Ordering number:EN 199)___| 2SB544/2SD400 [Ey ‘PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amp, Electronic Governor Applications (): 288544 Absolute Maximum Ratings at Ta = 25° unit Collector to Base Voltage Yeo (-)25 Collector to Emitter Voltage Voro (-25 OV Emitter to Base Voltage VeBo oe, Collector Current Ic (A Collector Current(Pulse) Icp (2 A Collector Dissipation Po 900 mW dunetion Temperature 7 160°C Storage Temperature Tstg -55t0+150 °C Electrical Characteristics at Ta=25°C min typ max. unit Collector Cutoff Current Icgo Vop=(—)20V,1e=0 C0 pA Emitter Cutoff Current Igno Vep=(—)4V,Ic=0 (Lo BA DC Current Gain bre) Vog=(~)2V,Jo=(—)50mA. 60% 560% bre(2) —)1A 30 Gain-Bandwidth Product fp Vex=(—)10V,Ig=(—)50mA, 180 MHz Output Capacitance ob Von=(—)10V,f=1MHz (25) oF 15 C-E Saturation Voltage —Vorisat) —Io=(—)500mA,Ip=(—)50mA (-0.15) (-07) V 01 03 BLE Saturation Voltage Vprisay — Io=(—)500mA,Iy=(—)50mA (00.85 (12 C-BBreakdown Voltage Viprcro Io=(—)10pA,Tg=0 C-E Breakdown Voltage Vipriceo le=(—)1mA,Rps=” E-BBreakdown Voltage Viereso Ie=(—)10pAdL <<<< ¥ + The 29B544/2SD400 are classified by 50mA hye as follows: 60D 120 | 100 E 200 | 160 F 320 | 280 G 560 Case Outline 2006A (unit: mm) 20, BIAS: SC-51 Bs Bas ‘SANYOURP Cr Collector Es Enitter Spocifications and information herein are subject to change without notice. onductor Business Headquarters eee AORN! 4280MO/S157AT/DIT4MW,TS No.199-1/3 MM 7997076 OO1S716 245 Ml 2532SB544/2SD400 ne Te = Vor = Te = vee ‘298544 | ges = Jas wT 280400 “Gent ome t— Smt. <-04 os t 1 == i I Toei Fd : Fas | i = ; S| 3 T 3 anal 04 t atm. Soa u J r ge S olf | So2 Pe 4 7 T eo ° ee pti = 3 Collector o Emitter VoliageVex = V Collector to Emiter Voltage.Vgg ~ V Sy Io = Vee ite Ic = Vee Habe Fs arate val vene < [ 7 > il | | a a2 see hese 2 as 7 — —— se fame [1 33 [ ¥ 1 | 2 i | 5 1a? T3379 2S STF Collector Currenule = A Pe = Ta y a ‘En 4 ES Sie l “| 1 < 10h QIN { gt t z Le | 5 N é 4 . 3 al Stre=250 ——T Single pulse [For PNP, mins sign inomitted so 2 3 sw 2 33 Collector to Emitter Voltage,Ver ~ V Mi 7997076 0015718 Tl) a Ambient Temporats 255CASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS typical values. @No marking is indicated @All of Sanyo lead formed small signal transistor case outlines are illustrated below. @ All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by Case Outline 2003A/2003B (unit : mm) 20 okt Case Outline 2019A/2019B (unit : mm) 20 ou. 5 tr 11 en i Kato F) a ad E+ 44 it 4 os | c Pe. OG er | mo “ JEDEC :TO-92 1:Source JEDRC :TOs2 1: Bmittr BIAS. :80-43—2:Cale eek ene tions coe zn hole ae seen oe Case Outline 2004A (unit: mm) Case Outline 2033 (unit : mm) 2.0 one re 15.0: ca 0.45 7 woe cB) rr i ac vi = | s < JEDEC :T0-92 1: Base 2: Collector RIAD SC-43 2: Emitter 3: Base Bvoae? | PEM. a Case Outline 2005A (unit : mm) Case Outline 2034/2034A (unit : mm) (oss F i. 4 n Te ct bl) Z 1S 2 lp ous le ‘| Doteges eee rte es en JEDEC :TO-92, in : Rennes Boo aio pe, Case Outline 2006A (unit : mm) Case Outline 2040 (unit : mm) : 30, ir aa 144 as 0. 1:Drain BIAJ _ :SC-61 1: Bmitter 2: Source SANYO :MP 2: Collector 3: Gate 3 SANYO:SPA 16 Mm 7997076 0015489 525Case Outline 2061 (unit : mm) ED ae wl Lee 2 Case Outline 20844 (unit: @™ 7997076 0015490 240 17