LAP 3

TP1 Bipolar junction transistor (BJT)

NAI SOKNOV
E20170539

LECTURED BY:
CHHORN SOPHEAKTRA

ENGINEERING’S DEGREE
DEPARTMENT OF ELECTRONIC AND ENERGY ENGINEERING
INSTITUTE OF TECHNOLOGY OF CAMBODIA
PHNOM PENH
2020-2021
 TP1: Bipolar junction transistor (BJT)

1. Introduction
Bipolar junction transistor (BJT) is a type of transistor. It is the semiconductor solid state
current-controlled device that is used as electronically switch in the circuit.
2. Objective
After completed this practicing, we will understand the operation of the BJT and the mode
in the BJT.
3. Experiment circuit

Figure 1 NPN transistor in switch mode

4. Procedure
 Using DC-sweep analysis on VBB to identify the cutoff, active and saturation region
of transistor. Note, the potential at the boundary of each region, is the importance value
to operate the transistor as a switch
 Define the power dissipation of each component in above circuit

Figure 2 IRload vs VBB

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As shown in figure 2 cutoff mode can be operated when VBB less than around 0.7V.
Because when VBB<0.7 there is no current across the resistor Rload that mean there is
no current flow from collector to emitter.

Figure 3 VCE vs VBB

In the figure 3 is the characteristic of the VCE versus VBB. It shows that VBB reach
around 4.5V VCE tend to be zero. So when VBB>4.5V transistor operate saturation
mode and 0.7V<VBB<4.5V transistor operate active mode.

Figure 4 P(Rload) vs VBB

In the figure 4 is shown the power dissipation of resistor Rload vs VBB. As shown in
the figure the power dissipation of Rload become maximum in the saturation mode.

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 Figure 5 P(RB) vs VBB

In figure 5 show the power dissipation of resistor RB vs voltage VBB. The power of
RB is very small because current across its self is very small.

 Answer the questions

1. VBB to operate switch mode
 Fully on or saturation mode VBB>4.5V
 Fully off or cutoff mode VBB<0.7V
2. When BJT is used as a switch, active regime cannot be used. Because active is
somewhere between saturation mode and cutoff mode. Active mode allows current
to flow from collector to emitter so BJT always on. Moreover, in the active mode
the power dissipation of the BJT is very high, as shown in the figure 6.

Figure 6 Power of the transistor VS VBB

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 3. The value which is important to control the BJT is base current IB not base voltage
VBB. Because when the resistor RB is change to 10k then the state of the BJT also
change. As show above BJT reach saturation mode at VBB around 4.5V but this
time BJT reach saturation mode at VBB around 36V, as shown in figure 7. So in
order to maintain base current that make BJT reach saturation mode when base
resistor is increased the base voltage also need to be increased.

Figure 7 VCE vs VBB

4. The power rating of 𝑅𝑙𝑜𝑎𝑑 must be greater than 𝐼𝑐2 × 𝑅𝑙𝑜𝑎𝑑 where 𝐼𝑐 is current at the
saturation point, and the same thing power rating of 𝑅𝐵 must bigger than 𝐼𝐵2 × 𝑅𝐵
𝐼𝐵 is the current at the saturation mode.

5. Practice
Redesign the above circuit if we want the transistor to work in switch mode within the
range voltage of 0-3.3V, when the RLoad = 10 ohm

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 Figure 8 base current IB and VCE VS VBB

As shown in the figure 8 BJT reach saturation mode at base current around 4mA when base
voltage at the range 0 to 5V and base resistor 1k. then to be able to use switch mode when
3.3−0.7
base voltage at the range 0 to 3.3V then base resistor must be in rage 0 to = 650Ω.
4×10−3
And according to figure 10 power rating of base resistor must greater 10mW

Figure 9 revalue RB to 650 ohm

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 Figure 10 base resistor power vs VBB

6. Conclusion
Bipolar junction has 3 state, cutoff state, active state, and saturation state. When BJT is
used as a switch only cutoff state and saturation sate is used. And base current is what
control the state of the BJT, so if base resistor has been changed then base voltage also
must be changed to remain the current at the saturation mode.