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TOSHIBA 25)103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 283103 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND Unit in mm IMPEDANCE CONVERTER APPLICATIONS @ High Breakdown Voltage : Vgpg=50V © High Input Impedance: Iggg=1.0nA (Max.) (Vqg=30V) os smay | 258 ¢ Low Rps (ON) #Rps(ON)=2702 (Typ.) (pss= © Complimentary to 2SK246 MAXIMUM RATINGS (Ta =25°C) 735) 2 CHARACTERISTIC SYMBOL | RATING | UNIT Gate-Drain Voltage Ven: 50 v y Suece Gate Current Ig =10 | ma 3. DRAIN Drain Power Dissipation Pp 300 | mw_||JEDEC ‘70-92 Junction Temperature T; 125 sc_|[EIAy SC-43 Storage Temperature Range Tote —55~125 | °C [rosa _2-5F1C Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAx.|UNIT| Gate Cut-off Current Tess _| Vas=30V, Vpg=0 — [= | t0T na Gate-Drain Breakdown Voltage |V (BR) GDS|_Vps=0, 1G=100A sof — [— |v i Ipss = = -12| — |- Drain Current (Now) | YDS=-10V, Vos=0 12 14| mA Gate-Source Cut-off Voltage [Vas (orF| Vps=—10V, Ip=—0.1A, oa| — | 60] v Forward Transfer Admittance | |Yfsl 10] 40| — | ms Drain-Source ON Resistance | Rpg (ON) — | 20] —] 2 Input Capacitance Cis — | 18] — [or Reverse Transfer Capacitance | Crss__| VpG=~10V, Ip: — | 36] — [or Note : Ipgg Classification Y:—-1.2~-8.0mA, GR:-2.6~-6.5mA, BL: —6~—14mA T 2001-05-31 TOSHIBA 25)103 Ip = Vos Ip = Vps_ (LOW VOLTAGE REGION) sa] corn sovnce councox source go] mere a os 2 2 Yos=0 10 5 5 i i 25 20 f Zz

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