200
150
130
100
120 50
0
10 20 30 50 70 100
R
Figure 1. Reverse Voltage vs Reverse Current Figure 2. Reverse Current vs Reverse Voltage
BV - 1.0 to 100 uA IR - 10 to 100 V
485 725
Ta= 25°C Ta= 25°C
Forward Voltage, VF [mV]
450 700
Forward Voltage, VF [mV]
400 650
600
350
550
300
500
250
F
225 450
1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10
F Forward Current, IF [uA] Forward Current, IF [mA]
Figure 3. Forward Voltage vs Forward Current Figure 4. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA VF - 0.1 to 10 mA
1.5
Ta= 25°C 1.3
1.4 Ta= 25 °C
Total Capacitance, C T [pF]
Forward Voltage, VF [V]
1.2
1.2
1.1
0.8
F
0.6 1
10 20 30 50 100 200 300 500 0 2 4 6 8 10 12 14 15
Forward Current, IF [mA] Reverse Voltage [V]
Figure 5. Forward Voltage vs Forward Current Figure 6. Total Capacitance
VF - 10 - 800 mA
BAS16, Rev. C
BAS16
Small Signal Diode
(continued)
4
Ta= 25°C
500
400 IR
3.5 -F
OR
WA
C u rre n t [m A ]
3 400 R D
300 CU
R RE
2.5 300 NT
ST
IF EA
200 (A V - A Y D
2 Io - A V E R A
)
ST
200 VERA G E AT
GE R R E C E
ECTIF T I F -m
1.5 IE D CIE D
100 URR CU A
E NTR E
R
100 - mNAT
- mA
1
10 20 30 40 50 60
D
Reverse Current [mA] 0
0
0
0 50
50 100
100 150
150
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms o o
A Ambient Temperature, TA [ C]
Figure 7. Reverse Recovery Time Figure 8. Average Rectified Current (IF(AV))
vs Reverse Current versus Ambient Temperature (T A)
TRR - IR 10 mA vs 60 mA
500
Power Dissipation, P D [mW]
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0 50 100 150 200
Average Temperature, IO ( oC)
BAS16, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER UltraFET
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. H4
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